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1. 发明申请

US20120037906A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20120037906A1
公开(公告)日：2012-02-16
申请号：US13115088
申请日：2011-05-24
申请人： Hye-Young RYU , Woo-Geun LEE , Young-Joo CHOI , Kyoung-Jae CHUNG , Jin-Won LEE , Seung-Ha CHOI , Hee-Jun BYEON , Pil-Sang YUN
发明人： Hye-Young RYU , Woo-Geun LEE , Young-Joo CHOI , Kyoung-Jae CHUNG , Jin-Won LEE , Seung-Ha CHOI , Hee-Jun BYEON , Pil-Sang YUN
IPC分类号： H01L29/786 , H01L21/44
CPC分类号： H01L27/1214 , H01L27/1225 , H01L27/1255
摘要： A thin film transistor array substrate capable of reducing degradation of a device due to degradation of an oxide semiconductor pattern and a method of fabricating the same are provided. The thin film transistor array substrate may include an insulating substrate on which a gate electrode is formed, a gate insulating film formed on the insulating substrate, an oxide semiconductor pattern disposed on the gate insulating film, an anti-etching pattern formed on the oxide semiconductor pattern, and a source electrode and a drain electrode formed on the anti-etching pattern. The oxide semiconductor pattern may include an edge portion positioned between the source electrode and the drain electrode, and the edge portion may include at least one conductive region and at least one non-conductive region.
摘要翻译：提供了能够降低由于氧化物半导体图案的劣化引起的器件劣化的薄膜晶体管阵列基板及其制造方法。薄膜晶体管阵列基板可以包括其上形成有栅极的绝缘基板，形成在绝缘基板上的栅极绝缘膜，设置在栅极绝缘膜上的氧化物半导体图案，形成在氧化物半导体上的抗蚀刻图案图案，以及形成在防蚀刻图案上的源电极和漏电极。氧化物半导体图案可以包括位于源电极和漏电极之间的边缘部分，并且边缘部分可以包括至少一个导电区域和至少一个非导电区域。

2. 发明申请

US20110193076A1 THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF 有权
标题翻译：薄膜晶体管面板及其制作方法
公开(公告)号：US20110193076A1
公开(公告)日：2011-08-11
申请号：US12957743
申请日：2010-12-01
申请人： Pil-Sang YUN , Ki-Won KIM , Hye-Young RYU , Woo-Geun LEE , Seung-Ha CHOI , Jae-Hyoung YOUN , Kyoung-Jae CHUNG , Young-Wook LEE , Je-Hun LEE , Kap-Soo YOON , Do-Hyun KIM , Dong-Ju YANG , Young-Joo CHOI
发明人： Pil-Sang YUN , Ki-Won KIM , Hye-Young RYU , Woo-Geun LEE , Seung-Ha CHOI , Jae-Hyoung YOUN , Kyoung-Jae CHUNG , Young-Wook LEE , Je-Hun LEE , Kap-Soo YOON , Do-Hyun KIM , Dong-Ju YANG , Young-Joo CHOI
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/41733 , H01L21/44 , H01L21/441 , H01L21/465 , H01L21/475 , H01L21/47573 , H01L21/47635 , H01L27/1214 , H01L27/1225 , H01L27/127 , H01L27/1288 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper.
摘要翻译：薄膜晶体管面板包括绝缘基板，设置在绝缘基板上的栅极绝缘层，设置在栅极绝缘层上的氧化物半导体层，设置在氧化物半导体层上的蚀刻停止器，以及设置在源极电极和漏极上的在蚀刻停止器上。

3. 发明申请

US20110097961A1 DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US20110097961A1
公开(公告)日：2011-04-28
申请号：US12981287
申请日：2010-12-29
申请人： Min-Seok OH , Yang-Ho BAE , Pil-Sang YUN , Byeong-Beom KIM , Seung-Ha CHOI , Sang-Gab KIM , Chang-Ho JEONG , Shin-Il CHOI , Hong-Kee CHIN , Yu-Gwang JEONG , Dong-Ju YANG
发明人： Min-Seok OH , Yang-Ho BAE , Pil-Sang YUN , Byeong-Beom KIM , Seung-Ha CHOI , Sang-Gab KIM , Chang-Ho JEONG , Shin-Il CHOI , Hong-Kee CHIN , Yu-Gwang JEONG , Dong-Ju YANG
IPC分类号： H01J9/20
CPC分类号： H01L27/12 , G02F2001/136295 , H01L27/124 , H01L29/458
摘要： In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes.
摘要翻译：在显示面板和制造显示面板的方法中，在构成显示面板的基板上形成包括与数据线相同材料的栅极线，数据线以及源极和漏极，并且数据线包括铝基合金含有足够的镍以在干蚀刻期间抑制腐蚀。含有AlNi的合金的耐腐蚀性有助于防止在形成这些线和电极的选择性干蚀刻期间数据线，源电极和漏电极的腐蚀。

4. 发明申请

US20110227063A1 THIN-FILM TRANSISTOR, METHOD OF FABRICATING THE THIN-FILM TRANSISTOR, AND DISPLAY SUBSTRATE USING THE THIN-FILM TRANSISTOR 有权
标题翻译：薄膜晶体管，薄膜晶体管的制造方法和使用薄膜晶体管显示衬底
公开(公告)号：US20110227063A1
公开(公告)日：2011-09-22
申请号：US13046130
申请日：2011-03-11
申请人： Pil-Sang YUN , Young-Wook LEE , Woo-Geun LEE
发明人： Pil-Sang YUN , Young-Wook LEE , Woo-Geun LEE
IPC分类号： H01L29/786 , H01L33/00
CPC分类号： H01L21/467 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L29/41733 , H01L29/7869
摘要： Provided is an oxide thin-film transistor (TFT) substrate that may enhance the display quality of a display device and a method of fabricating the same via a simple process. The oxide TFT substrate includes: a substrate, a gate line, a data line, an oxide TFT, and a pixel electrode. An oxide layer of the oxide TFT includes a first region that has semiconductor characteristics and a channel, and a second region that is conductive and surrounds the first region. A portion of the first region is electrically connected to the pixel electrode, and the second region is electrically connected to the data line.
摘要翻译：提供了可以通过简单的处理来提高显示装置的显示质量的氧化物薄膜晶体管（TFT）基板及其制造方法。氧化物TFT基板包括：基板，栅极线，数据线，氧化物TFT和像素电极。氧化物TFT的氧化物层包括具有半导体特性的第一区域和沟道，以及导电并围绕第一区域的第二区域。第一区域的一部分电连接到像素电极，并且第二区域电连接到数据线。

5. 发明申请

US20100149476A1 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：显示基板及其制造方法
公开(公告)号：US20100149476A1
公开(公告)日：2010-06-17
申请号：US12534300
申请日：2009-08-03
申请人： Do-Hyun KIM , Jong-Hyun CHOUNG , Young-Joo CHOI , Hong-Sick PARK , Tae-Hyung IHN , Dong-Hoon LEE , Pil-Sang YUN , Je-Hyeong PARK , Chang-Oh JEONG , Je-Hun LEE , Sun-Young HONG , Bong-Kyun KIM , Byeong-Jin LEE , Nam-Seok SUH
发明人： Do-Hyun KIM , Jong-Hyun CHOUNG , Young-Joo CHOI , Hong-Sick PARK , Tae-Hyung IHN , Dong-Hoon LEE , Pil-Sang YUN , Je-Hyeong PARK , Chang-Oh JEONG , Je-Hun LEE , Sun-Young HONG , Bong-Kyun KIM , Byeong-Jin LEE , Nam-Seok SUH
IPC分类号： G02F1/1333 , B05D5/12 , B44C1/22
CPC分类号： G02F1/136286 , G02F2001/133302 , G02F2001/136295
摘要： A display substrate includes; a base substrate, a deformation preventing layer disposed on a lower surface of the base substrate, wherein the deformation preventing layer applies a force to the base substrate to prevent the base substrate from bending, a gate line disposed on an upper surface of the base substrate, a data line disposed on the base substrate, and a pixel electrode disposed on the base substrate.
摘要翻译：显示基板包括：基底基板，设置在基底基板的下表面的变形防止层，其中变形防止层向基底基板施加力以防止基底基板弯曲，设置在基底基板的上表面上的栅极线设置在基底基板上的数据线，以及配置在基底基板上的像素电极。

6. 发明申请

US20090212290A1 DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US20090212290A1
公开(公告)日：2009-08-27
申请号：US12354115
申请日：2009-01-15
申请人： Joo-Ae YOUN , Yang-Ho BAE , Chang-Oh JEONG , Chong-Chul CHAI , Pil-Sang YUN , Honglong NING , Byeong-Beom KIM
发明人： Joo-Ae YOUN , Yang-Ho BAE , Chang-Oh JEONG , Chong-Chul CHAI , Pil-Sang YUN , Honglong NING , Byeong-Beom KIM
IPC分类号： H01L27/088 , H01L21/77
CPC分类号： H01L33/0041 , H01L27/124 , H01L29/458
摘要： A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT.
摘要翻译：显示面板包括：下栅极线，基本上垂直于下栅极线设置的下数据线，连接到下栅极线和下数据线的薄膜晶体管（“TFT”），设置在下栅极线上的绝缘层，下数据线和TFT，并且具有暴露下栅极线和下数据线的多个沟槽，设置在下栅极线上的沟槽中的上栅极线，设置在下数据上的沟槽中的上数据线线和与TFT连接的像素电极。

7. 发明申请

US20130005082A1 THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管阵列基板及其制造方法
公开(公告)号：US20130005082A1
公开(公告)日：2013-01-03
申请号：US13608981
申请日：2012-09-10
申请人： Do-Hyun KIM , Je-Hun LEE , Pil-Sang YUN , Dong-Hoon LEE , Bong-Kyun KIM
发明人： Do-Hyun KIM , Je-Hun LEE , Pil-Sang YUN , Dong-Hoon LEE , Bong-Kyun KIM
IPC分类号： H01L21/336
CPC分类号： H01L27/1225 , H01L29/7869
摘要： A thin film transistor array substrate having a high charge mobility and that can raise a threshold voltage, and a method of fabricating the thin film transistor array substrate are provided. The thin film transistor array substrate includes: an insulating substrate; a gate electrode formed on the insulating substrate; an oxide semiconductor layer comprising a lower oxide layer formed on the gate electrode and an upper oxide layer formed on the lower oxide layer, such that the oxygen concentration of the upper oxide layer is higher than the oxygen concentration of the lower oxide layer; and a source electrode and a drain electrode formed on the oxide semiconductor layer and separated from each other.
摘要翻译：提供具有高电荷迁移率并且可以提高阈值电压的薄膜晶体管阵列基板，以及制造薄膜晶体管阵列基板的方法。薄膜晶体管阵列基板包括：绝缘基板; 形成在所述绝缘基板上的栅电极; 氧化物半导体层，其包括形成在所述栅电极上的低氧化物层和形成在所述低氧化物层上的上氧化物层，使得所述上氧化物层的氧浓度高于所述低氧化物层的氧浓度; 以及形成在氧化物半导体层上并且彼此分离的源电极和漏电极。

8. 发明申请

US20120228619A1 DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：显示面板及其制造方法
公开(公告)号：US20120228619A1
公开(公告)日：2012-09-13
申请号：US13472716
申请日：2012-05-16
申请人： Joo-Ae YOUN , Yang-Ho BAE , Chang-Oh JEONG , Chong-Chul CHAI , Pil-Sang YUN , Honglong NING , Byeong-Beom KIM
发明人： Joo-Ae YOUN , Yang-Ho BAE , Chang-Oh JEONG , Chong-Chul CHAI , Pil-Sang YUN , Honglong NING , Byeong-Beom KIM
IPC分类号： H01L29/786 , H01L33/08
CPC分类号： H01L33/0041 , H01L27/124 , H01L29/458
摘要： A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT.
摘要翻译：显示面板包括：下栅极线，基本上垂直于下栅极线设置的下数据线，连接到下栅极线和下数据线的薄膜晶体管（“TFT”），设置在下栅极线上的绝缘层，下数据线和TFT，并且具有暴露下栅极线和下数据线的多个沟槽，设置在下栅极线上的沟槽中的上栅极线，设置在下数据上的沟槽中的上数据线线和与TFT连接的像素电极。

9. 发明申请

US20100148169A1 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20100148169A1
公开(公告)日：2010-06-17
申请号：US12498816
申请日：2009-07-07
申请人： Do-Hyun KIM , Pil-Sang YUN , Ki-Won KIM , Dong-Hoon LEE , Chang-Oh JEONG
发明人： Do-Hyun KIM , Pil-Sang YUN , Ki-Won KIM , Dong-Hoon LEE , Chang-Oh JEONG
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/12 , H01L27/1225 , H01L27/124 , H01L29/45 , H01L29/66969 , H01L29/78618
摘要： A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material.
摘要翻译：薄膜晶体管（TFT）基板具有改善的电性能和减少的外观缺陷以及制造TFT基板的方法。 TFT基板包括：形成在绝缘基板的表面上的栅极布线; 氧化物活性层图案，其形成在栅极布线上并且包括第一材料的氧化物; 缓冲层图案，其设置在所述氧化物活性层图案上以直接接触所述氧化物活性层图案并且包括第二材料; 以及形成在所述缓冲层图案上以绝缘地穿过所述栅极布线的数据布线，其中所述第一材料的氧化物的吉布斯自由能低于所述第二材料的氧化物的吉布斯自由能。

10. 发明申请

US20110147740A1 DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板，其制造方法
公开(公告)号：US20110147740A1
公开(公告)日：2011-06-23
申请号：US12977853
申请日：2010-12-23
申请人： Ki-Hun JEONG , Do-Hyun KIM , Dong-Hoon LEE , Kap-Soo YOON , Jae-Ho CHOI , Sung-Hoon YANG , Pil-Sang YUN , Seung-Mi SEO
发明人： Ki-Hun JEONG , Do-Hyun KIM , Dong-Hoon LEE , Kap-Soo YOON , Jae-Ho CHOI , Sung-Hoon YANG , Pil-Sang YUN , Seung-Mi SEO
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78606 , H01L29/78633
摘要： The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT comprises an oxide semiconductor layer; a protective layer disposed on the oxide semiconductor layer and overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode with the channel region disposed between the drain electrode and the source electrode; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.
摘要翻译：本发明公开了一种薄膜晶体管（TFT），TFT的制造方法以及使用该TFT的显示基板，其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化的氧化物半导体。 TFT包括氧化物半导体层; 保护层，设置在所述氧化物半导体层上并与所述氧化物半导体层的沟道区域重叠; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 与所述氧化物半导体层的第二面接触且与所述源电极相对的漏电极，所述沟道区域设置在所述漏电极和所述源电极之间; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。

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