专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100321138A1 SEPARATE TYPE MAGNETIC SHIELD APPARATUS 有权
标题翻译：分离型磁屏蔽装置
公开(公告)号：US20100321138A1
公开(公告)日：2010-12-23
申请号：US12521423
申请日：2007-12-27
申请人： Ichiro Sasada , Toshikazu Takeda
发明人： Ichiro Sasada , Toshikazu Takeda
IPC分类号： H05K9/00
CPC分类号： G01R33/025 , A61B5/0046 , A61B5/04005 , G01R33/0047 , H05K9/0075
摘要： It is an object of the present invention to provide a separate type magnetic shield apparatus which has high access performance to a magnetically shielded space, in which magnetic shielding is very effectively achieved. In the separate type magnetic shield apparatus, first and second conductors 10a and 10b extending in the longitudinal axial line direction are provided on a curved magnetic shield outer side wall 3 of a first magnetic shield side wall body 2A at up and down symmetrical positions relative to the longitudinal plane Hp passing through the longitudinal axial line of the cylindrical space S to cause current to flow therethrough; first and second conductors 10c and 10d extending in the longitudinal axial line direction, on the curved magnetic shield outer side wall 3 of the second magnetic shield side wall body 2B, at up and down symmetrical positions relative to the horizontal plane Hp passing through the longitudinal axial line of the cylindrical space S to cause current to flow therethrough; and magnetic fluxes H coming horizontally to the first magnetic shield side wall body 2A and to the second magnetic shield side wall body 2B are deflected up and down by means of magnetic fields produced around the first and second conductors 10a, 10b, 10c and 10d, thereby preventing magnetic fluxes from flowing into the cylindrical space S.
摘要翻译：本发明的目的是提供一种对磁屏蔽空间具有高访问性能的独立型磁屏蔽装置，其中非常有效地实现了磁屏蔽。在分体式磁屏蔽装置中，在纵向轴线方向上延伸的第一和第二导体10a和10b相对于第一磁屏蔽侧壁体2A的上下对称位置设置在第一磁屏蔽侧壁体2A的弯曲磁屏蔽外侧壁3上纵向平面Hp穿过圆柱形空间S的纵向轴线，以使电流流过其中; 在第二磁屏蔽侧壁体2B的弯曲磁屏蔽外侧壁3上沿纵向轴线方向延伸的第一和第二导体10c和10d相对于穿过纵向的水平面Hp在上下对称位置圆柱形空间S的轴线以使电流流过其中; 并且通过在第一和第二导体10a，10b，10c和10d周围产生的磁场，水平地到达第一磁屏蔽侧壁体2A和第二磁屏蔽侧壁体2B的磁通量H上下偏转，从而防止磁通量流入圆柱形空间S.

2. 发明授权

US08031039B2 Separate type magnetic shield apparatus 有权
标题翻译：分体式磁屏蔽装置
公开(公告)号：US08031039B2
公开(公告)日：2011-10-04
申请号：US12521423
申请日：2007-12-27
申请人： Ichiro Sasada , Toshikazu Takeda
发明人： Ichiro Sasada , Toshikazu Takeda
IPC分类号： H01F7/00 , H01F38/12 , H01F27/32 , H05K9/00
CPC分类号： G01R33/025 , A61B5/0046 , A61B5/04005 , G01R33/0047 , H05K9/0075
摘要： It is an object of the present invention to provide a separate type magnetic shield apparatus which has high access performance to a magnetically shielded space, in which magnetic shielding is very effectively achieved. In the separate type magnetic shield apparatus, first and second conductors 10a and 10b extending in the longitudinal axial line direction are provided on a curved magnetic shield outer side wall 3 of a first magnetic shield side wall body 2A at up and down symmetrical positions relative to the longitudinal plane Hp passing through the longitudinal axial line of the cylindrical space S to cause current to flow therethrough; first and second conductors 10c and 10d extending in the longitudinal axial line direction, on the curved magnetic shield outer side wall 3 of the second magnetic shield side wall body 2B, at up and down symmetrical positions relative to the horizontal plane Hp passing through the longitudinal axial line of the cylindrical space S to cause current to flow therethrough; and magnetic fluxes H coming horizontally to the first magnetic shield side wall body 2A and to the second magnetic shield side wall body 2B are deflected up and down by means of magnetic fields produced around the first and second conductors 10a, 10b, 10c and 10d, thereby preventing magnetic fluxes from flowing into the cylindrical space S.
摘要翻译：本发明的目的是提供一种对磁屏蔽空间具有高访问性能的独立型磁屏蔽装置，其中非常有效地实现了磁屏蔽。在分体式磁屏蔽装置中，在纵向轴线方向上延伸的第一和第二导体10a和10b相对于第一磁屏蔽侧壁体2A的上下对称位置设置在第一磁屏蔽侧壁体2A的弯曲磁屏蔽外侧壁3上纵向平面Hp穿过圆柱形空间S的纵向轴线，以使电流流过其中; 在第二磁屏蔽侧壁体2B的弯曲磁屏蔽外侧壁3上沿纵向轴线方向延伸的第一和第二导体10c和10d相对于穿过纵向的水平面Hp上下对称的位置圆柱形空间S的轴线以使电流流过其中; 并且通过在第一和第二导体10a，10b，10c和10d周围产生的磁场，水平地到达第一磁屏蔽侧壁体2A和第二磁屏蔽侧壁体2B的磁通量H上下偏转，从而防止磁通量流入圆柱形空间S.

3. 发明授权

US08315037B2 Dielectric ceramic and laminated ceramic capacitor 有权
标题翻译：介质陶瓷和层压陶瓷电容器
公开(公告)号：US08315037B2
公开(公告)日：2012-11-20
申请号：US12690331
申请日：2010-01-20
申请人： Masanori Nakamura , Shinichi Yamaguchi , Toshikazu Takeda
发明人： Masanori Nakamura , Shinichi Yamaguchi , Toshikazu Takeda
IPC分类号： H01G4/06 , C04B35/00
CPC分类号： H01G4/1227 , C04B35/03 , C04B35/468 , C04B35/50 , H01G4/30
摘要： A dielectric ceramic which improves the lifetime characteristics and dielectric breakdown voltage of a laminated ceramic capacitor includes core-shell crystalline grains which have a core-shell structure and homogeneous crystalline grains which have a homogeneous structure. In this dielectric ceramic, the core-shell crystalline grains and the homogeneous crystalline grains are present at an area ratio in the range of 91:9 to 99:1. Preferably, when the mean grain size for the core-shell crystalline grains is represented by R1 and the mean grain size for the homogeneous crystalline grains is represented by R2, the ratio of R2/R1 is 0.8 or more and 3 or less.
摘要翻译：提高叠层陶瓷电容器的寿命特性和介电击穿电压的电介质陶瓷包括具有核 - 壳结构的核 - 壳晶粒和具有均匀结构的均匀晶粒。在该电介质陶瓷中，核 - 壳晶粒和均匀晶粒以91:9至99:1的面积比存在。优选地，当核 - 壳晶粒的平均晶粒尺寸由R1表示，并且均匀晶粒的平均晶粒尺寸由R2表示时，R2 / R1的比例为0.8以上且3以下。

4. 发明授权

US08213153B2 Dielectric ceramic and laminated ceramic capacitor 有权
标题翻译：介质陶瓷和层压陶瓷电容器
公开(公告)号：US08213153B2
公开(公告)日：2012-07-03
申请号：US12695548
申请日：2010-01-28
申请人： Megumi Morita , Shoichiro Suzuki , Toshikazu Takeda , Tomomi Koga
发明人： Megumi Morita , Shoichiro Suzuki , Toshikazu Takeda , Tomomi Koga
IPC分类号： H01G4/06
CPC分类号： H01G4/30 , C04B35/453 , C04B35/468 , H01G4/1227
摘要： A dielectric ceramic with stable insulation properties even after calcination under a reducing atmosphere, as is preferred for a laminated ceramic capacitor, is a CaTiO3 composition containing Sn. It is preferable for the dielectric ceramic to contain, as its main component, (Ca1-xBaxSny)TiO3 (0≦x
摘要翻译：即使在还原气氛下煅烧之后，如层压陶瓷电容器最好也是具有稳定绝缘性能的电介质陶瓷，是包含Sn的CaTiO3组合物。介电陶瓷优选以B位置上的Sn溶液作为其主要成分（Ca1-xBaxSny）TiO3（0＆nlE; x <0.2,0.01＆nlE; y <0.2）。

5. 发明授权

US07727921B2 Dielectric ceramic composition and monolithic ceramic capacitor 有权
标题翻译：介电陶瓷组合物和单片陶瓷电容器
公开(公告)号：US07727921B2
公开(公告)日：2010-06-01
申请号：US12540824
申请日：2009-08-13
申请人： Toshikazu Takeda
发明人： Toshikazu Takeda
IPC分类号： C04B35/495 , H01G4/12
CPC分类号： H01B3/12 , C04B35/495 , C04B35/62685 , C04B2235/3201 , C04B2235/3203 , C04B2235/3206 , C04B2235/3213 , C04B2235/3224 , C04B2235/3225 , C04B2235/3227 , C04B2235/3239 , C04B2235/3241 , C04B2235/3244 , C04B2235/3251 , C04B2235/3255 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3284 , C04B2235/3418 , C04B2235/652 , C04B2235/6582 , C04B2235/6584 , C04B2235/6588 , C04B2235/768 , H01G4/1254 , H01G4/30
摘要： A dielectric ceramic composition that is used for a monolithic ceramic capacitor, can be cofired with internal electrodes mainly composed of Ni at a temperature of 1200° C. or less, and has a high resistivity is provided. The dielectric ceramic composition is mainly composed of a tungsten bronze type complex oxide having a composition formula of (K1-xNax)Sr2Nb5O15 (wherein 0≦x
摘要翻译：用于单片陶瓷电容器的电介质陶瓷组合物可以与主要由Ni组成的内部电极在1200℃或更低的温度下共烧，并且具有高电阻率。电介质陶瓷组合物主要由组成式为（K1-xNax）Sr2Nb5O15（其中0＆nlE; x <0.2）的钨青铜型复合氧化物组成，并且还含有0.05〜20摩尔份的R（其中 R是选自Y，La，Pr，Nd，Sm，Eu，Gd，Tb，Dy，Ho，Er，Tm，Yb和Lu中的至少一种）和0.05〜40摩尔份的M M为选自Mn，V，Li，Si，Ni，Cr，Co，Fe，Zn，Mg和Zr中的至少一种）。

6. 发明申请

US20100195266A1 DIELECTRIC CERAMIC AND LAMINATED CERAMIC CAPACITOR 有权
标题翻译：电介质陶瓷和层压陶瓷电容器
公开(公告)号：US20100195266A1
公开(公告)日：2010-08-05
申请号：US12695548
申请日：2010-01-28
申请人： Megumi MORITA , Shoichiro Suzuki , Toshikazu Takeda , Tomomi Koga
发明人： Megumi MORITA , Shoichiro Suzuki , Toshikazu Takeda , Tomomi Koga
IPC分类号： H01G4/06 , C04B35/468 , C04B35/453
CPC分类号： H01G4/30 , C04B35/453 , C04B35/468 , H01G4/1227
摘要： A dielectric ceramic with stable insulation properties even after calcination under a reducing atmosphere, as is preferred for a laminated ceramic capacitor, is a CaTiO3 composition containing Sn. It is preferable for the dielectric ceramic to contain, as its main component, (Ca1-xBaxSny)TiO3 (0≦x
摘要翻译：即使在还原气氛下煅烧之后，如层压陶瓷电容器最好也是具有稳定绝缘性能的电介质陶瓷，是包含Sn的CaTiO3组合物。介电陶瓷优选以B位置上的Sn溶液作为其主要成分（Ca1-xBaxSny）TiO3（0＆nlE; x <0.2,0.01＆nlE; y <0.2）。

7. 发明授权

US07742278B2 Dielectric ceramic composition and laminated ceramic capacitor 有权
标题翻译：介电陶瓷组合物和层压陶瓷电容器
公开(公告)号：US07742278B2
公开(公告)日：2010-06-22
申请号：US12635218
申请日：2009-12-10
申请人： Toshikazu Takeda
发明人： Toshikazu Takeda
IPC分类号： H01G4/06
CPC分类号： H01B3/12 , C04B35/4682 , C04B35/495 , C04B2235/3201 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3236 , C04B2235/3239 , C04B2235/3241 , C04B2235/3251 , C04B2235/3255 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3284 , C04B2235/3418 , C04B2235/6025 , C04B2235/656 , C04B2235/6582 , C04B2235/6584 , C04B2235/6588 , H01G4/1227 , H01G4/30
摘要： There is provided a dielectric ceramic composition that is a dielectric ceramic material used for a laminated ceramic capacitor; that can be co-fired with internal electrodes mainly composed of Ni at a temperature of 1300° C. or less; and that has a high dielectric constant, good temperature characteristics of capacitance in a range of −55 to 175° C., and a high resistivity ρ at 175° C. The dielectric ceramic composition includes a main component represented by a composition formula (1-a) (K1-xNax)(Sr1-y-zBayCaz)2Nb5O15-a(Ba1-bCab)TiO3 (where a, b, x, y, and z are all molar amounts and 0.3≦a≦0.8, 0≦b≦0.2, 0≦x
摘要翻译：提供了一种介电陶瓷组合物，其是用于层压陶瓷电容器的电介质陶瓷材料; 可以在1300℃以下的温度下由主要由Ni组成的内部电极共烧，并且具有高介电常数，在-55至175℃的范围内具有良好的电容温度特性，以及高电阻率＆rgr; 电介质陶瓷组合物包括由组成式（1-a）（K1-xNax）（Sr1-y-zBayCaz）2Nb5O15-a（Ba1-bCab）TiO3表示的主要成分（其中a，b， x，y和z分别是摩尔量和0.3≤nlE; a＆nlE; 0.8,0和nlE; b＆nlE; 0.2,0和nlE; x <0.2,0.1和nlE; y和nlE; 0.5,0.1和nlE; z和nlE; 0.5和0.2＆ z＆nlE; 0.7）; 和M作为附加组分，相对于主成分（其中M为V，Mn，Cr，Fe，Co中的至少一种元素）相对于100份摩尔为0.1〜40份摩尔， Ni，Zn，Mg和Si）。

8. 发明申请

US20080045399A1 DIELECTRIC CERAMIC COMPOSITION AND MONOLITHIC CERAMIC CAPACITOR 有权
标题翻译：电介质陶瓷组合物和单晶陶瓷电容器
公开(公告)号：US20080045399A1
公开(公告)日：2008-02-21
申请号：US11873973
申请日：2007-10-17
申请人： Toshikazu Takeda , Nobuyuki Wada , Yukako Takahashi
发明人： Toshikazu Takeda , Nobuyuki Wada , Yukako Takahashi
IPC分类号： C04B35/495
CPC分类号： C04B35/495 , B32B2311/08 , C04B35/62665 , C04B35/64 , C04B2235/3201 , C04B2235/3206 , C04B2235/3208 , C04B2235/3213 , C04B2235/3215 , C04B2235/3241 , C04B2235/3251 , C04B2235/3262 , C04B2235/3272 , C04B2235/3275 , C04B2235/3279 , C04B2235/3418 , C04B2235/365 , C04B2235/6025 , C04B2235/656 , C04B2235/6582 , C04B2235/6584 , C04B2235/6588 , C04B2235/663 , C04B2235/76 , C04B2235/96 , C04B2237/345 , C04B2237/408 , H01G4/1254 , H01G4/30
摘要： A dielectric ceramic composition of the present invention contains, as a main component, a tungsten-bronze-type composite oxide represented by a composition formula (K1-yNay)Sr2Nb5O15 (wherein 0≦y
摘要翻译：本发明的电介质陶瓷组合物以组成式（K 1-y Na y）表示的钨青铜型复合氧化物作为主要成分， Sr 2 Nb 5 O 15（其中0 <= y <0.2），作为辅助成分，Mn的含量范围相对于100份（摩尔）主成分为0.1〜40份摩尔。

9. 发明授权

US5494711A Method of preparing InSb thin film 失效
标题翻译：制备InSb薄膜的方法
公开(公告)号：US5494711A
公开(公告)日：1996-02-27
申请号：US180127
申请日：1994-01-11
申请人： Toshikazu Takeda , Yoshifumi Ogiso , Takuji Nakagawa , Atsuo Senda
发明人： Toshikazu Takeda , Yoshifumi Ogiso , Takuji Nakagawa , Atsuo Senda
IPC分类号： H01L43/12 , C23C14/02 , C23C14/06 , H01L21/203 , H01L31/18 , H01L43/14 , B05D1/04 , B05D1/36 , B06B1/00 , H05C1/00
CPC分类号： C23C14/0617 , C23C14/02 , H01L31/1852 , Y02E10/544 , Y02P70/521
摘要： Disclosed herein is a method of preparing an InSb thin film, which comprises a step of physically sticking InSb powder onto a major surface of a substrate, and a step of depositing an InSb thin film on the major surface of the substrate provided with the as-stuck InSb powder by a method such as vacuum evaporation.
摘要翻译：本文公开了一种制备InSb薄膜的方法，该方法包括将InSb粉末物理地粘附在基材的主表面上的步骤，以及将InSb薄膜沉积在基片的主表面上的步骤，通过真空蒸发等方法对InSb粉末进行吸附。

10. 发明授权

US08248753B2 Dielectric ceramic and laminated ceramic capacitor 有权
标题翻译：介质陶瓷和层压陶瓷电容器
公开(公告)号：US08248753B2
公开(公告)日：2012-08-21
申请号：US12645985
申请日：2009-12-23
申请人： Shoichiro Suzuki , Toshikazu Takeda
发明人： Shoichiro Suzuki , Toshikazu Takeda
IPC分类号： H01G4/20 , H01G4/06 , C04B35/00
CPC分类号： C04B35/47 , B32B18/00 , C01G23/002 , C01P2002/52 , C01P2006/40 , C04B35/6268 , C04B2235/3208 , C04B2235/3215 , C04B2235/3239 , C04B2235/3262 , C04B2235/3293 , C04B2235/3418 , C04B2235/6025 , C04B2235/656 , C04B2235/6582 , C04B2235/6584 , C04B2235/6588 , C04B2235/768 , C04B2237/346 , H01G4/1227 , H01G4/30
摘要： A dielectric ceramic for use in dielectric ceramic layers has a main component represented by a composition formula of (Sr1-x-ySnxBay)TiO3, wherein x is 0.005≦x≦0.24, y is 0≦y≦0.25 in the composition formula. Preferably, the dielectric ceramic includes 0.01 mol to 5 mol of M (M is at least one of Mn and V) calculated as MO and/or 0.2 mol to 5 mol of Si calculated as SiO2, with respect to 100 mols of the main component, and more preferably, further includes 0.1 mol to 25 mol of Ca calculated as CaO with respect to 100 mols of the main component. The dielectric ceramic has an increased dielectric constant permitting size reduction when used in a laminated ceramic capacitor.
摘要翻译：用于介电陶瓷层的电介质陶瓷具有由组成式（Sr1-x-ySnxBay）TiO3表示的主要成分，其中x为0.005≤n1E; x和nlE; 0.24，y为0和n1E; y和nlE; 0.25。优选地，电介质陶瓷包括以MO计算的0.01mol至5mol的M（M为至少一种Mn和V）和/或以SiO 2计为0.2mol至5mol的Si，相对于主组分更优选为0.1摩尔〜25摩尔的Ca，相对于100摩尔的主成分为CaO计算。当用于层叠陶瓷电容器时，介电陶瓷具有允许尺寸减小的介电常数增加。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式