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1. 发明申请

US20060011942A1 2-Terminal semiconductor device using abrupt metal-insulator transition semiconductor material 有权
标题翻译：使用突变金属 - 绝缘体转变半导体材料的2端子半导体器件
公开(公告)号：US20060011942A1
公开(公告)日：2006-01-19
申请号：US11011878
申请日：2004-12-13
申请人： Hyun Kim , Doo Youn , Byung Chae , Kwang Kang , Yong Lim , Gyungock Kim , Sunglyul Maeng , Seong Kim
发明人： Hyun Kim , Doo Youn , Byung Chae , Kwang Kang , Yong Lim , Gyungock Kim , Sunglyul Maeng , Seong Kim
IPC分类号： H01L31/0328 , H01L21/8232
CPC分类号： H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1625
摘要： Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.
摘要翻译：提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的空穴层中的孔，以及设置在突发上的第二电极层 MIT半导体有机或无机材料层。通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

2. 发明申请

US20100193824A1 2-TERMINAL SEMICONDUCTOR DEVICE USING ABRUPT METAL-INSULATOR TRANSITION SEMICONDUCTOR MATERIAL 审中-公开
标题翻译：使用ABRUPT金属绝缘体过渡半导体材料的2端子半导体器件
公开(公告)号：US20100193824A1
公开(公告)日：2010-08-05
申请号：US12760366
申请日：2010-04-14
申请人： Hyun Tak KIM , Doo Hyeb Youn , Byung Gyu Chae , Kwang Yong Kang , Yong Sik Lim , Gyungock Kim , Sunglyul Maeng , Seong Hyun Kim
发明人： Hyun Tak KIM , Doo Hyeb Youn , Byung Gyu Chae , Kwang Yong Kang , Yong Sik Lim , Gyungock Kim , Sunglyul Maeng , Seong Hyun Kim
IPC分类号： H01L33/00 , H01L33/40
CPC分类号： H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1625
摘要： Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2 eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.
摘要翻译：提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的孔级中的孔，以及设置在第二电极层上的第二电极层突变MIT半导体有机或无机材料层。通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

3. 发明授权

US07728327B2 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material 有权
标题翻译：使用突变金属 - 绝缘体转变半导体材料的2端子半导体器件
公开(公告)号：US07728327B2
公开(公告)日：2010-06-01
申请号：US11011878
申请日：2004-12-13
申请人： Hyun Tak Kim , Doo Hyeb Youn , Byung Gyu Chae , Kwang Yong Kang , Yong Sik Lim , Gyungock Kim , Sunglyul Maeng , Seong Hyun Kim
发明人： Hyun Tak Kim , Doo Hyeb Youn , Byung Gyu Chae , Kwang Yong Kang , Yong Sik Lim , Gyungock Kim , Sunglyul Maeng , Seong Hyun Kim
IPC分类号： H01L29/04
CPC分类号： H01L45/04 , H01L45/1226 , H01L45/1233 , H01L45/14 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/1625
摘要： Provided is a 2-terminal semiconductor device that uses an abrupt MIT semiconductor material layer. The 2-terminal semiconductor device includes a first electrode layer, an abrupt MIT semiconductor organic or inorganic material layer having an energy gap less than 2eV and holes in a hole level disposed on the first electrode layer, and a second electrode layer disposed on the abrupt MIT semiconductor organic or inorganic material layer. An abrupt MIT is generated in the abrupt MIT semiconductor material layer by a field applied between the first electrode layer and the second electrode layer.
摘要翻译：提供了使用突变MIT半导体材料层的2端子半导体器件。 2端子半导体器件包括第一电极层，具有小于2eV的能隙的突变MIT半导体有机或无机材料层和设置在第一电极层上的空穴层中的孔，以及设置在突发上的第二电极层 MIT半导体有机或无机材料层。通过施加在第一电极层和第二电极层之间的场，在突变MIT半导体材料层中产生突变MIT。

4. 发明授权

US08414974B2 Method of manufacturing silicon nanotubes using doughnut-shaped catalytic metal layer 有权
标题翻译：使用环形催化金属层制造硅纳米管的方法
公开(公告)号：US08414974B2
公开(公告)日：2013-04-09
申请号：US12304739
申请日：2006-12-08
申请人： Rae-Man Park , Sang-Hyeob Kim , Sunglyul Maeng , Jonghyurk Park
发明人： Rae-Man Park , Sang-Hyeob Kim , Sunglyul Maeng , Jonghyurk Park
IPC分类号： C23C16/24
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , C01B33/02 , C01B33/027 , C30B25/00 , C30B29/06 , C30B29/602 , H01L21/02532 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16
摘要： Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.
摘要翻译：提供一种制造硅纳米管的方法，包括在基板上形成非催化金属岛; 形成催化剂金属甜甜圈以包围非催化金属岛; 并在催化剂金属甜甜圈上生长硅纳米管。使用催化剂金属甜甜圈有效地生长硅纳米管。

5. 发明申请

US20100255252A1 NANOSTRUCTURE COMPOSITE AND METHOD OF PRODUCING THE SAME 审中-公开
标题翻译：纳米结构复合材料及其制造方法
公开(公告)号：US20100255252A1
公开(公告)日：2010-10-07
申请号：US12676185
申请日：2008-09-03
申请人： Sang-Hyeob Kim , Seung-Sik Park , Sang-Woo Kim , Gong-Gu Lee , Sung-Jin Kim , Sunglyul Maeng , Sunyoung Lee , Hey-Jin Myoung
发明人： Sang-Hyeob Kim , Seung-Sik Park , Sang-Woo Kim , Gong-Gu Lee , Sung-Jin Kim , Sunglyul Maeng , Sunyoung Lee , Hey-Jin Myoung
IPC分类号： B82B3/00 , C23C16/40
CPC分类号： H01J9/025 , H01J1/304 , H01J2201/30469 , H01J2329/0455 , Y10T428/24355
摘要： Provided is a nano structure composite and a method of manufacturing the same. More specifically, a nano structure composite that includes a substrate, a first layer formed of carbon nano structures on the substrate, and a second layer formed of metal oxide nano structures on the first layer, and a method of manufacturing the same are provided. When the nano structure composite according to the present invention is used, a device having a field emission characteristic higher efficiency than a conventional device can be realized, and also, the device can be manufactured at a lower temperature and at a lower pressure. Thus, manufacturing cost can be reduced and a large scale process can be performed.
摘要翻译：提供了一种纳米结构复合材料及其制造方法。更具体地说，提供一种纳米结构复合体及其制造方法，所述纳米结构复合体包括基板，由所述基板上的碳纳米结构形成的第一层和由所述第一层上的金属氧化物纳米结构形成的第二层。当使用根据本发明的纳米结构复合材料时，可以实现具有比常规器件更高效率的场发射特性的器件，并且还可以在较低温度和较低压力下制造器件。因此，可以降低制造成本并且可以执行大规模处理。

6. 发明授权

US07985666B2 Method of manufacturing silicon nanowires using silicon nanodot thin film 有权
标题翻译：使用硅纳米点薄膜制造硅纳米线的方法
公开(公告)号：US07985666B2
公开(公告)日：2011-07-26
申请号：US12304737
申请日：2006-12-08
申请人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
发明人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： C30B25/00 , C30B29/06 , C30B29/60 , H01L21/0237 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02645 , Y10S977/762 , Y10S977/778 , Y10S977/891 , Y10S977/932
摘要： Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.
摘要翻译：提供一种制造硅纳米线的方法，包括：形成具有暴露在基板上的多个硅纳米点的硅纳米点薄膜; 并使用硅纳米点作为成核位点，在硅纳米点薄膜上生长硅纳米线。硅纳米线可以使用设置在氮化硅基体中的硅纳米点薄膜作为成核位置来制造，而不是使用催化金属岛，其中硅纳米点薄膜包括硅纳米点。

7. 发明申请

US20090325365A1 METHOD OF MANUFACTURING SILICON NANOWIRES USING SILICON NANODOT THIN FILM 有权
标题翻译：使用硅纳米薄膜制造硅纳米管的方法
公开(公告)号：US20090325365A1
公开(公告)日：2009-12-31
申请号：US12304737
申请日：2006-12-08
申请人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
发明人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
IPC分类号： H01L21/20
CPC分类号： C30B25/00 , C30B29/06 , C30B29/60 , H01L21/0237 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02645 , Y10S977/762 , Y10S977/778 , Y10S977/891 , Y10S977/932
摘要： Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.
摘要翻译：提供一种制造硅纳米线的方法，包括：形成具有暴露在基板上的多个硅纳米点的硅纳米点薄膜; 并且使用硅纳米点作为成核位点在硅纳米点薄膜上生长硅纳米线。硅纳米线可以使用设置在氮化硅基体中的硅纳米点薄膜作为成核位置来制造，而不是使用催化金属岛，其中硅纳米点薄膜包括硅纳米点。

8. 发明授权

US08087151B2 Gas sensor having zinc oxide nano-structures and method of fabricating the same 有权
标题翻译：具有氧化锌纳米结构的气体传感器及其制造方法
公开(公告)号：US08087151B2
公开(公告)日：2012-01-03
申请号：US12373908
申请日：2007-04-03
申请人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
发明人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
IPC分类号： G01N27/12
CPC分类号： G01N27/12 , Y10T29/49002
摘要： A gas sensor includes zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode. In order to form the plurality of metal islands on the zinc oxide nano-structures, a solution of metal components of a metal material is coated on the surface of each zinc oxide nano-structure.
摘要翻译：气体传感器包括形成在基板上的氧化锌纳米结构体，涂覆在每个氧化锌纳米结构的表面上且彼此分离的多个金属岛，与每个氧化锌纳米结构的一端电连接的第一电极，通过基板的结构，与每个氧化锌纳米结构的另一端电连接的第二电极和电连接到第一电极和第二电极中的每一个的电流变化测量单元，以测量量的变化量的电流在第一电极和第二电极之间流动。为了在氧化锌纳米结构上形成多个金属岛，金属材料的金属成分溶液涂覆在每个氧化锌纳米结构的表面上。

9. 发明申请

US20100012919A1 GAS SENSOR HAVING ZINC OXIDE NANO-STRUCTURES AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有氧化锌纳米结构的气体传感器及其制造方法
公开(公告)号：US20100012919A1
公开(公告)日：2010-01-21
申请号：US12373908
申请日：2007-04-03
申请人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
发明人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
IPC分类号： H01L29/12 , H01L21/34
CPC分类号： G01N27/12 , Y10T29/49002
摘要： Provided are a gas sensor using a plurality of zinc oxide nano-structures on which metal islands are formed, and a method of fabricating the same. The gas sensor comprises zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode. In order to form the plurality of metal islands separated from one another on the surface of each zinc oxide nano-structure using a wet process, metal components of a metal material are coated on the surface of each zinc oxide nano-structure using the solution in which the metal material is solved.
摘要翻译：提供了使用其上形成金属岛的多个氧化锌纳米结构的气体传感器及其制造方法。气体传感器包括形成在基板上的氧化锌纳米结构体，涂覆在每个氧化锌纳米结构的表面上并分离的多个金属岛，与每个氧化锌纳米结构的一端电连接的第一电极，通过基板的结构，与每个氧化锌纳米结构的另一端电连接的第二电极和电连接到第一电极和第二电极中的每一个的电流变化测量单元，以测量量的变化量的电流在第一电极和第二电极之间流动。为了使用湿法在每个氧化锌纳米结构的表面上形成彼此分离的多个金属岛，金属材料的金属成分使用溶液涂覆在每个氧化锌纳米结构的表面上金属材料被解决。

10. 发明申请

US20090123649A1 METHOD OF MANUFACTURING SILICON NANOTUBES USING DOUGHNUT-SHAPED CATALYTIC METAL LAYER 有权
标题翻译：使用导电型催化金属层制造硅纳米管的方法
公开(公告)号：US20090123649A1
公开(公告)日：2009-05-14
申请号：US12304739
申请日：2006-12-08
申请人： Rae-Man Park , Kim Sang-Hyoob , Sunglyul Maeng , Jonghyurk Park
发明人： Rae-Man Park , Kim Sang-Hyoob , Sunglyul Maeng , Jonghyurk Park
IPC分类号： C23C16/24
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , C01B33/02 , C01B33/027 , C30B25/00 , C30B29/06 , C30B29/602 , H01L21/02532 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16
摘要： Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.
摘要翻译：提供一种制造硅纳米管的方法，包括在基板上形成非催化金属岛; 形成催化剂金属甜甜圈以包围非催化金属岛; 并在催化剂金属甜甜圈上生长硅纳米管。使用催化剂金属甜甜圈有效地生长硅纳米管。

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