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1. 发明授权

US09315658B2 Alkyl(meth)acrylate-based thermoplastic resin composition and thermoplastic resin with high scratch resistance and low yellowness 有权
标题翻译：（甲基）丙烯酸烷基酯类热塑性树脂组合物和具有高耐擦伤性和低黄度的热塑性树脂
公开(公告)号：US09315658B2
公开(公告)日：2016-04-19
申请号：US14009486
申请日：2012-07-27
申请人： Hyun Seok Yang , Dae Woo Lee , Han Jong You , Chang Hun Han , Seong Lyong Kim
发明人： Hyun Seok Yang , Dae Woo Lee , Han Jong You , Chang Hun Han , Seong Lyong Kim
IPC分类号： C08L33/12 , C08L33/10 , C08F220/10 , C08F279/02 , C08L33/16 , C08L51/04
CPC分类号： C08L33/12 , C08F220/10 , C08F279/02 , C08F279/04 , C08L33/16 , C08L51/04 , C08L55/02 , C08F220/14
摘要： Disclosed are an alkyl(meth)acrylate-based thermoplastic resin composition and a thermoplastic resin with modified scratch resistance and yellowness. The alkyl(meth)acrylate-based thermoplastic resin composition provides improved scratch resistance and low yellowness index while maintaining transparency, flowability, and impact strength, even when the total content of the vinyl cyan-based monomer contained in the resin composition is reduced to a level unattainable by conventional techniques, and the content of the alkyl(meth)acrylate-based monomer is increased.
摘要翻译：公开了（甲基）丙烯酸烷基酯类热塑性树脂组合物和具有改善的耐划伤性和黄色性的热塑性树脂。（甲基）丙烯酸烷基酯类热塑性树脂组合物，即使将树脂组合物中所含的乙烯基类青色系单体的总含量降低至一种（甲基）丙烯酸烷基酯类热塑性树脂组合物的总含量，也能够保持透明性，流动性，冲击强度，通过常规技术难以达到的水平，并且（甲基）丙烯酸烷基酯类单体的含量增加。

2. 发明申请

US20140039104A1 ALKYL(METH)ACRYLATE-BASED THERMOPLASTIC RESIN COMPOSITION AND THERMOPLASTIC RESIN WITH HIGH SCRATCH RESISTANCE AND LOW YELLOWNESS 有权
标题翻译：基于丙烯酸（甲基）丙烯酸酯的热塑性树脂组合物和具有高耐刮擦性和低亮度的热塑性树脂
公开(公告)号：US20140039104A1
公开(公告)日：2014-02-06
申请号：US14009486
申请日：2012-07-27
申请人： Hyun Seok Yang , Dae Woo Lee , Han Jong You , Chang Hun Han , Seong Lyong Kim
发明人： Hyun Seok Yang , Dae Woo Lee , Han Jong You , Chang Hun Han , Seong Lyong Kim
IPC分类号： C08L33/12 , C08F220/10
CPC分类号： C08L33/12 , C08F220/10 , C08F279/02 , C08F279/04 , C08L33/16 , C08L51/04 , C08L55/02 , C08F220/14
摘要： Disclosed are an alkyl(meth)acrylate-based thermoplastic resin composition and a thermoplastic resin with modified scratch resistance and yellowness. The alkyl(meth)acrylate-based thermoplastic resin composition provides improved scratch resistance and low yellowness index while maintaining transparency, flowability, and impact strength, even when the total content of the vinyl cyan-based monomer contained in the resin composition is reduced to a level unattainable by conventional techniques, and the content of the alkyl(meth)acrylate-based monomer is increased.
摘要翻译：公开了（甲基）丙烯酸烷基酯类热塑性树脂组合物和具有改善的耐划伤性和黄色性的热塑性树脂。（甲基）丙烯酸烷基酯类热塑性树脂组合物，即使将树脂组合物中所含的乙烯基类青色系单体的总含量降低至一种（甲基）丙烯酸烷基酯类热塑性树脂组合物的总含量，也能够保持透明性，流动性，冲击强度，通过常规技术难以达到的水平，并且（甲基）丙烯酸烷基酯类单体的含量增加。

3. 发明授权

US07863359B2 Method of preparing transparent copolymer resin, transparent copolymer resin prepared by the method, and resin blend composition including the transparent copolymer resin 有权
标题翻译：制备透明共聚物树脂的方法，通过该方法制备的透明共聚物树脂和包含透明共聚物树脂的树脂共混物组合物
公开(公告)号：US07863359B2
公开(公告)日：2011-01-04
申请号：US11301190
申请日：2005-12-12
申请人： Seeun Lee , Chang Hun Han , Daewoo Lee
发明人： Seeun Lee , Chang Hun Han , Daewoo Lee
IPC分类号： C07F9/09
CPC分类号： C08F220/14 , C08F2/02
摘要： Provided are a method of preparing a transparent copolymer resin by continuous bulk polymerization of a polymerization mixture obtained by adding a phenol-based antioxidant and/or a phosphate-based antioxidant, a chain transfer agent, and an organic peroxide initiator to a monomer mixture including a styrene monomer, an acrylate monomer, and an acrylonitrile monomer, and a transparent copolymer resin prepared by the method, having good chemical resistance, fluidity, and discoloration resistance.
摘要翻译：提供了通过将苯酚类抗氧化剂和/或磷酸酯类抗氧化剂，链转移剂和有机过氧化物引发剂添加到单体混合物中而获得的聚合混合物的连续本体聚合制备透明共聚物树脂的方法，所述单体混合物包括苯乙烯单体，丙烯酸酯单体和丙烯腈单体，以及通过该方法制备的具有良好的耐化学性，流动性和耐变色性的透明共聚物树脂。

4. 发明授权

US07859072B2 Image sensor and method for manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07859072B2
公开(公告)日：2010-12-28
申请号：US11839236
申请日：2007-08-15
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L21/00 , H01L31/0216
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14623
摘要： An image sensor and a fabricating method thereof are provided. The image sensor includes a plurality of pixels disposed in an active region and dummy pixels disposed in a peripheral region. An interlayer dielectric layer has a first thickness in the active region and a second thickness thinner than the first thickness in the peripheral region. Color filters are disposed in the active region, and a light blocking member is disposed in the peripheral region. There is substantially no step difference between the color filters and the light blocking member.
摘要翻译：提供了图像传感器及其制造方法。图像传感器包括设置在有源区域中的多个像素和设置在周边区域中的虚拟像素。层间绝缘层在有源区具有第一厚度，在周边区具有比第一厚度薄的第二厚度。彩色滤光片设置在有源区域中，并且遮光构件设置在周边区域中。滤色器和遮光构件之间基本上没有差别。

5. 发明授权

US07679183B2 Electronic cooling device and fabrication method thereof 失效
标题翻译：电子冷却装置及其制造方法
公开(公告)号：US07679183B2
公开(公告)日：2010-03-16
申请号：US12001679
申请日：2007-12-11
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L23/34
CPC分类号： H01L23/38 , H01L27/14618 , H01L27/16 , H01L2924/0002 , H01L2924/00
摘要： Provided are an electronic cooling device and a fabrication method thereof. The method may include forming an insulating layer on a semiconductor substrate, forming first and second silicide layers on the insulating layer, forming separate paired p-type and n-type semiconductors on each of the first and second silicide layers, forming a first interlayer dielectric (ILD) layer on the p-type and n-type semiconductors, exposing top surfaces of the n-type and p-type semiconductors, forming a third silicide layer on one semiconductor on each of the first and second silicide layers, forming a second ILD layer on the third silicide layer, and etching the second and first ILD layers to form contact holes exposing top surfaces of the first and second silicide layers.
摘要翻译：提供一种电子冷却装置及其制造方法。该方法可以包括在半导体衬底上形成绝缘层，在绝缘层上形成第一和第二硅化物层，在第一和第二硅化物层的每一个上形成单独的成对p型和n型半导体，形成第一层间电介质（ILD）层，暴露n型和p型半导体的顶表面，在第一和第二硅化物层中的每一个上的一个半导体上形成第三硅化物层，形成第二硅化物层 ILD层，并且蚀刻第二和第一ILD层以形成暴露第一和第二硅化物层的顶表面的接触孔。

6. 发明授权

US07675100B2 CMOS image sensor and method for fabricating the same 有权
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07675100B2
公开(公告)日：2010-03-09
申请号：US12012937
申请日：2008-02-05
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14603 , H01L27/1463 , H01L27/14689
摘要： CMOS image sensor and method for fabricating the same, the CMOS image sensor including a second conductive type semiconductor substrate having an active region and a device isolation region defined therein, wherein the active region has a photodiode region and a transistor region defined therein, a device isolating film in the semiconductor substrate of the device isolation region, a first conductive type impurity region in the semiconductor substrate of the photodiode region, the first conductive type impurity region being spaced a distance from the device isolation film, and a second conductive type first impurity region in the semiconductor substrate between the first conductive type impurity region and the device isolation film, thereby reducing generation of a darkcurrent at an interface between the photodiode region and a field region.
摘要翻译： CMOS图像传感器及其制造方法，CMOS图像传感器包括具有限定在其中的有源区和器件隔离区的第二导电型半导体衬底，其中有源区具有限定在其中的光电二极管区和晶体管区，在器件隔离区域的半导体衬底中的隔离膜，在光电二极管区域的半导体衬底中的第一导电类型杂质区域，与器件隔离膜间隔一定距离的第一导电类型杂质区域和第二导电类型第一杂质在第一导电型杂质区域和器件隔离膜之间的半导体衬底中的区域，从而减少在光电二极管区域和场区域之间的界面处的产生暗电流。

7. 发明授权

US07667749B2 Image sensor having a partial light-shielding layer and method for fabricating the same 失效
标题翻译：具有部分遮光层的图像传感器及其制造方法
公开(公告)号：US07667749B2
公开(公告)日：2010-02-23
申请号：US11020525
申请日：2004-12-27
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H04N3/14 , H01L31/062 , H04N5/225
CPC分类号： H04N9/045 , H01L27/14621 , H01L27/14623 , H01L27/14645 , H01L27/14685 , H04N2209/045
摘要： An image sensor and a method for fabricating the same are disclosed, in which a partial light-shielding layer is additionally arranged on a path of a particular colored light, for example, a red colored light that may cause excessive permeation, to partially shield the corresponding red colored light in a state that red colored light, green colored light and blue colored light are permeated into each photodiode of a semiconductor substrate, so that the permeation position of the red colored light coincides with that of the green colored light and the blue colored light each having the wavelength shorter than that of the red colored light, thereby normally generating optical charges caused by the red colored light in an effective depletion area of the photodiode like those caused by the green colored light and the blue colored light. The permeation position of a red colored light, a green colored light and a blue colored light coincides with one another within a depletion area of a semiconductor substrate to obtain an optimal effective ratio from respective optical charges and the uniform quantity of the respective optical charges can be transferred/discharged to an interpolation circuit by signal processing transistors, thereby effectively displaying color images having excellent display quality (in color and resolution) approximate to a ratio of 1:1:1 with red, green and blue.
摘要翻译：公开了一种图像传感器及其制造方法，其中部分遮光层另外布置在特定有色光的路径上，例如可能引起过度渗透的红色光，以部分屏蔽层在红色的光，绿色的光和蓝色的光的状态下，相应的红色的光被透过到半导体衬底的每个光电二极管中，使得红色的光的透过位置与绿色的光和蓝色的一致每一个都具有比红色光的波长短的彩色光，从而通常产生由光电二极管的有效耗尽区域中的红色光引起的光电荷，如由绿色光和蓝色光引起的那样。红色光，绿色光和蓝色光的透过位置在半导体衬底的耗尽区域内彼此重合，从各光电荷获得最佳有效比，并且各个光电荷的均匀量可以通过信号处理晶体管传输/放电到内插电路，从而以红色，绿色和蓝色有效地显示具有优良的显示质量（颜色和分辨率）的比例为1：1：1的彩色图像。

8. 发明授权

US07582504B2 CMOS image sensor and method for manufacturing the same 失效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07582504B2
公开(公告)日：2009-09-01
申请号：US11319596
申请日：2005-12-29
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L21/00 , H01L31/062 , H01L31/113
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L27/14632
摘要： A CMOS image sensor and a method for manufacturing the same are provided, in which a nitride layer for passivation is used as a microlens to reduce topology. The CMOS image sensor includes an upper metal layer partially deposited on a dielectric layer; a first nitride layer deposited on the upper metal layer; an undoped silicon glass layer deposited on the first nitride layer and polished by chemical-mechanical polishing; color filter array elements deposited and exposed on the undoped silicon glass layer and polished by the chemical-mechanical polishing; and a second nitride layer deposited on the first nitride layer and the color filter array elements and transfer-etched after forming a sacrificial microlens on the second nitride layer.
摘要翻译：提供一种CMOS图像传感器及其制造方法，其中使用用于钝化的氮化物层作为微透镜以减少拓扑结构。 CMOS图像传感器包括部分沉积在电介质层上的上金属层; 沉积在上金属层上的第一氮化物层; 沉积在第一氮化物层上并通过化学机械抛光抛光的未掺杂的硅玻璃层; 滤色器阵列元件沉积并暴露在未掺杂的硅玻璃层上，并通过化学机械抛光抛光; 以及沉积在第一氮化物层和滤色器阵列元件上的第二氮化物层，并且在第二氮化物层上形成牺牲微透镜之后进行转印蚀刻。

9. 发明授权

US07537999B2 Method for manufacturing a CMOS image sensor 有权
标题翻译： CMOS图像传感器的制造方法
公开(公告)号：US07537999B2
公开(公告)日：2009-05-26
申请号：US10746702
申请日：2003-12-24
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L21/336
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/14643 , H01L31/035272
摘要： A method for manufacturing structures of a CMOS image sensor. The method comprises the steps of depositing a gate insulating layer and a conductive layer on a semiconductor substrate; depositing an ion implantation barrier layer on the conductive layer; patterning the deposited gate insulating layer, conductive layer and ion implantation barrier layer to form a patterned, composite gate insulating layer, gate electrode and ion implantation barrier structure; forming a second photosensitive layer pattern to define a photodiode region; and implanting low-concentration dopant ions into the substrate using the second photosensitive layer pattern as an ion implantation mask to form a low-concentration dopant region within the photodiode region.
摘要翻译：一种用于制造CMOS图像传感器的结构的方法。该方法包括以下步骤：在半导体衬底上沉积栅绝缘层和导电层; 在导电层上沉积离子注入阻挡层; 图案化沉积的栅极绝缘层，导电层和离子注入阻挡层，以形成图案化的复合栅极绝缘层，栅电极和离子注入阻挡结构; 形成第二感光层图案以限定光电二极管区域; 以及使用所述第二感光层图案作为离子注入掩模将低浓度掺杂剂离子注入到所述衬底中，以在所述光电二极管区域内形成低浓度掺杂剂区域。

10. 发明授权

US07507635B2 CMOS image sensor and method of fabricating the same 有权
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07507635B2
公开(公告)日：2009-03-24
申请号：US11318434
申请日：2005-12-28
申请人： Chang Hun Han
发明人： Chang Hun Han
IPC分类号： H01L21/76
CPC分类号： H01L27/14689 , H01L27/14603 , H01L27/1463
摘要： A CMOS image sensor and method for fabricating the same, wherein the CMOS image sensor has minimized dark current at the boundary area between a photodiode and an isolation layer. The present invention includes a first-conductivity-type doping area formed in the device isolation area of the substrate, the first-conductivity-type doping area surrounding the isolation area and a dielectric layer formed between the isolation layer and the first-conductivity-type doping area, wherein the first-conductivity-type doping area and the dielectric layer are located between the isolation layer and a second-conductivity-type diffusion area.
摘要翻译：一种CMOS图像传感器及其制造方法，其中CMOS图像传感器在光电二极管和隔离层之间的边界区域具有最小化的暗电流。本发明包括在衬底的器件隔离区域中形成的第一导电型掺杂区域，围绕隔离区域的第一导电型掺杂区域和形成在隔离层和第一导电型之间的介电层掺杂区域，其中所述第一导电型掺杂区域和所述介电层位于所述隔离层和第二导电型扩散区域之间。

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