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1. 发明授权

US06175296B1 Potentiometer provided with giant magnetoresistive effect elements 有权
标题翻译：电位器配有巨磁阻效应元件
公开(公告)号：US06175296B1
公开(公告)日：2001-01-16
申请号：US09353293
申请日：1999-07-12
申请人： Ichirou Tokunaga , Seiji Kikuchi , Yoshito Sasaki , Takashi Hatanai
发明人： Ichirou Tokunaga , Seiji Kikuchi , Yoshito Sasaki , Takashi Hatanai
IPC分类号： H01L4300
CPC分类号： G01D5/145
摘要： The potentiometer of the present invention includes at least a pair of giant magnetoresistive effect elements, in which the giant magnetoresistive effect elements to be paired are formed on a substrate in a state that the elements are connected mutually electrically with the orientations of magnetization axes of the pinned magnetic layers facing 180° opposite each other, and a magnetic coding member is rotatably provided to face the giant magnetoresistive effect elements on the substrate, the magnetic coding member is disposed in such a manner that the center of rotation of the magnetic coding member passes through an intermediate position of the giant magnetoresistive effect elements to be paired, and the magnetic coding member has at least two magnetic poles formed along the direction of rotation of itself.
摘要翻译：本发明的电位计包括至少一对巨磁阻效应元件，其中要成对的巨磁电阻效应元件以这样的状态形成在基板上，即元件与电磁轴线的方向相互电连接被固定的磁性层相对于彼此相对的180°，并且磁性编码构件可旋转地设置成面对基板上的巨磁阻效应元件，磁编码构件以这样的方式设置，使得磁编码构件的旋转中心通过通过要成对的巨磁阻效应元件的中间位置，并且磁编码构件具有沿其自身旋转方向形成的至少两个磁极。

2. 发明授权

US06329818B1 Magnetic field sensor having giant magnetoresistive effect elements, manufacturing method and apparatus therefor 有权
标题翻译：具有巨磁阻效应元件的磁场传感器，其制造方法和装置
公开(公告)号：US06329818B1
公开(公告)日：2001-12-11
申请号：US09353925
申请日：1999-07-14
申请人： Ichirou Tokunaga , Seiji Kikuchi , Yoshito Sasaki , Takashi Hatanai
发明人： Ichirou Tokunaga , Seiji Kikuchi , Yoshito Sasaki , Takashi Hatanai
IPC分类号： G01R3309
CPC分类号： B82Y25/00 , G01R33/093 , Y10S428/90
摘要： The present invention is characterized in that a first giant magnetoresistive effect element and a second giant magnetoresistive effect element are provided along a first straight line with the magnetization of the pinned magnetic layer c oriented in a fixed direction, and that a third giant magnetoresistive effect element and a fourth giant magnetoresistive effect element are provided along a second straight line, which is parallel to the first straight line, with the magnetization of the pinned magnetic layer oriented 180° opposite to the directions of magnetization of the pinned magnetic layers in the first and second giant magnetoresistive effect elements.
摘要翻译：本发明的特征在于沿着第一直线提供第一巨磁阻效应元件和第二巨磁阻效应元件，其中固定磁性层c的磁化沿固定方向取向，并且第三巨磁阻效应元件并且沿着与第一直线平行的第二直线设置第四巨磁阻效应元件，其中被钉扎的磁性层的磁化与第一和第二直线的被钉扎的磁性层的磁化方向相反地定向成180° 第二巨磁阻效应元素。

3. 发明授权

US06452382B1 Encoder provided with giant magnetoresistive effect elements 失效
标题翻译：编码器提供巨型磁阻效应元件
公开(公告)号：US06452382B1
公开(公告)日：2002-09-17
申请号：US09352170
申请日：1999-07-12
申请人： Ichirou Tokunaga , Seiji Kikuchi , Yoshito Sasaki , Takashi Hatanai
发明人： Ichirou Tokunaga , Seiji Kikuchi , Yoshito Sasaki , Takashi Hatanai
IPC分类号： G01B730
CPC分类号： G01D5/145 , G01B7/30
摘要： The encoder of the present invention includes at least a pair of giant magnetoresistive effect elements, in which the giant magnetoresistive effect elements to be paired are formed on a substrate in a state that the elements are connected mutually electrically with the orientations of magnetization axes of the pinned magnetic layers each facing the same direction in parallel, a magnetic coding member is rotatably supported to face the giant magnetoresistive effect elements on the substrate, and the magnetic coding member has a plurality of magnetic poles formed along the direction of rotation of itself.
摘要翻译：本发明的编码器包括至少一对巨磁阻效应元件，其中要成对的巨磁阻效应元件以这样的状态形成在基片上，即元件与每个面向相同方向并联的固定磁性层，磁性编码构件被可旋转地支撑以面对基板上的巨磁阻效应元件，并且磁编码构件具有沿其自身旋转方向形成的多个磁极。

4. 发明授权

US06036825A Magnetic film forming method 有权
标题翻译：磁膜成型方法
公开(公告)号：US06036825A
公开(公告)日：2000-03-14
申请号：US264839
申请日：1999-03-08
申请人： Eiji Umetsu , Makoto Nakazawa , Yoshito Sasaki , Takashi Hatanai , Akihiro Makino
发明人： Eiji Umetsu , Makoto Nakazawa , Yoshito Sasaki , Takashi Hatanai , Akihiro Makino
IPC分类号： H01F10/10 , H01F41/18 , H01F10/00
CPC分类号： H01F41/183
摘要： In a magnetic film forming method, a plurality of chips formed of Fe.sub.3 O.sub.4 and a plurality of chips formed of HfO.sub.2 are disposed on a target formed of Fe. The composition ratio of a Fe--Hf--O film can be set within a proper range by adjusting the numbers of the up said two kind of chips.
摘要翻译：在磁性膜形成方法中，由Fe 3 O 4形成的多个芯片和由HfO 2形成的多个芯片设置在由Fe形成的靶上。通过调整上述两种芯片的数量，可以将Fe-Hf-O膜的组成比设定在适当的范围内。

5. 发明授权

US06239594B1 Mageto-impedance effect element 失效
标题翻译：磁阻效应元件
公开(公告)号：US06239594B1
公开(公告)日：2001-05-29
申请号：US09401624
申请日：1999-09-22
申请人： Yutaka Naito , Yoshito Sasaki , Takashi Hatanai
发明人： Yutaka Naito , Yoshito Sasaki , Takashi Hatanai
IPC分类号： G01R3302
CPC分类号： G01R33/02
摘要： A magnet layer or antiferromagnetic thin film layer composed of a thin film serving as a bias magnetic field applying member is provided at both ends of a magnetic thin film having a magneto-impedance effect so that a bias magnetic field Hbi is applied to the magnetic thin film layer in parallel with the direction of application of an external magnetic field Hex to the magnetic thin film layer. As the magnetic thin film layer, a soft magnetic material having the composition ColTamHfn, FehRiOl, (Co1-vTv)xMyOzXw, T100-d-e-f-gXdMeZfQg or T100-p-q-f-gSipAlqMeZfQg is used.
摘要翻译：由具有磁阻效应的磁性薄膜的两端设置由用作偏磁场施加部件的薄膜构成的磁铁层或反铁磁性薄膜层，使偏磁场Hbi施加于磁性薄膜薄膜层与施加外部磁场六边形的方向并联，到磁性薄膜层。作为磁性薄膜层，使用具有ColTamHfn，FehRiO1，（Co1-vTv）xMyOzXw，T100-d-e-f-gXdMeZfQg或T100-p-q-f-gSipAlqMeZfQg组成的软磁性材料。

6. 发明授权

US06171716B2 Soft magnetic film, and thin film magnetic head, planer magnetic element, and filter using the soft magnetic film 有权
标题翻译：软磁膜，薄膜磁头，平面磁元件，以及使用软磁膜的滤波器
公开(公告)号：US06171716B2
公开(公告)日：2001-01-09
申请号：US09313924
申请日：1999-05-18
申请人： Yoshito Sasaki , Makoto Nakazawa , Takashi Hatanai , Akihiro Makino
发明人： Yoshito Sasaki , Makoto Nakazawa , Takashi Hatanai , Akihiro Makino
IPC分类号： B32B900
CPC分类号： H01F10/131 , G11B5/3109 , Y10S428/90 , Y10T428/1136
摘要： A soft magnetic film includes Fe as a major constituent; at least one element M selected from the group consisting of Zr, Hr, V, Nb, Ta, W, Mo, and rare earth elements (excluding Sm); at least one element L selected from the group consisting of Ti, Sn, Sm, and Si: and at least one element R selected from the group consisting of O, C, and N. The film has a structure including a mixture of an amorphous phase containing a large amount of the oxide of the element M and a fine crystalline phase containing a large amount of Fe, and the fine crystalline phase further contains the element L. Thin film magnetic heads, planar magnetic elements, and filters using the soft magnetic film are also disclosed.
摘要翻译：软磁性膜包括Fe作为主要成分; 选自由Zr，Hr，V，Nb，Ta，W，Mo和稀土元素（Sm除外）组成的组中的至少一种元素M; 选自由Ti，Sn，Sm和Si组成的组中的至少一种元素L.以及选自O，C和N的至少一种元素R.该膜具有包括非晶态的混合物的结构相含有大量的元素M的氧化物和含有大量Fe的细晶相，微细晶相还含有元素L.薄膜磁头，平面磁性元件和使用软磁性的滤波器电影也被披露。

7. 发明授权

US06191577B1 Magnetic sensor exhibiting large change in resistance at low external magnetic field 失效
标题翻译：磁传感器在低外部磁场下表现出较大的电阻变化
公开(公告)号：US06191577B1
公开(公告)日：2001-02-20
申请号：US09036606
申请日：1998-03-06
申请人： Yoshito Sasaki , Naoya Hasegawa , Akihiro Makino , Ichiro Tokunaga , Seiji Kikuchi
发明人： Yoshito Sasaki , Naoya Hasegawa , Akihiro Makino , Ichiro Tokunaga , Seiji Kikuchi
IPC分类号： G01R3309
CPC分类号： B82Y25/00 , B82Y10/00 , G01R33/093 , G11B2005/3996 , H01F10/3268
摘要： A magnetoresistive sensor includes a plurality of multilayered magnetoresistive films arranged in parallel. Each multilayered magnetoresistive film includes at least one pinned ferromagnetic layer and at least one free magnetic layer. Reversion of magnetization of the pinned ferromagnetic layer is pinned, whereas the vector of magnetization of the free ferromagnetic layer freely reverses in response to an external magnetic field. The vectors of magnetization of the pinned ferromagnetic layers in two adjacent multilayered magnetoresistive films are substantially antiparallel to each other.
摘要翻译：磁阻传感器包括并列布置的多个多层磁阻膜。每个多层磁阻膜包括至少一个钉扎铁磁层和至少一个自由磁性层。固定的铁磁层的磁化反转被固定，而自由铁磁层的磁化矢量响应于外部磁场自由地反转。两个相邻的多层磁阻膜中的钉扎铁磁层的磁化向量基本上是反平行的。

8. 发明申请

US20120223240A1 RADIATION DETECTION APPARATUS, SCINTILLATOR PANEL, METHOD FOR MANUFACTURING SAME AND RADIATION DETECTION SYSTEM 有权
标题翻译：辐射检测装置，扫描仪面板及其制造方法及辐射检测系统
公开(公告)号：US20120223240A1
公开(公告)日：2012-09-06
申请号：US13366066
申请日：2012-02-03
申请人： Tomoaki Ichimura , Satoshi Okada , Kazumi Nagano , Keiichi Nomura , Yohei Ishida , Yoshito Sasaki , Akiya Nakayama
发明人： Tomoaki Ichimura , Satoshi Okada , Kazumi Nagano , Keiichi Nomura , Yohei Ishida , Yoshito Sasaki , Akiya Nakayama
IPC分类号： G01T1/20 , B32B37/02 , B32B37/14 , B32B9/00
CPC分类号： G21K4/00 , G01T1/2002 , H01L27/1462 , H01L27/14658
摘要： A radiation detection apparatus comprising a sensor panel and a scintillator panel is provided. The scintillator panel including a substrate, a scintillator disposed on the substrate, and a scintillator protective film that has a first organic protective layer and an inorganic protective layer, and covers the scintillator. The scintillator protective film is located between the sensor panel and the scintillator. The first organic protective layer is located on a scintillator side from the inorganic protective layer. A surface on a sensor panel side of the scintillator is partially in contact with the inorganic protective layer.
摘要翻译：提供一种包括传感器面板和闪烁体面板的放射线检测装置。闪烁体面板包括基板，设置在基板上的闪烁体和具有第一有机保护层和无机保护层的闪烁体保护膜，并且覆盖闪烁体。闪烁体保护膜位于传感器面板和闪烁体之间。第一有机保护层位于与无机保护层相反的闪烁体一侧。闪烁体的传感器面板侧的表面部分地与无机保护层接触。

9. 发明申请

US20120219115A1 RADIATION IMAGING APPARATUS AND RADIATION DETECTION SYSTEM 审中-公开
标题翻译：辐射成像装置和辐射检测系统
公开(公告)号：US20120219115A1
公开(公告)日：2012-08-30
申请号：US13371547
申请日：2012-02-13
申请人： Satoshi Okada , Kazumi Nagano , Keiichi Nomura , Yohei Ishida , Yoshito Sasaki , Tomoaki Ichimura
发明人： Satoshi Okada , Kazumi Nagano , Keiichi Nomura , Yohei Ishida , Yoshito Sasaki , Tomoaki Ichimura
IPC分类号： G01N23/04
CPC分类号： A61B6/4233 , A61B6/0407 , A61B6/42 , A61B6/4429 , A61B6/502 , A61B6/587
摘要： A radiation imaging apparatus includes a sensor which is placed in an internal space in the chassis and detects radiation. The apparatus includes a positioning mechanism which moves the sensor in the internal space to determine a position where radiation is detected, so as to change an area where radiation imaging is performed by detecting radiation using the sensor.
摘要翻译：辐射成像装置包括放置在底盘的内部空间并检测辐射的传感器。该装置包括定位机构，其使传感器在内部空间中移动以确定检测到辐射的位置，以便通过使用传感器检测辐射来改变进行辐射成像的区域。

10. 发明申请

US20110309258A1 RADIATION DETECTION APPARATUS, MANUFACTURING METHOD THEREFOR, AND RADIATION IMAGING SYSTEM 有权
标题翻译：辐射检测装置，其制造方法和辐射成像系统
公开(公告)号：US20110309258A1
公开(公告)日：2011-12-22
申请号：US13108317
申请日：2011-05-16
申请人： Yohei Ishida , Satoshi Okada , Kazumi Nagano , Keiichi Nomura , Yoshito Sasaki
发明人： Yohei Ishida , Satoshi Okada , Kazumi Nagano , Keiichi Nomura , Yoshito Sasaki
IPC分类号： G01T1/20 , H01L31/18
CPC分类号： G01T1/20 , H01L27/14634 , H01L27/14676
摘要： A radiation detection apparatus comprising: a sensor panel including a photoelectric conversion region and an electrically conductive pattern that is electrically connected to the photoelectric conversion region; a scintillator layer disposed over the photoelectric conversion region of the sensor panel; a wiring member including a portion overlapping with the electrically conductive pattern and electrically connected to the electrically conductive pattern and; and a protective film covering the scintillator layer and the portion of the wiring member that overlaps with the electrically conductive pattern is provided. A region of the protective film that covers the wiring member includes a portion that is press-bonded to the sensor panel.
摘要翻译：一种放射线检测装置，包括：传感器面板，包括光电转换区域和电连接到所述光电转换区域的导电图案; 闪烁体层，设置在传感器面板的光电转换区域的上方; 布线构件，其包括与所述导电图案重叠并电连接到所述导电图案的部分; 并且提供覆盖闪烁体层和布线构件与导电图案重叠的部分的保护膜。覆盖布线构件的保护膜的区域包括压接在传感器面板上的部分。

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