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1. 发明申请

US20080138176A1 Apparatus for manufacturing semiconductor device 审中-公开
标题翻译：半导体器件制造装置
公开(公告)号：US20080138176A1
公开(公告)日：2008-06-12
申请号：US11881012
申请日：2007-07-25
申请人： Hyung-Joon Kim , Seung-Bae Lee , Dae-Hyun Yang , Ki-Yung Lee
发明人： Hyung-Joon Kim , Seung-Bae Lee , Dae-Hyun Yang , Ki-Yung Lee
IPC分类号： H01L21/677
CPC分类号： H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67201
摘要： The present invention provides an apparatus for manufacturing a semiconductor device. The apparatus includes vacuum wafer transfer modules disposed in a line so as to correspond to stages, a loadlock chamber module transferring wafers in vacuum, first process chambers disposed around the vacuum wafer transfer modules so as to process the wafers transferred from the loadlock chamber module, first buffer stages disposed in the vacuum wafer transfer modules so that the wafers are loaded thereon and unloaded therefrom, a first transfer robot disposed between the first process chambers so as to transfer the wafers from the loadlock chamber module to the first process chambers and then to transfer the wafers from the loadlock chamber module onto the first buffer stages, second process chambers disposed around the vacuum wafer transfer modules so as to process the wafers transferred from the first buffer stages, and a second transfer robot disposed between the second process chambers so as to transfer the wafers, which are transferred to the first buffer stages, to the second process chambers.
摘要翻译：本发明提供一种半导体器件的制造装置。该装置包括：一排设置成对应于一级的真空晶片传送模块，一个负载锁定室模块，在真空中传送晶片，设置在真空晶片传送模块周围的第一处理室，以处理从负载锁定室模块传送的晶片，设置在真空晶片转移模块中的第一缓冲级，使得晶片在其上装载并卸载;第一传送机器人，设置在第一处理室之间，以将晶片从负载锁定室模块传送到第一处理室，然后到将晶片从负载锁定室模块转移到第一缓冲级上，第二处理室设置在真空晶片传送模块周围，以处理从第一缓冲级传送的晶片，以及设置在第二处理室之间的第二传送机器人，以便以将转移到第一缓冲级的晶片传送到第二缓冲级处理室。

2. 发明申请

US20060162863A1 Semiconductor plasma-processing apparatus and method 审中-公开
标题翻译：半导体等离子体处理装置及方法
公开(公告)号：US20060162863A1
公开(公告)日：2006-07-27
申请号：US11332169
申请日：2006-01-17
申请人： Hyung-Joon Kim , Ki-Yung Lee
发明人： Hyung-Joon Kim , Ki-Yung Lee
IPC分类号： C23F1/00 , B44C1/22 , H05H1/24 , H01L21/302 , C23C16/00
CPC分类号： H01J37/32357 , H01J37/321
摘要： A semiconductor plasma-processing apparatus smoothes effects of side radical-concentration, which are frequently generated by inductive-coupling plasma sources, enhancing the etching uniformity therein. The apparatus includes a remote plasma generator providing lots of radicals and ions from activating processing gas; a reaction chamber having an inflow port through which the activated processing gas; a susceptor, on which a wafer is settled, disposed in the reaction chamber; and an inductive-coupling plasma generator disposed in the reaction chamber, providing high-frequency energy to the activated processing gas. As radicals and ions are affluently generated enough to conduct an etching process, by means of the remote and inductive-coupling plasma sources, the reaction sprightly proceeds to improve the etching efficiency.
摘要翻译：半导体等离子体处理装置平滑通过电感耦合等离子体源频繁产生的侧自由基浓度的作用，增强其中的蚀刻均匀性。该装置包括远程等离子体发生器，其从激活处理气体提供大量的自由基和离子; 反应室，具有流入口，活化处理气体通过该流入口; 设置在反应室内的基座，其上沉积有晶片; 以及设置在反应室中的感应耦合等离子体发生器，为激活的处理气体提供高频能量。由于自由基和离子富足地产生足以进行蚀刻工艺，通过远程和电感耦合等离子体源，反应急剧进行以提高蚀刻效率。

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