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1. 发明授权

US08558268B2 Light emitting diode package 有权
标题翻译：发光二极管封装
公开(公告)号：US08558268B2
公开(公告)日：2013-10-15
申请号：US12343452
申请日：2008-12-23
申请人： Hyung Kun Kim , Ho Sun Paek , Suk Ho Jung , Jeong Wook Lee
发明人： Hyung Kun Kim , Ho Sun Paek , Suk Ho Jung , Jeong Wook Lee
IPC分类号： H01L33/00
CPC分类号： H01L25/0753 , H01L33/504 , H01L33/60 , H01L2224/45139 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： Provided is a light emitting diode (LED) package. The LED package includes a package main body, first and second electrode structures, first and second LED chips, and first and second resin packing parts. The package main body includes a concave portion and a barrier wall dividing the concave portion into at least first and second accommodation recesses. The first and second electrode structures are formed at the package main body and are exposed at bottom surfaces of the first and second accommodation recesses respectively. The first and second LED chips are electrically connected to the first and second electrode structures are respectively mounted on the bottom surfaces of the first and second accommodation recesses. The first and second resin packing parts include at least one fluorescent material and are formed in the first and second accommodation recesses for packing the first and second LED chips.
摘要翻译：提供了一种发光二极管（LED）封装。 LED封装包括封装主体，第一和第二电极结构，第一和第二LED芯片以及第一和第二树脂封装部件。包装主体包括凹部和将凹部分成至少第一和第二容纳凹部的阻挡壁。第一和第二电极结构形成在封装主体处，分别暴露在第一和第二容纳凹槽的底表面处。第一和第二LED芯片电连接到第一和第二电极结构分别安装在第一和第二容纳凹部的底表面上。第一和第二树脂包装部分包括至少一种荧光材料，并且形成在用于包装第一和第二LED芯片的第一和第二容纳凹部中。

2. 发明申请

US20100128461A1 LIGHT EMITTING DIODE PACKAGE 有权
标题翻译：发光二极管封装
公开(公告)号：US20100128461A1
公开(公告)日：2010-05-27
申请号：US12343452
申请日：2008-12-23
申请人： Hyung Kun KIM , Ho Sun Paek , Suk Ho Jung , Jeong Wook Lee
发明人： Hyung Kun KIM , Ho Sun Paek , Suk Ho Jung , Jeong Wook Lee
IPC分类号： F21V9/08
CPC分类号： H01L25/0753 , H01L33/504 , H01L33/60 , H01L2224/45139 , H01L2224/48091 , H01L2224/48247 , H01L2924/181 , H01L2924/3025 , H01L2924/00 , H01L2924/00012 , H01L2924/00014
摘要： Provided is a light emitting diode (LED) package. The LED package includes a package main body, first and second electrode structures, first and second LED chips, and first and second resin packing parts. The package main body includes a concave portion and a barrier wall dividing the concave portion into at least first and second accommodation recesses. The first and second electrode structures are formed at the package main body and are exposed at bottom surfaces of the first and second accommodation recesses respectively. The first and second LED chips are electrically connected to the first and second electrode structures are respectively mounted on the bottom surfaces of the first and second accommodation recesses. The first and second resin packing parts include at least one fluorescent material and are formed in the first and second accommodation recesses for packing the first and second LED chips.
摘要翻译：提供了一种发光二极管（LED）封装。 LED封装包括封装主体，第一和第二电极结构，第一和第二LED芯片以及第一和第二树脂封装部件。包装主体包括凹部和将凹部分成至少第一和第二容纳凹部的阻挡壁。第一和第二电极结构形成在封装主体处，分别暴露在第一和第二容纳凹槽的底表面处。第一和第二LED芯片电连接到第一和第二电极结构分别安装在第一和第二容纳凹部的底表面上。第一和第二树脂包装部分包括至少一种荧光材料，并且形成在用于包装第一和第二LED芯片的第一和第二容纳凹部中。

3. 发明申请

US20140160728A1 LIGHT EMITTING APPARATUS 审中-公开
标题翻译：发光装置
公开(公告)号：US20140160728A1
公开(公告)日：2014-06-12
申请号：US14236775
申请日：2011-08-17
申请人： Hyung Kun Kim , Suk Ho Chung , Ho Sun Paek , Jeong Wook Lee
发明人： Hyung Kun Kim , Suk Ho Chung , Ho Sun Paek , Jeong Wook Lee
IPC分类号： F21K99/00
CPC分类号： F21V9/30 , F21K9/64 , F21Y2113/13 , F21Y2115/10 , H01L25/0753 , H01L33/507 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting apparatus. According to one aspect of the present invention, the light emitting device comprises: a plurality of light emitting devices including a blue light emitting device emitting blue light and a UV light emitting device emitting ultraviolet light; and a wavelength conversion part arranged in the path of the light emitted from the plurality of light emitting devices, and provided with fluorescent substances to convert the wavelengths of the light emitted from the plurality of light emitting devices, wherein a fluorescent substance excited by and mixed with the blue light to obtain white light is arranged on a first area corresponding to the blue light emitting device, and at least a blue fluorescent substance is arranged on a second area corresponding to the UV light emitting device. When the light emitting apparatus according to the present invention is used, a combination of the light sources and the fluorescent substances within one module may be appropriately adopted to obtain both improved luminous efficacy and white light having a high color rendering index.
摘要翻译：本发明涉及一种发光装置。根据本发明的一个方面，发光器件包括：多个发光器件，包括发射蓝光的蓝色发光器件和发射紫外光的UV发光器件; 以及布置在从所述多个发光器件发射的光的路径中的波长转换部分，并且设置有用于转换从所述多个发光器件发射的光的波长的荧光物质，其中由所述多个发光器件激发和混合的荧光物质在对应于蓝色发光器件的第一区域上布置有获得白光的蓝色光，并且至少一个蓝色荧光物质被布置在与UV发光器件对应的第二区域上。当使用根据本发明的发光装置时，可以适当地采用一个模块内的光源和荧光物质的组合以获得改进的发光效率和具有高显色指数的白光。

4. 发明申请

US20090200565A1 GaN-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：基于GaN的半导体发光器件
公开(公告)号：US20090200565A1
公开(公告)日：2009-08-13
申请号：US12251872
申请日：2008-10-15
申请人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1−x−yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

5. 发明授权

US07790584B2 Method of growing semi-polar nitride single crystal thin film and method of manufacturing nitride semiconductor light emitting diode using the same 有权
标题翻译：生长半极性氮化物单晶薄膜的方法和使用其制造氮化物半导体发光二极管的方法
公开(公告)号：US07790584B2
公开(公告)日：2010-09-07
申请号：US12246594
申请日：2008-10-07
申请人： Ho Sun Paek , Jeong Wook Lee , Youn Joon Sung
发明人： Ho Sun Paek , Jeong Wook Lee , Youn Joon Sung
IPC分类号： H01L21/36
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007 , H01L33/16
摘要： A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single crystal base layer, and growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction. The growing of the semi-polar nitride single crystal thin film in a lateral direction includes primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane, and secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (11 22) plane.
摘要翻译：生长半极性氮化物单晶薄膜的方法。该方法包括在m面六方晶系单晶衬底上形成半极化氮化物单晶基底层，在半极化氮化物单晶基底层上形成电介质图案层，并生长半极化氮化物单晶薄膜在具有横向方向上具有电介质图案层的半极性氮化物单晶基底层上的膜。半极性氮化物单晶薄膜在横向上的生长包括主要在横向上生长半极性氮化物单晶薄膜，使得半极性氮化物单晶基底层上的生长面的一部分具有 a平面，并且在横向上二次生长半极性氮化物单晶薄膜，使得主要生长的半极性氮化物单晶薄膜的侧壁被组合成具有（1122）面。

6. 发明申请

US20090298214A1 METHOD OF GROWING NITRIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：生长氮化物单晶的方法及制造氮化物半导体发光装置的方法
公开(公告)号：US20090298214A1
公开(公告)日：2009-12-03
申请号：US12263873
申请日：2008-11-03
申请人： Ho Sun Paek , Sung Nam Lee , Jeong Wook Lee , Il Hyung Jung , Youn Joon Sung
发明人： Ho Sun Paek , Sung Nam Lee , Jeong Wook Lee , Il Hyung Jung , Youn Joon Sung
IPC分类号： H01L33/00 , H01L21/205
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L33/08 , H01L33/12
摘要： There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single crystal layer on a substrate; forming a dielectric pattern having an open area on the first nitride single crystal layer, the open area exposing a part of an upper surface of the first nitride single crystal layer; and growing a second nitride single crystal layer on the first nitride single crystal layer through the open area while the second nitride single crystal layer grows to be equal to or larger than a height of the dielectric pattern, wherein the height of the dielectric pattern is greater than a width of the open area so that dislocations in the second nitride single crystal layer move laterally, collide with side walls of the dielectric pattern, and are terminated.
摘要翻译：提供了生长氮化物单晶的方法。根据本发明的一个方面的生长氮化物单晶的方法可以包括：在衬底上生长第一氮化物单晶层; 在所述第一氮化物单晶层上形成具有开放区域的电介质图案，所述开放区域露出所述第一氮化物单晶层的上表面的一部分; 以及通过所述开放区域在所述第一氮化物单晶层上生长第二氮化物单晶层，而所述第二氮化物单晶层生长至等于或大于所述电介质图案的高度，其中所述电介质图案的高度较大比第二氮化物单晶层的位错横向移动，与介质图案的侧壁碰撞而终止。

7. 发明授权

US08378381B2 GaN-based semiconductor light emitting device 有权
标题翻译： GaN系半导体发光元件
公开(公告)号：US08378381B2
公开(公告)日：2013-02-19
申请号：US12890361
申请日：2010-09-24
申请人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1-x-yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

8. 发明授权

US07825428B2 GaN-based semiconductor light emitting device 有权
标题翻译： GaN系半导体发光元件
公开(公告)号：US07825428B2
公开(公告)日：2010-11-02
申请号：US12251872
申请日：2008-10-15
申请人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
发明人： Tan Sakong , Cheol Soo Sone , Ho Sun Paek , Suk Ho Yoon , Jeong Wook Lee
IPC分类号： H01L33/32
CPC分类号： H01L33/12 , H01L21/0254 , H01L33/06 , H01L33/34
摘要： There is provided a GaN-based semiconductor light emitting device including: a substrate; and an n-type GaN-based semiconductor layer, an active layer and a p-type GaN-based semiconductor layer sequentially deposited on the substrate, wherein the active layer includes: a first barrier layer including AlxInyGa1−x−yN, where 0
摘要翻译：提供一种GaN基半导体发光器件，包括：衬底; 以及依次沉积在所述衬底上的n型GaN基半导体层，有源层和p型GaN基半导体层，其中所述有源层包括：包含Al x In y Ga 1-x-y N的第一势垒层， x <1,0

9. 发明申请

US20090155947A1 METHOD OF GROWING SEMI-POLAR NITRIDE SINGLE CRYSTAL THIN FILM AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE USING THE SAME 有权
标题翻译：使用半阳极氮化物单晶薄膜的方法和使用其制造氮化物半导体发光二极管的方法
公开(公告)号：US20090155947A1
公开(公告)日：2009-06-18
申请号：US12246594
申请日：2008-10-07
申请人： Ho Sun Paek , Jeong Wook Lee , Youn Joon Sung
发明人： Ho Sun Paek , Jeong Wook Lee , Youn Joon Sung
IPC分类号： H01L33/00 , H01L21/205
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007 , H01L33/16
摘要： A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single crystal base layer, and growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction. The growing of the semi-polar nitride single crystal thin film in a lateral direction includes primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane, and secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (11 22) plane.
摘要翻译：生长半极性氮化物单晶薄膜的方法。该方法包括在m面六方晶系单晶衬底上形成半极化氮化物单晶基底层，在半极化氮化物单晶基底层上形成电介质图案层，并生长半极化氮化物单晶薄膜在具有横向方向上具有电介质图案层的半极性氮化物单晶基底层上的膜。半极性氮化物单晶薄膜在横向上的生长包括主要在横向上生长半极性氮化物单晶薄膜，使得半极性氮化物单晶基底层上的生长面的一部分具有 a平面，并且在横向上二次生长半极性氮化物单晶薄膜，使得主要生长的半极性氮化物单晶薄膜的侧壁被组合成具有（11 22）飞机。

10. 发明授权

US08148178B2 Method of growing nitride single crystal and method of manufacturing nitride semiconductor light emitting device 有权
标题翻译：氮化物单晶的生长方法及氮化物半导体发光元件的制造方法
公开(公告)号：US08148178B2
公开(公告)日：2012-04-03
申请号：US12263873
申请日：2008-11-03
申请人： Ho Sun Paek , Sung Nam Lee , Jeong Wook Lee , Il Hyung Jung , Youn Joon Sung
发明人： Ho Sun Paek , Sung Nam Lee , Jeong Wook Lee , Il Hyung Jung , Youn Joon Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L33/08 , H01L33/12
摘要： There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single crystal layer on a substrate; forming a dielectric pattern having an open area on the first nitride single crystal layer, the open area exposing a part of an upper surface of the first nitride single crystal layer; and growing a second nitride single crystal layer on the first nitride single crystal layer through the open area while the second nitride single crystal layer grows to be equal to or larger than a height of the dielectric pattern, wherein the height of the dielectric pattern is greater than a width of the open area so that dislocations in the second nitride single crystal layer move laterally, collide with side walls of the dielectric pattern, and are terminated.
摘要翻译：提供了生长氮化物单晶的方法。根据本发明的一个方面的生长氮化物单晶的方法可以包括：在衬底上生长第一氮化物单晶层; 在所述第一氮化物单晶层上形成具有开放区域的电介质图案，所述开放区域露出所述第一氮化物单晶层的上表面的一部分; 以及通过所述开放区域在所述第一氮化物单晶层上生长第二氮化物单晶层，而所述第二氮化物单晶层生长至等于或大于所述电介质图案的高度，其中所述电介质图案的高度较大比第二氮化物单晶层的位错横向移动，与介质图案的侧壁碰撞而终止。

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