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1. 发明申请

US20130081694A1 POLYCRYSTALLINE-TYPE SOLAR CELL PANEL AND PROCESS FOR PRODUCTION THEREOF 有权
标题翻译：多晶型太阳能电池板及其制造方法
公开(公告)号：US20130081694A1
公开(公告)日：2013-04-04
申请号：US13635962
申请日：2011-06-17
申请人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Chido , Nobuyuki Kamikihara , Tomohiro Okumura
发明人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Chido , Nobuyuki Kamikihara , Tomohiro Okumura
IPC分类号： H01L31/18 , H01L31/0368
CPC分类号： H01L31/182 , H01L31/03682 , Y02E10/546 , Y02P70/521
摘要： Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.
摘要翻译：公开了通过以简单的方式形成具有PN结的多晶硅膜，可以以低成本生产的多晶硅系太阳能电池。具体地，通过使用含掺杂剂的硅靶溅射制造的非晶硅膜通过等离子体多晶化，并且在非晶硅膜中形成PN结，从而制造具有PN结的多晶硅膜。具有PN结的多晶硅膜用作多晶硅太阳能电池的硅衬底。还公开了一种从硅锭生产含掺杂剂的硅靶的技术。

2. 发明授权

US09105803B2 Polycrystalline-type solar cell panel and process for production thereof 有权
标题翻译：多晶型太阳能电池板及其制造方法
公开(公告)号：US09105803B2
公开(公告)日：2015-08-11
申请号：US13635962
申请日：2011-06-17
申请人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ohido , Nobuyuki Kamikihara , Tomohiro Okumura
发明人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ohido , Nobuyuki Kamikihara , Tomohiro Okumura
IPC分类号： H01L31/18 , H01L31/0368
CPC分类号： H01L31/182 , H01L31/03682 , Y02E10/546 , Y02P70/521
摘要： Disclosed is a polycrystalline-type silicon solar cell which can be produced at low cost by forming a polycrystalline silicon film having a PN junction in a simple manner. Specifically, an amorphous silicon film produced by sputtering using a dopant-containing silicon target is polycrystallized with plasma, and a PN junction is formed in the amorphous silicon film, thereby producing a polycrystalline silicon film having a PN junction. The polycrystalline silicon film having a PN junction is used as a silicon substrate for a polycrystalline-type silicon solar cell. Also disclosed is a technique for producing a dopant-containing silicon target from a silicon ingot.
摘要翻译：公开了通过以简单的方式形成具有PN结的多晶硅膜，可以以低成本生产的多晶硅系太阳能电池。具体地，通过使用含掺杂剂的硅靶溅射制造的非晶硅膜通过等离子体多晶化，并且在非晶硅膜中形成PN结，从而制造具有PN结的多晶硅膜。具有PN结的多晶硅膜用作多晶硅太阳能电池的硅衬底。还公开了一种从硅锭生产含掺杂剂的硅靶的技术。

3. 发明申请

US20120227808A1 PROCESS FOR PRODUCTION OF SILICON POWDER, MULTI-CRYSTAL-TYPE SOLAR CELL PANEL, AND PROCESS FOR PRODUCTION OF THE SOLAR CELL PANEL 审中-公开
标题翻译：硅粉，多晶型太阳能电池板的制造方法以及太阳能电池板的制造方法
公开(公告)号：US20120227808A1
公开(公告)日：2012-09-13
申请号：US13503066
申请日：2010-10-19
申请人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ooido , Nobuyuki Kamikihara , Tomohiro Okumura
发明人： Ichiro Nakayama , Hitoshi Yamanishi , Yoshihisa Ooido , Nobuyuki Kamikihara , Tomohiro Okumura
IPC分类号： H01L31/0368 , B02C19/00
CPC分类号： C01B33/02 , C01B33/037 , H01L31/1804 , H01L31/1872 , Y02E10/547 , Y02P70/521
摘要： Disclosed is a process for producing a silicon powder, which comprises the steps of: powderizing a silicon ingot having a grade of 99.999% or more into a crude silicon powder having a particle diameter of 3 mm or less by means of high-pressure purified-water cutting; and reducing the crude silicon powder into a silicon powder having a particle diameter ranging from 0.01 to 10 [mu]m inclusive by means of at least one method selected from jet milling, wet granulation, ultrasonic wave disruption and shock wave disruption. The process is a technique for producing a silicon powder rapidly from a silicon ingot without reducing purity.
摘要翻译：公开了一种硅粉的制造方法，其特征在于，包括以下步骤：将具有99.999％以上等级的硅锭粉末通过高压纯化粉末粉碎至粒径为3mm以下的粗硅粉末中，水切割并且通过至少一种选自喷射研磨，湿法制粒，超声波破碎和冲击波破碎的方法将粗硅粉减少到粒径范围为0.01至10μm的硅粉末。该方法是从硅锭快速生产硅粉而不降低纯度的技术。

4. 发明申请

US20120325777A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20120325777A1
公开(公告)日：2012-12-27
申请号：US13582557
申请日：2011-05-11
申请人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
发明人： Tomohiro Okumura , Ichiro Nakayama , Mitsuo Saitoh
IPC分类号： H01L21/465 , B44C1/22 , C23C16/50
CPC分类号： H05H1/30 , H01J37/3211 , H01J37/32376 , H01J37/32825 , H01L21/324
摘要： A base material is placed on a base material placement face of a base material placement table. An inductively coupled plasma torch unit is structured with a cylindrical chamber structured with a cylinder made of an insulating material and provided with a rectangular slit-like plasma jet port, and lids closing opposing ends of the cylinder, a gas jet port that supplies gas into the cylindrical chamber, and a solenoid coil that generates a high frequency electromagnetic field in the cylindrical chamber. By a high frequency power supply supplying a high frequency power to the solenoid coil, plasma is generated in the cylindrical chamber, and the plasma is emitted from the plasma jet port to the base material. While relatively shifting the plasma torch unit and the base material placement table, a base material surface can be subjected to heat treatment.
摘要翻译：基材放置在基材放置台的基材放置面上。电感耦合等离子体焰炬单元构造为具有由绝缘材料构成的圆柱形腔室，该圆柱形腔体由绝缘材料构成，并设置有矩形裂缝状等离子体喷射口，并且盖住气缸的相对端部，气体喷射口将气体供应到圆柱形腔室和在圆柱形腔室中产生高频电磁场的螺线管线圈。通过向螺线管线圈提供高频电力的高频电源，在圆筒形室中产生等离子体，等离子体从等离子体喷射口发射到基体材料。在相对移动等离子体焰炬单元和基材放置台的同时，可以对基材表面进行热处理。

5. 发明申请

US20120186519A1 PLASMA DOPING METHOD AND APPARATUS 审中-公开
标题翻译：等离子喷涂方法和装置
公开(公告)号：US20120186519A1
公开(公告)日：2012-07-26
申请号：US13358277
申请日：2012-01-25
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： C23C16/50
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： A plasma doping method and apparatus in which a prescribed gas is introduced into a vacuum container while being exhausted by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency electric power of 13.56 MHz is supplied to a coil disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：一种等离子体掺杂方法和装置，其中将预定气体通过作为排气装置的涡轮分子泵排出而被引入真空容器中。通过压力调节阀将真空容器内的压力保持在规定值。将13.56MHz的高频电力供给到与样品电极相对的电介质窗附近设置的线圈，由此在真空容器内产生感应耦合等离子体。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

6. 发明授权

US07666770B2 Method of controlling impurity doping and impurity doping apparatus 失效
标题翻译：控制杂质掺杂和杂质掺杂装置的方法
公开(公告)号：US07666770B2
公开(公告)日：2010-02-23
申请号：US10570787
申请日：2004-09-06
申请人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
发明人： Yuichiro Sasaki , Ichiro Nakayama , Tomohiro Okumura , Satoshi Maeshima
IPC分类号： H01L21/42
CPC分类号： H01L21/265
摘要： A method is provided for controlling a dose amount of dopant to be doped into an object to be processed in plasma doping. According to the method, the doping control is formed of the following processes: determining the temperature of the object, the amount of ions having dopant in plasma that collide with the object, and types of gases in plasma during doping; calculating a dose amount by neutral gas according to the temperature of the object, and a dose amount by ions from the determined amount of ions containing dopant that collide with the object; and carrying out doping so that the sum of the dose amount by neutral gas and the dose amount by ions equal to a predetermined dose amount.
摘要翻译：提供了一种方法，用于控制掺杂到等离子体掺杂中待处理物体中的掺杂剂的剂量。根据该方法，掺杂控制由以下处理形成：确定物体的温度，与物体相撞的等离子体中具有掺杂剂的离子的量以及掺杂期间的等离子体中的气体的种类; 根据物体的温度由中性气体计算剂量，以及从确定量的与物体碰撞的掺杂剂的离子的离子的剂量; 并进行掺杂，使得中性气体的剂量量与离子的剂量之和等于预定剂量的量。

7. 发明申请

US20090233383A1 Plasma Doping Method and Apparatus 审中-公开
标题翻译：等离子体掺杂法和装置
公开(公告)号：US20090233383A1
公开(公告)日：2009-09-17
申请号：US11884924
申请日：2006-02-14
申请人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
发明人： Tomohiro Okumura , Yuichiro Sasaki , Katsumi Okashita , Hiroyuki Ito , Bunji Mizuno , Cheng-Guo Jin , Ichiro Nakayama
IPC分类号： H01L21/66 , B05C11/00
CPC分类号： H01L21/2236 , H01J37/321 , H01J37/32412 , H01J2237/2001
摘要： It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample.A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided. Every time a prescribed number of samples have been processed, a dummy sample is subjected to plasma doping and then to heating. The conditions for processing of a sample are controlled so that the measurement value of the surface sheet resistance becomes equal to a prescribed value, whereby the controllability of the impurity concentration can be increased.
摘要翻译：旨在提供一种等离子体掺杂方法和装置，该等离子体掺杂方法和装置在引入样品的表面层中的杂质的浓度的可控性方面是优异的。将规定的气体从作为排气装置的涡轮分子泵3排出而从气体供给装置2引入真空容器1。真空容器1中的压力通过压力调节阀4保持在规定值。13.56MHz的高频电力从高频电源5供给到靠近电介质窗7设置的线圈8，与样品电极6相对，从而在真空容器1中产生感应耦合等离子体。提供了用于向样品电极6提供高频电力的高频电源10。每当处理规定数量的样品时，将虚拟样品进行等离子体掺杂，然后进行加热。控制处理样品的条件使得表面薄层电阻的测量值等于规定值，从而可以提高杂质浓度的可控性。

8. 发明授权

US07510667B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US07510667B2
公开(公告)日：2009-03-31
申请号：US11397626
申请日：2006-04-05
申请人： Tomohiro Okumura , Ichiro Nakayama
发明人： Tomohiro Okumura , Ichiro Nakayama
IPC分类号： C23F1/00
CPC分类号： H01J37/32082 , C23F4/00 , Y02E50/30
摘要： A plasma processing apparatus includes a vacuum vessel, a substrate electrode for supporting a substrate, and an antenna disposed in opposition to the substrate electrode and covered with an insulating antenna cover. A first high-frequency power supplies a high-frequency power of a 30 MHz to 3 GHz frequency to the antenna, and a second high-frequency power supply supplies a high-frequency power of a 100 kHz to 20 MHz. A refrigerant supply unit is provided for supplying a refrigerant flow to the antenna, and an electrically conductive sheet is provided between the antenna and the antenna cover. The electrically conductive sheet has a surface that is parallel to the substrate electrode and is larger than an opposing surface of the antenna.
摘要翻译：等离子体处理装置包括真空容器，用于支撑基板的基板电极和与基板电极相对设置且被绝缘天线盖覆盖的天线。第一高频电源向天线提供30MHz至3GHz频率的高频功率，而第二高频电源提供100kHz至20MHz的高频功率。设置制冷剂供给单元，用于向天线供给制冷剂流，在天线和天线罩之间设置导电片。导电片具有平行于衬底电极并且大于天线的相对表面的表面。

9. 发明授权

US07465407B2 Plasma processing method and apparatus 失效
标题翻译：等离子体处理方法和装置
公开(公告)号：US07465407B2
公开(公告)日：2008-12-16
申请号：US10649670
申请日：2003-08-28
申请人： Mitsuo Saitoh , Tomohiro Okumura , Ichiro Nakayama
发明人： Mitsuo Saitoh , Tomohiro Okumura , Ichiro Nakayama
IPC分类号： C23C16/00
CPC分类号： H01J37/32009 , C23C16/5096 , H01J37/32376
摘要： In a plasma processing method for supplying an electric power to a first electrode, making a first electrode have a ground potential, or making a first electrode have a floating potential while supplying gas to a plasma source arranged in a vicinity of an object to be processed at a pressure in a vicinity of an atmospheric pressure. The method includes processing a part of the object to be processed with a plasma in a state where an area of a surface of a potentially controlled second electrode, arranged in a position opposite to the plasma source via the object to be processed, is made superposed on the object to be processed smaller than an area of a surface of the plasma source superposed on the object to be processed.
摘要翻译：在用于向第一电极供给电力的等离子体处理方法中，使第一电极具有接地电位，或者使第一电极具有浮置电位，同时向布置在待处理物体附近的等离子体源供给气体在大气压力附近的压力下。该方法包括在等离子体处理待处理物体的一部分的状态，其中经由待处理物体布置在与等离子体源相反的位置的潜在受控的第二电极的表面的面积被叠加对待处理的物体小于叠加在待处理物体上的等离子体源的表面的面积。

10. 发明申请

US20070212837A1 Method And Apparatus Of Fabricating Semiconductor Device 失效
标题翻译：制造半导体器件的方法和装置
公开(公告)号：US20070212837A1
公开(公告)日：2007-09-13
申请号：US11596372
申请日：2005-05-12
申请人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
发明人： Bunji Mizuno , Yuichiro Sasaki , Ichiro Nakayama , Hiroyuki Ito , Tomohiro Okumura , Cheng-Guo Jin , Katsumi Okashita , Hisataka Kanada
IPC分类号： H01L21/77
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/28035 , H01L29/7833
摘要： An object is to provide a semiconductor device in which uniform properties are intended and high yields are provided. Process steps are provided in which variations are adjusted in doping and annealing process steps that are subsequent process steps so as to cancel in-plane variations in a substrate caused by dry etching to finally as well provide excellent in-plane consistency in a substrate.
摘要翻译：本发明的目的是提供一种半导体器件，其中具有均匀的性质并提供高产率。提供了工艺步骤，其中在随后的工艺步骤的掺杂和退火工艺步骤中调整变化，以便最终消除由干蚀刻引起的衬底中的平面内变化，并且在衬底中提供优异的面内稠度。

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