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1. 发明申请

US20090011570A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090011570A1
公开(公告)日：2009-01-08
申请号：US12146143
申请日：2008-06-25
申请人： Ichiro Mizushima , Yoshio Ozawa , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi , Minako Inukai , Kaori Umezawa , Hiroaki Yamada
发明人： Ichiro Mizushima , Yoshio Ozawa , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi , Minako Inukai , Kaori Umezawa , Hiroaki Yamada
IPC分类号： H01L21/76
CPC分类号： H01L21/764
摘要： A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.
摘要翻译：一种制造半导体器件的方法包括：去除半导体衬底的一部分以在半导体衬底的表面区域中形成突出部分和凹陷部分，在凹部中形成第一外延半导体层，形成第二外延半导体层在所述突出部分和所述第一外延半导体层上，用所述第二外延半导体层的第二部分去除所述第二外延半导体层的第一部分，以露出所述第一外延半导体层的一部分，并且蚀刻所述第一外延半导体层从第一外延半导体层的暴露部分形成在第二外延半导体层的第二部分下面的空腔。

2. 发明授权

US08114755B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08114755B2
公开(公告)日：2012-02-14
申请号：US12146143
申请日：2008-06-25
申请人： Ichiro Mizushima , Yoshio Ozawa , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi , Minako Inukai , Kaori Umezawa , Hiroaki Yamada
发明人： Ichiro Mizushima , Yoshio Ozawa , Takashi Nakao , Akihito Yamamoto , Takashi Suzuki , Masahiro Kiyotoshi , Minako Inukai , Kaori Umezawa , Hiroaki Yamada
IPC分类号： H01L21/76
CPC分类号： H01L21/764
摘要： A method of manufacturing a semiconductor device includes removing a part of a semiconductor substrate to form a protruding portion and a recess portion in a surface area of the semiconductor substrate, forming a first epitaxial semiconductor layer in the recess portion, forming a second epitaxial semiconductor layer on the protruding portion and the first epitaxial semiconductor layer, removing a first part of the second epitaxial semiconductor layer with a second part of the second epitaxial semiconductor layer left to expose a part of the first epitaxial semiconductor layer, and etching the first epitaxial semiconductor layer from the exposed part of the first epitaxial semiconductor layer to form a cavity under the second part of the second epitaxial semiconductor layer.
摘要翻译：一种制造半导体器件的方法包括：去除半导体衬底的一部分以在半导体衬底的表面区域中形成突出部分和凹陷部分，在凹部中形成第一外延半导体层，形成第二外延半导体层在所述突出部分和所述第一外延半导体层上，用所述第二外延半导体层的第二部分去除所述第二外延半导体层的第一部分，以露出所述第一外延半导体层的一部分，并且蚀刻所述第一外延半导体层从第一外延半导体层的暴露部分形成在第二外延半导体层的第二部分下面的空腔。

3. 发明申请

US20080064212A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20080064212A1
公开(公告)日：2008-03-13
申请号：US11892634
申请日：2007-08-24
申请人： Yoshihiro Ogawa , Masahiro Kiyotoshi , Katsuhiko Tachibana , Hiroyasu Iimori , Hiroaki Yamada , Kaori Umezawa , Hiroshi Tomita , Atsuko Kawasaki
发明人： Yoshihiro Ogawa , Masahiro Kiyotoshi , Katsuhiko Tachibana , Hiroyasu Iimori , Hiroaki Yamada , Kaori Umezawa , Hiroshi Tomita , Atsuko Kawasaki
IPC分类号： H01L21/311 , H01L21/31
CPC分类号： H01L21/3125 , C23C18/122 , C23C18/1287 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/02343 , H01L21/316 , H01L21/3165 , H01L21/67086
摘要： A method of manufacturing a semiconductor device, has applying perhydro polysilazane to a substrate; and immersing at least the surface of said substrate to which perhydro polysilazane is applied in a mixture containing water heated to 120 degrees C. or higher to which ultrasound is applied, thereby modifying the perhydro polysilazane into silicon oxide.
摘要翻译：一种半导体器件的制造方法，将全氢化硅氮烷应用于基板; 并将至少将所述基板的表面施加于含有加氢至120℃以上的水的混合物中，在该混合物中施加全羟基聚硅氮烷，从而将全氟聚硅氮烷改性为氧化硅。

4. 发明授权

US08567420B2 Cleaning apparatus for semiconductor wafer 有权
标题翻译：半导体晶圆清洗装置
公开(公告)号：US08567420B2
公开(公告)日：2013-10-29
申请号：US12412638
申请日：2009-03-27
申请人： Minako Inukai , Hiroshi Tomita , Kaori Umezawa , Yasuhito Yoshimizu , Linan Ji
发明人： Minako Inukai , Hiroshi Tomita , Kaori Umezawa , Yasuhito Yoshimizu , Linan Ji
IPC分类号： B08B3/00 , B08B3/12 , B08B6/00
CPC分类号： H01L21/02052 , H01L21/67051
摘要： A cleaning apparatus for a semiconductor wafer includes: a gas jet device including a gas nozzle which jets a first gas onto the surface of a semiconductor wafer to thin the thickness of a stagnant layer on the surface of the semiconductor wafer; and a two-fluid jet device including a two-fluid nozzle which jets droplet mist onto a region where thickness of the stagnant layer of the semiconductor wafer is thinned, the droplet mist being mixed two-fluid of a liquid and a second gas.
摘要翻译：一种用于半导体晶片的清洁装置包括：气体喷射装置，其包括将第一气体喷射到半导体晶片的表面上的气体喷嘴，以使半导体晶片的表面上的停滞层的厚度减薄; 以及双液体喷射装置，其包括将液滴雾喷射到半导体晶片的停滞层的厚度变薄的区域上的双流体喷嘴，所述液滴雾混合液体的二液体和第二气体。

5. 发明申请

US20110061684A1 CLEANING METHOD FOR SEMICONDUCTOR WAFER 审中-公开
标题翻译：半导体波形清洗方法
公开(公告)号：US20110061684A1
公开(公告)日：2011-03-17
申请号：US12878382
申请日：2010-09-09
申请人： Hiroshi TOMITA , Hidekazu Hayashi , Minako Inukai , Yasuhito Yoshimizu , Kaori Umezawa
发明人： Hiroshi TOMITA , Hidekazu Hayashi , Minako Inukai , Yasuhito Yoshimizu , Kaori Umezawa
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , H01L21/02052
摘要： A cleaning method for a semiconductor wafer with cleaning liquid comprising: cleaning the semiconductor wafer while the temperature of the surface of the semiconductor wafer is from 30 degrees to 50 degrees, the cleaning liquid has lower surface tension and viscosity than water.
摘要翻译：一种具有清洗液的半导体晶片的清洗方法，包括：在半导体晶片的表面的温度为30度至50度的范围内清洗半导体晶片，该清洗液具有比水低的表面张力和粘度。

6. 发明申请

US20090255558A1 CLEANING APPARATUS FOR SEMICONDUCTOR WAFER AND CLEANING METHOD FOR SEMICONDUCTOR WAFER 有权
标题翻译：半导体滤波器的清洗装置和半导体滤波器的清洁方法
公开(公告)号：US20090255558A1
公开(公告)日：2009-10-15
申请号：US12412638
申请日：2009-03-27
申请人： Minako Inukai , Hiroshi Tomita , Kaori Umezawa , Yasuhito Yoshimizu , Linan Ji
发明人： Minako Inukai , Hiroshi Tomita , Kaori Umezawa , Yasuhito Yoshimizu , Linan Ji
IPC分类号： B08B3/00
CPC分类号： H01L21/02052 , H01L21/67051
摘要： A cleaning apparatus for a semiconductor wafer includes: a gas jet device including a gas nozzle which jets a first gas onto the surface of a semiconductor wafer to thin the thickness of a stagnant layer on the surface of the semiconductor wafer; and a two-fluid jet device including a two-fluid nozzle which jets droplet mist onto a region where thickness of the stagnant layer of the semiconductor wafer is thinned, the droplet mist being mixed two-fluid of a liquid and a second gas.
摘要翻译：一种用于半导体晶片的清洁装置包括：气体喷射装置，其包括将第一气体喷射到半导体晶片的表面上的气体喷嘴，以使半导体晶片的表面上的停滞层的厚度减薄; 以及双液体喷射装置，其包括将液滴雾喷射到半导体晶片的停滞层的厚度变薄的区域上的双流体喷嘴，所述液滴雾混合液体的二液体和第二气体。

7. 发明申请

US20070004170A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070004170A1
公开(公告)日：2007-01-04
申请号：US11451519
申请日：2006-06-13
申请人： Atsuko Kawasaki , Takeshi Hoshi , Masahiro Kiyotoshi , Takatoshi Ono , Yoshihiro Ogawa , Kaori Umezawa
发明人： Atsuko Kawasaki , Takeshi Hoshi , Masahiro Kiyotoshi , Takatoshi Ono , Yoshihiro Ogawa , Kaori Umezawa
IPC分类号： H01L21/76
CPC分类号： H01L21/76229 , H01L21/76224
摘要： A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.
摘要翻译：一种制造半导体器件的方法包括在包括半导体衬底的衬底的表面上形成用于隔离的沟槽，通过将溶液涂覆在衬底上，用含有全氢硅氮烷聚合物的溶液填充沟槽，将溶液转化为含有通过加热溶液，将膜转化为二氧化硅膜，包括在含有蒸气的气氛中的第一温度下加热该膜，并且在第一温度下在比第一温度低的温度下加热第一温度的膜，含有蒸汽或纯水的气氛。

8. 发明授权

US07538047B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07538047B2
公开(公告)日：2009-05-26
申请号：US11451519
申请日：2006-06-13
申请人： Atsuko Kawasaki , Takeshi Hoshi , Masahiro Kiyotoshi , Takatoshi Ono , Yoshihiro Ogawa , Kaori Umezawa
发明人： Atsuko Kawasaki , Takeshi Hoshi , Masahiro Kiyotoshi , Takatoshi Ono , Yoshihiro Ogawa , Kaori Umezawa
IPC分类号： H01L21/469
CPC分类号： H01L21/76229 , H01L21/76224
摘要： A method of manufacturing a semiconductor device includes forming a trench for isolation on a surface of a substrate including a semiconductor substrate, filling the trench with a solution containing a perhydrosilazane polymer by applying the solution on the substrate, converting the solution into a film containing the perhydrosilazane polymer by heating the solution, and converting the film into a silicon dioxide film including heating the film at a first temperature in an atmosphere containing vapor, and heating the film heated at the first temperature at a second temperature lower than the first temperature in an atmosphere containing vapor or in pure water.
摘要翻译：一种制造半导体器件的方法包括在包括半导体衬底的衬底的表面上形成用于隔离的沟槽，通过将溶液涂覆在衬底上，用含有全氢硅氮烷聚合物的溶液填充沟槽，将溶液转化为含有通过加热溶液，将膜转化为二氧化硅膜，包括在含有蒸气的气氛中的第一温度下加热该膜，并且在第一温度下在比第一温度低的温度下加热第一温度的膜，含有蒸汽或纯水的气氛。

9. 发明授权

US06365472B1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06365472B1
公开(公告)日：2002-04-02
申请号：US09388947
申请日：1999-09-02
申请人： Kazunari Ishimaru , Fumitomo Matsuoka , Kaori Umezawa
发明人： Kazunari Ishimaru , Fumitomo Matsuoka , Kaori Umezawa
IPC分类号： H01L21336
CPC分类号： H01L29/6653 , H01L21/2652 , H01L21/266 , H01L21/28247 , H01L29/6659 , Y10S257/90
摘要： A semiconductor device comprises an LDD structure MOS transistor wherein the formation of defects due to ion implantation at the edge of the side wall of the gate electrode is suppressed. In order to perform the ion implantation for forming the source and drain regions of the MOS transistor, impurity ions are implanted using the first and second side walls provided to the gate electrode as a mask, and then the heat treatment for impurity activation is performed after removing the second side wall near the source and drain regions doped with high-concentration impurity ions. By removing the second side wall prior to the heat treatment, the stress applied to the edges of the high-concentration impurity doped regions in an amorphous state is decreased. The defects therefore can be suppressed from being formed at the edges of the source and drain regions near the gate electrode in the recrystallization of the amorphous layer by the heat treatment. As a result, the semiconductor device with high performance and reliability, in which the gate leakage current is small, and the manufacturing method thereof can be attained.
摘要翻译：半导体器件包括LDD结构的MOS晶体管，其中抑制了由栅电极侧壁边缘的离子注入导致的缺陷的形成。为了进行用于形成MOS晶体管的源极区和漏极区的离子注入，使用设置在栅电极的第一和第二侧壁作为掩模注入杂质离子，然后进行用于杂质活化的热处理，去除掺杂有高浓度杂质离子的源区和漏区附近的第二侧壁。通过在热处理之前除去第二侧壁，施加到非晶态的高浓度杂质掺杂区域的边缘的应力降低。因此通过热处理在非晶层的再结晶中可以抑制在栅电极附近的源极和漏极区的边缘处形成缺陷。结果，可以实现其栅极漏电流小的高性能和可靠性的半导体器件及其制造方法。

10. 发明申请

US20050186803A1 Method of manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20050186803A1
公开(公告)日：2005-08-25
申请号：US11060567
申请日：2005-02-18
申请人： Kaori Umezawa , Hiroshi Tomita
发明人： Kaori Umezawa , Hiroshi Tomita
IPC分类号： G03F7/42 , H01L21/8234 , H01L21/8238 , H01L21/8242 , H01L21/8247 , H01L27/088 , H01L27/092 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792 , H01L21/00 , H01L21/84
CPC分类号： H01L27/11543 , H01L21/823857 , H01L27/10873 , H01L27/10894 , H01L27/115 , H01L27/11521 , H01L27/11526
摘要： A method of manufacturing a semiconductor device includes selectively forming a photoresist film on an insulating film formed on a surface of a underlying semiconductor region such that the photoresist provides a masked surface region and an exposed surface region for the insulating film, and selectively removing that portion of the insulating film which corresponds to the exposed surface region to expose the underlying semiconductor region. Sulfuric acid is applied to a plane including a surface of the photoresist film, with the surface of the underlying semiconductor region being exposed and the photoresist film is removed with the sulfuric acid.
摘要翻译：制造半导体器件的方法包括：在形成在下面半导体区域的表面上的绝缘膜上选择性地形成光致抗蚀剂膜，使得光致抗蚀剂提供用于绝缘膜的掩模表面区域和暴露表面区域，并且选择性地去除该部分对应于暴露的表面区域以暴露下面的半导体区域的绝缘膜。将硫酸施加到包括光致抗蚀剂膜的表面的平面，下面的半导体区域的表面被暴露，并且用硫酸除去光致抗蚀剂膜。

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