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1. 发明申请

US20110147740A1 DISPLAY SUBSTRATE, METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板，其制造方法
公开(公告)号：US20110147740A1
公开(公告)日：2011-06-23
申请号：US12977853
申请日：2010-12-23
申请人： Ki-Hun JEONG , Do-Hyun KIM , Dong-Hoon LEE , Kap-Soo YOON , Jae-Ho CHOI , Sung-Hoon YANG , Pil-Sang YUN , Seung-Mi SEO
发明人： Ki-Hun JEONG , Do-Hyun KIM , Dong-Hoon LEE , Kap-Soo YOON , Jae-Ho CHOI , Sung-Hoon YANG , Pil-Sang YUN , Seung-Mi SEO
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/78606 , H01L29/78633
摘要： The present invention discloses a thin film transistor (TFT), a method for manufacturing the TFT, and a display substrate using the TFT that may prevent degradation of the characteristics of an oxide semiconductor contained in the TFT by blocking external light from entering a channel region of the oxide semiconductor. The TFT comprises an oxide semiconductor layer; a protective layer disposed on the oxide semiconductor layer and overlapping a channel region of the oxide semiconductor layer; an opaque layer disposed between the oxide semiconductor layer and the protective layer; a source electrode contacting a first side of the oxide semiconductor layer; a drain electrode contacting a second side of the oxide semiconductor layer and facing the source electrode with the channel region disposed between the drain electrode and the source electrode; a gate electrode to apply an electric field to the oxide semiconductor layer; and a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer.
摘要翻译：本发明公开了一种薄膜晶体管（TFT），TFT的制造方法以及使用该TFT的显示基板，其可以防止外部光阻挡进入沟道区域而使TFT中包含的氧化物半导体的特性劣化的氧化物半导体。 TFT包括氧化物半导体层; 保护层，设置在所述氧化物半导体层上并与所述氧化物半导体层的沟道区域重叠; 设置在所述氧化物半导体层和所述保护层之间的不透明层; 与氧化物半导体层的第一面接触的源电极; 与所述氧化物半导体层的第二面接触且与所述源电极相对的漏电极，所述沟道区域设置在所述漏电极和所述源电极之间; 用于向氧化物半导体层施加电场的栅电极; 以及设置在栅电极和氧化物半导体层之间的栅极绝缘层。

2. 发明申请

US20110090437A1 PHOTONIC SENSOR, METHOD OF MANUFACTURING SAME, COLOR FILTER SUBSTRATE HAVING SAME, AND DISPLAY DEVICE HAVING THE COLOR FILTER SUBSTRATE 有权
标题翻译：光电传感器，其制造方法，具有它们的彩色滤色器基板以及具有彩色滤光片基板的显示装置
公开(公告)号：US20110090437A1
公开(公告)日：2011-04-21
申请号：US12898250
申请日：2010-10-05
申请人： Kap-Soo YOON , Sung-Hoon YANG , Ki-Hun JEONG , Kyung-Sook JEON , Seung-Mi SEO
发明人： Kap-Soo YOON , Sung-Hoon YANG , Ki-Hun JEONG , Kyung-Sook JEON , Seung-Mi SEO
IPC分类号： H01L31/0232 , H01L31/0352 , G02B5/23 , B82Y15/00
CPC分类号： H01L27/1446 , B82Y15/00 , B82Y20/00 , G02B5/201 , H01L31/09 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A photonic sensor includes a first electrode layer, a second electrode layer, a third electrode layer, a first photon absorption layer, a second photon absorption layer, a third photon absorption layer and a charge blocking layer. The first photon absorption layer includes a dispersion of first nanoparticles, and is configured to transduce a first colored light into corresponding electric charge. The second photon absorption layer includes a dispersion of second nanoparticles, and is configured to transduce a second colored light into corresponding electric charge according to light intensity. The third photon absorption layer includes a dispersion of third nanoparticles, and is configured to transduce a third colored light into corresponding electric charge according to light intensity. The charge blocking layer is formed between the first and second photon absorption layers to block flow of electric charge between the first and second photon absorption layers.
摘要翻译：光子传感器包括第一电极层，第二电极层，第三电极层，第一光子吸收层，第二光子吸收层，第三光子吸收层和电荷阻挡层。第一光子吸收层包括第一纳米颗粒的分散体，并且被配置为将第一有色光转换成相应的电荷。第二光子吸收层包括第二纳米颗粒的分散体，并且被配置为根据光强度将第二有色光转换成相应的电荷。第三光子吸收层包括第三纳米颗粒的分散体，并且被配置为根据光强度将第三有色光转换成相应的电荷。电荷阻挡层形成在第一和第二光子吸收层之间以阻止第一和第二光子吸收层之间的电荷流动。

3. 发明申请

US20100019996A1 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US20100019996A1
公开(公告)日：2010-01-28
申请号：US12486542
申请日：2009-06-17
申请人： Chun-Gi YOU , Kap-Soo YOON , Gug-Rae JO , Sung-Hoon YANG , Ki-Hun JEONG , Seung-Hwan SHIM , Jae-Ho CHOI
发明人： Chun-Gi YOU , Kap-Soo YOON , Gug-Rae JO , Sung-Hoon YANG , Ki-Hun JEONG , Seung-Hwan SHIM , Jae-Ho CHOI
IPC分类号： G09G3/30 , H01L21/00
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/1225 , H01L27/1288 , H01L27/3262 , H01L29/7869
摘要： A display substrate includes a switching transistor electrically connected to a gate line and a data line, the data line extending in a first direction substantially perpendicular to the gate line extending in a second direction, the switching transistor including a switching active pattern comprising amorphous silicon, a driving transistor electrically connected to a driving voltage line and the switching transistor, the driving voltage line extended in the first direction, the driving transistor including a driving active pattern comprising a metal oxide; and a light-emitting element electrically connected to the driving transistor.
摘要翻译：显示基板包括电连接到栅极线和数据线的开关晶体管，所述数据线在基本上垂直于在第二方向延伸的栅极线的第一方向上延伸，所述开关晶体管包括包含非晶硅的开关有源图案，电连接到驱动电压线的驱动晶体管和所述开关晶体管，所述驱动电压线在所述第一方向上延伸，所述驱动晶体管包括包含金属氧化物的驱动有源图案; 以及电连接到驱动晶体管的发光元件。

4. 发明申请

US20100123861A1 LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：液晶显示器及其制造方法
公开(公告)号：US20100123861A1
公开(公告)日：2010-05-20
申请号：US12547039
申请日：2009-08-25
申请人： Seung-Hwan SHIM , Gug-Rae JO , Sung-Hoon YANG , Kap-Soo YOON , Ki-Hun JEONG , Jae-Ho CHOI , Yang-Ho JUNG
发明人： Seung-Hwan SHIM , Gug-Rae JO , Sung-Hoon YANG , Kap-Soo YOON , Ki-Hun JEONG , Jae-Ho CHOI , Yang-Ho JUNG
IPC分类号： G02F1/1335 , H01L21/28
CPC分类号： G02F1/136227 , G02F1/133514 , G02F2001/133565 , G02F2001/133567 , H01L27/1248
摘要： A liquid crystal display includes; a first substrate, a gate line and a data line disposed on the first substrate, a color filter including protrusions and depressions aligned with the data line, the color filter being disposed on the data line, a pixel electrode disposed on the color filter, a second substrate facing the first substrate, a common electrode disposed on the second substrate, and a liquid crystal layer interposed between the first substrate and the second substrate.
摘要翻译：液晶显示器包括：设置在第一基板上的第一基板，栅极线和数据线，包括与数据线对准的突起和凹陷的滤色器，滤色器设置在数据线上，设置在滤色器上的像素电极，面对第一基板的第二基板，设置在第二基板上的公共电极以及插在第一基板和第二基板之间的液晶层。

5. 发明申请

US20120138929A1 IR SENSING TRANSISTOR AND MANUFACTURING METHOD OF DISPLAY DEVICE INCLUDING THE SAME 有权
标题翻译： IR感测晶体管和包括其的显示器件的制造方法
公开(公告)号：US20120138929A1
公开(公告)日：2012-06-07
申请号：US13182235
申请日：2011-07-13
申请人： Suk Won JUNG , Byeong Hoon CHO , Sung Hoon YANG , Woong Kwon KIM , Sang Youn HAN , Dae Cheol KIM , Ki-Hun JEONG , Kyung-Sook JEON , Seung Mi SEO , Jung-Suk BANG , Kun-Wook HAN
发明人： Suk Won JUNG , Byeong Hoon CHO , Sung Hoon YANG , Woong Kwon KIM , Sang Youn HAN , Dae Cheol KIM , Ki-Hun JEONG , Kyung-Sook JEON , Seung Mi SEO , Jung-Suk BANG , Kun-Wook HAN
IPC分类号： H01L29/786 , H01L33/50
CPC分类号： H01L31/18 , G02F1/13338 , G02F2001/13312 , G06F3/042 , H01L29/42384 , H01L29/78633
摘要： An IR sensing transistor according to an exemplary embodiment of the present invention includes: a light blocking layer formed on a substrate; a gate insulating layer formed on the light blocking layer; a semiconductor formed on the gate insulating layer; a pair of ohmic contact members formed on the semiconductor; a source electrode and a drain electrode formed on respective ones of the ohmic contact members; a passivation layer formed on the source electrode and the drain electrode; and a gate electrode formed on the passivation layer, wherein substantially all of the gate insulating layer lies on the light blocking layer.
摘要翻译：根据本发明的示例性实施例的IR感测晶体管包括：形成在基板上的遮光层; 形成在所述遮光层上的栅极绝缘层; 形成在栅极绝缘层上的半导体; 形成在所述半导体上的一对欧姆接触构件; 源电极和漏电极，形成在各个欧姆接触元件上; 形成在源电极和漏电极上的钝化层; 以及形成在所述钝化层上的栅电极，其中所述栅极绝缘层基本上全部位于所述遮光层上。

6. 发明申请

US20110090420A1 SENSOR ARRAY SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：传感器阵列基板，包括其的显示装置及其制造方法
公开(公告)号：US20110090420A1
公开(公告)日：2011-04-21
申请号：US12898095
申请日：2010-10-05
申请人： Woong-Kwon KIM , Dae-Cheol KIM , Dong-Kwon KIM , Ki-Hun JEONG , Sung-Hoon YANG , Sang-Youn HAN , Suk-Won JUNG , Byeong-Hoon CHO , Kyung-Sook JEON , Seung-Mi SEO , Jung-Suk BANG , Mi-Seon SEO
发明人： Woong-Kwon KIM , Dae-Cheol KIM , Dong-Kwon KIM , Ki-Hun JEONG , Sung-Hoon YANG , Sang-Youn HAN , Suk-Won JUNG , Byeong-Hoon CHO , Kyung-Sook JEON , Seung-Mi SEO , Jung-Suk BANG , Mi-Seon SEO
IPC分类号： G02F1/1333 , H01L31/18 , H01L31/0232
CPC分类号： G06F3/0412 , G02F1/13338 , G06F3/042
摘要： A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor.
摘要翻译：提供了传感器阵列基板，包括传感器阵列基板的显示装置和制造传感器阵列基板的方法。所述传感器阵列基板包括基板，形成在所述基板的第一像素区域上并被配置为检测光的第一传感器，形成在所述第一传感器上的外涂层以及形成在所述外涂层上的屏蔽层，其中所述屏蔽层重叠第一个传感器。

7. 发明申请

US20110147746A1 TOUCH SCREEN SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY PANEL INCLUDING THE TOUCH SCREEN SUBSTRATE 有权
标题翻译：触摸屏幕基板，其制造方法和显示面板，包括触控屏幕基板
公开(公告)号：US20110147746A1
公开(公告)日：2011-06-23
申请号：US12898839
申请日：2010-10-06
申请人： Woong-Kwon KIM , Jung-Suk BANG , Sung-Hoon YANG , Sang-Youn HAN , Suk-Won JUNG , Byeong-Hoon CHO , Dae-Cheol KIM , Ki-Hun JEONG , Kyung-Sook JEON , Seung-Mi SEO , Kun-Wook HAN , Mi-Seon SEO
发明人： Woong-Kwon KIM , Jung-Suk BANG , Sung-Hoon YANG , Sang-Youn HAN , Suk-Won JUNG , Byeong-Hoon CHO , Dae-Cheol KIM , Ki-Hun JEONG , Kyung-Sook JEON , Seung-Mi SEO , Kun-Wook HAN , Mi-Seon SEO
IPC分类号： H01L33/16 , H01L33/08
CPC分类号： H01L27/1251 , G06F3/0412 , G06F3/042 , H01L27/1222 , H01L27/1233
摘要： A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode.
摘要翻译：触摸屏基板包括基底，第一开关元件和感测红外光的第一感测元件。第一开关元件包括第一开关栅电极，设置在第一开关栅电极上的第一有源图案，设置在第一有源图案上的第一开关源极和与第一开关源电极分开设置的第一开关漏电极。第一感测元件包括连接到第一开关源电极的第一感测漏电极，与第一感测漏电极分开设置的第一感测源电极，设置在第一感测漏电极和第一感测源电极下方的第二有源图案，以及包括第一非晶层，掺杂非晶层和第二非晶层，以及设置在第一感测漏电极和第一感测源电极上的第一感测栅电极。

8. 发明申请

US20110057189A1 DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20110057189A1
公开(公告)日：2011-03-10
申请号：US12761958
申请日：2010-04-16
申请人： Ki-Hun JEONG , Byeong-Hoon Cho , Jung-Suk Bang , Sang-Youn Han , Woong-Kwon Kim , Sung-Hoon Yang , Suk Won Jung , Dae-Cheol Kim , Kyung-Sook Jeon , Seung Mi Seo
发明人： Ki-Hun JEONG , Byeong-Hoon Cho , Jung-Suk Bang , Sang-Youn Han , Woong-Kwon Kim , Sung-Hoon Yang , Suk Won Jung , Dae-Cheol Kim , Kyung-Sook Jeon , Seung Mi Seo
IPC分类号： H01L33/08 , H01L21/336
CPC分类号： G06F3/0421 , G06F3/0412 , H01L27/1251 , H01L27/323
摘要： A display device includes a lower panel including a lower substrate and a pixel transistor formed on the lower substrate; and an upper panel facing the lower panel, and including an upper substrate, a sensing transistor formed on the upper substrate, and a readout transistor connected to the sensing transistor and transmitting a signal. The readout transistor includes a first lower gate electrode formed on the upper substrate, a first semiconductor layer formed on the first lower gate electrode and overlaps the first gate electrode, and a first source electrode and a first drain electrode disposed on the first semiconductor layer. The sensing transistor includes a light blocking film disposed on the upper substrate, a second lower gate electrode contacting the light blocking film on the light blocking film, a second semiconductor layer overlapping the light blocking film on the second lower gate electrode, a second source electrode and a second drain electrode formed on the second semiconductor layer, and a second upper gate electrode overlapping the second semiconductor layer on the second source electrode and the second drain electrode.
摘要翻译：显示装置包括：下面板，包括下基板和形成在下基板上的像素晶体管; 以及面向下面板的上面板，并且包括上基板，形成在上基板上的检测晶体管，以及连接到感测晶体管并传输信号的读出晶体管。读出晶体管包括形成在上基板上的第一下栅极电极，形成在第一下栅电极上并与第一栅电极重叠的第一半导体层，以及设置在第一半导体层上的第一源电极和第一漏电极。感测晶体管包括设置在上基板上的遮光膜，与遮光膜接触的第二下栅电极，与第二下栅电极上的遮光膜重叠的第二半导体层，第二源电极以及形成在第二半导体层上的第二漏电极和与第二源电极和第二漏电极上的第二半导体层重叠的第二上栅电极。

9. 发明申请

US20110261040A1 INFORMATION DETECTION DISPLAY 有权
标题翻译：信息检测显示
公开(公告)号：US20110261040A1
公开(公告)日：2011-10-27
申请号：US13090991
申请日：2011-04-20
申请人： Sang-Youn HAN , Dong-Kwon KIM , Kyung-Sook JEON , Sung-Hoon YANG , Joo-Han KIM , Woong-Kwon KIM , Suk-Won JUNG , Byeong-Hoon CHO , Dae-Cheol KIM , Hui-Sung LEE , Ki-Hun JEONG , Seung-Mi SEO , Jung-Suk BANG , Kun-Wook HAN , Mi-Seon SEO
发明人： Sang-Youn HAN , Dong-Kwon KIM , Kyung-Sook JEON , Sung-Hoon YANG , Joo-Han KIM , Woong-Kwon KIM , Suk-Won JUNG , Byeong-Hoon CHO , Dae-Cheol KIM , Hui-Sung LEE , Ki-Hun JEONG , Seung-Mi SEO , Jung-Suk BANG , Kun-Wook HAN , Mi-Seon SEO
IPC分类号： G09G5/00
CPC分类号： G06F3/0418 , G06F3/042
摘要： An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage.
摘要翻译：信息检测装置包括：多个光检测单元，每个光检测单元被配置为检测光; 多个传感器扫描驱动器，每个传感器扫描驱动器被配置为将传感器扫描信号施加到光感测感测信号处理器，被配置为接收由所述光感测单元检测到的位置信息; 多个偏置施加单元，每个偏置施加单元被配置为向所述光感测单元施加偏置电压; 其中每个偏置施加单元施加不同的偏置电压极性。

10. 发明申请

US20090272980A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20090272980A1
公开(公告)日：2009-11-05
申请号：US12272624
申请日：2008-11-17
申请人： Seung-Hwan SHIM , Ki-Hun JEONG , Joo-Han KIM , Sung-Hoon YANG , Hong-kee CHIN
发明人： Seung-Hwan SHIM , Ki-Hun JEONG , Joo-Han KIM , Sung-Hoon YANG , Hong-kee CHIN
IPC分类号： H01L31/036 , H01L21/84
CPC分类号： H01L27/1288 , H01L27/124
摘要： A semiconductor including a channel, a data line including a source electrode, a drain electrode, and a pixel area definition member is formed on a gate insulating layer, and a passivation layer is deposited on the data line, the pixel area definition member, and the channel of the semiconductor. A first photosensitive film pattern including a first portion disposed at a position corresponding to the drain electrode and a second portion that is thicker than the first portion, and exposing the passivation layer at a position corresponding to the pixel area definition member, is formed on the passivation layer, the passivation layer that is exposed by using the first photosensitive film pattern as an etch mask is etched, and a second photosensitive film pattern is formed by etching the whole surface of the first photosensitive film pattern to remove the first portion. The pixel area definition member exposed by the passivation layer is etched, and the passivation layer exposed by the removal of the first portion and the semiconductor exposed by the removal of the pixel area definition member are etched. A conductor layer for a pixel electrode is formed, and the second photosensitive film pattern is removed to form the pixel electrode.
摘要翻译：包括沟道的半导体，包括源电极，漏电极和像素区域定义部件的数据线形成在栅极绝缘层上，钝化层沉积在数据线，像素区域定义部件和半导体的通道。第一感光膜图案包括设置在与漏电极相对应的位置处的第一部分和比第一部分更厚的第二部分，并且在与像素区域定义部件对应的位置处曝光钝化层，形成在钝化层，蚀刻通过使用第一感光膜图案而曝光的钝化层作为蚀刻掩模，并且通过蚀刻第一感光膜图案的整个表面以除去第一部分来形成第二感光膜图案。蚀刻由钝化层露出的像素区域定义构件，蚀刻通过去除第一部分而露出的钝化层和通过去除像素区域定义构件而暴露的半导体。形成用于像素电极的导体层，并且去除第二感光膜图案以形成像素电极。

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