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1. 发明授权

US11978767B2 Power semiconductor device, packaging structure, and electronic device 有权
公开(公告)号：US11978767B2
公开(公告)日：2024-05-07
申请号：US17708268
申请日：2022-03-30
申请人： HUAWEI TECHNOLOGIES CO., LTD.
发明人： Zhaozheng Hou , Yunbin Gao , Yiyu Wang , Fei Hu
IPC分类号： H01L29/06 , H01L23/31 , H01L23/498 , H01L29/16 , H01L29/872
CPC分类号： H01L29/0619 , H01L23/3171 , H01L23/3192 , H01L23/49861 , H01L29/0607 , H01L29/1608 , H01L29/872
摘要： This application provides a power semiconductor device, which includes: a semiconductor substrate, where the semiconductor substrate is doped with a first-type impurity; an epitaxial layer, that is doped with the first-type impurity, the epitaxial layer is disposed on a surface of the semiconductor substrate, a first doped region doped with a second-type impurity is disposed on a first surface that is of the epitaxial layer and that is away from the semiconductor substrate, and a circumferential edge of the first surface of the epitaxial layer has a scribing region; a first metal layer, disposed on one side that is of the epitaxial layer and that is away from the semiconductor substrate, where the first metal layer is electrically connected to the epitaxial layer; a second metal layer, disposed on one side that is of the epitaxial layer and that is away from the semiconductor substrate; and a passivation layer.

2. 发明授权

US09335771B2 Feedforward control method and apparatus 有权
标题翻译：前馈控制方法及装置
公开(公告)号：US09335771B2
公开(公告)日：2016-05-10
申请号：US14330706
申请日：2014-07-14
申请人： Huawei Technologies Co., Ltd.
发明人： Zhaozheng Hou , Chao Jia
IPC分类号： H02M3/157 , G05F1/10 , G05F1/46 , H02M3/335 , H02M1/00
CPC分类号： G05F1/10 , G05F1/46 , H02M3/157 , H02M3/33515 , H02M2001/0022
摘要： A feedforward control method, which includes: determining, whether the input voltage rapidly changes or slowly changes; when the input voltage rapidly changes, determining, a first feedforward gain coefficient corresponding to the difference between a input voltage reference value and a first input voltage measurement value acquired by a high-speed low-precision analog-to-digital converter in a current sampling period; when the input voltage slowly changes, determining a second feedforward gain coefficient which is a ratio of the input voltage reference value to a second input voltage measurement value acquired by a low-speed high-precision analog-to-digital converter in the current sampling period; and using the first or the second feedforward gain coefficient as a feedforward gain coefficient of a current input voltage, multiplying the feedforward gain coefficient by an output value of a feedback loop of an output voltage, so as to control stable output of the output voltage.
摘要翻译：一种前馈控制方法，包括：确定输入电压是快速变化还是缓慢变化; 当输入电压迅速变化时，确定与当前采样中的高速低精度模/数转换器所获得的输入电压参考值和第一输入电压测量值之间的差对应的第一前馈增益系数期; 当输入电压缓慢变化时，确定第二前馈增益系数，该第二前馈增益系数是当前采样周期中由低速高精度模数转换器获取的输入电压基准值与第二输入电压测量值的比值 ; 并且使用第一或第二前馈增益系数作为电流输入电压的前馈增益系数，将前馈增益系数乘以输出电压的反馈回路的输出值，以便控制输出电压的稳定输出。

3. 发明授权

US09787203B2 Power source management method and power source 有权
公开(公告)号：US09787203B2
公开(公告)日：2017-10-10
申请号：US15383614
申请日：2016-12-19
申请人： Huawei Technologies Co., LTD
发明人： Zhaozheng Hou , Xiaodong Fan , Jiebin Cheng , Zhihua Liu , Xuezhen Zhang
IPC分类号： H02M3/335 , H02M1/08 , H02M1/00
CPC分类号： H02M3/33546 , H02M1/08 , H02M3/33584 , H02M3/33592 , H02M3/3376 , H02M2001/0009 , H02M2001/0016 , H02M2001/0025 , Y02B70/1475
摘要： A power source management method and a power source are provided. The method includes: comparing a feedforward control signal with a feedback control signal by using a logic control circuit, outputting the signals after the comparison, and performing matching, to obtain control signals of switching transistors of a full-bridge topology circuit; and adjusting the control signals of the switching transistors of the full-bridge topology circuit by using the logic control circuit, so that operating duty cycles of two bridge arms on a primary side match, are symmetric within one switch period of the logic control circuit, or match for a long time, to prevent transformer biasing. The power source management method and the power source can achieve good feedforward performance, suppress input disturbance, and additionally prevent transformer biasing, which ensures that the power source works normally.

4. 发明授权

US09507359B2 Power supply control method and device 有权
标题翻译：电源控制方法及装置
公开(公告)号：US09507359B2
公开(公告)日：2016-11-29
申请号：US14725060
申请日：2015-05-29
申请人： Huawei Technologies Co., Ltd.
发明人： Zhaozheng Hou
IPC分类号： G05F1/46 , G05F1/625 , G05F5/00
CPC分类号： G05F1/625 , G05F5/00
摘要： A power supply control method and device and relates to the field of electronics, and can alleviate impact of a power supply input disturbance on an output voltage. A specific solution is as follows: sampling an input voltage to generate a sampled input voltage; performing anti-steady-state-disturbance processing on the sampled input voltage to generate a feed-forward input voltage; sampling an output voltage to generate a sampled output voltage; and combining the sampled output voltage and the feed-forward input voltage that is output by a feed-forward digital control circuit into a stability voltage. The present invention is applied to power supply control.
摘要翻译：电源控制方法和装置，涉及电子领域，可以减轻电源输入干扰对输出电压的影响。具体解决方案如下：采样输入电压以产生采样输入电压; 对采样的输入电压进行反稳态干扰处理以产生前馈输入电压; 对输出电压进行采样以产生采样的输出电压; 并将采样输出电压与由前馈数字控制电路输出的前馈输入电压组合成稳定电压。本发明适用于电源控制。

5. 发明授权

US09013340B1 Protection circuit for analog-to-digital converter, digital power supply, digital signal processing method, processing module, and circuit protection method 有权
标题翻译：模数转换器保护电路，数字电源，数字信号处理方式，处理模块和电路保护方法
公开(公告)号：US09013340B1
公开(公告)日：2015-04-21
申请号：US14570505
申请日：2014-12-15
申请人： Huawei Technologies Co., Ltd.
发明人： Zhaozheng Hou , Ying Li
IPC分类号： H03M1/00 , H03M1/18 , H03M1/06 , H03M1/12
CPC分类号： H03M1/183 , H02M1/32 , H02M1/36 , H02M2001/0012 , H03M1/185
摘要： A protection circuit includes: a first gain module, configured to receive a first input signal, scale the first input signal according to a first scaling factor, to obtain a first analog signal, receive a third scaling factor from a processing module, and scale the second input signal according to the third scaling factor, to obtain a second analog signal; an analog-to-digital converter, configured to convert the first analog signal into a first digital signal, and convert the second analog signal into a second digital signal; the processing module, configured to determine, according to a voltage value of the first digital signal and a preset scaling factor determining rule, the third scaling factor and a fourth scaling factor; and a second gain module, configured to scale the first digital signal according to a second scaling factor, and scale the second digital signal according to the fourth scaling factor.
摘要翻译：保护电路包括：第一增益模块，被配置为接收第一输入信号，根据第一缩放因子对第一输入信号进行缩放，以获得第一模拟信号，从处理模块接收第三缩放因子，并对第二输入信号，以获得第二模拟信号; 模拟 - 数字转换器，被配置为将所述第一模拟信号转换为第一数字信号，并将所述第二模拟信号转换为第二数字信号; 所述处理模块被配置为根据所述第一数字信号的电压值和预设缩放因子确定规则确定所述第三缩放因子和第四缩放因子; 以及第二增益模块，被配置为根据第二缩放因子缩放所述第一数字信号，并且根据所述第四缩放因子缩放所述第二数字信号。

6. 发明申请

US20150346751A1 Power Supply Control Method and Device 有权
标题翻译：电源控制方法和装置
公开(公告)号：US20150346751A1
公开(公告)日：2015-12-03
申请号：US14725060
申请日：2015-05-29
申请人： Huawei Technologies Co., Ltd.
发明人： Zhaozheng Hou
IPC分类号： G05F1/625 , G05F5/00
CPC分类号： G05F1/625 , G05F5/00
摘要： A power supply control method and device and relates to the field of electronics, and can alleviate impact of a power supply input disturbance on an output voltage. A specific solution is as follows: sampling an input voltage to generate a sampled input voltage; performing anti-steady-state-disturbance processing on the sampled input voltage to generate a feed-forward input voltage; sampling an output voltage to generate a sampled output voltage; and combining the sampled output voltage and the feed-forward input voltage that is output by a feed-forward digital control circuit into a stability voltage. The present invention is applied to power supply control.
摘要翻译：电源控制方法和装置，涉及电子领域，可以减轻电源输入干扰对输出电压的影响。具体解决方案如下：采样输入电压以产生采样输入电压; 对采样的输入电压进行反稳态干扰处理以产生前馈输入电压; 对输出电压进行采样以产生采样的输出电压; 并将采样输出电压与由前馈数字控制电路输出的前馈输入电压组合成稳定电压。本发明适用于电源控制。

7. 发明申请

US20130078939A1 METHOD FOR CONTROLLING FAST TRACKING POWER SUPPLY, FAST TRACKING POWER SUPPLY, AND SYSTEM 有权
标题翻译：用于控制快速跟踪电源，快速跟踪电源和系统的方法
公开(公告)号：US20130078939A1
公开(公告)日：2013-03-28
申请号：US13686676
申请日：2012-11-27
申请人： Huawei Technologies Co., Ltd.
发明人： Zhaozheng Hou
IPC分类号： H04B1/16 , G05F1/10
CPC分类号： H04B1/1607 , G05F1/10 , H03F1/0227 , H03F1/025 , H03F3/19 , H03F3/245 , H03F2200/102 , H03F2200/432 , H03F2200/507 , H03F2200/511
摘要： A fast tracking power supply includes a combined controllable voltage source to control a load voltage. The combined controllable voltage source is connected to a tracking current source in parallel to provide a current for a load. The tracking current source is responsible for providing a low-frequency high current for the load to implement high-efficiency low-frequency tracking of the load current and reducing an output current of the combined controllable voltage source as much as possible. Meanwhile, a power supply voltage switching unit in the combined controllable voltage source adjusts a power supply voltage range of a linear amplifier in the combined controllable voltage source, so as to reduce the power supply voltage range of the linear amplifier, thereby reducing power consumption of the combined controllable voltage source.
摘要翻译：快速跟踪电源包括用于控制负载电压的组合的可控电压源。组合的可控电压源并联连接到跟踪电流源，为负载提供电流。跟踪电流源负责为负载提供低频高电流，以实现负载电流的高效低频跟踪，并尽可能减少组合可控电压源的输出电流。同时，组合的可控电压源中的电源电压切换单元调节组合的可控电压源中的线性放大器的电源电压范围，以减少线性放大器的电源电压范围，由此降低功率消耗组合的可控电压源。

8. 发明申请

US20220344485A1 Gallium Nitride Device, Switching Power Transistor, Drive Circuit, and Gallium Nitride Device Production Method 有权
公开(公告)号：US20220344485A1
公开(公告)日：2022-10-27
申请号：US17727221
申请日：2022-04-22
申请人： Huawei Technologies Co., Ltd.
发明人： Qilong Bao , Qimeng Jiang , Gaofei Tang , Hanxing Wang , Boning Huang , Zhaozheng Hou
IPC分类号： H01L29/45 , H03K17/041 , H01L29/778 , H01L29/66 , H01L29/40 , H01L29/417
摘要： A gallium nitride (GaN) device, where a drain of the GaN device includes a p-type (P-GaN) layer and a drain metal. The drain metal includes a plurality of first structural intervals and a plurality of second structural intervals. The plurality of first structural intervals and the plurality of second structural intervals are alternately distributed in the gate width direction. In this way, the drain metal implements local injection of holes for the device in the first structural intervals, and forms ohmic contact in the second structural intervals, implementing current conduction from a drain to a source of the device.

9. 发明授权

US11133128B2 System in package module assembly, system in package module, and electronic device 有权
公开(公告)号：US11133128B2
公开(公告)日：2021-09-28
申请号：US16022055
申请日：2018-06-28
申请人： Huawei Technologies Co., Ltd.
发明人： Yuping Gong , Zhaozheng Hou , Junhe Wang
IPC分类号： H01F27/24 , H01L23/50 , H01F27/02 , H01F17/04 , H01L25/00 , H01F3/14 , H01F27/30 , H01L23/492 , H01L23/498
摘要： A system in package module assembly is provided, and includes: a substrate, and a chip, an inductor, and an electrical element that are electrically connected to the substrate. The substrate includes a first surface, a second surface opposite to the first surface, and an accommodation groove. The accommodation groove passes through the second surface and the first surface. The inductor includes a magnetic core and an inductive coil. The magnetic core includes a base and a protrusion disposed on an outer surface of the base. The outer surface on which the protrusion is disposed and that is of the base abuts on the second surface. The protrusion is accommodated in the accommodation groove. The inductive coil is disposed in the protrusion. A system in package module and an electronic device are further provided.

10. 发明授权

US11705494B2 Gallium nitride component and drive circuit thereof 有权
公开(公告)号：US11705494B2
公开(公告)日：2023-07-18
申请号：US17695539
申请日：2022-03-15
申请人： Huawei Technologies Co., Ltd.
发明人： Boning Huang , Zhaozheng Hou , Qimeng Jiang
IPC分类号： H01L29/00 , H01L29/423 , H01L29/20 , H01L29/205 , H01L29/47 , H01L29/778 , H03K17/284
CPC分类号： H01L29/42316 , H01L29/2003 , H01L29/205 , H01L29/475 , H01L29/7786 , H03K17/284
摘要： This application provides a gallium nitride component and a drive circuit thereof. The gallium nitride component includes: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer. The gate includes a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer. A Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer. In the technical solution provided in this application, the gallium nitride component is a normally-off component, and is conducive to design of a drive circuit.

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