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1. 再颁专利

USRE45165E1 Structure for a multiple-gate FET device and a method for its fabrication 有权
公开(公告)号：USRE45165E1
公开(公告)日：2014-09-30
申请号：US13372622
申请日：2012-02-14
申请人： Hung-Wei Chen , Tang-Xuan Zhong , Sheng-Da Liu , Chang-Yu Chang , Ping-Kun Wu , Chao-Hsiung Wang , Fu-Liang Yang
发明人： Hung-Wei Chen , Tang-Xuan Zhong , Sheng-Da Liu , Chang-Yu Chang , Ping-Kun Wu , Chao-Hsiung Wang , Fu-Liang Yang
IPC分类号： H01L23/12 , H01L23/053 , H01L29/06 , H01L27/085 , H01L29/04
CPC分类号： H01L29/1079 , H01L21/823412 , H01L21/823431 , H01L21/823437 , H01L21/823456 , H01L29/66795 , H01L29/7831 , H01L29/7851 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a semiconductor device and a device made using the method are provided. In one example, the method includes forming a hard mask layer on a semiconductor substrate and patterning the hard mask layer to form multiple openings. The substrate is etched through the openings to form forming a plurality of trenches separating multiple semiconductor mesas. The trenches are partially filled with a dielectric material. The hard mask layer is removed and multiple-gate features are formed, with each multiple-gate feature being in contact with a top surface and sidewalls of at least one of the semiconductor mesas.

2. 再颁专利

USRE45180E1 Structure for a multiple-gate FET device and a method for its fabrication 有权
标题翻译：多栅极FET器件的结构及其制造方法
公开(公告)号：USRE45180E1
公开(公告)日：2014-10-07
申请号：US12792373
申请日：2010-06-02
申请人： Hung-Wei Chen , Tang-Xuan Zhong , Sheng-Da Liu , Chang-Yun Chang , Ping-Kun Wu , Chao-Hsiung Wang , Fu-Liang Yang
发明人： Hung-Wei Chen , Tang-Xuan Zhong , Sheng-Da Liu , Chang-Yun Chang , Ping-Kun Wu , Chao-Hsiung Wang , Fu-Liang Yang
IPC分类号： H01L21/311 , H01L21/00 , H01L21/84 , H01L21/8238 , H01L21/336 , H01L27/085 , H01L29/06 , H01L29/04
CPC分类号： H01L21/823437 , H01L21/823412 , H01L21/823431 , H01L21/823456 , H01L29/66795 , H01L29/7851
摘要： A method for forming a semiconductor device and a device made using the method are provided. In one example, the method includes forming a hard mask layer on a semiconductor substrate and patterning the hard mask layer to form multiple openings. The substrate is etched through the openings to form forming a plurality of trenches separating multiple semiconductor mesas. The trenches are partially filled with a dielectric material. The hard mask layer is removed and multiple-gate features are formed, with each multiple-gate feature being in contact with a top surface and sidewalls of at least one of the semiconductor mesas.
摘要翻译：提供了一种用于形成半导体器件的方法和使用该方法制造的器件。在一个示例中，该方法包括在半导体衬底上形成硬掩模层并且图案化硬掩模层以形成多个开口。通过开口蚀刻衬底以形成分离多个半导体台面的多个沟槽。沟槽部分地填充有电介质材料。去除硬掩模层并形成多栅极特征，其中每个多栅极特征与至少一个半导体台面的顶表面和侧壁接触。

3. 发明授权

US07381649B2 Structure for a multiple-gate FET device and a method for its fabrication 有权
标题翻译：多栅极FET器件的结构及其制造方法
公开(公告)号：US07381649B2
公开(公告)日：2008-06-03
申请号：US11192494
申请日：2005-07-29
申请人： Hung-Wei Chen , Tang-Xuan Zhong , Sheng-Da Liu , Chang-Yun Chang , Ping-Kun Wu , Chao-Hsiung Wang , Fu-Liang Yang
发明人： Hung-Wei Chen , Tang-Xuan Zhong , Sheng-Da Liu , Chang-Yun Chang , Ping-Kun Wu , Chao-Hsiung Wang , Fu-Liang Yang
IPC分类号： H01L21/00
CPC分类号： H01L21/823437 , H01L21/823412 , H01L21/823431 , H01L21/823456 , H01L29/66795 , H01L29/7851
摘要： A method for forming a semiconductor device and a device made using the method are provided. In one example, the method includes forming a hard mask layer on a semiconductor substrate and patterning the hard mask layer to form multiple openings. The substrate is etched through the openings to form forming a plurality of trenches separating multiple semiconductor mesas. The trenches are partially filled with a dielectric material. The hard mask layer is removed and multiple-gate features are formed, with each multiple-gate feature being in contact with a top surface and sidewalls of at least one of the semiconductor mesas.
摘要翻译：提供了一种用于形成半导体器件的方法和使用该方法制造的器件。在一个示例中，该方法包括在半导体衬底上形成硬掩模层并且图案化硬掩模层以形成多个开口。通过开口蚀刻衬底以形成分离多个半导体台面的多个沟槽。沟槽部分地填充有电介质材料。去除硬掩模层并形成多栅极特征，其中每个多栅极特征与至少一个半导体台面的顶表面和侧壁接触。

4. 发明申请

US20070026629A1 Novel structure for a multiple-gate FET device and a method for its fabrication 有权
标题翻译：用于多栅极FET器件的新型结构及其制造方法
公开(公告)号：US20070026629A1
公开(公告)日：2007-02-01
申请号：US11192494
申请日：2005-07-29
申请人： Hung-Wei Chen , Tang-Xuan Zhong , Sheng-Da Liu
发明人： Hung-Wei Chen , Tang-Xuan Zhong , Sheng-Da Liu
IPC分类号： H01L21/76 , H01L21/302
CPC分类号： H01L21/823437 , H01L21/823412 , H01L21/823431 , H01L21/823456 , H01L29/66795 , H01L29/7851
摘要： A method for forming a semiconductor device and a device made using the method are provided. In one example, the method includes forming a hard mask layer on a semiconductor substrate and patterning the hard mask layer to form multiple openings. The substrate is etched through the openings to form forming a plurality of trenches separating multiple semiconductor mesas. The trenches are partially filled with a dielectric material. The hard mask layer is removed and multiple-gate features are formed, with each multiple-gate feature being in contact with a top surface and sidewalls of at least one of the semiconductor mesas.
摘要翻译：提供了一种用于形成半导体器件的方法和使用该方法制造的器件。在一个示例中，该方法包括在半导体衬底上形成硬掩模层并且图案化硬掩模层以形成多个开口。通过开口蚀刻衬底以形成分离多个半导体台面的多个沟槽。沟槽部分地填充有电介质材料。去除硬掩模层并形成多栅极特征，其中每个多栅极特征与至少一个半导体台面的顶表面和侧壁接触。

5. 发明申请

US20080296702A1 Integrated circuit structures with multiple FinFETs 有权
标题翻译：具有多个FinFET的集成电路结构
公开(公告)号：US20080296702A1
公开(公告)日：2008-12-04
申请号：US11807652
申请日：2007-05-30
申请人： Tsung-Lin Lee , Chang-Yun Chang , Sheng-Da Liu , Fu-Liang Yang
发明人： Tsung-Lin Lee , Chang-Yun Chang , Sheng-Da Liu , Fu-Liang Yang
IPC分类号： H01L29/76
CPC分类号： H01L21/823437 , H01L21/823431 , H01L21/845 , H01L27/088 , H01L27/1211 , H01L29/165 , H01L29/41791 , H01L29/66795 , H01L29/7843 , H01L29/7848 , H01L29/785 , H01L29/7851
摘要： A semiconductor structure includes a semiconductor substrate; and a first Fin field-effect transistor (FinFET) and a second FinFET at a surface of the semiconductor substrate. The first FinFET includes a first fin; and a first gate electrode over a top surface and sidewalls of the first fin. The second FinFET includes a second fin spaced apart from the first fin by a fin space; and a second gate electrode over a top surface and sidewalls of the second fin. The second gate electrode is electrically disconnected from the first gate electrode. The first and the second gate electrodes have a gate height greater than about one half of the fin space.
摘要翻译：半导体结构包括半导体衬底; 以及在半导体衬底的表面处的第一Fin场效应晶体管（FinFET）和第二FinFET。第一个FinFET包括第一个鳍; 以及在第一鳍的顶表面和侧壁上的第一栅电极。第二FinFET包括通过鳍片空间与第一鳍片间隔开的第二鳍片; 以及在第二鳍的顶表面和侧壁上的第二栅电极。第二栅电极与第一栅电极电断开。第一和第二栅电极具有大于翅片空间的约一半的栅极高度。

6. 发明授权

US08174073B2 Integrated circuit structures with multiple FinFETs 有权
标题翻译：具有多个FinFET的集成电路结构
公开(公告)号：US08174073B2
公开(公告)日：2012-05-08
申请号：US11807652
申请日：2007-05-30
申请人： Tsung-Lin Lee , Chang-Yun Chang , Sheng-Da Liu , Fu-Liang Yang
发明人： Tsung-Lin Lee , Chang-Yun Chang , Sheng-Da Liu , Fu-Liang Yang
IPC分类号： H01L27/12
CPC分类号： H01L21/823437 , H01L21/823431 , H01L21/845 , H01L27/088 , H01L27/1211 , H01L29/165 , H01L29/41791 , H01L29/66795 , H01L29/7843 , H01L29/7848 , H01L29/785 , H01L29/7851
摘要： A semiconductor structure includes a semiconductor substrate; and a first Fin field-effect transistor (FinFET) and a second FinFET at a surface of the semiconductor substrate. The first FinFET includes a first fin; and a first gate electrode over a top surface and sidewalls of the first fin. The second FinFET includes a second fin spaced apart from the first fin by a fin space; and a second gate electrode over a top surface and sidewalls of the second fin. The second gate electrode is electrically disconnected from the first gate electrode. The first and the second gate electrodes have a gate height greater than about one half of the fin space.
摘要翻译：半导体结构包括半导体衬底; 以及在半导体衬底的表面处的第一Fin场效应晶体管（FinFET）和第二FinFET。第一个FinFET包括第一个鳍; 以及在第一鳍的顶表面和侧壁上的第一栅电极。第二FinFET包括通过鳍片空间与第一鳍片间隔开的第二鳍片; 以及在第二鳍的顶表面和侧壁上的第二栅电极。第二栅电极与第一栅电极电断开。第一和第二栅电极具有大于翅片空间的约一半的栅极高度。

7. 发明授权

US07883979B2 Method for manufacturing a semiconductor device with reduced floating body effect 有权
标题翻译：制造具有减小的浮体效应的半导体器件的方法
公开(公告)号：US07883979B2
公开(公告)日：2011-02-08
申请号：US10973966
申请日：2004-10-26
申请人： Hung-Wei Chen , Zhong Tang Xuan , Shui-Ming Cheng , Sheng-Da Liu
发明人： Hung-Wei Chen , Zhong Tang Xuan , Shui-Ming Cheng , Sheng-Da Liu
IPC分类号： H01L21/336
CPC分类号： H01L29/7848 , H01L21/26513 , H01L21/2658 , H01L21/84 , H01L27/1203 , H01L29/165 , H01L29/665 , H01L29/6653 , H01L29/66628 , H01L29/66636 , H01L29/78621 , H01L29/78684 , Y10S438/933
摘要： A semiconductor device includes a substrate, a first device situated on the substrate, the first device including a source and a drain each situated extending a first depth within the substrate, and a second device situated on the substrate, the second device including a source and a drain each situated extending a second depth within the substrate, the second depth not equal to the first depth.
摘要翻译：半导体器件包括衬底，位于衬底上的第一器件，第一器件包括源和漏极，每个源极和漏极都位于衬底内延伸第一深度，第二器件位于衬底上，第二器件包括源极和一个排水口，每个位于在衬底内延伸第二深度，第二深度不等于第一深度。

8. 发明申请

US20060086987A1 Method for manufacturing a semiconductor device with reduced floating body effect 有权
标题翻译：制造具有减小的浮体效应的半导体器件的方法
公开(公告)号：US20060086987A1
公开(公告)日：2006-04-27
申请号：US10973966
申请日：2004-10-26
申请人： Hung-Wei Chen , Zhong Xuan , Shui-Ming Cheng , Sheng-Da Liu
发明人： Hung-Wei Chen , Zhong Xuan , Shui-Ming Cheng , Sheng-Da Liu
IPC分类号： H01L29/78 , H01L21/8238
CPC分类号： H01L29/7848 , H01L21/26513 , H01L21/2658 , H01L21/84 , H01L27/1203 , H01L29/165 , H01L29/665 , H01L29/6653 , H01L29/66628 , H01L29/66636 , H01L29/78621 , H01L29/78684 , Y10S438/933
摘要： A semiconductor device includes a substrate, a first device situated on the substrate, the first device including a source and a drain each situated extending a first depth within the substrate, and a second device situated on the substrate, the second device including a source and a drain each situated extending a second depth within the substrate, the second depth not equal to the first depth.
摘要翻译：半导体器件包括衬底，位于衬底上的第一器件，第一器件包括源和漏极，每个源极和漏极都位于衬底内延伸第一深度，第二器件位于衬底上，第二器件包括源极和一个排水口，每个位于在衬底内延伸第二深度，第二深度不等于第一深度。

9. 发明申请

US20070080387A1 Method and structure for a 1T-RAM bit cell and macro 有权
标题翻译： 1T-RAM位元和宏的方法和结构
公开(公告)号：US20070080387A1
公开(公告)日：2007-04-12
申请号：US11246318
申请日：2005-10-07
申请人： Sheng-Da Liu , Hung-Wei Chen , Chang-Yun Chang , Zhong Xuan , Ju-Wang Hsu
发明人： Sheng-Da Liu , Hung-Wei Chen , Chang-Yun Chang , Zhong Xuan , Ju-Wang Hsu
IPC分类号： H01L27/108
CPC分类号： H01L28/82 , H01L21/845 , H01L27/10823 , H01L27/10826 , H01L27/10879 , H01L27/10894 , H01L27/10897 , H01L27/1211 , H01L29/66795 , H01L29/785
摘要： A one transistor (1T-RAM) bit cell and method for manufacture are provided. A metal-insulator-metal (MIM) capacitor structure and method of manufacturing it in an integrated process that includes a finFET transistor for the 1T-RAM bit cell is provided. In some embodiments, the finFET transistor and MIM capacitor are formed in a memory region and an asymmetric processing method is disclosed, which allows planar MOSFET transistors to be formed in another region of a single device. In some embodiments, the 1T-RAM cell and additional transistors may be combined to form a macro cell, multiple macro cells may form an integrated circuit. The MIM capacitors may include nanoparticles or nanostructures to increase the effective capacitance. The finFET transistors may be formed over an insulator. The MIM capacitors may be formed in interlevel insulator layers above the substrate. The process provided to manufacture the structure may advantageously use conventional photomasks.
摘要翻译：提供一个晶体管（1T-RAM）位单元及其制造方法。提供了一种金属 - 绝缘体金属（MIM）电容器结构及其制造方法，其集成工艺包括用于1T-RAM位元的finFET晶体管。在一些实施例中，finFET晶体管和MIM电容器形成在存储区域中，并且公开了一种不对称处理方法，其允许在单个器件的另一个区域中形成平面MOSFET晶体管。在一些实施例中，可以组合1T-RAM单元和附加晶体管以形成宏小区，多个宏小区可以形成集成电路。 MIM电容器可以包括纳米颗粒或纳米结构以增加有效电容。 finFET晶体管可以形成在绝缘体上。 MIM电容器可以形成在衬底上方的层间绝缘体层中。提供用于制造结构的方法可以有利地使用常规的光掩模。

10. 发明授权

US07425740B2 Method and structure for a 1T-RAM bit cell and macro 有权
标题翻译： 1T-RAM位元和宏的方法和结构
公开(公告)号：US07425740B2
公开(公告)日：2008-09-16
申请号：US11246318
申请日：2005-10-07
申请人： Sheng-Da Liu , Hung-Wei Chen , Chang-Yun Chang , Zhong Tang Xuan , Ju-Wang Hsu
发明人： Sheng-Da Liu , Hung-Wei Chen , Chang-Yun Chang , Zhong Tang Xuan , Ju-Wang Hsu
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L27/01 , H01L27/12
CPC分类号： H01L28/82 , H01L21/845 , H01L27/10823 , H01L27/10826 , H01L27/10879 , H01L27/10894 , H01L27/10897 , H01L27/1211 , H01L29/66795 , H01L29/785
摘要： A one transistor (1T-RAM) bit cell and method for manufacture are provided. A metal-insulator-metal (MIM) capacitor structure and method of manufacturing it in an integrated process that includes a finFET transistor for the 1T-RAM bit cell is provided. In some embodiments, the finFET transistor and MIM capacitor are formed in a memory region and an asymmetric processing method is disclosed, which allows planar MOSFET transistors to be formed in another region of a single device. In some embodiments, the 1T-RAM cell and additional transistors may be combined to form a macro cell, multiple macro cells may form an integrated circuit. The MIM capacitors may include nanoparticles or nanostructures to increase the effective capacitance. The finFET transistors may be formed over an insulator. The MIM capacitors may be formed in interlevel insulator layers above the substrate. The process provided to manufacture the structure may advantageously use conventional photomasks.
摘要翻译：提供一个晶体管（1T-RAM）位单元及其制造方法。提供了一种金属 - 绝缘体金属（MIM）电容器结构及其制造方法，其集成工艺包括用于1T-RAM位元的finFET晶体管。在一些实施例中，finFET晶体管和MIM电容器形成在存储区域中，并且公开了一种不对称处理方法，其允许在单个器件的另一个区域中形成平面MOSFET晶体管。在一些实施例中，可以组合1T-RAM单元和附加晶体管以形成宏小区，多个宏小区可以形成集成电路。 MIM电容器可以包括纳米颗粒或纳米结构以增加有效电容。 finFET晶体管可以形成在绝缘体上。 MIM电容器可以形成在衬底上方的层间绝缘体层中。提供用于制造结构的方法可以有利地使用常规的光掩模。

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