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1. 发明授权

US07782416B2 Array substrate for liquid crystal display device using organic semiconductor material and method of fabricating the same 有权
标题翻译：使用有机半导体材料的液晶显示装置用阵列基板及其制造方法
公开(公告)号：US07782416B2
公开(公告)日：2010-08-24
申请号：US11644313
申请日：2006-12-21
申请人： Hyun-Sik Seo , Nack-Bong Choi , Min-Joo Kim
发明人： Hyun-Sik Seo , Nack-Bong Choi , Min-Joo Kim
IPC分类号： G02F1/136
CPC分类号： H01L51/0017 , G02F1/1368 , H01L27/283 , H01L51/055 , H01L51/107
摘要： An array substrate for a liquid crystal display device comprises a data line, source and drain electrodes disposed on a substrate; a pixel electrode disposed in a pixel region and contacting the drain electrode; an organic semiconductor layer disposed on the substrate; a gate insulating layer disposed on the substrate; a gate electrode disposed on the substrate; a first passivation layer of a photosensitive having a gate contact hole on the gate electrode, the gate contact hole exposing the gate electrode; and a gate line disposed on the first passivation layer, the gate line crossing the data line to define the pixel region and contacting the gate electrode through the gate contact hole, wherein the organic semiconductor layer, the gate insulating layer, and the gate electrode have a substantially same shape.
摘要翻译：液晶显示装置的阵列基板包括设置在基板上的数据线，源电极和漏电极; 像素电极，设置在像素区域中并与漏电极接触; 设置在所述基板上的有机半导体层; 设置在所述基板上的栅极绝缘层; 设置在所述基板上的栅电极; 在栅电极上具有栅极接触孔的感光体的第一钝化层，栅极接触孔暴露栅电极; 以及设置在所述第一钝化层上的栅极线，所述栅极线与所述数据线交叉以限定所述像素区域，并且通过所述栅极接触孔与所述栅电极接触，其中所述有机半导体层，所述栅极绝缘层和所述栅电极具有基本相同的形状。

2. 发明申请

US20070249122A1 Array substrate for liquid crystal display device using organic semiconductor material and method of fabricating the same 有权
标题翻译：使用有机半导体材料的液晶显示装置用阵列基板及其制造方法
公开(公告)号：US20070249122A1
公开(公告)日：2007-10-25
申请号：US11644313
申请日：2006-12-21
申请人： Hyun-Sik Seo , Nack-Bong Choi , Min-Joo Kim
发明人： Hyun-Sik Seo , Nack-Bong Choi , Min-Joo Kim
IPC分类号： H01L33/00 , H01L21/336
CPC分类号： H01L51/0017 , G02F1/1368 , H01L27/283 , H01L51/055 , H01L51/107
摘要： An array substrate for a liquid crystal display device comprises a data line disposed on a substrate that has a pixel region, and source and drain electrodes disposed on the substrate. The source electrode extends from the data line and is separated from the drain electrode. The array substrate for a liquid crystal display device further comprises a pixel electrode disposed in the pixel region, the pixel electrode contacting the drain electrode, an organic semiconductor layer disposed on the substrate, a gate insulating layer disposed on the substrate, and a gate electrode of a first metallic material disposed on the substrate. The array substrate for a liquid crystal display device also comprises a first passivation layer of a photosensitive organic insulating material that has a gate contact hole on the gate electrode, the gate contact hole exposing the gate electrode, and a gate line of a second metallic material disposed on the first passivation layer. The gate line crosses the data line to define the pixel region and contacts the gate electrode through the gate contact hole. The organic semiconductor layer, the gate insulating layer, and the gate electrode have a substantially same shape.
摘要翻译：用于液晶显示装置的阵列基板包括设置在具有像素区域的基板上的数据线，以及设置在基板上的源极和漏极。源电极从数据线延伸并与漏电极分离。用于液晶显示装置的阵列基板还包括设置在像素区域中的像素电极，与漏极接触的像素电极，设置在基板上的有机半导体层，设置在基板上的栅极绝缘层和栅电极设置在基板上的第一金属材料。用于液晶显示装置的阵列基板还包括在栅电极上具有栅极接触孔的感光有机绝缘材料的第一钝化层，暴露栅电极的栅极接触孔和第二金属材料的栅极线设置在第一钝化层上。栅极线与数据线交叉以限定像素区域，并通过栅极接触孔与栅电极接触。有机半导体层，栅极绝缘层和栅电极具有大致相同的形状。

3. 发明授权

US08071974B2 Organic thin film transistor including organic insulating layer and substrate including the same 有权
标题翻译：包括有机绝缘层的有机薄膜晶体管和包括其的衬底
公开(公告)号：US08071974B2
公开(公告)日：2011-12-06
申请号：US11153292
申请日：2005-06-15
申请人： Hyun-Sik Seo , Nack-Bong Choi
发明人： Hyun-Sik Seo , Nack-Bong Choi
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/052 , H01L51/0545
摘要： An organic thin film transistor includes a gate electrode having a first thickness on a substrate; an organic insulating layer on the gate electrode and the substrate, a portion of the organic insulating layer on the substrate having a second thickness, and a portion of the organic insulating layer on the gate electrode having a third thickness of about 2000 Å to 5000 Å; a semiconductor layer on the organic insulating layer; and source and drain electrodes on the organic insulating layer and contacting both side portions of the semiconductor layer.
摘要翻译：有机薄膜晶体管包括在基板上具有第一厚度的栅电极; 在栅电极和衬底上的有机绝缘层，衬底上的有机绝缘层的具有第二厚度的部分，以及栅电极上的有机绝缘层的一部分具有约2000到5000的第三厚度 ; 有机绝缘层上的半导体层; 以及有机绝缘层上的源电极和漏电极，并接触半导体层的两侧部分。

4. 发明授权

US08877547B2 Thin film transistor including organic semiconductor layer and substrate including the same 有权
标题翻译：包括有机半导体层的薄膜晶体管和包括其的基板
公开(公告)号：US08877547B2
公开(公告)日：2014-11-04
申请号：US13115477
申请日：2011-05-25
申请人： Hyun-Sik Seo , Nack-Bong Choi
发明人： Hyun-Sik Seo , Nack-Bong Choi
IPC分类号： H01L51/30 , H01L51/40 , H01L51/10 , H01L51/05 , H01L51/00
CPC分类号： H01L51/105 , H01L51/0011 , H01L51/0036 , H01L51/0052 , H01L51/0059 , H01L51/0516 , H01L51/0545
摘要： Provided is a thin film transistor including a gate electrode on a substrate; a gate insulating layer on the gate electrode; source and drain electrodes including first source and drain layers on the gate insulating layer, respectively, and spaced apart from each other, wherein at lease one of the first source and drain layers includes indium-tin-oxide doped with at least one Group III element; and an organic semiconductor layer on the gate insulating layer and contacting the first source and drain layers.
摘要翻译：提供了一种薄膜晶体管，其包括在基板上的栅电极; 栅电极上的栅极绝缘层; 源电极和漏电极分别包括在栅极绝缘层上的第一源极和漏极层，并彼此间隔开，其中至少一个第一源极和漏极层包括掺杂有至少一个III族元素的铟锡氧化物 ; 以及栅极绝缘层上的有机半导体层，并与第一源极和漏极层接触。

5. 发明授权

US08071422B2 Method of fabricating thin film transistor including organic semiconductor layer and substrate 有权
标题翻译：制造包括有机半导体层和衬底的薄膜晶体管的方法
公开(公告)号：US08071422B2
公开(公告)日：2011-12-06
申请号：US11455754
申请日：2006-06-20
申请人： Hyun-Sik Seo , Seung-Han Paek , Kyoung-Mook Lee , Dae-Hyun Nam , Nack-Bong Choi , Sung-Hwan Kim
发明人： Hyun-Sik Seo , Seung-Han Paek , Kyoung-Mook Lee , Dae-Hyun Nam , Nack-Bong Choi , Sung-Hwan Kim
IPC分类号： H01L51/40
CPC分类号： H01L51/0012 , H01L51/0003 , H01L51/0011 , H01L51/0037 , H01L51/0558
摘要： Disclosed is a display device including a thin film transistor. A method for forming the display device includes forming an organic semiconductor pattern in the presence of a magnetic field or an electric field. Due to the presence of a magnetic field or an electric field, the molecules of the organic semiconductor layer of the thin film transistor are substantially aligned in a predetermined direction.
摘要翻译：公开了一种包括薄膜晶体管的显示装置。用于形成显示装置的方法包括在存在磁场或电场的情况下形成有机半导体图案。由于存在磁场或电场，薄膜晶体管的有机半导体层的分子基本上沿预定方向排列。

6. 发明申请

US20080035917A1 Array substrate for liquid crystal display device and method of fabricating the same 有权
标题翻译：液晶显示装置用阵列基板及其制造方法
公开(公告)号：US20080035917A1
公开(公告)日：2008-02-14
申请号：US11819718
申请日：2007-06-28
申请人： Nack-Bong Choi , Hyun-Sik Seo
发明人： Nack-Bong Choi , Hyun-Sik Seo
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L51/0541 , G02F1/136286 , H01L27/283 , H01L51/0021 , H01L51/055
摘要： An array substrate for a liquid crystal display device includes: a data line on a substrate; a source electrode contacting the data line, a drain electrode spaced apart from the source electrode and a pixel electrode connected to the drain electrode, wherein the source electrode, the drain electrode and the pixel electrode each including a transparent conductive material; an organic semiconductor layer contacting the source and drain electrodes; a gate insulating layer on the organic semiconductor layer; a gate electrode on the gate insulating layer; a first passivation layer on the gate electrode, the first passivation layer having a gate contact hole exposing the gate electrode; and a gate line on the first passivation layer, the gate line connected to the gate electrode through the gate contact hole.
摘要翻译：液晶显示装置用阵列基板包括：基板上的数据线; 与数据线接触的源电极，与源电极间隔开的漏电极和与漏电极连接的像素电极，其中源电极，漏电极和像素电极各自包括透明导电材料; 与源极和漏极接触的有机半导体层; 有机半导体层上的栅极绝缘层; 栅绝缘层上的栅电极; 所述栅电极上的第一钝化层，所述第一钝化层具有暴露所述栅电极的栅极接触孔; 以及在第一钝化层上的栅极线，栅极线通过栅极接触孔连接到栅电极。

7. 发明申请

US20060226441A1 Thin film transistor including organic semiconductor layer and substrate including the same 有权
标题翻译：包括有机半导体层的薄膜晶体管和包括其的衬底
公开(公告)号：US20060226441A1
公开(公告)日：2006-10-12
申请号：US11397555
申请日：2006-04-05
申请人： Hyun-Sik Seo , Nack-Bong Choi
发明人： Hyun-Sik Seo , Nack-Bong Choi
IPC分类号： H01L31/109
CPC分类号： H01L51/105 , H01L51/0011 , H01L51/0036 , H01L51/0052 , H01L51/0059 , H01L51/0516 , H01L51/0545
摘要： Provided is a thin film transistor including a gate electrode on a substrate; a gate insulating layer on the gate electrode; source and drain electrodes including first source and drain layers on the gate insulating layer, respectively, and spaced apart from each other, wherein at lease one of the first source and drain layers includes indium-tin-oxide doped with at least one Group III element; and an organic semiconductor layer on the gate insulating layer and contacting the first source and drain layers.
摘要翻译：提供了一种薄膜晶体管，其包括在基板上的栅电极; 栅电极上的栅极绝缘层; 源电极和漏电极分别包括在栅极绝缘层上的第一源极和漏极层，并彼此间隔开，其中至少一个第一源极和漏极层包括掺杂有至少一个III族元素的铟锡氧化物 ; 以及栅极绝缘层上的有机半导体层，并与第一源极和漏极层接触。

8. 发明授权

US07998787B2 Thin film transistor including organic semiconductor layer and substrate including the same 有权
标题翻译：包括有机半导体层的薄膜晶体管和包括其的衬底
公开(公告)号：US07998787B2
公开(公告)日：2011-08-16
申请号：US11397555
申请日：2006-04-05
申请人： Hyun-Sik Seo , Nack-Bong Choi
发明人： Hyun-Sik Seo , Nack-Bong Choi
IPC分类号： H01L51/40
CPC分类号： H01L51/105 , H01L51/0011 , H01L51/0036 , H01L51/0052 , H01L51/0059 , H01L51/0516 , H01L51/0545
摘要： Provided is a thin film transistor including a gate electrode on a substrate; a gate insulating layer on the gate electrode; source and drain electrodes including first source and drain layers on the gate insulating layer, respectively, and spaced apart from each other, wherein at lease one of the first source and drain layers includes indium-tin-oxide doped with at least one Group III element; and an organic semiconductor layer on the gate insulating layer and contacting the first source and drain layers.
摘要翻译：提供了一种薄膜晶体管，其包括在基板上的栅电极; 栅电极上的栅极绝缘层; 源电极和漏电极分别包括在栅极绝缘层上的第一源极和漏极层，并彼此间隔开，其中至少一个第一源极和漏极层包括掺杂有至少一个III族元素的铟锡氧化物 ; 以及栅极绝缘层上的有机半导体层，并与第一源极和漏极层接触。

9. 发明授权

US07773193B2 Method of fabricating an LCD device using flexible substrates 有权
标题翻译：使用柔性基板制造LCD器件的方法
公开(公告)号：US07773193B2
公开(公告)日：2010-08-10
申请号：US11451643
申请日：2006-06-13
申请人： Hyun-Sik Seo , Seung-Han Paek , Dae-Hyun Nam , Nack-Bong Choi
发明人： Hyun-Sik Seo , Seung-Han Paek , Dae-Hyun Nam , Nack-Bong Choi
IPC分类号： G02F1/13 , G02F1/1333
CPC分类号： G02F1/133305 , G02F1/1303 , G02F2201/46 , Y10T29/49826
摘要： A jig for a flexible substrate comprises a glass plate having a concave portion and a plurality of grooves at periphery of the concave portion. The jig further comprises a plurality of fixing elements inserted in the plurality of grooves to fix the flexible substrate to the glass plate.
摘要翻译：柔性基板的夹具包括在凹部的周围具有凹部和多个槽的玻璃板。夹具还包括插入多个槽中的多个固定元件，以将柔性基板固定到玻璃板上。

10. 发明授权

US07754523B2 Method for fabricating organic thin film transistor and method for fabricating liquid crystal display device using the same 有权
标题翻译：制造有机薄膜晶体管的方法及使用其制造液晶显示装置的方法
公开(公告)号：US07754523B2
公开(公告)日：2010-07-13
申请号：US11148293
申请日：2005-06-09
申请人： Hyun-Sik Seo , Dae-Hyun Nam , Nack-Bong Choi
发明人： Hyun-Sik Seo , Dae-Hyun Nam , Nack-Bong Choi
IPC分类号： H01L21/40
CPC分类号： H01L51/0018 , G02F1/1368 , H01L51/0017 , H01L51/0052 , H01L51/0516 , H01L51/052 , H01L51/0525 , H01L51/0545 , H01L51/107
摘要： A method for fabricating an organic thin film transistor includes forming a gate electrode on a substrate, forming a gate insulating layer on the substrate including the gate electrode, forming an organic active pattern on the gate insulating layer using a rear exposing process, and forming source and drain electrodes on the organic active pattern.
摘要翻译：一种制造有机薄膜晶体管的方法，包括在衬底上形成栅电极，在包括栅电极的衬底上形成栅极绝缘层，使用后曝光工艺在栅极绝缘层上形成有机活性图案，以及形成源极和有机活性图案上的漏电极。

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