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1. 发明申请

US20230087724A1 IGBT CHIP INTEGRATING TEMPERATURE SENSOR 有权
公开(公告)号：US20230087724A1
公开(公告)日：2023-03-23
申请号：US17994053
申请日：2022-11-25
申请人： HUAWEI TECHNOLOGIES CO., LTD.
发明人： Boning Huang , Wentao Yang , Junhe Wang
IPC分类号： H01L23/34 , H01L29/739 , H01L27/06 , H01L23/552 , H01L29/417 , H01L29/423 , H01L23/522 , H01L23/528 , H01L29/06
摘要： The technology of this disclosure relates to an IGBT chip integrating a temperature sensor, and relates to the field of power device technologies, to improve accuracy of temperature monitoring of the IGBT chip. The IGBT chip integrating the temperature sensor includes a cell region, an emitter pad, a gate pad, a gate finger structure, a temperature sensing module, and a conductive shielding structure. The emitter pad is electrically connected to emitters of a plurality of IGBT cells. The gate finger structure is connected between the gate pad and gates of the plurality of IGBT cells. The temperature sensing module includes a temperature sensor, an anode pad, a cathode pad, and a metal lead. The temperature sensor and at least a part of the metal lead are located in the gate finger structure and are insulated from the gate finger structure.

2. 发明授权

US11757362B2 Power supply circuit and power supply control method 有权
公开(公告)号：US11757362B2
公开(公告)日：2023-09-12
申请号：US17451986
申请日：2021-10-22
申请人： Huawei Technologies Co., Ltd.
发明人： Peng Zou , Boning Huang , Jianquan Wu
IPC分类号： H02M3/158
CPC分类号： H02M3/1582 , H02M3/1584
摘要： The invention disclose a power supply circuit. The power supply circuit includes one or a plurality of first-stage voltage conversion circuits and one or a plurality of second-stage voltage conversion circuits; an input end of the first-stage voltage conversion circuit is coupled to a power supply; the first-stage voltage conversion circuit is configured to convert a first voltage received at the input end into a second voltage, where the second voltage is less than the first voltage; an input end of the second-stage voltage conversion circuit is coupled to an output end of the first-stage voltage conversion circuit; the second-stage voltage conversion circuit is configured to convert the second voltage into a third voltage, and supply the third voltage to a load.

3. 发明公开

US20230238426A1 Terminal Structure of Power Device and Manufacturing Method Thereof, and Power Device 审中-公开
公开(公告)号：US20230238426A1
公开(公告)日：2023-07-27
申请号：US18192070
申请日：2023-03-29
申请人： Huawei Technologies Co., Ltd.
发明人： Wentao Yang , Boning Huang , Qian Zhao
IPC分类号： H01L29/06 , H01L29/40
CPC分类号： H01L29/0623 , H01L29/404 , H01L29/1095
摘要： A terminal structure of a power device includes a substrate and a plurality of field limiting rings disposed on a first surface of the substrate. The substrate includes a drift layer and a doped layer. The doped layer is formed through diffusion inward from the first surface of the substrate. The doped layer and the drift layer are a first conductivity type, and an impurity concentration of the doped layer is greater than an impurity concentration of the drift layer. The field limiting rings are a second conductivity type. In the terminal structure, lateral diffusion of impurities in the field limiting rings is limited through a design of the doped layer.

4. 发明申请

US20230009542A1 Composite Substrate and Preparation Method Thereof, Semiconductor Device, and Electronic Device 有权
公开(公告)号：US20230009542A1
公开(公告)日：2023-01-12
申请号：US17810721
申请日：2022-07-05
申请人： Huawei Technologies Co., Ltd.
发明人： Bo Gao , Boning Huang , Yuxi Wan
IPC分类号： H01L29/16 , H01L29/20 , H01L29/04
摘要： Embodiments of this application relate to the field of semiconductor technologies, and provide a composite substrate and a preparation method thereof, a semiconductor device, and an electronic device. The composite substrate includes a bearer layer, a silicon carbide layer, and at least one epitaxial layer. The silicon carbide layer is disposed on the bearer layer and bonded to the bearer layer, and a material of the silicon carbide layer includes monocrystal silicon carbide. The at least one epitaxial layer is disposed on a side that is of the silicon carbide layer and that is away from the bearer layer.

5. 发明授权

US11322936B2 Distributed battery, battery control method, and electric vehicle 有权
公开(公告)号：US11322936B2
公开(公告)日：2022-05-03
申请号：US16672064
申请日：2019-11-01
申请人： Huawei Technologies Co., Ltd.
发明人： Kui Zhou , Boning Huang , Wenping Tong
IPC分类号： B60L58/20 , B60L50/64 , B60L58/16 , H02J7/00 , H01M10/44 , H01M10/42 , H02J1/10 , H02M3/158
摘要： Disclosed herein is a distributed battery pack power supply system, a charging control method, and a discharging control method, where a plurality of battery packs or battery groups is directly coupled in parallel or indirectly coupled in parallel as required using a charging/discharging circuit of the distributed battery pack power supply system and a corresponding control policy. A distributed battery includes a plurality of battery packs, and further includes a controller, a bidirectional voltage transformation circuit, a bypass circuit, a charging circuit, and a charging input end. Each battery pack corresponds to one bypass circuit and one bidirectional voltage transformation circuit.

6. 发明授权

US11705494B2 Gallium nitride component and drive circuit thereof 有权
公开(公告)号：US11705494B2
公开(公告)日：2023-07-18
申请号：US17695539
申请日：2022-03-15
申请人： Huawei Technologies Co., Ltd.
发明人： Boning Huang , Zhaozheng Hou , Qimeng Jiang
IPC分类号： H01L29/00 , H01L29/423 , H01L29/20 , H01L29/205 , H01L29/47 , H01L29/778 , H03K17/284
CPC分类号： H01L29/42316 , H01L29/2003 , H01L29/205 , H01L29/475 , H01L29/7786 , H03K17/284
摘要： This application provides a gallium nitride component and a drive circuit thereof. The gallium nitride component includes: a substrate; a gallium nitride (GaN) buffer layer formed on the substrate; an aluminum gallium nitride (AlGaN) barrier layer formed on the GaN buffer layer; and a source, a drain, and a gate formed on the AlGaN barrier layer. The gate includes a P-doped gallium nitride (P—GaN) cap layer formed on the AlGaN barrier layer, and a first gate metal and a second gate metal formed on the P—GaN cap layer. A Schottky contact is formed between the first gate metal and the P—GaN cap layer, and an ohmic contact is formed between the second gate metal and the P—GaN cap layer. In the technical solution provided in this application, the gallium nitride component is a normally-off component, and is conducive to design of a drive circuit.

7. 发明授权

US11689106B2 Power supply circuit and power supply control method 有权
公开(公告)号：US11689106B2
公开(公告)日：2023-06-27
申请号：US17451986
申请日：2021-10-22
申请人： Huawei Technologies Co., Ltd.
发明人： Peng Zou , Boning Huang , Jianquan Wu
IPC分类号： H02M3/158
CPC分类号： H02M3/1582 , H02M3/1584
摘要： The invention disclose a power supply circuit. The power supply circuit includes one or a plurality of first-stage voltage conversion circuits and one or a plurality of second-stage voltage conversion circuits; an input end of the first-stage voltage conversion circuit is coupled to a power supply; the first-stage voltage conversion circuit is configured to convert a first voltage received at the input end into a second voltage, where the second voltage is less than the first voltage; an input end of the second-stage voltage conversion circuit is coupled to an output end of the first-stage voltage conversion circuit; the second-stage voltage conversion circuit is configured to convert the second voltage into a third voltage, and supply the third voltage to a load.

8. 发明授权

US10978957B2 Resonant converter circuit and resonant converter circuit control method 有权
公开(公告)号：US10978957B2
公开(公告)日：2021-04-13
申请号：US16904735
申请日：2020-06-18
申请人： HUAWEI TECHNOLOGIES CO., LTD.
发明人： Yanzhong Zhang , Zheng Ma , Boning Huang , Grover Victor Torrico-Bascopé , Dianbo Fu
IPC分类号： H02M3/335 , H02M3/337 , H02M1/08 , H02M7/483 , H02M1/00
摘要： A resonant converter circuit comprises a multi-level inverter circuit placed before a resonant unit, and the multi-level inverter circuit can reduce a voltage to be input to the resonant unit. The reduced input voltage of the resonant unit results in a drop in an output voltage of the entire resonant converter circuit. In this process, the final output voltage is adjusted by adjusting the input voltage of the resonant unit, with no need to substantially adjust a switching frequency of the resonant converter circuit.

9. 发明申请

US20200062140A1 Distributed Battery, Battery Control Method, and Electric Vehicle 审中-公开
公开(公告)号：US20200062140A1
公开(公告)日：2020-02-27
申请号：US16672064
申请日：2019-11-01
申请人： Huawei Technologies Co., Ltd.
发明人： Kui Zhou , Boning Huang , Wenping Tong
IPC分类号： B60L58/20 , B60L50/64 , B60L58/16 , H02J7/00 , H01M10/44 , H01M10/42
摘要： A distributed battery pack power supply system, a charging control method, and a discharging control method, where a plurality of battery packs or battery groups is directly coupled in parallel or indirectly coupled in parallel as required using a charging/discharging circuit of the distributed battery pack power supply system and a corresponding control policy. A distributed battery includes a plurality of battery packs, and further includes a controller, a bidirectional voltage transformation circuit, a bypass circuit, a charging circuit, and a charging input end. Each battery pack corresponds to one bypass circuit and one bidirectional voltage transformation circuit.

10. 发明申请

US20160218558A1 Power Supply Bus Circuit 审中-公开
标题翻译：电源总线电路
公开(公告)号：US20160218558A1
公开(公告)日：2016-07-28
申请号：US15090724
申请日：2016-04-05
申请人： Huawei Technologies Co., Ltd.
发明人： Zhen Qin , Fanglin Li , Boning Huang
IPC分类号： H02J9/06 , H02J7/00
CPC分类号： H02J9/061 , H02J7/0068 , Y02B10/72
摘要： A power supply bus circuit includes a high-voltage power supply circuit, the high-voltage power supply circuit includes at least two first alternating current/direct current converters and further includes at least two high-voltage direct current power supply buses, and the first alternating current/direct current converter connects to mains, adjusts the connected mains into a high-voltage direct current, and outputs the high-voltage direct current to the high-voltage direct current power supply bus that is electrically connected to the first alternating current/direct current converter, where the high-voltage power supply circuit further includes at least one first direct current/direct current converter, where the first direct current/direct current converter performs voltage conversion on the high-voltage direct current between two high-voltage direct current power supply buses connected to the first direct current/direct current converter.
摘要翻译：电源总线电路包括高压电源电路，所述高压电源电路包括至少两个第一交流/直流电转换器，并且还包括至少两个高压直流电源总线，并且所述第一交流/直流电转换器连接到电源，将所连接的电源调整为高压直流电，并将高压直流电输出到与第一交流/直流电连接的高压直流电源总线，直流电转换器，其中高压电源电路还包括至少一个第一直流/直流转换器，其中第一直流/直流电转换器对两个高电压直接的高压直流电压进行电压转换当前电源总线连接到第一直流/直流转换器。

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