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1. 发明授权

US06878642B1 Method to improve passivation openings by reflow of photoresist to eliminate tape residue 失效
标题翻译：通过光刻胶回流来改善钝化开口以消除胶带残留的方法
公开(公告)号：US06878642B1
公开(公告)日：2005-04-12
申请号：US09679514
申请日：2000-10-06
申请人： Hung-Jen Hsu , Yu-Kung Hsiao , Chih-Kung Chang , Sheng-Liang Pan , Kuo-Liang Lu
发明人： Hung-Jen Hsu , Yu-Kung Hsiao , Chih-Kung Chang , Sheng-Liang Pan , Kuo-Liang Lu
IPC分类号： H01L21/311 , H01L21/31
CPC分类号： H01L21/31116 , H01L23/3171 , H01L2224/11472
摘要： A new method to form passivation openings in the manufacture of an integrated circuit device is achieved. The passivation openings have gradually sloping sidewalls that allow a protective tape to be completely removed without leaving adhesive residue. A semiconductor substrate is provided. A passivation layer is deposited. An organic photoresist layer is deposited overlying the passivation layer. The organic photoresist layer is patterned to expose the passivation layer in areas where passivation openings are planned. The organic photoresist layer is reflowed to create gradually sloping sidewalls on the organic photoresist layer. The passivation layer is etched through to from the passivation openings. The passivation openings are thereby formed with gradually sloping sidewalls. The organic photoresist layer is stripped away. A protective tape is applied overlying the passivation layer and the passivation openings. The protective tape is removed. The gradually sloping sidewalls on the passivation openings allow the protective tape to be completely removed without leaving adhesive residue in the manufacture of the integrated circuit device.
摘要翻译：实现了在制造集成电路器件中形成钝化开口的新方法。钝化开口具有逐渐倾斜的侧壁，其允许完全去除保护带而不留下粘合剂残留物。提供半导体衬底。沉积钝化层。沉积在钝化层上的有机光致抗蚀剂层。有机光致抗蚀剂层被图案化以在钝化开口被计划的区域中露出钝化层。有机光致抗蚀剂层被回流以在有机光致抗蚀剂层上产生逐渐倾斜的侧壁。从钝化开口蚀刻钝化层。因此钝化开口由逐渐倾斜的侧壁形成。剥离有机光致抗蚀剂层。施加保护带覆盖钝化层和钝化开口。取下保护胶带。钝化开口上逐渐倾斜的侧壁允许保护带被完全去除，而不会在集成电路器件的制造中留下残留粘合剂。

2. 发明授权

US07071032B2 Material to improve image sensor yield during wafer sawing 失效
标题翻译：材料可以提高晶圆锯切时的图像传感器产量
公开(公告)号：US07071032B2
公开(公告)日：2006-07-04
申请号：US10431275
申请日：2003-05-07
申请人： Hung-Jen Hsu , Yu-Kung Hsiao , Chih-Kung Chang , Sheng-Liang Pan , Fu-Tien Weng
发明人： Hung-Jen Hsu , Yu-Kung Hsiao , Chih-Kung Chang , Sheng-Liang Pan , Fu-Tien Weng
IPC分类号： H01L21/44 , H01L21/48 , H01L21/50
CPC分类号： H01L21/6836 , H01L21/78 , H01L27/14683 , H01L2221/68327
摘要： A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.
摘要翻译：提供了一种新的方法，在将晶片分离成单独的芯片的过程之前处理晶片。已经在其上形成CMOS图像传感器装置的晶片的第一表面涂覆有不溶于水的材料层。通过使晶片的第二表面与带接触而将晶片附接到带。通过接近晶片的第一表面并通过首先穿过已经涂覆在晶片的第一表面上的材料层，然后通过晶片锯切，停止在带的表面，将晶片分离。将彻底的水冲洗施加到单片晶片的表面，接着进行晶片清洁以应用特定的化学品用于此目的。单片模具现在从胶带中取出并通过将模具安装，引线接合，将模具包围在模具化合物中并标记包装件的步骤进一步处理。

3. 发明授权

US06849533B2 Method for fabricating microelectronic product with attenuated bond pad corrosion 有权
标题翻译：用于制造具有减弱的焊盘腐蚀的微电子产品的方法
公开(公告)号：US06849533B2
公开(公告)日：2005-02-01
申请号：US10354697
申请日：2003-01-29
申请人： Chih-Kung Chang , Yu-Kung Hsiao , Sheng-Liang Pan , Fu-Tien Wong , Chin-Chen Kuo , Chung-Sheng Hsiung , Hung-Jen Hsu , Yi-Ming Dai , Po-Wen Lin , Te-Fu Tseng
发明人： Chih-Kung Chang , Yu-Kung Hsiao , Sheng-Liang Pan , Fu-Tien Wong , Chin-Chen Kuo , Chung-Sheng Hsiung , Hung-Jen Hsu , Yi-Ming Dai , Po-Wen Lin , Te-Fu Tseng
IPC分类号： H01L21/44 , H01L21/60
CPC分类号： H01L24/11 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L2224/13099 , H01L2924/01013 , H01L2924/01015 , H01L2924/01033 , H01L2924/12043 , H01L2924/14 , H01L2924/15787 , H01L2924/19042 , H01L2924/00
摘要： A method for fabricating a microelectronic product provides for forming a planarizing layer upon a bond pad and a topographic feature, both formed laterally separated over a substrate. The planarizing layer is formed with a diminished thickness upon the bond pad such that it may be readily etched to expose the bond pad while employing as a mask an additional layer formed over the topographic feature but not over the bond pad. The method is particularly useful for forming color filter sensor image array optoelectronic products with attenuated bond pad corrosion.
摘要翻译：用于制造微电子产品的方法提供了在接合焊盘和地形特征上形成平坦化层，两者均形成在衬底上横向分离。平坦化层在接合焊盘上形成为具有减小的厚度，使得其可以容易地蚀刻以暴露接合焊盘，同时使用形成在地形特征上但不在接合焊盘上的附加层作为掩模。该方法对于形成具有减弱的键合垫腐蚀的滤色器传感器图像阵列光电产品特别有用。

4. 发明授权

US06759276B1 Material to improve CMOS image sensor yield during wafer sawing 有权
标题翻译：在晶圆锯切期间提高CMOS图像传感器产量的材料
公开(公告)号：US06759276B1
公开(公告)日：2004-07-06
申请号：US10209149
申请日：2002-07-30
申请人： Hung-Jen Hsu , Yu-Kung Hsiao , Chih-Kung Chang , Sheng-Liang Pan
发明人： Hung-Jen Hsu , Yu-Kung Hsiao , Chih-Kung Chang , Sheng-Liang Pan
IPC分类号： H01L2144
CPC分类号： H01L27/14632 , H01L27/14627 , H01L27/14687
摘要： A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is singulated by sawing through the layer of material that has been coated over the surface of the wafer and by then sawing through the wafer. The singulated die is then further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.
摘要翻译：提供了一种新的方法，在将晶片分离成单独的芯片的过程之前处理晶片。已经在其上形成CMOS图像传感器装置的晶片的表面涂覆有不溶于水的材料层。通过锯切已经涂覆在晶片表面上的材料层，然后通过晶片锯切将晶片分割。然后通过将模具安装，引线接合，将模具包围在模具化合物中并标记包装件的步骤进一步处理单模模具。

5. 发明授权

US07507598B2 Image sensor fabrication method and structure 有权
标题翻译：图像传感器制造方法和结构
公开(公告)号：US07507598B2
公开(公告)日：2009-03-24
申请号：US11156794
申请日：2005-06-20
申请人： Fu-Tien Weng , Yu-Kung Hsiao , Hung-Jen Hsu , Yi-Ming Dai , Chin Chen Kuo , Te-Fu Tseng , Chih-Kung Chang , Jack Deng , Chung-Sheng Hsiung , Bii-Junq Chang
发明人： Fu-Tien Weng , Yu-Kung Hsiao , Hung-Jen Hsu , Yi-Ming Dai , Chin Chen Kuo , Te-Fu Tseng , Chih-Kung Chang , Jack Deng , Chung-Sheng Hsiung , Bii-Junq Chang
IPC分类号： H01L21/00
CPC分类号： H01L27/14625 , H01L23/544 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.
摘要翻译：提供了一种处理衬底的方法。衬底具有至少一个滤波器区域，多个接合焊盘以及围绕滤波器区域和接合焊盘布置的多个划线。在衬底上形成第一平坦化层。平坦化层具有覆盖过滤器区域，接合焊盘和划线的基本平坦的顶表面。在第一平坦化层和滤波器区域内形成至少一个抗蚀剂层，同时第一平坦化层覆盖接合焊盘和划线。

6. 发明授权

US08129762B2 Image sensor 有权
标题翻译：图像传感器
公开(公告)号：US08129762B2
公开(公告)日：2012-03-06
申请号：US12347427
申请日：2008-12-31
申请人： Fu-Tien Weng , Yu-Kung Hsiao , Hung-Jen Hsu , Yi-Ming Dai , Chin Chen Kuo , Te-Fu Tseng , Chih-Kung Chang , Jack Deng , Chung-Sheng Hsiung , Bii-Junq Chang
发明人： Fu-Tien Weng , Yu-Kung Hsiao , Hung-Jen Hsu , Yi-Ming Dai , Chin Chen Kuo , Te-Fu Tseng , Chih-Kung Chang , Jack Deng , Chung-Sheng Hsiung , Bii-Junq Chang
IPC分类号： H01L27/148
CPC分类号： H01L27/14625 , H01L23/544 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.
摘要翻译：提供了一种处理衬底的方法。衬底具有至少一个滤波器区域，多个接合焊盘以及围绕滤波器区域和接合焊盘布置的多个划线。在衬底上形成第一平坦化层。平坦化层具有覆盖过滤器区域，接合焊盘和划线的基本平坦的顶表面。在第一平坦化层和滤波器区域内形成至少一个抗蚀剂层，同时第一平坦化层覆盖接合焊盘和划线。

7. 发明授权

US06660641B1 Method for forming crack resistant planarizing layer within microelectronic fabrication 有权
标题翻译：在微电子制造中形成抗裂平面化层的方法
公开(公告)号：US06660641B1
公开(公告)日：2003-12-09
申请号：US10190273
申请日：2002-07-05
申请人： Chin Chen Kuo , Sheng Liang Pan , Yu-Kung Hsiao , Chih-Kung Chang , Fu-Tien Wong , Chung Sheng Hsiung
发明人： Chin Chen Kuo , Sheng Liang Pan , Yu-Kung Hsiao , Chih-Kung Chang , Fu-Tien Wong , Chung Sheng Hsiung
IPC分类号： H01L21311
CPC分类号： H01L21/31053 , G03F7/094 , H01L27/14685
摘要： Within a method for forming a planarizing layer within a microelectronic fabrication, there is employed formed upon a partially photoexposed planarizing layer formed of a partially photoexposed negative photoresist material a sacrificial layer. Within the method, when sequentially: (1) stripping from the partially photoexposed planarizing layer the sacrificial layer; and (2) developing the partially photoexposed planarizing layer to form a developed planarizing layer, the developed planarizing layer is formed with enhanced planarity and diminished thickness.
摘要翻译：在用于在微电子制造中形成平坦化层的方法中，使用由部分光曝光的负光致抗蚀剂材料形成的部分光致曝光的平坦化层形成牺牲层。在该方法中，当顺序地：（1）从部分光刻的平坦化层剥离牺牲层; 和（2）显影部分光刻的平坦化层以形成显影的平坦化层，显影的平坦化层形成具有增强的平面性和减小的厚度。

8. 发明授权

US06395576B1 High efficiency color filter process to improve color balance in semiconductor array imaging devices 有权
标题翻译：高效率的彩色滤光片工艺可以改善半导体阵列成像装置的色彩平衡
公开(公告)号：US06395576B1
公开(公告)日：2002-05-28
申请号：US09593537
申请日：2000-06-14
申请人： Chih-Kung Chang , Yu-Kung Hsiao , Sheng-Liang Pan , Bii-Junq Chang
发明人： Chih-Kung Chang , Yu-Kung Hsiao , Sheng-Liang Pan , Bii-Junq Chang
IPC分类号： H01L2100
CPC分类号： H01L27/14609 , H01L27/14621 , H01L27/14623 , H01L27/14627
摘要： Formation of integrated color filters for gain-ratio balanced semiconductor array imagers using a spectrophotometric feedback control loop to adjust layer thickness during the deposition process is disclosed. The fabrication sequence of G/R/B conventionally used in Prior Art has been changed to B/R/G or B/G/R to enable the process to adapt to yielding specified color gain-ratio values without the need for integrated circuit redesign. A high efficiency color filter process is demonstrated wherein the additional neutral-density attenuator layers and/or spacer layers required in Prior Art fabrication methods are eliminated. The disclosed process is shown to enable high-precision thickness control of the color filter layers. Blue coating lift-off problems and the steric effect associated with successive depositions of color layers having step-height variations are eliminated. Statistical process control (SPC) is optimized by calibration of the color balance gain-ratio using the product photodiode arrays and amplifier integrated circuits with a real-time spectrophotometric feedback control-loop during the dye or pigment layer deposition process.
摘要翻译：公开了用于增益比平衡的半导体阵列成像器的集成滤色器的形成，其使用分光光度反馈控制环来在沉积过程中调节层厚度。现有技术中常规使用的G / R / B的制造顺序已经改变为B / R / G或B / G / R，以使该工艺适应于产生指定的颜色增益比值，而不需要集成电路重新设计。证明了高效率滤色器工艺，其中消除了现有技术制造方法中所需的附加中性密度衰减器层和/或间隔层。所公开的过程被示出为使得能够对滤色器层进行高精度的厚度控制。消除蓝色涂层剥离问题和与具有阶跃高度变化的彩色层的连续沉积相关的空间效应。通过使用产品光电二极管阵列和放大器集成电路通过在染料或颜料层沉积过程中具有实时分光光度反馈控制环来校准色平衡增益比来优化统计过程控制（SPC）。

9. 发明申请

US20090104547A1 IMAGE SENSOR 有权
标题翻译：图像传感器
公开(公告)号：US20090104547A1
公开(公告)日：2009-04-23
申请号：US12347427
申请日：2008-12-31
申请人： Fu-Tien Weng , Yu-Kung Hsiao , Hung-Jen Hsu , Yi-Ming Dai , Chin Chen Kuo , Te-Fu Tseng , Chih-Kung Chang , Jack Deng , Chung-Sheng Hsiung , Bii-Junq Chang
发明人： Fu-Tien Weng , Yu-Kung Hsiao , Hung-Jen Hsu , Yi-Ming Dai , Chin Chen Kuo , Te-Fu Tseng , Chih-Kung Chang , Jack Deng , Chung-Sheng Hsiung , Bii-Junq Chang
IPC分类号： G03F3/00
CPC分类号： H01L27/14625 , H01L23/544 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.
摘要翻译：提供了一种处理衬底的方法。衬底具有至少一个滤波器区域，多个接合焊盘以及围绕滤波器区域和接合焊盘布置的多个划线。在衬底上形成第一平坦化层。平坦化层具有覆盖过滤器区域，接合焊盘和划线的基本平坦的顶表面。在第一平坦化层和滤波器区域内形成至少一个抗蚀剂层，同时第一平坦化层覆盖接合焊盘和划线。

10. 发明申请

US20060019424A1 Image sensor fabrication method and structure 有权
公开(公告)号：US20060019424A1
公开(公告)日：2006-01-26
申请号：US11156794
申请日：2005-06-20
申请人： Fu-Tien Weng , Yu-Kung Hsiao , Hung-Jen Hsu , Yi-Ming Dai , Chin Chen Kuo , Te-Fu Tseng , Chih-Kung Chang , Jack Deng , Chung-Sheng Hsiung , Bii-Junq Chang
发明人： Fu-Tien Weng , Yu-Kung Hsiao , Hung-Jen Hsu , Yi-Ming Dai , Chin Chen Kuo , Te-Fu Tseng , Chih-Kung Chang , Jack Deng , Chung-Sheng Hsiung , Bii-Junq Chang
IPC分类号： H01L21/00
CPC分类号： H01L27/14625 , H01L23/544 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： A method is provided for processing a substrate. The substrate has at least one filter region, a plurality of bond pads, and a plurality of scribe lines arranged around the filter region and bond pads. A first planarization layer is formed above the substrate. The planarization layer has a substantially flat top surface overlying the filter region, the bond pads and the scribe lines. At least one color resist layer is formed over the first planarization layer and within the filter region while the first planarization layer covers the bond pads and the scribe lines.

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