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1. 发明授权

US10832953B2 Technological method for preventing, by means of buried etch stop layers, the creation of vertical/lateral inhomogeneities when etching through-silicon vias 有权
公开(公告)号：US10832953B2
公开(公告)日：2020-11-10
申请号：US15718480
申请日：2017-09-28
申请人： IHP GMBH—INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE MIKROELEKTRONIK
发明人： Matthias Wietstruck , Mehmet Kaynak , Philip Kulse , Marco Lisker , Steffen Marschmeyer , Dirk Wolansky
IPC分类号： H01L21/768 , H01L23/48 , H01L21/306 , H01L21/308 , H01L21/683 , H01L21/78 , H01L23/528 , H01L23/66
摘要： Method for producing a semiconductor device by providing a silicon wafer having a plurality of equal height raised portions on a first surface thereof; depositing an etch stop layer on the first surface; planarizing a surface of the etch stop layer; permanently bonding a first carrier wafer on the etch stop layer surface; producing components on or in a second wafer surface in a FEOL process; etching a plurality of trenches into the wafer, each trench formed at the respective location of one of the raised portions; depositing side wall insulation layers on side walls of the trenches; forming through-silicon vias by filling the trenches with electrically conductive material; producing a conductor path stack in a BEOL process for contacting the active components on the second surface; temporarily bonding a second carrier wafer onto a surface of the conductor path stack; removing the first carrier wafer and exposing the vias.

2. 发明授权

US09638617B2 MEMS-microviscometer 有权
公开(公告)号：US09638617B2
公开(公告)日：2017-05-02
申请号：US13921515
申请日：2013-06-19
申请人： IHP GmbH
发明人： Mario Birkholz , Jurgen Drews , Karl-Ernst Ehwald , Dieter Genschow , Ulrich Haak , Philip Kulse , Egbert Matthus , Katrin Schulz , Wolfgang Winkler , Dirk Wolansky , Marlen Frohlich
IPC分类号： G01N11/00 , G01N11/16
CPC分类号： G01N11/00 , G01N11/16
摘要： Micro-electromechanical device for measuring the viscosity of a fluid, comprises a measuring chamber with a micromechanical actuator, arranged as a cantilever above a metallically conductive counter electrode, elastically deformable towards the counter electrode, surrounded by the fluid to be measured and made of a metallically conductive material, a two-terminal RF voltage source that can be switched off, having a first output terminal connected to the actuator, and a second output terminal connected to the counter electrode, and which is designed to output an RF voltage signal that is suitable for deflecting the actuator out of its rest position, and a measuring device to detect a change in the frequency, amplitude or phase of the RF signal in order to determine a measurement value for the viscosity-dependent speed at which the actuator is deformed.

3. 发明申请

US20180286751A1 TECHNOLOGICAL METHOD FOR PREVENTING, BY MEANS OF BURIED ETCH STOP LAYERS, THE CREATION OF VERTICAL/LATERAL INHOMOGENEITIES WHEN ETCHING THROUGH-SILICON VIAS 审中-公开
公开(公告)号：US20180286751A1
公开(公告)日：2018-10-04
申请号：US15718480
申请日：2017-09-28
申请人： IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUR INNOVATIVE
发明人： Matthias Wietstruck , Mehmet Kaynak , Philip Kulse , Marco Lisker , Steffen Marschmeyer , Dirk Wolansky
IPC分类号： H01L21/768 , H01L21/683 , H01L21/306 , H01L21/78 , H01L23/48 , H01L23/528 , H01L21/308 , H01L23/66
摘要： Method for producing a semiconductor device by providing a silicon wafer having a plurality of equal height raised portions on a first surface thereof; depositing an etch stop layer on the first surface; planarizing a surface of the etch stop layer; permanently bonding a first carrier wafer on the etch stop layer surface; producing components on or in a second wafer surface in a FEOL process; etching a plurality of trenches into the wafer, each trench formed at the respective location of one of the raised portions; depositing side wall insulation layers on side walls of the trenches; forming through-silicon vias by filling the trenches with electrically conductive material; producing a conductor path stack in a BEOL process for contacting the active components on the second surface; temporarily bonding a second carrier wafer onto a surface of the conductor path stack; removing the first carrier wafer and exposing the vias.

4. 发明申请

US20140000344A1 MEMS-Microviscometer 有权
标题翻译：微机电显微镜
公开(公告)号：US20140000344A1
公开(公告)日：2014-01-02
申请号：US13921515
申请日：2013-06-19
申请人： IHP GmbH
发明人： Mario Birkholz , Jurgen Drews , Karl-Ernst Ehwald , Dieter Genschow , Ulrich Haak , Philip Kulse , Egbert Matthus , Katrin Schulz , Wolfgang Winkler , Dirk Wolansky , Marlen Frohlich
IPC分类号： G01N11/00
CPC分类号： G01N11/00 , G01N11/16
摘要： Micro-electromechanical device for measuring the viscosity of a fluid, comprises a measuring chamber with a micromechanical actuator, arranged as a cantilever above a metallically conductive counter electrode, elastically deformable towards the counter electrode, surrounded by the fluid to be measured and made of a metallically conductive material, a two-terminal RF voltage source that can be switched off, having a first output terminal connected to the actuator, and a second output terminal connected to the counter electrode, and which is designed to output an RF voltage signal that is suitable for deflecting the actuator out of its rest position, and a measuring device to detect a change in the frequency, amplitude or phase of the RF signal in order to determine a measurement value for the viscosity-dependent speed at which the actuator is deformed.
摘要翻译：用于测量流体粘度的微机电装置包括具有微机械致动器的测量室，其布置为在金属导电对电极之上的悬臂，可朝向对电极弹性变形，被被测流体包围并由金属导电材料，可以关闭的两端RF电压源，具有连接到致动器的第一输出端子和连接到对电极的第二输出端子，并且被设计成输出RF电压信号，适于将致动器偏离其静止位置;以及测量装置，用于检测RF信号的频率，振幅或相位的变化，以便确定致动器变形时与粘度相关的速度的测量值。

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