会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Tricyclic compound having anti-allergic activities
    • 三环化合物具有抗过敏活性
    • US5643920A
    • 1997-07-01
    • US325339
    • 1994-10-27
    • Hidenori MochizukiKazuo KatoIchiro YamamotoKiyoshi Mizuguchi
    • Hidenori MochizukiKazuo KatoIchiro YamamotoKiyoshi Mizuguchi
    • C07D471/06A61K31/44C07D221/06C07D455/03
    • C07D471/06
    • A nitrogen-containing tricyclic compound represented by formula (I): ##STR1## a salt thereof, or a solvate of said compound or said salt, wherein R represents phenyl or naphthyl group which is unsubstituted or substituted at one to five sites with a group such as a halogen atom; a straight chain or branched alkyl group containing 1 to 10 carbon atoms which is unsubstituted or substituted with one or more halogen atoms; or the like; Y represents hydrogen atom; and Z represents a group such as hydrogen atom, hydroxyl group, or the like; or Y and Z together represent a group such as hydrazono group, hydroxyimino group, or the like which is unsubstituted or substituted with a particular group; and X.sup.1 -X.sup.2 .about.C.about.X.sup.3 represents CH--N--C.dbd.C or N--C.dbd.C--N; provided that when X.sup.1 -X.sup.2 .about.C.about.X.sup.3 represents N--C.dbd.C--N, Y and Z does not together represent hydroxyimino group or oxygen atom; is capable of inhibiting the production of IgE antibody, and therefore, is useful as a prophylactic and/or therapeutic agent for allergic diseases.
    • PCT No.PCT / JP93 / 00549 Sec。 371日期:1994年10月27日 102(e)日期1994年10月27日PCT提交1993年4月27日PCT公布。 公开号WO93 / 22313 日本公开号为1993年11月11日,由式(I)表示的含氮三环化合物:其中R 1表示未取代或取代的苯基或萘基的化合物或其盐的溶剂化物 在一至五个具有卤素原子的位置; 含有1至10个碳原子的直链或支链烷基,其未被取代或被一个或多个卤素原子取代; 或类似物; Y表示氢原子; Z表示氢原子,羟基等基团, 或Y和Z一起表示未被取代或被特定基团取代的亚氨基,羟基亚氨基等基团; X1-X2差异C差异X3表示CH-N-C = C或N-C = C-N; 条件是当X 1 -X 2差异C差异X3表示N-C = C-N时,Y和Z不一起表示羟基亚氨基或氧原子; 能够抑制IgE抗体的产生,因此可用作过敏性疾病的预防和/或治疗剂。
    • 5. 发明授权
    • Agents for treating neuropathic pain
    • 用于治疗神经性疼痛的药剂
    • US06642257B2
    • 2003-11-04
    • US09969644
    • 2001-10-04
    • Ichiro YamamotoManabu ItohFumiaki YamasakiYasushige AkadaYutaka MiyazakiShinichi Ogawa
    • Ichiro YamamotoManabu ItohFumiaki YamasakiYasushige AkadaYutaka MiyazakiShinichi Ogawa
    • A61K3144
    • C07D405/06C07D211/48C07D407/06C07D409/06
    • The present invention relates to a compound represented by Formula (I) below: (wherein A represents, for example, phenyl group substituted by R1 and R2, or an unsubstituted furyl group or an unsubstitued thienyl group; R1 represents, for example, hydrogen atom, fluorine atom, chlorine atom, trifluoromethyl group, nitro group, cyano group or methyl group while R2 represents, for example, hydrogen atom; R3 represents, for example, hydrogen atom or methyl group; R4 represents, for example, hydrogen atom or methyl group; R5 represents ethoxy group or isopropoxy group; X represents group: —CH(OH)— or methylene group; and Z represents, for example, a single bond or methylene group unsubstituted or substituted by hydroxyl group), and its salts, and medicinal compositions containing, as their active ingredient, the above compound or its salts. The compound of this invention, which is orally applicable, is highly effective for treating neuroapthic pain while presenting with fewer side-effects than do the conventional analgesics.
    • 本发明涉及由下式(I)表示的化合物:其中A表示例如被R 1和R 2取代的苯基或未取代的呋喃基或未取代的噻吩基; 1表示例如氢原子,氟原子,氯原子,三氟甲基,硝基,氰基或甲基,而R 2表示例如氢原子; R 3表示例如氢 原子或甲基; R 4表示例如氢原子或甲基; R 5表示乙氧基或异丙氧基; X表示基团:-CH(OH) - 或亚甲基; Z表示对于 例如,未取代或被羟基取代的单键或亚甲基)及其盐,以及含有作为其活性成分的上述化合物或其盐的药物组合物。 口服适用的本发明化合物对于治疗神经痛与非常有效,同时具有比常规止痛剂更少的副作用。
    • 9. 发明授权
    • Method of manufacturing a semiconductor device
    • 制造半导体器件的方法
    • US08440521B2
    • 2013-05-14
    • US13067788
    • 2011-06-27
    • Naomi FukumakiEiji HasegawaToshihiro IizukaIchiro Yamamoto
    • Naomi FukumakiEiji HasegawaToshihiro IizukaIchiro Yamamoto
    • H01L21/3105
    • H01L21/823857H01L21/823842
    • A method of manufacturing a semiconductor device having a p-type field effect transistor and an n-type field effect transistor includes the steps of: forming an interface insulating layer and a high-permittivity layer on a substrate in the stated order; forming a pattern of a sacrifice layer on the high-permittivity layer; forming a metal-containing film containing metal elements therein on the high-permittivity layer in a first region where the sacrifice layer is formed and a second region where no sacrifice layer is formed; introducing the metal elements into an interface between the interface insulating layer and the high-permittivity layer in the second region by conducting a heat treatment; and removing the sacrifice layer by wet etching, wherein in the removing step, the sacrifice layer is etched easily more than the high-permittivity layer. With this configuration, the semiconductor device excellent in reliability is obtained.
    • 制造具有p型场效应晶体管和n型场效应晶体管的半导体器件的方法包括以下步骤:按照所述顺序在衬底上形成界面绝缘层和高电容率层; 在高电介质层上形成牺牲层的图案; 在形成有牺牲层的第一区域和形成牺牲层的第二区域的高介电常数层上形成含有金属元素的含金属膜; 通过进行热处理,将金属元素引入第二区域中的界面绝缘层与高电容率层之间的界面; 并且通过湿法蚀刻去除牺牲层,其中在去除步骤中,牺牲层比高介电常数层容易蚀刻。 由此,能够获得可靠性优异的半导体装置。