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1. 发明授权

US08414974B2 Method of manufacturing silicon nanotubes using doughnut-shaped catalytic metal layer 有权
标题翻译：使用环形催化金属层制造硅纳米管的方法
公开(公告)号：US08414974B2
公开(公告)日：2013-04-09
申请号：US12304739
申请日：2006-12-08
申请人： Rae-Man Park , Sang-Hyeob Kim , Sunglyul Maeng , Jonghyurk Park
发明人： Rae-Man Park , Sang-Hyeob Kim , Sunglyul Maeng , Jonghyurk Park
IPC分类号： C23C16/24
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , C01B33/02 , C01B33/027 , C30B25/00 , C30B29/06 , C30B29/602 , H01L21/02532 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16
摘要： Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.
摘要翻译：提供一种制造硅纳米管的方法，包括在基板上形成非催化金属岛; 形成催化剂金属甜甜圈以包围非催化金属岛; 并在催化剂金属甜甜圈上生长硅纳米管。使用催化剂金属甜甜圈有效地生长硅纳米管。

2. 发明授权

US08087151B2 Gas sensor having zinc oxide nano-structures and method of fabricating the same 有权
标题翻译：具有氧化锌纳米结构的气体传感器及其制造方法
公开(公告)号：US08087151B2
公开(公告)日：2012-01-03
申请号：US12373908
申请日：2007-04-03
申请人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
发明人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
IPC分类号： G01N27/12
CPC分类号： G01N27/12 , Y10T29/49002
摘要： A gas sensor includes zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode. In order to form the plurality of metal islands on the zinc oxide nano-structures, a solution of metal components of a metal material is coated on the surface of each zinc oxide nano-structure.
摘要翻译：气体传感器包括形成在基板上的氧化锌纳米结构体，涂覆在每个氧化锌纳米结构的表面上且彼此分离的多个金属岛，与每个氧化锌纳米结构的一端电连接的第一电极，通过基板的结构，与每个氧化锌纳米结构的另一端电连接的第二电极和电连接到第一电极和第二电极中的每一个的电流变化测量单元，以测量量的变化量的电流在第一电极和第二电极之间流动。为了在氧化锌纳米结构上形成多个金属岛，金属材料的金属成分溶液涂覆在每个氧化锌纳米结构的表面上。

3. 发明申请

US20100012919A1 GAS SENSOR HAVING ZINC OXIDE NANO-STRUCTURES AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有氧化锌纳米结构的气体传感器及其制造方法
公开(公告)号：US20100012919A1
公开(公告)日：2010-01-21
申请号：US12373908
申请日：2007-04-03
申请人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
发明人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
IPC分类号： H01L29/12 , H01L21/34
CPC分类号： G01N27/12 , Y10T29/49002
摘要： Provided are a gas sensor using a plurality of zinc oxide nano-structures on which metal islands are formed, and a method of fabricating the same. The gas sensor comprises zinc oxide nano-structures formed on a substrate, a plurality of metal islands coated on a surface of each zinc oxide nano-structure and separated from one another, a first electrode electrically connected to one end of each zinc oxide nano-structure through the substrate, a second electrode electrically connected to the other end of each zinc oxide nano-structure, and a current variation-measuring unit electrically connected to each of the first electrode and the second electrode so as to measure a variation in the amount of current flowing between the first electrode and the second electrode. In order to form the plurality of metal islands separated from one another on the surface of each zinc oxide nano-structure using a wet process, metal components of a metal material are coated on the surface of each zinc oxide nano-structure using the solution in which the metal material is solved.
摘要翻译：提供了使用其上形成金属岛的多个氧化锌纳米结构的气体传感器及其制造方法。气体传感器包括形成在基板上的氧化锌纳米结构体，涂覆在每个氧化锌纳米结构的表面上并分离的多个金属岛，与每个氧化锌纳米结构的一端电连接的第一电极，通过基板的结构，与每个氧化锌纳米结构的另一端电连接的第二电极和电连接到第一电极和第二电极中的每一个的电流变化测量单元，以测量量的变化量的电流在第一电极和第二电极之间流动。为了使用湿法在每个氧化锌纳米结构的表面上形成彼此分离的多个金属岛，金属材料的金属成分使用溶液涂覆在每个氧化锌纳米结构的表面上金属材料被解决。

4. 发明授权

US07985666B2 Method of manufacturing silicon nanowires using silicon nanodot thin film 有权
标题翻译：使用硅纳米点薄膜制造硅纳米线的方法
公开(公告)号：US07985666B2
公开(公告)日：2011-07-26
申请号：US12304737
申请日：2006-12-08
申请人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
发明人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： C30B25/00 , C30B29/06 , C30B29/60 , H01L21/0237 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02645 , Y10S977/762 , Y10S977/778 , Y10S977/891 , Y10S977/932
摘要： Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.
摘要翻译：提供一种制造硅纳米线的方法，包括：形成具有暴露在基板上的多个硅纳米点的硅纳米点薄膜; 并使用硅纳米点作为成核位点，在硅纳米点薄膜上生长硅纳米线。硅纳米线可以使用设置在氮化硅基体中的硅纳米点薄膜作为成核位置来制造，而不是使用催化金属岛，其中硅纳米点薄膜包括硅纳米点。

5. 发明申请

US20090325365A1 METHOD OF MANUFACTURING SILICON NANOWIRES USING SILICON NANODOT THIN FILM 有权
标题翻译：使用硅纳米薄膜制造硅纳米管的方法
公开(公告)号：US20090325365A1
公开(公告)日：2009-12-31
申请号：US12304737
申请日：2006-12-08
申请人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
发明人： Rae-Man Park , Sang-Hyeob Kim , Jonghyurk Park , Sunglyul Maeng
IPC分类号： H01L21/20
CPC分类号： C30B25/00 , C30B29/06 , C30B29/60 , H01L21/0237 , H01L21/02532 , H01L21/02603 , H01L21/0262 , H01L21/02631 , H01L21/02639 , H01L21/02645 , Y10S977/762 , Y10S977/778 , Y10S977/891 , Y10S977/932
摘要： Provided is a method of manufacturing silicon nanowires including: forming a silicon nanodot thin film having a plurality of silicon nanodots exposed on a substrate; and growing the silicon nanowires on the silicon nanodot thin film using the silicon nanodots as a nucleation site. The silicon nanowires can be manufactured using the silicon nanodot thin film disposed in a silicon nitride matrix, as a nucleation site instead of using catalytic metal islands, wherein the silicon nanodot thin film includes the silicon nanodots.
摘要翻译：提供一种制造硅纳米线的方法，包括：形成具有暴露在基板上的多个硅纳米点的硅纳米点薄膜; 并且使用硅纳米点作为成核位点在硅纳米点薄膜上生长硅纳米线。硅纳米线可以使用设置在氮化硅基体中的硅纳米点薄膜作为成核位置来制造，而不是使用催化金属岛，其中硅纳米点薄膜包括硅纳米点。

6. 发明申请

US20090123649A1 METHOD OF MANUFACTURING SILICON NANOTUBES USING DOUGHNUT-SHAPED CATALYTIC METAL LAYER 有权
标题翻译：使用导电型催化金属层制造硅纳米管的方法
公开(公告)号：US20090123649A1
公开(公告)日：2009-05-14
申请号：US12304739
申请日：2006-12-08
申请人： Rae-Man Park , Kim Sang-Hyoob , Sunglyul Maeng , Jonghyurk Park
发明人： Rae-Man Park , Kim Sang-Hyoob , Sunglyul Maeng , Jonghyurk Park
IPC分类号： C23C16/24
CPC分类号： H01L29/0665 , B82Y10/00 , B82Y30/00 , C01B33/02 , C01B33/027 , C30B25/00 , C30B29/06 , C30B29/602 , H01L21/02532 , H01L21/02606 , H01L21/0262 , H01L21/02639 , H01L21/02642 , H01L21/02645 , H01L21/02653 , H01L29/0673 , H01L29/0676 , H01L29/16
摘要： Provided is a method of manufacturing silicon nanotubes including forming non-catalytic metal islands on a substrate; forming catalyst metal doughnuts to surround the non-catalytic metal islands; and growing silicon nanotubes on the catalyst metal doughnuts. The silicon nanotubes are efficiently grown using the catalyst metal doughnuts.
摘要翻译：提供一种制造硅纳米管的方法，包括在基板上形成非催化金属岛; 形成催化剂金属甜甜圈以包围非催化金属岛; 并在催化剂金属甜甜圈上生长硅纳米管。使用催化剂金属甜甜圈有效地生长硅纳米管。

7. 发明授权

US08022791B2 Radio frequency device comprising a vibratile carbon nanotube and a vibratile tuning electrode 有权
标题翻译：包括振动性碳纳米管和振动调谐电极的射频装置
公开(公告)号：US08022791B2
公开(公告)日：2011-09-20
申请号：US12495579
申请日：2009-06-30
申请人： Chull Won Ju , Jonghyurk Park , Yong Il Jun , Hee-Bum Jung
发明人： Chull Won Ju , Jonghyurk Park , Yong Il Jun , Hee-Bum Jung
IPC分类号： H03H9/24 , H03H9/46 , H04B1/16
CPC分类号： H03H9/02417 , Y10S977/732 , Y10S977/742 , Y10S977/932 , Y10S977/949
摘要： An RF device is provided. The RF device includes a vibratile carbon nanotube having a nanotube natural frequency (f0), a negative electrode fixed to a first end of the carbon nanotube, a vibratile tuning electrode having a variable resonance frequency and facing a second end of the carbon nanotube, and a positive electrode electrically connected to a first end of the tuning electrode. A second end of the tuning electrode is adjacent to the second end of the carbon nanotube, and the carbon nanotube vibrates at a carrier frequency according to an external electromagnetic wave having the carrier frequency, and the tuning electrode having variable resonance frequency characteristics amplifies distance variation between the second end of the carbon nanotube and the second end of the tuning electrode to increase an electron emission sensitivity according to field emission.
摘要翻译：提供RF设备。 RF装置包括具有纳米管固有频率（f0）的振动性碳纳米管，固定在碳纳米管的第一端的负极，具有可变谐振频率且面向碳纳米管的第二端的振动调谐电极，以及电极连接到调谐电极的第一端的正电极。调谐电极的第二端与碳纳米管的第二端相邻，并且碳纳米管根据具有载波频率的外部电磁波以载波频率振动，并且具有可变谐振频率特性的调谐电极放大距离变化在碳纳米管的第二端和调谐电极的第二端之间，以根据场发射增加电子发射灵敏度。

8. 发明申请

US20070073058A1 Compound having thiol anchoring group, method of synthesizing the same, and molecular electronic device having molecular active layer formed using the compound 失效
标题翻译：具有硫醇锚定基团的化合物，其合成方法和使用该化合物形成分子活性层的分子电子器件
公开(公告)号：US20070073058A1
公开(公告)日：2007-03-29
申请号：US11398188
申请日：2006-04-04
申请人： Hyoyoung Lee , Junghyun Lee , Heeyoel Baek , Gyeong Bang , Jonghyurk Park , Nak-Jin Choi , Kun Jun , Seung Shin
发明人： Hyoyoung Lee , Junghyun Lee , Heeyoel Baek , Gyeong Bang , Jonghyurk Park , Nak-Jin Choi , Kun Jun , Seung Shin
IPC分类号： C07D417/00
CPC分类号： C07D417/12 , C07D333/42
摘要： Provided are an electron donor-azo-electron acceptor compound having a thiol-based anchoring group, a method of synthesizing the compound, and a molecular electronic device having a molecular active layer formed of the compound. The compound for forming a molecular electronic device includes an azo compound that has a dinitrothiophene group and an aminobenzene group having thiol derivatives. The compound forms a molecular active layer in the molecular electronic devices. The molecular active layer is self-assembled on an electrode using the thiol derivative in the azo compound as an anchoring group. The molecular active layer in the molecular electronic device forms a switching device switching between an on-state and an off-state in response to a voltage applied to electrodes or a memory device storing a predetermined electric signal in response to a voltage applied to the electrodes.
摘要翻译：提供具有硫醇基锚定基团的电子给体 - 偶氮电子受体化合物，合成该化合物的方法和具有由该化合物形成的分子活性层的分子电子器件。用于形成分子电子器件的化合物包括具有二硝基噻吩基团和具有硫醇衍生物的氨基苯基团的偶氮化合物。该化合物在分子电子器件中形成分子活性层。使用偶氮化合物中的硫醇衍生物作为锚定基团，在电极上自组装分子活性层。分子电子器件中的分子活性层响应于施加到电极的电压或存储预定电信号的存储器件响应于施加到电极的电压而形成在导通状态和截止状态之间切换的开关器件。

9. 发明授权

US08383018B2 Method of forming nanocomposite solution, and nanocomposite photovoltaic device 失效
标题翻译：形成纳米复合材料溶液的方法和纳米复合光伏器件
公开(公告)号：US08383018B2
公开(公告)日：2013-02-26
申请号：US12860568
申请日：2010-08-20
申请人： Jonghyurk Park
发明人： Jonghyurk Park
IPC分类号： H01B1/02 , H01L31/00
CPC分类号： H01L31/035227 , H01L31/18 , Y10T29/49115
摘要： Provided is a method of forming a nanocomposite solution, and a nanocomposite photovoltaic device. In the method, a metal oxide nanorod solution is prepared and a nanoparticle solution is prepared. The metal oxide nanorod solution and the nanoparticle solution are mixed to form a nanocomposite solution.
摘要翻译：提供了形成纳米复合溶液的方法和纳米复合光伏器件。在该方法中，制备金属氧化物纳米棒溶液并制备纳米颗粒溶液。将金属氧化物纳米棒溶液和纳米颗粒溶液混合以形成纳米复合物溶液。

10. 发明申请

US20120237691A1 METHOD OF FORMING METAL OXIDE FILM 审中-公开
标题翻译：形成金属氧化物膜的方法
公开(公告)号：US20120237691A1
公开(公告)日：2012-09-20
申请号：US13369317
申请日：2012-02-09
申请人： Jonghyurk Park , Jeong Young Park
发明人： Jonghyurk Park , Jeong Young Park
IPC分类号： B05D5/12 , B05D3/06 , C23C14/48
CPC分类号： C23C26/02 , C23C4/123
摘要： Provided is a method of forming a metal oxide film. In the method, a metal oxide film is formed on a substrate using a coating solution including a metal precursor, and electrical conductivity of the metal oxide film is controlled.
摘要翻译：提供一种形成金属氧化物膜的方法。在该方法中，使用包含金属前体的涂布液在基板上形成金属氧化物膜，并且控制金属氧化物膜的导电性。

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