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1. 发明申请

US20150188290A1 INTERBAND CASCADE LASERS WITH ENGINEERED CARRIER DENSITIES 有权
标题翻译： INTERBAND CASCADE激光与工程承运人密度
公开(公告)号：US20150188290A1
公开(公告)日：2015-07-02
申请号：US14308768
申请日：2014-06-19
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , Chul Soo Kim , Mijin Kim , Charles D. Merritt
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , Chul Soo Kim , Mijin Kim , Charles D. Merritt
IPC分类号： H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313
摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.
摘要翻译：提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值电流密度Jth需要实现激光。对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。

2. 发明授权

US08879593B2 Epitaxial-side-down mounted high-power semiconductor lasers 有权
标题翻译：外延侧面安装的大功率半导体激光器
公开(公告)号：US08879593B2
公开(公告)日：2014-11-04
申请号：US13802887
申请日：2013-03-14
申请人： Chul Soo Kim , William W. Bewley , Mijin Kim , Charles D. Merritt , Chadwick Lawrence Canedy , Joshua Abell , Igor Vurgaftman , Jerry R. Meyer
发明人： Chul Soo Kim , William W. Bewley , Mijin Kim , Charles D. Merritt , Chadwick Lawrence Canedy , Joshua Abell , Igor Vurgaftman , Jerry R. Meyer
IPC分类号： H01S3/04 , H01S5/024 , H01S5/022 , H01S5/00 , H01S5/183 , H01S5/22
CPC分类号： H01S5/024 , H01S5/005 , H01S5/022 , H01S5/0224 , H01S5/02248 , H01S5/02268 , H01S5/02272 , H01S5/02469 , H01S5/183 , H01S5/22 , H01S2301/176
摘要： A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder.
摘要翻译：一种激光装置，其配置为在散热器上外延安装。激光装置包括半导体激光器结构和在基板上的至少一个柱，其中激光器结构和柱通过通道彼此分离。激光结构和柱可选地涂覆有热扩散材料层，并且构造成使得柱的最大高度与激光结构的最大高度大致相同。当使用施加到激光结构的顶部的焊料和至少一个柱将激光装置以外延形式安装到散热器时，至少一个支柱和激光结构之间的通道提供一个释放流动路径用于焊料，并确保激光器结构不会直接与焊料接触。

3. 发明授权

US09059570B1 Interband cascade lasers with engineered carrier densities 有权
标题翻译：具有工程载波密度的带间级联激光器
公开(公告)号：US09059570B1
公开(公告)日：2015-06-16
申请号：US14308768
申请日：2014-06-19
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , Chul Soo Kim , Mijin Kim , Charles D. Merritt
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , Chul Soo Kim , Mijin Kim , Charles D. Merritt
IPC分类号： H01S5/34 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313
摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.
摘要翻译：提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值电流密度Jth需要实现激光。对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。

4. 发明申请

US20130243020A1 Epitaxial-Side-Down Mounted High-Power Semiconductor Lasers 有权
标题翻译：外延侧面安装的大功率半导体激光器
公开(公告)号：US20130243020A1
公开(公告)日：2013-09-19
申请号：US13802887
申请日：2013-03-14
申请人： Chul Soo Kim , William W. Bewley , Mijin Kim , Charles D. Merritt , Chadwick Lawrence Canedy , Joshua Abell , Igor Vurgaftman , Jerry R. Meyer
发明人： Chul Soo Kim , William W. Bewley , Mijin Kim , Charles D. Merritt , Chadwick Lawrence Canedy , Joshua Abell , Igor Vurgaftman , Jerry R. Meyer
IPC分类号： H01S5/024 , H01S5/022
CPC分类号： H01S5/024 , H01S5/005 , H01S5/022 , H01S5/0224 , H01S5/02248 , H01S5/02268 , H01S5/02272 , H01S5/02469 , H01S5/183 , H01S5/22 , H01S2301/176
摘要： A laser apparatus configured for epitaxial-side-down mounting on a heat sink. The laser apparatus includes a semiconductor laser structure and at least one post on a substrate where the laser structure and post are separated from each other by a channel. The laser structure and the posts optionally are coated with a heat-spreading material layer and are configured so that the maximum height of the posts is about the same as the maximum height of the laser structure. When the laser apparatus is mounted to a heat sink in an epi-down configuration using solder applied to the top of the laser structure and the at least one post, the channels between the at least one post and the laser structure provide a relief flow path for the solder and ensure that the laser structure does not come directly into contact with the solder.
摘要翻译：一种激光装置，其配置为在散热器上外延安装。激光装置包括半导体激光器结构和在基板上的至少一个柱，其中激光器结构和柱通过通道彼此分离。激光结构和柱可选地涂覆有热扩散材料层，并且构造成使得柱的最大高度与激光结构的最大高度大致相同。当使用施加到激光结构的顶部的焊料和至少一个柱将激光装置以外延形式安装到散热器时，至少一个支柱和激光结构之间的通道提供一个释放流动路径用于焊料，并确保激光器结构不会直接与焊料接触。

5. 发明授权

US08493654B2 High-temperature interband cascade lasers 有权
标题翻译：高温带间级联激光器
公开(公告)号：US08493654B2
公开(公告)日：2013-07-23
申请号：US13353770
申请日：2012-01-19
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , James R. Lindle , Chul-soo Kim , Mijin Kim
IPC分类号： H01S5/30
CPC分类号： B82Y20/00 , H01S5/3077 , H01S5/3401 , H01S5/3407 , H01S5/3416 , H01S5/3422 , H01S5/34306
摘要： An interband cascade gain medium is provided. The gain medium can include at least one thick separate confinement layer comprising Ga(InAlAs)Sb between the active gain region and the cladding and can further include an electron injector region having a reduced thickness, a hole injector region comprising two hole quantum wells having a total thickness greater than about 100 Å, an active gain quantum well region separated from the adjacent hole injector region by an electron barrier having a thickness sufficient to lower a square of a wavefunction overlap between a zone-center active electron quantum well and injector hole states, and a thick AlSb barrier separating the electron and hole injectors of at least one stage of the active region.
摘要翻译：提供了一个带间级联增益介质。所述增益介质可以包括至少一个厚的单独约束层，其包括在所述有源增益区域和所述包层之间的Ga（InAlAs）Sb，并且还可以包括具有减小的厚度的电子注入器区域，空穴注入器区域，包括两个具有总厚度大于约100，通过电子势垒与相邻的空穴注入器区域隔开的有效增益量子阱区域，该电子势垒具有足以降低区域中心活性电子量子阱和喷射器孔状态之间的波函数的平方的重叠度，以及分离活性区域的至少一级的电子和空穴注入器的厚AlSb屏障。

6. 发明授权

US08798111B2 Interband cascade lasers with engineered carrier densities 有权
标题翻译：具有工程载波密度的带间级联激光器
公开(公告)号：US08798111B2
公开(公告)日：2014-08-05
申请号：US13422309
申请日：2012-03-16
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , ChulSoo Kim , Mijin Kim , Charles D. Merritt
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , ChulSoo Kim , Mijin Kim , Charles D. Merritt
IPC分类号： H01S5/34 , H01S5/30
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313
摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.
摘要翻译：提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值电流密度Jth需要实现激光。对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。

7. 发明授权

US08385378B2 Interband cascade lasers 有权
标题翻译：带间级联激光器
公开(公告)号：US08385378B2
公开(公告)日：2013-02-26
申请号：US13608115
申请日：2012-09-10
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , James R. Lindle , Chul Soo Kim , Mijin Kim
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , James R. Lindle , Chul Soo Kim , Mijin Kim
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/3401 , H01S5/3422 , H01S5/34306
摘要： A gain medium and an interband cascade laser, having the gain medium are presented. The gain medium can have one or both of the following features: (1) the thicknesses of the one or more hole quantum wells in the hole injector region are reduced commensurate with the thickness of the active hole quantum well in the active quantum well region, so as to place the valence band maximum in the hole injector region at least about 100 meV lower than the valence band maximum in the active hole quantum well; and (2) the thickness of the last well of the electron injector region is between 85 and 110% of the thickness of the first active electron quantum well in the active gain region of the next stage of the medium. A laser incorporating a gain medium in accordance with the present invention can emit in the mid-IR range from about 2.5 to 8 μm at high temperatures with room-temperature continuous wave operation to wavelengths of at least 4.6 μm, threshold current density of about 400 A/cm2 and threshold power density of about 900 W/cm2.
摘要翻译：提出了具有增益介质的增益介质和带间级联激光器。增益介质可以具有以下特征中的一个或两个：（1）空穴注入器区域中的一个或多个空穴量子阱的厚度与有源量子阱区域中的有源孔量子阱的厚度相当，使得空穴注入器区域中的价带最大值比活性孔量子阱中的价带最大值低至少100meV; 和（2）电子注入器区域的最后一个阱的厚度在介质的下一阶段的有源增益区域中的第一有源电子量子阱的厚度的85至110％之间。包含根据本发明的增益介质的激光器可以在高温下在室温连续波操作中在约2.5至8μm的中红外范围内发射至少为4.6μm的波长，约400的阈值电流密度 A / cm 2和阈值功率密度约900W / cm2。

8. 发明申请

US20120269221A1 Interband Cascade Lasers with Engineered Carrier Densities 有权
标题翻译：带有工程载波密度的带间级联激光器
公开(公告)号：US20120269221A1
公开(公告)日：2012-10-25
申请号：US13422309
申请日：2012-03-16
申请人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , ChulSoo Kim , Mijin Kim , Charles D. Merritt
发明人： Igor Vurgaftman , Jerry R. Meyer , Chadwick Lawrence Canedy , William W. Bewley , ChulSoo Kim , Mijin Kim , Charles D. Merritt
IPC分类号： H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/305 , H01S5/3086 , H01S5/3401 , H01S5/3407 , H01S5/3422 , H01S5/34313
摘要： Methods for improving the performance of type-II and type-I ICLs, particularly in the mid-IR wavelength range, are provided. The electron injector of a type-II or a type-I ICL can be heavily n-doped to increase the ratio of electrons to holes in the active quantum wells, thereby increasing the probability of radiative recombination in the active quantum wells and reducing the threshold current density Jth needed to achieve lasing. For both type-II and type-I ICLs, the doping should have a sheet density in the low-1012 range. In either the type-II or the type-I case, in some embodiments, heavy doping can be concentrated in the middle quantum wells of the electron injector, while in other embodiments, doping with silicon can be shifted towards the active quantum wells.
摘要翻译：提供了改善II型和I型ICL的性能的方法，特别是在中红外波长范围内。 II型或I型ICL的电子注入器可以被非常n掺杂以增加有源量子阱中的电子与空穴的比例，从而增加有源量子阱中的辐射复合的概率并降低阈值电流密度Jth需要实现激光。对于II型和I型ICL，掺杂应具有低1012范围内的薄片密度。在II型或I型的情况下，在一些实施例中，重掺杂可以集中在电子注入器的中量子阱中，而在其它实施例中，可以向有源量子阱移动掺杂硅。

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