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1. 发明申请

US20030006459A1 Method of controlling floating body effects in an asymmetrical SOI device 有权
标题翻译：控制非对称SOI器件浮体效应的方法
公开(公告)号：US20030006459A1
公开(公告)日：2003-01-09
申请号：US09899957
申请日：2001-07-06
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： James W. Adkisson , Michael J. Hargrove , Lyndon R. Logan , Isabel Y. Yang
IPC分类号： H01L029/76 , H01L021/336
CPC分类号： H01L29/78612 , H01L21/26586
摘要： High performance asymmetric transistors including controllable diode characteristics at the source and/or drain are developed by supplying impurities with high accuracy of location by angled implants in a trench or diffusion from a solid body formed as a sidewall of doped material. High concentration gradient of impurities to support high performance is achieved by providing for reduced heat treatment after the impurity is supplied in order to limit diffusion previously necessary to achieve the desired location of impurity structures. Damascene or quasi-Damascene gate structures are also provided for high dimensional uniformity, increased manufacturing yield and structural integrity of the transistor.
摘要翻译：在源极和/或漏极处包括可控二极管特性的高性能不对称晶体管通过在沟槽中的倾斜注入提供高精度的杂质或从形成为掺杂材料的侧壁的固体的扩散而开发。通过在提供杂质之后提供减少的热处理以便限制先前必需的扩散以实现杂质结构的所需位置来实现高浓度梯度的杂质以支持高性能。还提供了大马士革或准大马士革门结构，用于高尺寸均匀性，增加的制造产量和晶体管的结构完整性。

2. 发明申请

US20020197839A1 ANTI-SPACER STRUCTURE FOR SELF-ALIGNED INDEPENDENT GATE IMPLANTATION 失效
标题翻译：自对准独立门植入的防空间结构
公开(公告)号：US20020197839A1
公开(公告)日：2002-12-26
申请号：US09888160
申请日：2001-06-22
申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Omer H. Dokumaci , Bruce B. Doris , Peter Smeys , Isabel Y. Yang
IPC分类号： H01L021/8238 , H01L021/336 , H01L021/3205 , H01L021/4763
CPC分类号： H01L21/82345
摘要： A method for improving the gate activation of metal oxide semiconductor field effect transistor (MOSFET) structures are provided. The method of the present invention includes the steps of forming a plurality of patterned gate stacks atop a layer of gate dielectric material; forming a first planarizing organic film on the gate dielectric material and abutting vertical sidewalls of the patterned gate stacks, said planarizing organic film not being present on top, horizontal surfaces of each of the patterned gate stacks; blocking some of the plurality of patterned gate stacks with a first resist, while leaving other patterned gate stacks of said plurality unblocked; implanting first ions into the unblocked patterned gate stacks; removing the first resist and first planarizing organic film and forming a second planarizing organic film and blocking the previously unblocked patterned gate stacks with a second resist; implanting second ions into the patterned gate stacks that are not blocked by said second resist; and removing the second resist and the second planarizing organic film.
摘要翻译：提供了一种用于改善金属氧化物半导体场效应晶体管（MOSFET）结构的栅激活的方法。本发明的方法包括以下步骤：在栅极电介质材料层的上方形成多个图案化的栅叠层; 在所述栅极电介质材料上形成第一平面化有机膜并邻接所述图案化栅极叠层的垂直侧壁，所述平面化有机膜不存在于每个所述图案化栅极堆叠的顶部水平表面上; 用第一抗蚀剂阻挡多个图案化栅极堆叠中的一些，同时留下所述多个未封装的其它图案化栅极堆叠; 将第一离子注入未封闭的图案化栅极堆叠中; 去除第一抗蚀剂和第一平面化有机膜并形成第二平面化有机膜并用第二抗蚀剂阻挡先前未封闭的图案化栅叠层; 将第二离子注入未被所述第二抗蚀剂阻挡的图案化栅极堆叠中; 并除去第二抗蚀剂和第二平面化有机膜。

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