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1. 发明授权

US06651189B1 Communication network disturbance management method using top-down method 有权
标题翻译：通信网络扰乱管理方法采用自上而下的方法
公开(公告)号：US06651189B1
公开(公告)日：2003-11-18
申请号：US09430600
申请日：1999-10-29
申请人： Hyo Seop Jeon , Hong Beom Jeon , Soo Kil Jeong , Ho Suk Park , Jeong Tae Kim
发明人： Hyo Seop Jeon , Hong Beom Jeon , Soo Kil Jeong , Ho Suk Park , Jeong Tae Kim
IPC分类号： G06F1100
CPC分类号： H04Q3/0075 , H04L41/06 , H04L41/12 , H04M3/2227 , H04M3/2254 , H04M3/30 , H04M15/00 , H04M15/58 , H04M15/70 , H04M15/73 , H04M15/8016 , H04M2215/0188 , H04M2215/70 , H04M2215/7072 , H04M2215/7414
摘要： The present invention relates to a communication network disturbance management method using a top-down method which detects, analyzes and solves a problem by analyzing a quality state in regard to whole communication network lines. The disturbance management is performed in the whole communication network, thereby managing the communication network problems which are not notified by the users. In addition, the communication network problems can be managed before the user's dissatisfaction notification or disturbance generation. Moreover, the disturbance management access method is based on service quality values, and thus it is possible to manage the communication network problem causing reduction of the service quality provided to the users. As a result, the present invention can provide high quality communication service to the users using the communication network.
摘要翻译：本发明涉及一种使用自顶向下方法的通信网络干扰管理方法，其通过分析整个通信网络线路的质量状态来检测，分析和解决问题。在整个通信网络中进行干扰管理，从而管理未被用户通知的通信网络问题。另外，可以在用户的不满意通知或干扰发生之前管理通信网络问题。此外，干扰管理访问方法基于服务质量值，因此可以管理导致向用户提供的服务质量降低的通信网络问题。结果，本发明可以向使用通信网络的用户提供高质量的通信服务。

2. 发明授权

US5940480A Method of extracting a call set-up failure probability and a premature disconnect probability by using network data 失效
标题翻译：通过使用网络数据提取呼叫建立失败概率和提前断开概率的方法
公开(公告)号：US5940480A
公开(公告)日：1999-08-17
申请号：US991142
申请日：1997-12-16
申请人： Hyo Seop Jeon , Ho Suk Park , Jeong Tae Kim , Hyun Sik Lee , Ju Ki Park
发明人： Hyo Seop Jeon , Ho Suk Park , Jeong Tae Kim , Hyun Sik Lee , Ju Ki Park
IPC分类号： H04L12/16 , H04L1/24 , H04M15/00 , G06F15/16 , H04J1/16
CPC分类号： H04L1/24 , H04M15/00
摘要： The present invention relates to a method of extracting a call set-up failure probability and a premature disconnect probability, which are factors for accessing the quality control of a data network. In accordance with the present invention the method comprises the steps of configuring a database for causes of premature disconnect and a configuration database which stores quality values which includes originating and destination numbers. Reading the corresponding billing record and verifying whether the record is normal, and if so, determining whether the origination/destination number of the billing record is the same as that stored in the configuration database. Updating a statistics database for each configuration database, each origination/destination call, each time and date when the numbers match, and then calculating the call set-up failure probability and premature disconnect probability for each configuration database, call and each time and date of the statistics database.
摘要翻译：本发明涉及一种提取呼叫建立失败概率和提前断开概率的方法，这些概率是访问数据网络质量控制的因素。根据本发明，该方法包括以下步骤：配置用于提前断开的原因的数据库以及存储包括起始和目的地号码的质量值的配置数据库。读取对应的记帐并验证记录是否正常，如果是，则确定记帐记录的发起/目的地号码是否与配置数据库中存储的相同。更新每个配置数据库的统计数据库，每个发起/目的地呼叫，数字匹配的每个时间和日期，然后计算每个配置数据库的呼叫建立失败概率和提前断开概率，呼叫和每个时间和日期统计数据库。

3. 发明授权

US07855456B2 Metal line of semiconductor device without production of high resistance compound due to metal diffusion and method for forming the same 有权
标题翻译：由于金属扩散而不生产高电阻化合物的半导体器件的金属线及其形成方法
公开(公告)号：US07855456B2
公开(公告)日：2010-12-21
申请号：US12328988
申请日：2008-12-05
申请人： Baek Mann Kim , Seung Jin Yeom , Dong Ha Jung , Jeong Tae Kim
发明人： Baek Mann Kim , Seung Jin Yeom , Dong Ha Jung , Jeong Tae Kim
IPC分类号： H01L23/48
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556 , H01L21/76856
摘要： A metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is formed on the semiconductor substrate having the lower metal line, and a metal line forming region exposing at least a portion of the lower metal line is defined in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and includes a WNx layer, a W—N—B ternary layer, and a Ti—N—B ternary layer. A wetting layer is formed on the diffusion barrier and is made of one of a Ti layer or a TiN layer. An upper metal line is formed on the wetting layer to fill the metal line forming region of the insulation layer.
摘要翻译：金属线包括形成在半导体衬底上的下金属线。在具有下金属线的半导体衬底上形成绝缘层，并且在绝缘层中限定暴露下金属线的至少一部分的金属线形成区域。在绝缘层的金属线形成区域的表面上形成扩散阻挡层，其包括WNx层，W-N-B三元层和Ti-N-B三元层。在扩散阻挡层上形成润湿层，由Ti层或TiN层之一构成。在润湿层上形成上金属线以填充绝缘层的金属线形成区域。

4. 发明授权

US07777336B2 Metal line of semiconductor device and method for forming the same 失效
标题翻译：半导体器件的金属线及其形成方法
公开(公告)号：US07777336B2
公开(公告)日：2010-08-17
申请号：US12329718
申请日：2008-12-08
申请人： Jeong Tae Kim , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Joon Seok Oh , Nam Yeal Lee , Jae Hong Kim
发明人： Jeong Tae Kim , Seung Jin Yeom , Baek Mann Kim , Dong Ha Jung , Joon Seok Oh , Nam Yeal Lee , Jae Hong Kim
IPC分类号： H01L21/48
CPC分类号： H01L23/53238 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L2924/0002 , H01L2924/00
摘要： A metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate and a metal line forming region is formed in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer, and the diffusion layer has a multi-layered structure of an Ru layer, an RuxOy layer, an IrxOy layer, and a Ti layer. A metal layer is formed on the diffusion barrier to fill the metal line forming region of the insulation layer.
摘要翻译：半导体器件的金属线包括形成在半导体衬底上的绝缘层，并且在绝缘层中形成金属线形成区域。在绝缘层的金属线形成区域的表面上形成扩散阻挡层，扩散层具有Ru层，RuxOy层，IrxOy层和Ti层的多层结构。在扩散阻挡层上形成金属层以填充绝缘层的金属线形成区域。

5. 发明授权

US6086960A Method for improving the quality of a titanium nitride layer including carbon and oxygen 失效
标题翻译：提高包括碳和氧的氮化钛层质量的方法
公开(公告)号：US6086960A
公开(公告)日：2000-07-11
申请号：US889091
申请日：1997-07-07
申请人： Jeong Tae Kim , Sung Bo Hwang
发明人： Jeong Tae Kim , Sung Bo Hwang
IPC分类号： C23C14/06 , C23C16/34 , C23C16/56 , H01L21/28 , H01L21/285 , H01L21/3205 , C23C14/02 , H05H1/00
CPC分类号： C23C16/34 , C23C16/56
摘要： The present invention is to provide a method for making a titanium nitride (TiN) layer, comprising the step of: forming the TiN layer out of a source materials; and exposing the TiN layer using the hydrogen and nitrogen plasma gases. Accordingly, the present invention has an effect that resistivity of the TiN layer decreases by eliminating the impurities therein and by decreasing the porosity thereof, and that the electrical stability of the TiN layer increases.
摘要翻译：本发明提供一种制造氮化钛（TiN）层的方法，包括以下步骤：从源材料形成TiN层; 并使用氢和氮等离子体气体暴露TiN层。因此，本发明具有通过消除其中的杂质并降低其孔隙率而降低TiN层的电阻率，并且TiN层的电稳定性增加。

6. 发明授权

US08159069B2 Metal line of semiconductor device without production of high resistance compound due to metal diffusion and method for forming the same 失效
标题翻译：由于金属扩散而不生产高电阻化合物的半导体器件的金属线及其形成方法
公开(公告)号：US08159069B2
公开(公告)日：2012-04-17
申请号：US12940521
申请日：2010-11-05
申请人： Baek Mann Kim , Seung Jin Yeom , Dong Ha Jung , Jeong Tae Kim
发明人： Baek Mann Kim , Seung Jin Yeom , Dong Ha Jung , Jeong Tae Kim
IPC分类号： H01L23/48
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/28556 , H01L21/76856
摘要： A metal line includes a lower metal line formed on a semiconductor substrate. An insulation layer is formed on the semiconductor substrate having the lower metal line, and a metal line forming region exposing at least a portion of the lower metal line is defined in the insulation layer. A diffusion barrier is formed on a surface of the metal line forming region of the insulation layer and includes a WNx layer, a W—N—B ternary layer, and a Ti—N—B ternary layer. A wetting layer is formed on the diffusion barrier and is made of one of a Ti layer or a TiN layer. An upper metal line is formed on the wetting layer to fill the metal line forming region of the insulation layer.
摘要翻译：金属线包括形成在半导体衬底上的下金属线。在具有下金属线的半导体衬底上形成绝缘层，并且在绝缘层中限定暴露下金属线的至少一部分的金属线形成区域。在绝缘层的金属线形成区域的表面上形成扩散阻挡层，其包括WNx层，W-N-B三元层和Ti-N-B三元层。在扩散阻挡层上形成润湿层，由Ti层或TiN层之一构成。在润湿层上形成上金属线以填充绝缘层的金属线形成区域。

7. 发明授权

US07977793B2 Metal line of semiconductor device having a diffusion barrier with an amorphous TaBN layer and method for forming the same 有权
标题翻译：具有无定形TaBN层的扩散阻挡层的半导体器件的金属线及其形成方法
公开(公告)号：US07977793B2
公开(公告)日：2011-07-12
申请号：US11939666
申请日：2007-11-14
申请人： Dong Ha Jung , Seung Jin Yeom , Baek Mann Kim , Young Jin Lee , Jeong Tae Kim
发明人： Dong Ha Jung , Seung Jin Yeom , Baek Mann Kim , Young Jin Lee , Jeong Tae Kim
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L23/53238 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal line in a semiconductor device includes an insulation layer formed on a semiconductor substrate. A metal line forming region is formed in the insulation layer. A metal line is formed to fill the metal line forming region of the insulation layer. And a diffusion barrier that includes an amorphous TaBN layer is formed between the metal line and the insulation layer. The amorphous TaBN layer prevents a copper component from diffusing into the semiconductor substrate, thereby improving upon the characteristics and the reliability of a device.
摘要翻译：半导体器件中的金属线包括形成在半导体衬底上的绝缘层。在绝缘层中形成金属线形成区域。形成金属线以填充绝缘层的金属线形成区域。并且在金属线和绝缘层之间形成包括非晶态TaBN层的扩散阻挡层。无定形TaBN层防止铜成分扩散到半导体衬底中，从而改善器件的特性和可靠性。

8. 发明授权

US07875979B2 Metal line of semiconductor device having a diffusion barrier including CRxBy and method for forming the same 失效
标题翻译：具有包含CRxBy的扩散阻挡层的半导体器件的金属线及其形成方法
公开(公告)号：US07875979B2
公开(公告)日：2011-01-25
申请号：US12619147
申请日：2009-11-16
申请人： Dong Ha Jung , Seung Jin Yeom , Baek Mann Kim , Young Jin Lee , Jeong Tae Kim
发明人： Dong Ha Jung , Seung Jin Yeom , Baek Mann Kim , Young Jin Lee , Jeong Tae Kim
IPC分类号： H01L29/40
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/76873 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metal line of a semiconductor device having a diffusion barrier including CrxBy and a method for forming the same is described. The metal line of a semiconductor device includes an insulation layer formed on a semiconductor substrate. The insulation layer is formed having a metal line forming region. A diffusion barrier including a CrxBy layer is subsequently formed on the surface of the metal line forming region and the insulation layer. A metal line is finally formed to fill the metal line forming region of the insulation layer on the diffusion barrier including a CrxBy layer.
摘要翻译：描述了具有包括CrxBy的扩散阻挡层的半导体器件的金属线及其形成方法。半导体器件的金属线包括形成在半导体衬底上的绝缘层。绝缘层形成有金属线形成区域。随后在金属线形成区域和绝缘层的表面上形成包括Cr x B y层的扩散阻挡层。最后形成金属线以填充包含CrxBy层的扩散阻挡层上的绝缘层的金属线形成区域。

9. 发明授权

US5780356A Method for forming metal wire of semiconductor device 失效
标题翻译：形成半导体器件金属线的方法
公开(公告)号：US5780356A
公开(公告)日：1998-07-14
申请号：US764218
申请日：1996-12-13
申请人： Jeong Tae Kim
发明人： Jeong Tae Kim
IPC分类号： H01L21/28 , H01L21/285 , H01L21/768 , H01L21/283
CPC分类号： H01L21/76856 , H01L21/2855 , H01L21/76843 , H01L21/76877
摘要： Operation of semiconductor devices suitable for high integration is achieved in a method for forming a metal wire, in which a plasma treating process is carried out to recruit a dense high-melting-point nitride film as a barrier layer. The method includes steps of providing a semiconductor substrate, forming an insulating layer having a contact hole over the semiconductor substrate, forming a high melting point metal film over exposed surfaces of the contact hole and the insulating layer, plasma treating the high melting point metal film to form a dense lower high melting point metal nitride film over the high melting point metal film, forming an upper high melting point metal nitride film over the dense lower high melting point metal nitride film in a chemical vapor deposition process, forming a tungsten layer on the upper high melting point metal nitride film within the contact hole so as to fill the contact hole, and forming a conductive metal film over the tungsten layer and the upper high melting point metal nitride film.
摘要翻译：适用于高集成度的半导体器件的操作在形成金属线的方法中实现，其中进行等离子体处理工艺以招募致密的高熔点氮化物膜作为阻挡层。该方法包括以下步骤：提供半导体衬底，在半导体衬底上形成具有接触孔的绝缘层，在接触孔和绝缘层的暴露表面上形成高熔点金属膜，等离子体处理高熔点金属膜在高熔点金属膜上形成致密的下部高熔点金属氮化物膜，在化学气相沉积工艺中在致密的下部高熔点金属氮化物膜上形成上部高熔点金属氮化物膜，在其上形成钨层接触孔内的上部高熔点金属氮化物膜，以填充接触孔，并在钨层和上部高熔点金属氮化物膜上形成导电金属膜。

10. 发明授权

US08043962B2 Metal wire for a semiconductor device formed with a metal layer without voids therein and a method for forming the same 有权
标题翻译：用于形成有无空隙的金属层的半导体器件用金属线及其形成方法
公开(公告)号：US08043962B2
公开(公告)日：2011-10-25
申请号：US11756005
申请日：2007-05-31
申请人： Dong Ha Jung , Baek Mann Kim , Soo Hyun Kim , Young Jin Lee , Sun Woo Hwang , Jeong Tae Kim
发明人： Dong Ha Jung , Baek Mann Kim , Soo Hyun Kim , Young Jin Lee , Sun Woo Hwang , Jeong Tae Kim
IPC分类号： H01L21/4763
CPC分类号： H01L21/76879 , H01L21/76831 , H01L21/76856 , H01L21/76886 , H01L21/76888 , H01L23/53223 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A metal wiring of a semiconductor device includes a semiconductor substrate; an insulating layer provided with a damascene pattern formed over the semiconductor substrate; a diffusion barrier layer which contains a RuO2 layer formed on a surface of the damascene pattern and an Al deposit-inhibiting layer formed on a portion of the RuO2 layer in both-side upper portion of the damascene pattern; and a wiring metal layer including Al formed on the diffusion barrier layer by MOCVD method in order to fill the damascene pattern.
摘要翻译：半导体器件的金属布线包括半导体衬底; 绝缘层，设置有形成在所述半导体衬底上的镶嵌图案; 包含在镶嵌图案的表面上形成的RuO 2层的扩散阻挡层和形成在该镶嵌图案的两侧上部的RuO 2层的一部分上的Al沉积抑制层; 以及通过MOCVD法在扩散阻挡层上形成的包括Al的布线金属层，以填充镶嵌图案。

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