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1. 发明授权

US09670480B2 Genome-wide construction of Schizosaccharomyces pombe heterozygous deletion mutants containing gene-specific barcodes by the methods of 4-round serial or block PCR, or total gene synthesis thereof 有权
公开(公告)号：US09670480B2
公开(公告)日：2017-06-06
申请号：US12989192
申请日：2008-08-27
申请人： Kwang Lae Hoe , Dong Uk Kim , Mi Sun Won , Hyang Sook Yoo , Dong Sup Kim , Han Oh Park , Kyung Sook Chung , Young Joo Jang , Mi Young Nam , Sang Jo Han , Shin Jung Choi , Seung Tae Baek , Hyong Bai Kim , Kyung Sun Heo , Hye Mi Lee , Min Ho Lee , Jo Young Park
发明人： Kwang Lae Hoe , Dong Uk Kim , Mi Sun Won , Hyang Sook Yoo , Dong Sup Kim , Han Oh Park , Kyung Sook Chung , Young Joo Jang , Mi Young Nam , Sang Jo Han , Shin Jung Choi , Seung Tae Baek , Hyong Bai Kim , Kyung Sun Heo , Hye Mi Lee , Min Ho Lee , Jo Young Park
IPC分类号： C40B50/00 , C40B40/02 , C40B30/06 , C12N1/00 , C12N15/10 , C40B30/00
CPC分类号： C12N15/1034 , C12N1/00 , C40B30/00 , C40B40/02 , C40B50/00
摘要： A method comprising transforming Schizosaccharomyces pombe with a deletion cassette, constructed by four-round serial PCR, block PCR or total gene synthesis, containing a homologous recombination site is provided for preparing gene-targeted heterozygous deletion Schizosaccharomyces pombe. Also provided are gene-targeted hetero2ygous deletion Schizosaccharomyces pombe mutants prepared by the method, and a library of gene-targeted heterozygous deletion Schizosaccharomyces pombe mutants. Further, the library is useful in constructing a method and a kit for screening a drug's modes of action.

2. 发明授权

US07932001B2 Method of fabricating halftone phase shift mask 失效
标题翻译：制造半色调相移掩模的方法
公开(公告)号：US07932001B2
公开(公告)日：2011-04-26
申请号：US12347054
申请日：2008-12-31
申请人： Hye Mi Lee
发明人： Hye Mi Lee
IPC分类号： G03F1/00
CPC分类号： G03F1/32
摘要： A method of fabricating a halftone phase shift mask, comprising: forming a structure by sequentially stacking a light blocking layer pattern defining a side surface and a phase shift layer pattern over a light transmitting substrate; and treating the structure with heat to make the phase shift layer pattern flow and cover the side surface of the light blocking layer pattern.
摘要翻译：一种制造半色调相移掩模的方法，包括：通过在光透射基底上依次堆叠限定侧面和相移层图案的遮光层图案来形成结构; 并用热处理该结构，使相移层图案流动并覆盖遮光层图案的侧表面。

3. 发明申请

US20110190163A1 Genome-Wide Construction of Schizosaccharomyces Pombe Heterozygous Deletion Mutants Containing Gene-Specific Barcodes by the Methods of 4-Round Serial or Block PCR, or Total Gene Synthesis Thereof 有权
标题翻译：通过四轮序列或块PCR方法或其总基因合成方法，含有基因特异性条形码的裂殖酵母属Pombe Pombe杂合子缺失突变体的基因组构建
公开(公告)号：US20110190163A1
公开(公告)日：2011-08-04
申请号：US12989192
申请日：2008-08-27
申请人： Kwang Lae Hoe , Dong Uk Kim , Mi Sun Won , Hyang Sook Yoo , Dong Sup Kim , Han Oh Park , Kyung Sook Chung , Young Joo Jang , Mi Young Nam , Sang Jo Han , Hin Jung Choi , Seung Tae Baek , Hyong Bai Kim , Kyung Sun Heo , Hye Mi Lee , Min Ho Lee , Jo Young Park
发明人： Kwang Lae Hoe , Dong Uk Kim , Mi Sun Won , Hyang Sook Yoo , Dong Sup Kim , Han Oh Park , Kyung Sook Chung , Young Joo Jang , Mi Young Nam , Sang Jo Han , Hin Jung Choi , Seung Tae Baek , Hyong Bai Kim , Kyung Sun Heo , Hye Mi Lee , Min Ho Lee , Jo Young Park
IPC分类号： C40B30/06 , C12N1/19
CPC分类号： C12N15/1034 , C12N1/00 , C40B30/00 , C40B40/02 , C40B50/00
摘要： A method comprising transforming Schizosaccharomyces pombe with a deletion cassette, constructed by four-round serial PCR, block PCR or total gene synthesis, containing a homologous recombination site is provided for preparing gene-targeted heterozygous deletion Schizosaccharomyces pombe. Also provided are gene-targeted hetero2ygous deletion Schizosaccharomyces pombe mutants prepared by the method, and a library of gene-targeted heterozygous deletion Schizosaccharomyces pombe mutants. Further, the library is useful in constructing a method and a kit for screening a drug's modes of action.
摘要翻译：提供用于制备基因靶向杂合缺失粟酒裂殖酵母的方法，该方法包括用含有同源重组位点的四轮连续PCR，阻断PCR或全基因合成构建的缺失盒转化粟酒裂殖酵母。还提供了通过该方法制备的基因靶向杂合缺失粟酒裂殖酵母突变体和基因靶向杂合缺失粟酒裂殖酵母突变体的文库。此外，图书馆在构建用于筛选药物作用模式的方法和试剂盒方面是有用的。

4. 发明授权

US07939226B2 Binary mask, method for fabricating the binary mask, and method for fabricating fine pattern of semiconductor device using binary mask 失效
标题翻译：二进制掩模，二进制掩模的制造方法以及使用二元掩模制造半导体器件的精细图案的方法
公开(公告)号：US07939226B2
公开(公告)日：2011-05-10
申请号：US12134534
申请日：2008-06-06
申请人： Hye Mi Lee
发明人： Hye Mi Lee
IPC分类号： G03F1/00 , G03F7/00
CPC分类号： G03F1/32
摘要： Provided are a binary mask, a method for fabricating the binary mask, and a method for fabricating a fine pattern of semiconductor device. In the method for fabricating the fine pattern, a binary mask including phase shift layer patterns is prepared on a transparent substrate. A semiconductor substrate including an etch objective layer and a resist layer is prepared. An exposure operation using the binary mask and a light source of a short wavelength is performed to transfer the phase shift layer patterns of the binary mask onto the resist layer of the semiconductor substrate. The resist layer to which the patterns have been transferred is developed to form resist layer patterns selectively exposing the etch objective layer. Exposed portions of the etch objective layer are etched using the resist layer patterns as an etch mask to form etch objective layer patterns. The resist layer patterns are removed.
摘要翻译：提供二进制掩模，二进制掩模的制造方法以及制造半导体器件精细图案的方法。在精细图案的制造方法中，在透明基板上制备包括相移层图案的二值掩模。制备包括蚀刻目标层和抗蚀剂层的半导体衬底。执行使用二进制掩模和短波长的光源的曝光操作，以将二进制掩模的相移层图案转印到半导体衬底的抗蚀剂层上。已经转印图案的抗蚀剂层被显影以形成选择性地暴露蚀刻目标层的抗蚀剂层图案。使用抗蚀剂层图案作为蚀刻掩模蚀刻蚀刻目标层的暴露部分以形成蚀刻目标层图案。去除抗蚀剂层图案。

5. 发明申请

US20090253053A1 Method of Fabricating Halftone Phase Shift Mask 失效
标题翻译：制作半色调相移掩模的方法
公开(公告)号：US20090253053A1
公开(公告)日：2009-10-08
申请号：US12347054
申请日：2008-12-31
申请人： Hye Mi Lee
发明人： Hye Mi Lee
IPC分类号： G03F1/00
CPC分类号： G03F1/32
摘要： A method of fabricating a halftone phase shift mask, comprising: forming a structure by sequentially stacking a light blocking layer pattern defining a side surface and a phase shift layer pattern over a light transmitting substrate; and treating the structure with heat to make the phase shift layer pattern flow and cover the side surface of the light blocking layer pattern.
摘要翻译：一种制造半色调相移掩模的方法，包括：通过在光透射基底上依次堆叠限定侧面和相移层图案的遮光层图案来形成结构; 并用热处理该结构，使相移层图案流动并覆盖遮光层图案的侧表面。

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