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1. 发明授权

US06303049B1 Chemical mechanical abrasive composition for use in semiconductor processing 有权
标题翻译：用于半导体加工的化学机械磨料组合物
公开(公告)号：US06303049B1
公开(公告)日：2001-10-16
申请号：US09418328
申请日：1999-10-14
申请人： Tsung-Ho Lee , Tsui-Ping Yeh , Hung-Wen Chiou
发明人： Tsung-Ho Lee , Tsui-Ping Yeh , Hung-Wen Chiou
IPC分类号： C09K1300
CPC分类号： C09K3/1463 , C09G1/02
摘要： The invention provides a chemical-mechanical abrasive composition for semiconductor processing, which composition is characterized by comprising a water-soluble anionic chemical. According to the invention, said water-soluble anionic chemical would be coated on the surface of a metal film during the polishing of said metal film so as to inhibit the formation of depressions on the resultant metal circuits. In another aspect, the invention provides a chemical-mechanical abrasive composition in the form of a slurry comprising 70-99.5% by weight of an aqueous medium; 0.1-25% by weight of an abrasive particle; 0.01-2.0% by weight of an abrasion enhancer; and 0.01-1% by weight of a water-soluble anionic chemical. The chemical-mechanical abrasive composition of the invention may further comprise an oxidant to enhance the abrasion rate.
摘要翻译：本发明提供了用于半导体加工的化学 - 机械磨料组合物，该组合物的特征在于包含水溶性阴离子化学品。根据本发明，在抛光所述金属膜期间，所述水溶性阴离子化合物将被涂覆在金属膜的表面上，以便抑制在所得金属电路上形成凹陷。在另一方面，本发明提供了一种包含70-99.5重量％的水性介质的浆料形式的化学机械磨料组合物; 0.1-25重量％的磨料颗粒; 0.01-2.0重量％的磨损增强剂; 和0.01-1重量％的水溶性阴离子化合物。本发明的化学 - 机械磨料组合物还可以包含氧化剂以增强磨损速率。

2. 发明授权

US06436834B1 Chemical-mechanical abrasive composition and method 有权
标题翻译：化学机械磨料组成及方法
公开(公告)号：US06436834B1
公开(公告)日：2002-08-20
申请号：US09611831
申请日：2000-07-07
申请人： Tsung-Ho Lee , Kang-Hua Lee , Tsui-Ping Yeh
发明人： Tsung-Ho Lee , Kang-Hua Lee , Tsui-Ping Yeh
IPC分类号： H01L2100
CPC分类号： C09G1/02 , H01L21/31053 , H01L21/3212
摘要： The invention provides a chemical-mechanical abrasive composition for use in semiconductor processing, which comprises an aqueous medium, an abrasive, and an abrasion accelerator. The abrasion accelerator mainly functions to enhance the removal rate of the substances to be removed, and selected from the compounds of the following formula, the acid-addition salts thereof, or mixtures of two or more of the foregoing compounds and salts: wherein X and Y are independently lone-pair electrons containing atoms or atomic groups; and R1 and R2 are independently H, alky, amino, aminoalkyl, or alkoxy. The chemical-mechanical abrasive composition of the invention may optionally comprise an acidic component and/or a salt thereof, so as to further enhance the abrasion rate. The invention further provides a method of using the above chemical-mechanical abrasive composition for polishing the surface of a semiconductor wafer.
摘要翻译：本发明提供一种用于半导体加工的化学机械磨料组合物，其包括水性介质，研磨剂和磨蚀促进剂。磨损促进剂主要起增强除去物质的去除率的作用，选自下式的化合物，其酸加成盐，或两种或多种前述化合物和盐的混合物：其中X和 Y独立为含有原子或原子团的孤对电子; 并且R 1和R 2独立地为H，烷基，氨基，氨基烷基或烷氧基。本发明的化学 - 机械研磨组合物可以任选地包含酸性组分和/或其盐，以进一步提高磨损率。本发明还提供了使用上述化学机械研磨组合物来抛光半导体晶片的表面的方法。

3. 发明授权

US06508952B1 Chemical mechanical abrasive composition for use in semiconductor processing 有权
标题翻译：用于半导体加工的化学机械磨料组合物
公开(公告)号：US06508952B1
公开(公告)日：2003-01-21
申请号：US09457243
申请日：1999-12-08
申请人： Tsung-Ho Lee , Kang-Hua Lee , Tsui-Ping Yeh
发明人： Tsung-Ho Lee , Kang-Hua Lee , Tsui-Ping Yeh
IPC分类号： C09K1300
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The invention provides a chemical mechanical abrasive composition for use in semiconductor processing, which comprises phosphorous acid and/or a salt thereof as an abrasive enhancer. The chemical mechanical abrasive composition of the invention can be in the form of a slurry which comprises 70-99.5% by weight of an aqueous medium, 0.1-25% by weight of an abrasive, and 0.01-2% by weight of said abrasion enhancer. The chemical mechanical abrasive composition of the invention may further comprise an abrasion co-enhancer selected from an amino acid, a salt thereof, a carboxylic acid, a salt thereof, or a mixture of the acids and/or salts.
摘要翻译：本发明提供一种用于半导体加工的化学机械研磨组合物，其包含亚磷酸和/或其盐作为研磨增强剂。本发明的化学机械磨料组合物可以是浆料的形式，其包含70-99.5重量％的水性介质，0.1-25重量％的研磨剂和0.01-2重量％的所述磨损增强剂。本发明的化学机械磨料组合物还可以包含选自氨基酸，其盐，羧酸，其盐或酸和/或盐的混合物的磨损辅助增强剂。

4. 发明授权

US06171352B2 Chemical mechanical abrasive composition for use in semiconductor processing 有权
标题翻译：用于半导体加工的化学机械磨料组合物
公开(公告)号：US06171352B2
公开(公告)日：2001-01-09
申请号：US09268193
申请日：1999-03-15
申请人： Tsung-Ho Lee , Tsui-Ping Yeh
发明人： Tsung-Ho Lee , Tsui-Ping Yeh
IPC分类号： C09G102
CPC分类号： C09G1/02 , C09K3/1463 , H01L21/3212
摘要： The invention provides a chemical-mechanical abrasive composition for use in semiconductor processing, which comprises 70-95% by weight of an aqueous medium, 1-25% by weight of an abrasive, 0.1-20% by weight of an abrasion accelerator, wherein the abrasion accelerator comprises monocarboxy group- or an amido group-containing compound and optionally a nitrate salt. The chemical-mechanical abrasive composition of the invention can further comprise an anionic surfactant, e.g. polycarboxylic acid or polyacrylic acid copolymer, so as to reduce the viscosity of the abrasive composition.
摘要翻译：本发明提供一种用于半导体加工的化学机械磨料组合物，其包含70-95重量％的水性介质，1-25重量％的研磨剂，0.1-20重量％的磨蚀促进剂，其中磨耗促进剂包括单羧基或含酰氨基的化合物和任选的硝酸盐。本发明的化学 - 机械磨料组合物还可以包含阴离子表面活性剂，例如多羧酸或聚丙烯酸共聚物，以降低研磨组合物的粘度。

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