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1. 发明申请

US20060115588A1 System and method of fabrication and application of thin-films with continuously graded or discrete physical property parameters to functionally broadband monolithic microelectronic optoelectronic/sensor/actuator device arrays 有权
标题翻译：具有连续分级或离散物理参数的薄膜的制造和应用的系统和方法，用于功能宽带单片微电子光电/传感器/致动器器件阵列
公开(公告)号：US20060115588A1
公开(公告)日：2006-06-01
申请号：US10998149
申请日：2004-11-29
申请人： Ichiro Takeuchi , Wei Yang , Kao-Shuo Chang , Ratnakar Vispute , Thirumalai Venkatesan
发明人： Ichiro Takeuchi , Wei Yang , Kao-Shuo Chang , Ratnakar Vispute , Thirumalai Venkatesan
IPC分类号： C23C16/00
CPC分类号： C23C14/08 , C23C14/0084
摘要： A system and method are provided to fabricate thin-films having different physical property parameters or having physical property parameters that continuously change across functionally broadband monolithic device arrays. The fabrication method deposits the thin-film including layers on a substrate of a monolithic chip. The method defines a desired gradient profile of each layer forming the thin-film, each gradient profile including a desired thinnest profile and a desired thickest profile. The method further aligns an aperture of a mask over the substrate to form the thin-film and calculates a shutter speed for the specified gradient profile of each layer across the desired area of the substrate, and deposits each layer on the substrate, through the aperture, as the aperture of the shutter moves at the calculated shutter speed from the desired thinnest profile of each layer to the desired thickest profile of each layer.
摘要翻译：提供了一种系统和方法来制造具有不同物理性质参数或具有在功能上宽带单片器件阵列上连续变化的物理性质参数的薄膜。制造方法将薄膜包括层沉积在单片芯片的基板上。该方法定义了形成薄膜的每个层的期望的梯度轮廓，每个梯度轮廓包括期望的最薄轮廓和期望的最厚轮廓。该方法进一步将掩模的孔径对准衬底上的孔径以形成薄膜，并且计算穿过衬底的期望区域的每层的指定梯度分布的快门速度，并通过孔径将每个层沉积在衬底上，因为快门的光圈以所计算的快门速度从每层的期望的最薄轮廓移动到每层的期望的最厚轮廓。

2. 发明授权

US07132668B2 MgZnO based UV detectors 失效
标题翻译：基于MgZnO的紫外检测器
公开(公告)号：US07132668B2
公开(公告)日：2006-11-07
申请号：US10311997
申请日：2001-06-26
申请人： Ratnakar Vispute , Thirumalai Venkatesan , Wei Yang , Supab Choopun
发明人： Ratnakar Vispute , Thirumalai Venkatesan , Wei Yang , Supab Choopun
IPC分类号： G01J5/00
CPC分类号： H01L31/109 , H01L31/022408 , H01L31/0236 , H01L31/0288 , Y02E10/50
摘要： Photoconductive devices (1,2) comprising MgxZn1−xO, that is preferably epitaxially deposited on a substrate (21), optionally also including a buffer layer (22), wherein x has a value such that the layer is sensitive to UV light. The a MgZnO device (2) having predetermined electrical and optical properties and first and second electrodes (3) deposited on a surface of the device, the second electrode being spaced from the first electrode. A voltage source (4) is connected across the first and second electrodes to create an electric field within the device. In operation, when the surface of the device upon which the electrodes are deposited is subjected to a photon emission, electron-hole pairs are created within the device and flow within the device because of the electric field.
摘要翻译：优选外延沉积在衬底（21）上的包含Mg x Zn 1-x O O的光导器件（1,2），任选地还包括缓冲层（22 ），其中x具有使得该层对UV光敏感的值。具有预定电气和光学特性的MgZnO器件（2）和沉积在器件表面上的第一和第二电极（3），第二电极与第一电极间隔开。电压源（4）跨越第一和第二电极连接以在器件内产生电场。在操作中，当沉积有电极的器件的表面经受光子发射时，由于电场，在器件内部产生电子 - 空穴对并在器件内流动。

3. 发明授权

US5635453A Superconducting thin film system using a garnet substrate 失效
标题翻译：使用石榴石基板的超导薄膜系统
公开(公告)号：US5635453A
公开(公告)日：1997-06-03
申请号：US362894
申请日：1994-12-23
申请人： Alberto Pique , Kolagani S. Harshavardhan , Thirumalai Venkatesan
发明人： Alberto Pique , Kolagani S. Harshavardhan , Thirumalai Venkatesan
IPC分类号： C30B23/02 , H01L39/24 , B32B9/00
CPC分类号： H01L39/2461 , C30B23/02 , C30B29/22 , C30B29/225 , Y10S428/93 , Y10S505/701
摘要： A superconducting thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer. A high temperature superconducting layer (18) is epitaxially grown on an upper surface of the second perovskite layer (16) and is lattice matched to the second perovskite compound layer (16) for incorporation of passive components within the high temperature superconducting layer (18) having high frequency microwave applications.
摘要翻译：为高频微波应用提供超导薄膜系统（10），其中单晶高温超导层（18）与石榴石衬底（12）集成。在石榴石基材层（12）的上表面上外延生长第一钙钛矿化合物缓冲层（14），并限定小于石榴石基材层（12）的晶格常数的晶格常数。在第一钙钛矿层（14）的上表面上外延生长第二钙钛矿层（16），并限定小于第一钙钛矿层的晶格常数的晶格常数。在第二钙钛矿层（16）的上表面上外延生长高温超导层（18），并且与第二钙钛矿化合物层（16）晶格匹配，以在高温超导层（18）内并入无源部件，具有高频微波应用。

4. 发明授权

US5420102A Superconducting films on alkaline earth fluoride substrate with multiple buffer layers 失效
标题翻译：具有多个缓冲层的碱土氟化物衬底上的超导膜
公开(公告)号：US5420102A
公开(公告)日：1995-05-30
申请号：US283719
申请日：1994-08-01
申请人： Kolagani S. Harshavardhan , Thirumalai Venkatesan
发明人： Kolagani S. Harshavardhan , Thirumalai Venkatesan
IPC分类号： H01L39/24 , B32B9/00
CPC分类号： H01L39/2461 , H01L39/2448 , H01L39/2454 , Y10S428/937
摘要： A high frequency superconducting device structure is disclosed which comprises an alkaline earth fluoride substrate with a magnesium oxide lower buffer layer on the alkaline earth substrate and an upper buffer layer epitaxial template layer on the magnesium oxide layer for providing a template for epitaxial growth of a high temperature superconducting film on the upper buffer layer, providing reduced dielectric and conducting losses at high frequencies. The disclosed structure may be incorporated into a multi-chip module (MCM) for providing very high speed interconnections.
摘要翻译：公开了一种高频超导器件结构，其包括在碱土基底上具有氧化镁下缓冲层的碱土氟化物衬底和氧化镁层上的上缓冲层外延模板层，用于提供用于外延生长的高温模板上缓冲层上的温度超导膜，在高频下提供降低的介电和导电损耗。所公开的结构可以并入用于提供非常高速互连的多芯片模块（MCM）中。

5. 发明授权

US5041415A Superconducting noise discriminator 失效
标题翻译：超导噪声识别器
公开(公告)号：US5041415A
公开(公告)日：1991-08-20
申请号：US311076
申请日：1989-02-16
申请人： Anatoly Frenkel , Chinlon Lin , Thirumalai Venkatesan
发明人： Anatoly Frenkel , Chinlon Lin , Thirumalai Venkatesan
IPC分类号： H04B3/00 , H04L25/08
CPC分类号： H04L25/085 , H04B3/00
摘要： A noise limiter for a binary circuit in which a thin film superconductor is put in shunt between a transmission line and ground. The thin film exhibits a gradual transition region as a function of current between normal conduction and the completely superconductive state. The dimensions of the thin film are chosen such that a high level signal on the transmission line falls in the gradual transition region and the impedance of the shunt is greater than the characteristic impedance of the transmission line while a noise component on the low level signal falls in the superconductive region and therefore is reflected by the zero-impedance shunt.
摘要翻译：用于二进制电路的噪声限制器，其中薄膜超导体在传输线和地之间分流。薄膜表现出作为正常传导和完全超导状态之间的电流的函数的逐渐过渡区域。选择薄膜的尺寸使得传输线上的高电平信号落在逐渐过渡区域中，并且分流器的阻抗大于传输线的特性阻抗，而低电平信号上的噪声分量下降在超导区域，因此被零阻抗分流反射。

6. 发明授权

US07019521B2 Fault isolation of circuit defects using comparative magnetic field imaging 有权
标题翻译：使用比较磁场成像对电路缺陷进行故障隔离
公开(公告)号：US07019521B2
公开(公告)日：2006-03-28
申请号：US10940715
申请日：2004-09-15
申请人： Antonio Orozco , Elena Talanova , Alfred B. Cawthorne , Lee Knauss , Thirumalai Venkatesan
发明人： Antonio Orozco , Elena Talanova , Alfred B. Cawthorne , Lee Knauss , Thirumalai Venkatesan
IPC分类号： G01N27/82 , G01R33/02
CPC分类号： G01R31/311
摘要： Circuit flaws in microelectronic circuitry present regions of high resistance in which a current distribution deviates from that of a defect-free circuit. The altered current distribution emits a correspondingly altered magnetic field in accordance with Ampere's Law. When compared with the magnetic field of a defect-free circuit, the anomaly in the magnetic field of the defective device is detected and the location of the circuit flaw may be determined therefrom. As the anomaly in the magnetic field is very small in magnitude, a sensitive magnetic microscope is utilized to obtain images of the magnetic fields of a defect-free reference device and a device-under-test. The distance between the magnetic sensor and the devices being scanned is precisely controlled to minimize influences of scanning distance on the difference in measured magnetic field strength. Comparative image analysis reveals the location of the circuit flaw. Maximal image registration through image interpolation, displacement and resampling optimizes the comparative image analysis.
摘要翻译：微电子电路中的电路缺陷呈现高电阻区域，其中电流分布偏离无缺陷电路的电流分布。改变的电流分布根据安培定律发射相应改变的磁场。当与无缺陷电路的磁场相比时，检测到故障装置的磁场中的异常，并且可以从其确定电路缺陷的位置。由于磁场中的异常非常小，所以使用敏感磁显微镜来获得无缺陷参考装置的磁场图像和被测装置。精确地控制磁传感器和被扫描的装置之间的距离，以最小化扫描距离对测得的磁场强度的差异的影响。比较图像分析显示电路缺陷的位置。通过图像插值，位移和重采样的最大图像配准优化了比较图像分析。

7. 发明申请

US20050057246A1 Fault isolation of circuit defects using comparative magnetic field imaging 有权
标题翻译：使用比较磁场成像对电路缺陷进行故障隔离
公开(公告)号：US20050057246A1
公开(公告)日：2005-03-17
申请号：US10940715
申请日：2004-09-15
申请人： Antonio Orozco , Elena Talanova , Alfred Cawthorne , Lee Knauss , Thirumalai Venkatesan
发明人： Antonio Orozco , Elena Talanova , Alfred Cawthorne , Lee Knauss , Thirumalai Venkatesan
IPC分类号： G01N27/82 , G01R31/311 , G03G15/08
CPC分类号： G01R31/311
摘要： Circuit flaws in microelectronic circuitry present regions of high resistance in which a current distribution deviates from that of a defect-free circuit. The altered current distribution emits a correspondingly altered magnetic field in accordance with Ampere's Law. When compared with the magnetic field of a defect-free circuit, the anomaly in the magnetic field of the defective device is detected and the location of the circuit flaw may be determined therefrom. As the anomaly in the magnetic field is very small in magnitude, a sensitive magnetic microscope is utilized to obtain images of the magnetic fields of a defect-free reference device and a device-under-test. The distance between the magnetic sensor and the devices being scanned is precisely controlled to minimize influences of scanning distance on the difference in measured magnetic field strength. Comparative image analysis reveals the location of the circuit flaw. Maximal image registration through image interpolation, displacement and resampling optimizes the comparative image analysis.
摘要翻译：微电子电路中的电路缺陷呈现高电阻区域，其中电流分布偏离无缺陷电路的电流分布。改变的电流分布根据安培定律发射相应改变的磁场。当与无缺陷电路的磁场相比时，检测到故障装置的磁场中的异常，并且可以从其确定电路缺陷的位置。由于磁场中的异常非常小，所以使用敏感磁显微镜来获得无缺陷参考装置的磁场图像和被测装置。精确地控制磁传感器和被扫描的装置之间的距离，以最小化扫描距离对测得的磁场强度的差异的影响。比较图像分析显示电路缺陷的位置。通过图像插值，位移和重采样的最大图像配准优化了比较图像分析。

8. 发明授权

US6074990A Superconducting garnet thin film system 失效
标题翻译：超导石榴石薄膜系统
公开(公告)号：US6074990A
公开(公告)日：2000-06-13
申请号：US791330
申请日：1997-01-31
申请人： Alberto Pique , Kolagani S. Harshavardhan , Thirumalai Venkatesan
发明人： Alberto Pique , Kolagani S. Harshavardhan , Thirumalai Venkatesan
IPC分类号： C30B23/02 , H01L39/24 , H01L39/02 , B05D5/12
CPC分类号： C30B23/02 , C30B29/22 , C30B29/225 , H01L39/2461 , Y10S428/93 , Y10S505/701 , Y10S505/729
摘要： A superconducting garnet thin film system (10) is provided for high frequency microwave applications where a single crystal high temperature superconducting (HTSC) layer (18) is integrated with a garnet substrate (12). A first perovskite compound buffer layer (14) is epitaxially grown on an upper surface of the garnet substrate layer (12) and defines a lattice constant less than the lattice constant of the garnet substrate layer (12) with the first perovskite layer being aligned in a cube on cube parallel orientation with respect to the garnet substrate layer (12). A second perovskite layer (16) is epitaxially grown on an upper surface of the first perovskite layer (14) at an orientation of 45.degree. to first layer (14) and defines a lattice constant less than the lattice constant of the first perovskite layer. The HTSC layer (18) is epitaxially grown on an upper surface of the second perovskite layer (16) in parallel aligned orientation and is lattice matched to the second perovskite compound layer (16) for incorporation of passive components within the high temperature superconducting layer (18) having high frequency microwave applications.
摘要翻译：提供了一种用于高频微波应用的超导石榴石薄膜系统（10），其中单晶高温超导（HTSC）层（18）与石榴石衬底（12）集成。第一钙钛矿化合物缓冲层（14）在石榴石基材层（12）的上表面外延生长，并且定义了小于石榴石基材层（12）的晶格常数的晶格常数，其中第一钙钛矿层被排列成相对于石榴石基材层（12）的立方体平行取向的立方体。第二钙钛矿层（16）在第一钙钛矿层（14）的上表面上以与第一层（14）成45°的取向外延生长，并且限定了小于第一钙钛矿层的晶格常数的晶格常数。 HTSC层（18）以平行排列的方向外延生长在第二钙钛矿层（16）的上表面上，并且与第二钙钛矿化合物层（16）晶格匹配，以将高分子超导层 18）具有高频微波应用。

9. 发明授权

US5458686A Pulsed laser passive filter deposition system 失效
标题翻译：脉冲激光无源滤波器沉积系统
公开(公告)号：US5458686A
公开(公告)日：1995-10-17
申请号：US398146
申请日：1995-03-03
申请人： Alberto Pique , Thirumalai Venkatesan , Steven Green
发明人： Alberto Pique , Thirumalai Venkatesan , Steven Green
IPC分类号： C23C14/04 , C23C14/28 , C23C14/00
CPC分类号： C23C14/28 , C23C14/044
摘要： This invention directs itself to a pulsed laser passive filter deposition system (10) which provides a blocking and transparent mask mechanism (34) placed between a target (14) and a substrate (12) to be coated. The blocking and transparent mask mechanism (34) includes a blocking member (36) which casts a blocking shadow having a greater cross-sectional area than the substrate (12), to block linearly travelling clustered species particulates (22) from impinging on the substrate (12). The blocking and transparent mask mechanism (34) also includes annularly shaped disk members (38 and 44) having openings (40 and 46) formed in a central portion to allow passage of the atomic species (20) of the composition being coated on the substrate (12) where the atomic species (20) is deflected by impingement with background gas molecules (26). In this manner, the substrate (12) is coated with the atomic species (20) in a uniform coating without having the clustered species (22) being coated on the substrate (12).
摘要翻译：本发明将其自身引导到脉冲激光无源滤波器沉积系统（10），其提供放置在待涂覆的靶（14）和基底（12）之间的阻挡和透明掩模机构（34）。阻挡和透明掩模机构（34）包括阻挡构件（36），其阻挡具有比衬底（12）更大的横截面面积的阻挡阴影，以阻挡线性移动的聚集物质微粒（22）撞击到衬底（12）。阻挡和透明掩模机构（34）还包括具有形成在中心部分中的开口（40和46）的环形盘状构件（38和44），以允许待涂覆的组合物的原子物质（20）通过基底（12）其中原子物质（20）通过与背景气体分子（26）的冲击而偏转。以这种方式，基板（12）以均匀的涂层涂覆有原子物质（20），而不会将聚集物质（22）涂覆在基底（12）上。

10. 发明授权

US07262597B2 Hybrid squid microscope with magnetic flux-guide for high resolution magnetic and current imaging by direct magnetic field sensing 失效
标题翻译：具有磁通量的混合鱿鱼显微镜，用于通过直接磁场感测进行高分辨率磁场和电流成像
公开(公告)号：US07262597B2
公开(公告)日：2007-08-28
申请号：US10940717
申请日：2004-09-15
申请人： Solomon I. Woods , Lee A. Knauss , Nesco M. Lettsome , Alfred B. Cawthorne , Thirumalai Venkatesan
发明人： Solomon I. Woods , Lee A. Knauss , Nesco M. Lettsome , Alfred B. Cawthorne , Thirumalai Venkatesan
IPC分类号： G01R33/035 , G01R33/12
CPC分类号： G01Q60/54 , G01Q70/02 , G01R33/0385 , Y10S505/845 , Y10S505/846
摘要： A scanning microscope for high resolution current imaging by direct magnetic field sensing of a sample maintained in an ambient environment. The scanning microscope uses a magnetic sensor such as a SQUID and a fiber probe magnetically coupled between the SQUID sensor and the sample under study. The fiber probe has a sharply defined tip for high resolution probing and for reaching minute cavities on the surface of the sample. The coupling between the tip of the fiber probe and the sample is controlled by a distance control mechanism, in the range of 1-100 nm. The material of the fiber probe with high permeability and low magnetic noise is chosen to optimize flux transmission to the magnetic sensor. Magnetic coupling to the sensor is maximized by keeping the distance between the end of the fiber probe and the sensor to approximately 0-100 μm. The fiber probe is integrated into the fiber holder for easy replacement of the fiber probe.
摘要翻译：一种扫描显微镜，用于通过直接磁场感测维持在周围环境中的样品进行高分辨率电流成像。扫描显微镜使用诸如SQUID的磁传感器和磁耦合在SQUID传感器和正在研究的样品之间的光纤探针。光纤探针具有尖锐的尖端，用于高分辨率探测，并且可以达到样品表面的微小空洞。光纤探针的尖端与样品之间的耦合由距离控制机构控制，范围为1-100nm。选择具有高磁导率和低磁噪声的光纤探头的材料，以优化磁传感器的磁通传递。通过将光纤探针的端部与传感器之间的距离保持在大约0-100 mum，使传感器的磁耦合最大化。光纤探头集成到光纤支架中，便于更换光纤探头。

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