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1. 发明公开

US20240304415A1 Method for Determining Focal Properties in a Target Beam Field of a Multi-Beam Charged-Particle Processing Apparatus 审中-公开
公开(公告)号：US20240304415A1
公开(公告)日：2024-09-12
申请号：US18596458
申请日：2024-03-05
申请人： IMS Nanofabrication GmbH
发明人： Christoph Spengler , Wolf Naetar , Matthias Liertzer
IPC分类号： H01J37/317 , H01J37/153
CPC分类号： H01J37/3177 , H01J37/153 , H01J2237/0435 , H01J2237/1516 , H01J2237/1532
摘要： A method for determining focal properties in a target beam field of a charged-particle multi-beam processing apparatus is presented, where the focal properties relate to aperture images formed by the beamlets at or near the target within this apparatus, such as height of focus, astigmatic length, or size of blur. By modifying an electrostatic voltage of a lens or another suitable operating parameter of the projection optics, the landing angles of the beamlets are tilted by a small tilting angle, causing a small displacement of the positions where the beamlets hit the target surface. Using the amounts of displacement and the change of landing angles a map is generated that describes a mapping from the change of landing angles to the amounts of displacement as a function of the position, for instance by using a best fit to a predefined model; this map is then used to extract the focal properties, which in turn can be used to correct for imaging errors in the processing apparatus.

2. 发明申请

US20200348597A1 Adapting the Duration of Exposure Slots in Multi-Beam Writers 审中-公开
公开(公告)号：US20200348597A1
公开(公告)日：2020-11-05
申请号：US16865135
申请日：2020-05-01
申请人： IMS Nanofabrication GmbH
发明人： Gottfried Hochleitner , Christoph Spengler , Wolf Naetar
IPC分类号： G03F7/213 , H01J37/317
摘要： In a charged-particle lithography apparatus, during writing a desired pattern, the duration of exposure slots is adapted to compensate for fluctuations of the particle beam. In the writing process the aperture images are mutually overlapping on the target so each pixel is exposed through a number of aperture images overlapping at the respective pixel, which results in an exposure of the respective pixel through an effective pixel exposure time, i.e., the sum of durations of contributing exposure slots, and the exposure slot durations are adjusted by: (i) determining a desired duration of the effective pixel exposure time for the pixels, as a function of the time of exposure of the pixels, (ii) determining contributing exposure slots for the pixels, (iii) calculating durations for the contributing exposure slots thus determined such that the sum of the durations over said contributing exposure slots is an actual effective exposure time which approximates said desired duration of the effective pixel exposure time. The durations in step (iii) are calculated in accordance with a predetermined set of allowed durations, wherein at least one of the durations thus calculated is different from the other durations selected for said set of exposure slots

3. 发明授权

US10522329B2 Dose-related feature reshaping in an exposure pattern to be exposed in a multi beam writing apparatus 有权
公开(公告)号：US10522329B2
公开(公告)日：2019-12-31
申请号：US16105699
申请日：2018-08-20
申请人： IMS Nanofabrication GmbH
发明人： Elmar Platzgummer , Christoph Spengler , Wolf Naetar
IPC分类号： H01J37/00 , H01J37/302 , H01J37/317
摘要： A method for re-calculating a pattern to be exposed on a target by means of a charged-particle multi-beam writing apparatus is presented. The pattern elements of a pattern, initially associated with a respective assigned dose, are recalculated in view of obtaining reshaped pattern elements which have a nominal dose as assigned dose. The nominal dose represents a predefined standard value of exposure dose to be exposed for pixels during a scanning stripe exposure within the multi-beam apparatus. For the pattern elements associated with an assigned dose deviating from the nominal dose, the pattern element is reshaped by determining a reshape distance from the value of the assigned dose using a predefined dose slope function forming a reshaped pattern element, whose boundary is offset with regard to boundary of the initial pattern element by an offset distance equaling said reshape distance, assigning the nominal dose to the reshaped pattern element, and replacing the pattern element by the reshaped pattern element.

4. 发明公开

US20230296989A1 Correction of Thermal Expansion in a Lithographic Device 审中-公开
公开(公告)号：US20230296989A1
公开(公告)日：2023-09-21
申请号：US18185280
申请日：2023-03-16
申请人： IMS Nanofabrication GmbH
发明人： Matthias Liertzer , Christoph Spengler , Wolf Naetar , Elmar Platzgummer
IPC分类号： G03F7/20
CPC分类号： G03F7/7055 , G03F7/70891
摘要： A pattern writing method for charged-particle lithography apparatuses using an improved correction for thermal distortion of the substrate includes determining an exposure position where the beam impinges on the substrate and the power of the beam at the exposure position; calculating heating of the substrate at the exposure position, and calculating, for a plurality of locations over the substrate, and the thermal diffusion and radiative cooling; calculating, for the same or a reduced plurality of locations on the substrate, the positional change of the substrate due to thermal expansion; determining a displacement distance which compensates the positional change at the exposure position, updating the structure to be written by shifting the exposure position of the beam by said displacement distance, and writing the updated structures on the substrate with the beam. These steps are repeated as a function of time and/or varying exposure position of the beam substrate position.

5. 发明申请

US20190214226A1 Non-linear Dose- and Blur-Dependent Edge Placement Correction 审中-公开
公开(公告)号：US20190214226A1
公开(公告)日：2019-07-11
申请号：US16239061
申请日：2019-01-03
申请人： IMS Nanofabrication GmbH
发明人： Elmar Platzgummer , Christoph Spengler , Wolf Naetar
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3026 , H01J37/3174
摘要： In a rasterized exposure method, in order to correct for a non-linear relationship between the position of a feature edge (dCD) of a pattern element boundary and the nominal position of the boundary as expressed through the dose of exposure (d) of the edge pixel, a position correction for edge positions is employed. The position correction includes: determining a position value describing said edge position, determining a corrected position value based on the position value using a predefined non-linear function, and modifying the pattern to effectively shift the pattern element boundary in accordance with the corrected position value. The non-linear function describes the inverse of the relationship between a nominal position value (d), which is used as input value during exposure of the pattern, and a resulting position (dCD) of the pattern element boundary generated when exposed with said nominal position value.

6. 发明申请

US20190066976A1 Dose-Related Feature Reshaping in an Exposure Pattern to be Exposed in a Multi Beam Writing Apparatus 审中-公开
公开(公告)号：US20190066976A1
公开(公告)日：2019-02-28
申请号：US16105699
申请日：2018-08-20
申请人： IMS Nanofabrication GmbH
发明人： Elmar Platzgummer , Christoph Spengler , Wolf Naetar
IPC分类号： H01J37/302 , H01J37/317
CPC分类号： H01J37/3026 , H01J37/3177 , H01J2237/24507 , H01J2237/31764 , H01J2237/31774
摘要： A method for re-calculating a pattern to be exposed on a target by means of a charged-particle multi-beam writing apparatus is presented. The pattern elements of a pattern, initially associated with a respective assigned dose, are recalculated in view of obtaining reshaped pattern elements which have a nominal dose as assigned dose. The nominal dose represents a predefined standard value of exposure dose to be exposed for pixels during a scanning stripe exposure within the multi-beam apparatus. For the pattern elements associated with an assigned dose deviating from the nominal dose, the pattern element is reshaped by determining a reshape distance from the value of the assigned dose using a predefined dose slope function forming a reshaped pattern element, whose boundary is offset with regard to boundary of the initial pattern element by an offset distance equaling said reshape distance, assigning the nominal dose to the reshaped pattern element, and replacing the pattern element by the reshaped pattern element.

7. 发明授权

US11569064B2 Method for irradiating a target using restricted placement grids 有权
公开(公告)号：US11569064B2
公开(公告)日：2023-01-31
申请号：US16133578
申请日：2018-09-17
申请人： IMS Nanofabrication GmbH
发明人： Elmar Platzgummer , Christoph Spengler , Wolf Naetar
IPC分类号： H01J37/317 , H01J37/302
摘要： A method for irradiating a target with a beam of energetic electrically charged particles, wherein the target comprises an exposure region where an exposure by said beam is to be performed, and the exposure of a desired pattern is done employing a multitude of exposure positions on the target. Each exposure position represents the location of one of a multitude of exposure spots of uniform size and shape, with each exposure spot covering at least one pattern pixel of the desired pattern. The exposure positions are located within a number of mutually separate cluster areas which are defined at respective fixed locations on the target. In each cluster area the exposure position are within a given neighboring distance to a next neighboring exposure position, while the cluster areas are separated from each other by spaces free of exposure positions, which space has a width, which is at least the double of the neighboring distance.

8. 发明授权

US10651010B2 Non-linear dose- and blur-dependent edge placement correction 有权
公开(公告)号：US10651010B2
公开(公告)日：2020-05-12
申请号：US16239061
申请日：2019-01-03
申请人： IMS Nanofabrication GmbH
发明人： Elmar Platzgummer , Christoph Spengler , Wolf Naetar
IPC分类号： H01J37/302 , H01J37/317
摘要： A rasterized exposure method implementing a position correction for edge positions to correct for a non-linear relationship between the position of a feature edge (dCD) of a pattern element boundary and the nominal position of the boundary as expressed through the dose of exposure (d) of the edge pixel is provided. The position correction includes: determining a position value of the edge position, determining a corrected position value based on the position value using a predefined non linear function, and modifying the pattern to effectively shift the pattern element boundary in accordance with the corrected position value. The non linear function describes the inverse of the relationship between a nominal position value (d), which is used as input value during exposure of the pattern, and a resulting position (dCD) of the pattern element boundary generated when exposed with the nominal position value.

9. 发明授权

US11099482B2 Adapting the duration of exposure slots in multi-beam writers 有权
公开(公告)号：US11099482B2
公开(公告)日：2021-08-24
申请号：US16865135
申请日：2020-05-01
申请人： IMS Nanofabrication GmbH
发明人： Gottfried Hochleitner , Christoph Spengler , Wolf Naetar
IPC分类号： H01J37/317 , H01J37/302 , G03F7/213
摘要： In a charged-particle lithography apparatus, during writing a desired pattern, the duration of exposure slots is adapted to compensate for fluctuations of the particle beam. In the writing process the aperture images are mutually overlapping on the target so each pixel is exposed through a number of aperture images overlapping at the respective pixel, which results in an exposure of the respective pixel through an effective pixel exposure time, i.e., the sum of durations of contributing exposure slots, and the exposure slot durations are adjusted by: (i) determining a desired duration of the effective pixel exposure time for the pixels, as a function of the time of exposure of the pixels, (ii) determining contributing exposure slots for the pixels, (iii) calculating durations for the contributing exposure slots thus determined such that the sum of the durations over said contributing exposure slots is an actual effective exposure time which approximates said desired duration of the effective pixel exposure time. The durations in step (iii) are calculated in accordance with a predetermined set of allowed durations, wherein at least one of the durations thus calculated is different from the other durations selected for said set of exposure slots.

10. 发明申请

US20210240074A1 Correction of Blur Variation in a Multi-Beam Writer 有权
公开(公告)号：US20210240074A1
公开(公告)日：2021-08-05
申请号：US17166812
申请日：2021-02-03
申请人： IMS Nanofabrication GmbH
发明人： Christoph Spengler , Wolf Naetar , Johannes Leitner
IPC分类号： G03F1/74 , G03F1/70 , G03F7/20
摘要： In order to compensate for undesired effects of varying elevation of a target with respect to a nominal target plane, during writing a desired pattern on the target in a charged-particle beam apparatus, the pattern is re-calculated in each of a number of segments of the target plane by: determining an elevation of the target in the segment from the nominal target plane; determining a local blur value which represents the actual value of blur corresponding to the elevation, with regard to a dependence of the blur upon the elevation of the target; calculating a convolution kernel which represents a point spreading function realizing a local blur value; and re-calculating a nominal exposure pattern by applying the kernel to the pattern. The convolution kernel corresponds to introducing an additional blur into the pattern in the segment, increasing the blur to a given target blur value which is uniform to all segments.

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