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1. 发明授权

US07460320B2 Driving system and optical-element driving system 有权
标题翻译：驱动系统和光学元件驱动系统
公开(公告)号：US07460320B2
公开(公告)日：2008-12-02
申请号：US11374193
申请日：2006-03-14
申请人： Ichiro Onuki , Makoto Sasaki , Keita Misawa , Makoto Mizuno
发明人： Ichiro Onuki , Makoto Sasaki , Keita Misawa , Makoto Mizuno
IPC分类号： G02B7/02
CPC分类号： G03F7/70825
摘要： A driving system for driving an optical element in a first direction. The system includes a linear actuator for producing a displacement in a second direction perpendicular to the first direction, a displacement picking unit being extendable in a third second direction, perpendicular to both of the first and second directions, for picking out a displacement of the linear actuator, and a direction converting unit, disposed at the third-direction second-direction side of the linear actuator, for converting a direction of the displacement picked out by the displacement picking unit into a third direction, perpendicular to both the first and second directions.
摘要翻译：一种用于沿第一方向驱动光学元件的驱动系统。该系统包括用于在垂直于第一方向的第二方向上产生位移的线性致动器，位移拾取单元可沿垂直于第一和第二方向两者的第三方向延伸，用于拾取线性位移致动器和方向转换单元，设置在线性致动器的第三方向第二方向侧，用于将由位移拾取单元拾取的位移的方向转换成垂直于第一和第二方向的第三方向。

2. 发明申请

US20090040632A1 Driving System and Optical-Element Driving System 有权
标题翻译：驱动系统和光元件驱动系统
公开(公告)号：US20090040632A1
公开(公告)日：2009-02-12
申请号：US12208443
申请日：2008-09-11
申请人： Ichiro Onuki , Makoto Sasaki , Keita Misawa , Makoto Mizuno
发明人： Ichiro Onuki , Makoto Sasaki , Keita Misawa , Makoto Mizuno
IPC分类号： G02B7/02
CPC分类号： G03F7/70825
摘要： A driving system for driving an optical element in a first direction includes a linear actuator for producing a displacement in a second direction perpendicular to the first direction, a displacement picking unit being extendable in a third direction, perpendicular to both of the first and second directions, for picking out a displacement of the linear actuator, and a direction converting unit disposed at the third-direction side of the linear actuator, for converting a direction of the displacement picked out by the displacement picking unit.
摘要翻译：用于在第一方向上驱动光学元件的驱动系统包括用于在与第一方向垂直的第二方向上产生位移的线性致动器，位移拾取单元可沿第三方向延伸，垂直于第一和第二方向，用于拾取线性致动器的位移，以及设置在线性致动器的第三方侧的方向转换单元，用于转换由位移拾取单元拾取的位移方向。

3. 发明授权

US07684136B2 Driving system and optical-element driving system 有权
标题翻译：驱动系统和光学元件驱动系统
公开(公告)号：US07684136B2
公开(公告)日：2010-03-23
申请号：US12208443
申请日：2008-09-11
申请人： Ichiro Onuki , Makoto Sasaki , Keita Misawa , Makoto Mizuno
发明人： Ichiro Onuki , Makoto Sasaki , Keita Misawa , Makoto Mizuno
IPC分类号： G02B7/02
CPC分类号： G03F7/70825
摘要： A driving system for driving an optical element in a first direction includes a linear actuator for producing a displacement in a second direction perpendicular to the first direction, a displacement picking unit being extendable in a third direction, perpendicular to both of the first and second directions, for picking out a displacement of the linear actuator, and a direction converting unit disposed at the third-direction side of the linear actuator, for converting a direction of the displacement picked out by the displacement picking unit.
摘要翻译：用于在第一方向上驱动光学元件的驱动系统包括用于在与第一方向垂直的第二方向上产生位移的线性致动器，位移拾取单元可沿第三方向延伸，垂直于第一和第二方向，用于拾取线性致动器的位移，以及设置在线性致动器的第三方侧的方向转换单元，用于转换由位移拾取单元拾取的位移方向。

4. 发明申请

US20060209436A1 Driving system and optical-element driving system 有权
标题翻译：驱动系统和光学元件驱动系统
公开(公告)号：US20060209436A1
公开(公告)日：2006-09-21
申请号：US11374193
申请日：2006-03-14
申请人： Ichiro Onuki , Makoto Sasaki , Keita Misawa , Makoto Mizuno
发明人： Ichiro Onuki , Makoto Sasaki , Keita Misawa , Makoto Mizuno
IPC分类号： G03C5/00 , G02B7/02
CPC分类号： G03F7/70825
摘要： Disclosed is a driving system for driving an optical element in a first direction, that includes a linear actuator for producing a displacement in a second direction perpendicular to the first direction, a displacement picking unit being extendable in a third direction, perpendicular to both of the first and second directions, for picking out a displacement of the linear actuator, and a direction converting unit disposed at the third-direction side of the linear actuator, for converting a direction of the displacement picked out by the displacement picking unit.
摘要翻译：公开了一种用于沿第一方向驱动光学元件的驱动系统，其包括用于在与第一方向垂直的第二方向上产生位移的线性致动器，位移拾取单元可沿第三方向延伸，垂直于两者用于拾取线性致动器的位移的第一和第二方向;以及设置在线性致动器的第三方侧的方向转换单元，用于转换由位移拾取单元拾取的位移的方向。

5. 发明授权

US07859773B2 Driving mechanism and optical element driving apparatus 有权
标题翻译：驱动机构和光学元件驱动装置
公开(公告)号：US07859773B2
公开(公告)日：2010-12-28
申请号：US12029539
申请日：2008-02-12
申请人： Makoto Mizuno , Ichiro Onuki
发明人： Makoto Mizuno , Ichiro Onuki
IPC分类号： G02B7/02
CPC分类号： G02B7/023 , G02B7/005 , G03F7/70258 , G03F7/70825
摘要： An optical-element driving mechanism is configured to drive an optical element, and includes a uniaxial driving mechanism that includes a linear actuator that drives in a first direction, and a link mechanism that converts a displacement in a direction orthogonal to the first direction. The linear actuator is level with the link mechanism in an optical-axis direction. The uniaxial driving mechanism is arranged in order of the link mechanism and the linear actuator in a radial direction when viewed form an optical axis of the optical element.
摘要翻译：光学元件驱动机构被配置为驱动光学元件，并且包括单轴驱动机构，该单轴驱动机构包括沿第一方向驱动的线性致动器和连接机构，该连杆机构转换与第一方向正交的方向的位移。线性致动器与链接机构在光轴方向上平齐。当从光学元件的光轴观察时，单轴驱动机构按照连杆机构和线性致动器的径向方向排列。

6. 发明申请

US20080204905A1 DRIVING MECHANISM AND OPTICAL ELEMENT DRIVING APPARATUS 有权
标题翻译：驱动机构和光学元件驱动装置
公开(公告)号：US20080204905A1
公开(公告)日：2008-08-28
申请号：US12029539
申请日：2008-02-12
申请人： Makoto Mizuno , Ichiro Onuki
发明人： Makoto Mizuno , Ichiro Onuki
IPC分类号： G02B7/04
CPC分类号： G02B7/023 , G02B7/005 , G03F7/70258 , G03F7/70825
摘要： An optical-element driving mechanism is configured to drive an optical element, and includes a uniaxial driving mechanism that includes a linear actuator that drives in a first direction, and a link mechanism that converts a displacement in a direction orthogonal to the first direction. The linear actuator is level with the link mechanism in an optical-axis direction. The uniaxial driving mechanism is arranged in order of the link mechanism and the linear actuator in a radial direction when viewed form an optical axis of the optical element.
摘要翻译：光学元件驱动机构被配置为驱动光学元件，并且包括单轴驱动机构，该单轴驱动机构包括沿第一方向驱动的线性致动器和连接机构，该连杆机构转换与第一方向正交的方向的位移。线性致动器与链接机构在光轴方向上平齐。当从光学元件的光轴观察时，单轴驱动机构按照连杆机构和线性致动器的径向方向排列。

7. 发明授权

US08476138B2 Semiconductor memory device and a method of manufacturing the same, a method of manufacturing a vertical MISFET and a vertical MISFET, and a method of manufacturing a semiconductor device and a semiconductor device 失效
公开(公告)号：US08476138B2
公开(公告)日：2013-07-02
申请号：US13150768
申请日：2011-06-01
申请人： Hiraku Chakihara , Kousuke Okuyama , Masahiro Moniwa , Makoto Mizuno , Keiji Okamoto , Mitsuhiro Noguchi , Tadanori Yoshida , Yasuhiko Takahshi , Akio Nishida
发明人： Hiraku Chakihara , Kousuke Okuyama , Masahiro Moniwa , Makoto Mizuno , Keiji Okamoto , Mitsuhiro Noguchi , Tadanori Yoshida , Yasuhiko Takahshi , Akio Nishida
IPC分类号： H01L21/336 , H01L21/8244 , H01L21/8239
CPC分类号： H01L29/6675 , H01L21/823885 , H01L27/105 , H01L27/11 , H01L27/1104 , H01L27/1116 , H01L29/7833 , H01L29/78642
摘要： Vertical MISFETs are formed over drive MISFETs and transfer MISFETs. The vertical MISFETs comprise rectangular pillar laminated bodies each formed by laminating a lower semiconductor layer (drain), an intermediate semiconductor layer, and an upper semiconductor layer (source), and gate electrodes formed on corresponding side walls of the laminated bodies with gate insulating films interposed therebetween. In each vertical MISFET, the lower semiconductor layer constitutes a drain, the intermediate semiconductor layer constitutes a substrate (channel region), and the upper semiconductor layer constitutes a source. The lower semiconductor layer, the intermediate semiconductor layer and the upper semiconductor layer are each comprised of a silicon film. The lower semiconductor layer and the upper semiconductor layer are doped with a p type and constituted of a p type silicon film.

8. 发明授权

US08174901B2 Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路器件
公开(公告)号：US08174901B2
公开(公告)日：2012-05-08
申请号：US12721553
申请日：2010-03-10
申请人： Ken Matsubara , Hideo Kasai , Kenji Kawada , Makoto Mizuno
发明人： Ken Matsubara , Hideo Kasai , Kenji Kawada , Makoto Mizuno
IPC分类号： G11C11/34
CPC分类号： G11C7/02 , G11C16/06 , G11C16/32 , G11C16/3418
摘要： This invention is to reduce the number of memory gate drivers, while lessening the number of times of disturb occurrence in a memory array configuration that implements writing in small byte units. A memory array comprises a plurality of sub-arrays, MG transfers, SL drivers, and CG drivers. Each sub-array includes a plurality of memory gate lines, control gate lines, source lines, and bit lines. Memory cells are arranged in positions of intersections of these lines. The control gate lines, CG drivers, source lines, and SL drivers are common to the sub-arrays, whereas the memory gate lines and MG buffer circuits are provided for each sub-array. Thereby, the units in which data is written are decreased and adverse effects of disturb are reduced without increasing the circuit size of the memory array.
摘要翻译：本发明是减少存储器栅极驱动器的数量，同时减少以小字节为单位实现写入的存储器阵列配置中的干扰发生次数。存储器阵列包括多个子阵列，MG传输，SL驱动器和CG驱动器。每个子阵列包括多个存储器栅极线，控制栅极线，源极线和位线。存储单元布置在这些线的相交位置。控制栅极线，CG驱动器，源极线和SL驱动器对于子阵列是共同的，而为每个子阵列提供存储器栅极线和MG缓冲电路。因此，数据写入的单元减少，并且不增加存储器阵列的电路尺寸的同时降低了干扰的不利影响。

9. 发明申请

US20110208904A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20110208904A1
公开(公告)日：2011-08-25
申请号：US13099720
申请日：2011-05-03
申请人： Masamichi Fujito , Makoto Mizuno , Takahiro Yokoyama , Kenji Kawada , Takashi Iwase , Yasunobu Aoki , Takashi Kurafuji , Tomohiro Uchiyama , Shuichi Sato , Yuji Uji
发明人： Masamichi Fujito , Makoto Mizuno , Takahiro Yokoyama , Kenji Kawada , Takashi Iwase , Yasunobu Aoki , Takashi Kurafuji , Tomohiro Uchiyama , Shuichi Sato , Yuji Uji
IPC分类号： G06F12/00
CPC分类号： G11C7/04 , G11C16/0441 , G11C16/10 , G11C16/28
摘要： The semiconductor device includes a nonvolatile memory, having a memory array containing 1-bit twin cells, each composed of electrically rewritable first and second storage devices, the first and second storage devices holding binary data according to difference of their threshold voltages, and having different retention characteristics depending on difference of the binary data thereof; a read circuit for differentially amplifying complementary data output from the first and second storage devices of the twin cell selected for read, and judging information stored in the twin cell; and a control circuit. Two memory cells constituting a twin cell are arranged to hold different data. Therefore, even when the retention performance of one memory cell deteriorates, the difference between data held by the two memory cells can be maintained. Hence, differential amplification of such difference enables acquisition of proper stored information. Thus, retention performance of an electrically rewritable nonvolatile memory cell is improved.
摘要翻译：半导体器件包括非易失性存储器，具有包含1比特双胞格的存储器阵列，每个存储器阵列由电可重写的第一和第二存储器件组成，第一和第二存储器件根据其阈值电压的差异保持二进制数据，并且具有不同的保留特性取决于其二进制数据的差异; 用于差分放大从被选择读取的双胞胎的第一和第二存储装置输出的互补数据的读取电路，以及判断存储在双胞胎中的信息; 和控制电路。布置构成双胞胎的两个存储单元以保存不同的数据。因此，即使一个存储单元的保持性能劣化，也能够维持由两个存储单元保持的数据之间的差异。因此，这种差异的差分放大使得能够获得正确的存储信息。因此，提高了电可重写非易失性存储单元的保持性能。

10. 发明申请

US20100202205A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100202205A1
公开(公告)日：2010-08-12
申请号：US12764090
申请日：2010-04-20
申请人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
发明人： Fumitoshi Ito , Yoshiyuki Kawashima , Takeshi Sakai , Yasushi Ishii , Yasuhiro Kanamaru , Takashi Hashimoto , Makoto Mizuno , Kousuke Okuyama , Yukiko Manabe
IPC分类号： G11C16/04 , H01L29/792
CPC分类号： H01L27/11568 , G11C16/0466 , H01L21/28282 , H01L27/115 , H01L29/42344 , H01L29/66833 , H01L29/792
摘要： The degree of integration and the number of rewriting of a semiconductor device having a nonvolatile memory element are improved. A first MONOS nonvolatile-memory-element and a second MONOS nonvolatile-memory-element having a large gate width compared with the first MONOS nonvolatile-memory-element are mounted together on the same substrate, and the first MONOS nonvolatile-memory-element is used for storing program data which is scarcely rewritten, and the second MONOS nonvolatile-memory-element is used for storing processed data which is frequently rewritten.
摘要翻译：改善了具有非易失性存储元件的半导体器件的积分度和重写次数。与第一MONOS非易失性存储元件相比，具有大门宽度的第一MONOS非易失性存储元件和第二MONOS非易失性存储元件一起安装在同一衬底上，并且第一MONOS非易失性存储元件是用于存储几乎不被重写的程序数据，并且第二MONOS非易失性存储元件用于存储频繁重写的处理数据。

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