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1. 发明授权

US07664357B2 Vertical-type photonic-crystal plate and optical device assembly 有权
标题翻译：垂直型光子晶体板和光学器件组件
公开(公告)号：US07664357B2
公开(公告)日：2010-02-16
申请号：US11945551
申请日：2007-11-27
申请人： Hyun Woo Song , Sang Choon Ko
发明人： Hyun Woo Song , Sang Choon Ko
IPC分类号： G02B6/26 , G02B6/30 , G02B6/122
CPC分类号： G02B6/1225 , B82Y20/00 , G02B6/4204 , G02B6/4246
摘要： Provided are a photonic-crystal plate that forms an optical waveguide and an optical device assembly using the same, and more particularly, a vertical-type photonic-crystal plate and an optical device assembly configured to be easily integrated with surface-emitting light source devices and surface-receiving light detector devices. The photonic-crystal plate includes a plurality of cylindrical through holes formed in a thickness direction and arranged in a periodic crystal lattice structure. The plate further includes: a main crystal lattice defect that forms a main optical waveguide for passing lights in a direction perpendicular to the photonic-crystal plate; and a sub-crystal lattice defect that forms a sub-optical waveguide for causing light in a specific wavelength band among the lights passing through the main optical waveguide to be optically coupled and passing the coupled light in the direction perpendicular to the photonic-crystal plate.
摘要翻译：提供一种形成光波导的光子晶体板和使用该光波导的光学器件组件，更具体地，涉及一种垂直型光子晶体板和光学器件组件，其被配置为容易地与表面发射光源器件和表面接收光检测器装置。光子晶体板包括沿厚度方向形成并以周期性晶格结构排列的多个圆柱形通孔。该板还包括：主晶格缺陷，其形成用于使光沿垂直于光子晶体板的方向通过的主光波导; 以及亚晶格缺陷，其形成用于使通过主光波导的光中的特定波长带的光光耦合并使耦合的光沿垂直于光子晶体板的方向通过的子光波导。

2. 发明申请

US20090188110A1 MICRO HEAT PIPE WITH POLIGONAL CROSS-SECTION MANUFACTURED VIA EXTRUSION OR DRAWING 审中-公开
标题翻译：微型热管，通过挤压或拉拔制造出具有极性交叉部分
公开(公告)号：US20090188110A1
公开(公告)日：2009-07-30
申请号：US12414595
申请日：2009-03-30
申请人： Seok Hwan Moon , Ho Gyeong Yun , Sang Choon Ko , Gunn Hwang , Tae Goo Choy , Chi Hoon Jun , Youn Tae Kim
发明人： Seok Hwan Moon , Ho Gyeong Yun , Sang Choon Ko , Gunn Hwang , Tae Goo Choy , Chi Hoon Jun , Youn Tae Kim
IPC分类号： B21D53/02
CPC分类号： B23P15/26 , B21C23/085 , B21C37/151 , B21C37/155 , B23P2700/09 , F28D15/0233 , F28D2015/0225 , F28F1/022 , H01L23/427 , H01L2924/0002 , Y10T29/49353 , H01L2924/00
摘要： A method for fabricating a metal micro heat pipe with a polygonal cross-section to allow working fluid to flow by capillary force generated at edges of the polygonal of the micro heat pipe. The polygonal cross-section is formed of a single metal layer via a single drawing process. The micro heat pipe is formed of a single metal plate.
摘要翻译：一种用于制造具有多边形横截面的金属微热管的方法，以允许工作流体通过在微热管的多边形的边缘处产生的毛细管力流动。多边形横截面通过单个拉丝工艺由单个金属层形成。微热管由单个金属板形成。

3. 发明授权

US08772833B2 Power semiconductor device and fabrication method thereof 失效
标题翻译：功率半导体器件及其制造方法
公开(公告)号：US08772833B2
公开(公告)日：2014-07-08
申请号：US13592560
申请日：2012-08-23
申请人： Woo Jin Chang , Jong Won Lim , Ho Kyun Ahn , Sang Choon Ko , Sung Bum Bae , Chull Won Ju , Young Rak Park , Jae Kyoung Mun , Eun Soo Nam
发明人： Woo Jin Chang , Jong Won Lim , Ho Kyun Ahn , Sang Choon Ko , Sung Bum Bae , Chull Won Ju , Young Rak Park , Jae Kyoung Mun , Eun Soo Nam
IPC分类号： H01L29/15
CPC分类号： H01L29/66901 , H01L29/2003 , H01L29/401 , H01L29/402 , H01L29/42316 , H01L29/66462 , H01L29/7786
摘要： Disclosed are a power semiconductor device and a method of fabricating the same which can increase a breakdown voltage of the device through a field plate formed between a gate electrode and a drain electrode and achieve an easier manufacturing process at the same time. The power semiconductor device according to an exemplary embodiment of the present disclosure includes a source electrode and a drain electrode formed on a substrate; a dielectric layer formed between the source electrode and the drain electrode to have a lower height than heights of the two electrodes and including an etched part exposing the substrate; a gate electrode formed on the etched part; a field plate formed on the dielectric layer between the gate electrode and the drain electrode; and a metal configured to connect the field plate and the source electrode.
摘要翻译：公开了功率半导体器件及其制造方法，其可以通过形成在栅电极和漏电极之间的场板来增加器件的击穿电压，并且同时实现更容易的制造工艺。根据本公开的示例性实施例的功率半导体器件包括形成在衬底上的源电极和漏电极; 形成在所述源电极和所述漏电极之间的电介质层具有比所述两个电极的高度低的高度，并且包括暴露所述衬底的蚀刻部分; 形成在蚀刻部分上的栅电极; 形成在栅电极和漏电极之间的电介质层上的场板; 以及配置成连接场板和源电极的金属。

4. 发明申请

US20130069127A1 FIELD EFFECT TRANSISTOR AND FABRICATION METHOD THEREOF 审中-公开
标题翻译：场效应晶体管及其制造方法
公开(公告)号：US20130069127A1
公开(公告)日：2013-03-21
申请号：US13556377
申请日：2012-07-24
申请人： Ho Kyun AHN , Jong-Won Lim , Sung Bum Bae , Sang Choon Ko , Young Rak Park , Woo Jin Chang , Jae Kyoung Mun , Eun Soo Nam , Jeong Jin Kim , Chull Won Ju
发明人： Ho Kyun AHN , Jong-Won Lim , Sung Bum Bae , Sang Choon Ko , Young Rak Park , Woo Jin Chang , Jae Kyoung Mun , Eun Soo Nam , Jeong Jin Kim , Chull Won Ju
IPC分类号： H01L29/78 , H01L21/20
CPC分类号： H01L29/7786 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/66462 , H01L29/66863 , H01L29/8128
摘要： A method for fabricating a field effect transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a cap layer, an ohmic metal layer and an insulating layer on a substrate; forming multilayered photoresists on the insulating layer; patterning the multilayered photoresists to form a photoresist pattern including a first opening for gate electrode and a second opening for field electrode; etching the insulating layer by using the photoresist pattern as an etching mask so that the insulating layer in the first opening is etched more deeply and the cap layer is exposed through the first opening; etching the cap layer exposed by etching the insulating layer through the first opening to form a gate recess region; and depositing a metal on the gate recess region and the etched insulating layer to form a gate-field electrode layer.
摘要翻译：根据本公开的示例性实施例的制造场效应晶体管的方法包括：在衬底上形成有源层，覆盖层，欧姆金属层和绝缘层; 在所述绝缘层上形成多层光致抗蚀剂; 图案化多层光致抗蚀剂以形成包括用于栅电极的第一开口和场电极的第二开口的光致抗蚀剂图案; 通过使用光致抗蚀剂图案作为蚀刻掩模来蚀刻绝缘层，使得第一开口中的绝缘层被更深地蚀刻并且盖层通过第一开口暴露; 通过蚀刻绝缘层通过第一开口蚀刻暴露的盖层，以形成栅极凹陷区域; 以及在所述栅极凹部区域和所述蚀刻绝缘层上沉积金属以形成栅极电极层。

5. 发明申请

US20100132467A1 HIGH-SENSITIVITY Z-AXIS VIBRATION SENSOR AND METHOD OF FABRICATING THE SAME 失效
标题翻译：高灵敏度Z轴振动传感器及其制造方法
公开(公告)号：US20100132467A1
公开(公告)日：2010-06-03
申请号：US12509360
申请日：2009-07-24
申请人： Sang Choon Ko , Chi Hoon Jun , Byoung Gon Yu , Chang Auck Choi
发明人： Sang Choon Ko , Chi Hoon Jun , Byoung Gon Yu , Chang Auck Choi
IPC分类号： G01P15/125 , H01L21/306
CPC分类号： G01P15/0802 , G01H11/06 , G01P1/023 , G01P15/125 , H04R19/005
摘要： Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed. Moreover, since the high-sensitivity MEMS-type z-axis vibration sensor has a higher vibration sensibility than MEMS-type z-axis vibration sensor of the same size, it can be useful in electronic devices which are gradually decreasing in size.
摘要翻译：提供了一种高灵敏度的MEMS型z轴振动传感器，其可以通过将掺杂的上硅层和上电极之间的电容从正向或者反向偏移来感测z轴振动，当中心质量为掺杂多晶硅层由于z轴振动而移动。特别地，由于掺杂的上硅层的一部分另外连接到掺杂多晶硅层的中心质量块，因此由掺杂多晶硅层的中心质量造成的误差最小化，可以敏感地响应低的振动弱频率如地震波。因此，由于高灵敏度的MEMS型z轴振动传感器对低频带中的少量振动敏感地作出响应，因此可以应用于地震仪中，以便感测具有极小振动频率的低频地震波和低振动速度。此外，由于高灵敏度的MEMS型z轴振动传感器具有比相同尺寸的MEMS型z轴振动传感器更高的振动灵敏度，所以在逐渐减小的电子设备中是有用的。

6. 发明授权

US08319397B2 Piezoelectric power generator 有权
标题翻译：压电发电机
公开(公告)号：US08319397B2
公开(公告)日：2012-11-27
申请号：US12862577
申请日：2010-08-24
申请人： Sang Choon Ko , Chang Han Je , Ho Jun Ryu , Sung Sik Lee , Chi Hoon Jun
发明人： Sang Choon Ko , Chang Han Je , Ho Jun Ryu , Sung Sik Lee , Chi Hoon Jun
IPC分类号： H01L41/08
CPC分类号： H01L41/1138 , B60C23/0411 , H01L41/1136 , H02N2/186
摘要： Provided is a small piezoelectric power generator applied to a wireless sensor network system of a tire pressure monitoring system (TPMS) for monitoring an internal environment of a tire such as variation in air pressure in the tire. In particular, when the system, in which air pressure, temperature and acceleration sensors are mounted, installed in the tire is operated in the TPMS for an automobile, a small piezoelectric power generator for the TPMS can be used as a power source in place of a conventional battery. The piezoelectric power generator includes a substrate having an electrode for transmitting power to the exterior, a metal plate formed on the substrate, and a piezoelectric body disposed on the metal plate and transmitting the power generated by a piezoelectric material to the electrode.
摘要翻译：提供了一种应用于轮胎压力监测系统（TPMS）的无线传感器网络系统的小型压电发电机，用于监测轮胎的内部环境，例如轮胎中的空气压力的变化。特别地，当安装在轮胎中的气压，温度和加速度传感器的系统在用于汽车的TPMS中运行时，用于TPMS的小压电发电机可以用作电源来代替常规电池。压电发电机包括具有用于向外部传输电力的电极的基板，形成在基板上的金属板，以及设置在金属板上并将由压电材料产生的电力传递到电极的压电体。

7. 发明授权

US08047074B2 Humidity sensor and method of manufacturing the same 有权
标题翻译：湿度传感器及其制造方法
公开(公告)号：US08047074B2
公开(公告)日：2011-11-01
申请号：US12617701
申请日：2009-11-12
申请人： Chi Hoon Jun , Sang Choon Ko , Chang Auck Choi , Byoung Gon Yu
发明人： Chi Hoon Jun , Sang Choon Ko , Chang Auck Choi , Byoung Gon Yu
IPC分类号： G01N27/12
CPC分类号： G01N27/121
摘要： Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.The humidity sensor includes a substrate, an open cavity with an open upper portion formed to have a depth and a width in the substrate, a plurality of electrode pads formed on the substrate, a heater connected to one pad of the electrode pads at one end, and connected to another pad of the electrode pads at the other end to be suspended over the open cavity, a plurality of sensing electrodes formed on the same plane as the heater, and suspended over the open cavity to output a sensed signal to the electrode pads, a humidity sensitive layer formed on the heater and the sensing electrodes, suspended over the open cavity, and changed in characteristic according to the humidity, and an ambient temperature measurement part configured to measure the temperature around the humidity sensor, wherein the temperature is used as a reference temperature to control a heating temperature of the heater.
摘要翻译：提供了一种湿度传感器及其制造方法。湿度传感器灵敏度高，响应时间快，温度特性好，滞后小，耐久性好。此外，对于湿度传感器，湿度敏感层可以由各种材料形成。湿度传感器可以大规模制造。湿度传感器包括基底，具有形成为在基底中具有深度和宽度的敞开上部的开口腔，形成在基底上的多个电极垫，一端连接到电极垫的一个垫并且在另一端连接到电极焊盘的另一焊盘以悬挂在开放空腔上，多个感测电极形成在与加热器相同的平面上，并且悬挂在开放空腔上以将感测到的信号输出到电极衬垫，形成在加热器上的湿度敏感层和悬挂在开放空腔上的感测电极，并且根据湿度改变特性;以及环境温度测量部件，被配置为测量湿度传感器周围的温度，其中温度为用作参考温度来控制加热器的加热温度。

8. 发明申请

US20100147070A1 HUMIDITY SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：湿度传感器及其制造方法
公开(公告)号：US20100147070A1
公开(公告)日：2010-06-17
申请号：US12617701
申请日：2009-11-12
申请人： Chi Hoon JUN , Sang Choon Ko , Chang Auck Choi , Byoung Gon Yu
发明人： Chi Hoon JUN , Sang Choon Ko , Chang Auck Choi , Byoung Gon Yu
IPC分类号： G01N19/10 , B05D5/12 , B44C1/22
CPC分类号： G01N27/121
摘要： Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.The humidity sensor includes a substrate, an open cavity with an open upper portion formed to have a depth and a width in the substrate, a plurality of electrode pads formed on the substrate, a heater connected to one pad of the electrode pads at one end, and connected to another pad of the electrode pads at the other end to be suspended over the open cavity, a plurality of sensing electrodes formed on the same plane as the heater, and suspended over the open cavity to output a sensed signal to the electrode pads, a humidity sensitive layer formed on the heater and the sensing electrodes, suspended over the open cavity, and changed in characteristic according to the humidity, and an ambient temperature measurement part configured to measure the temperature around the humidity sensor, wherein the temperature is used as a reference temperature to control a heating temperature of the heater.
摘要翻译：提供了一种湿度传感器及其制造方法。湿度传感器灵敏度高，响应时间快，温度特性好，滞后小，耐久性好。此外，对于湿度传感器，湿度敏感层可以由各种材料形成。湿度传感器可以大规模制造。湿度传感器包括基底，具有形成为在基底中具有深度和宽度的敞开上部的开口腔，形成在基底上的多个电极垫，一端连接到电极垫的一个垫并且在另一端连接到电极焊盘的另一焊盘以悬挂在开放空腔上，多个感测电极形成在与加热器相同的平面上，并且悬挂在开放空腔上以将感测到的信号输出到电极衬垫，形成在加热器上的湿度敏感层和悬挂在开放空腔上的感测电极，并且根据湿度改变特性;以及环境温度测量部件，被配置为测量湿度传感器周围的温度，其中温度为用作参考温度来控制加热器的加热温度。

9. 发明授权

US08723222B2 Nitride electronic device and method for manufacturing the same 有权
标题翻译：氮化物电子器件及其制造方法
公开(公告)号：US08723222B2
公开(公告)日：2014-05-13
申请号：US13548522
申请日：2012-07-13
申请人： Sung Bum Bae , Eun Soo Nam , Jae Kyoung Mun , Sung Bock Kim , Hae Cheon Kim , Chull Won Ju , Sang Choon Ko , Jong-Won Lim , Ho Kyun Ahn , Woo Jin Chang , Young Rak Park
发明人： Sung Bum Bae , Eun Soo Nam , Jae Kyoung Mun , Sung Bock Kim , Hae Cheon Kim , Chull Won Ju , Sang Choon Ko , Jong-Won Lim , Ho Kyun Ahn , Woo Jin Chang , Young Rak Park
IPC分类号： H01L31/102
CPC分类号： H01L29/66446 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02647 , H01L21/8252 , H01L27/0605 , H01L27/0883
摘要： The present disclosure relates to a nitride electronic device and a method for manufacturing the same, and particularly, to a nitride electronic device and a method for manufacturing the same that can implement various types of nitride integrated structures on the same substrate through a regrowth technology (epitaxially lateral over-growth: ELOG) of a semi-insulating gallium nitride (GaN) layer used in a III-nitride semiconductor electronic device including Group III elements such as gallium (Ga), aluminum (Al) and indium (In) and nitrogen.
摘要翻译：本发明涉及一种氮化物电子器件及其制造方法，特别涉及一种氮化物电子器件及其制造方法，该氮化物电子器件及其制造方法可以通过再生技术在同一衬底上实现各种氮化物一体化结构（用于包括III族元素如镓（Ga），铝（Al）和铟（In））和氮（III）的III族氮化物半导体电子器件中的半绝缘氮化镓（GaN）层的外延横向过度生长：ELOG）。

10. 发明申请

US20110140578A1 PIEZOELECTRIC POWER GENERATOR 有权
标题翻译：压电发电机
公开(公告)号：US20110140578A1
公开(公告)日：2011-06-16
申请号：US12862577
申请日：2010-08-24
申请人： Sang Choon Ko , Chang Han Je , Ho Jun Ryu , Sung Sik Lee , Chi Hoon Jun
发明人： Sang Choon Ko , Chang Han Je , Ho Jun Ryu , Sung Sik Lee , Chi Hoon Jun
IPC分类号： H02N2/18
CPC分类号： H01L41/1138 , B60C23/0411 , H01L41/1136 , H02N2/186
摘要： Provided is a small piezoelectric power generator applied to a wireless sensor network system of a tire pressure monitoring system (TPMS) for monitoring an internal environment of a tire such as variation in air pressure in the tire. In particular, when the system, in which air pressure, temperature and acceleration sensors are mounted, installed in the tire is operated in the TPMS for an automobile, a small piezoelectric power generator for the TPMS can be used as a power source in place of a conventional battery. The piezoelectric power generator includes a substrate having an electrode for transmitting power to the exterior, a metal plate formed on the substrate, and a piezoelectric body disposed on the metal plate and transmitting the power generated by a piezoelectric material to the electrode.
摘要翻译：提供了一种应用于轮胎压力监测系统（TPMS）的无线传感器网络系统的小型压电发电机，用于监测轮胎的内部环境，例如轮胎中的空气压力的变化。特别地，当安装在轮胎中的气压，温度和加速度传感器的系统在用于汽车的TPMS中运行时，用于TPMS的小压电发电机可以用作电源来代替常规电池。压电发电机包括具有用于向外部传输电力的电极的基板，形成在基板上的金属板，以及设置在金属板上的压电体，并将由压电材料产生的电力传递到电极。

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