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1. 发明授权

US08450767B2 Light-emitting device 有权
公开(公告)号：US08450767B2
公开(公告)日：2013-05-28
申请号：US13005075
申请日：2011-01-12
申请人： Huang-Chien Fu , Shih-I Chen , Yi Ming Chen , Tzu Chieh Hsu , Jhih-Sian Wang
发明人： Huang-Chien Fu , Shih-I Chen , Yi Ming Chen , Tzu Chieh Hsu , Jhih-Sian Wang
IPC分类号： H01L33/10 , H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L33/42
摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.

2. 发明申请

US20110101404A1 LIGHT-EMITTING DEVICE 有权
标题翻译：发光装置
公开(公告)号：US20110101404A1
公开(公告)日：2011-05-05
申请号：US13005075
申请日：2011-01-12
申请人： Huang Chien Fu , Shih-I Chen , Yi Ming Chen , Tzu Chieh Hsu , Jhih-Sian Wang
发明人： Huang Chien Fu , Shih-I Chen , Yi Ming Chen , Tzu Chieh Hsu , Jhih-Sian Wang
IPC分类号： H01L33/10 , H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/38 , H01L33/405 , H01L33/42
摘要： This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.
摘要翻译：本公开公开了一种发光装置。发光装置包括：基板; 以及包括在所述基板上彼此电连接的多个发光二极管的第一发光单元。第一发光单元中的第一发光二极管包括具有第一导电类型的第一半导体层，具有第二导电类型的第二半导体层和形成在第一和第二半导体层之间的发光叠层。第一发光单元中的第一发光二极管还包括在第一半导体层上的第一连接层，用于电连接到第一发光单元中的第二发光二极管; 与所述第一连接层分离的形成在所述第一半导体层上的第二连接层; 以及在第二半导体层上的第三连接层，用于电连接到第一发光单元中的第三发光二极管。

3. 发明申请

US20110121291A1 LIGHT-EMITTING ELEMENT AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US20110121291A1
公开(公告)日：2011-05-26
申请号：US13022098
申请日：2011-02-07
申请人： Shih-I Chen , Chia-Liang Hsu , Chiu-Lin Yao , Tzu-Chieh Hsu , Chien-Fu Huang
发明人： Shih-I Chen , Chia-Liang Hsu , Chiu-Lin Yao , Tzu-Chieh Hsu , Chien-Fu Huang
IPC分类号： H01L33/10
CPC分类号： H01L33/46 , H01L33/0079 , H01L33/145 , H01L33/22 , H01L33/38
摘要： A light-emitting element includes a light-emitting stack for emitting light and a substrate structure including: a first substrate disposed under the light-emitting stack and having a first surface facing the light-emitting stack; and a second substrate disposed under the light-emitting stack and having a second surface facing the light-emitting stack; and a reflective layer formed between the first substrate and the second substrate and having an inclined angle not perpendicular to the first surface.
摘要翻译：发光元件包括用于发光的发光叠层和基板结构，包括：第一基板，设置在所述发光堆叠下方，并具有面向所述发光叠层的第一表面; 以及第二基板，其设置在所述发光堆叠下方并且具有面向所述发光叠层的第二表面; 以及形成在第一基板和第二基板之间并具有不垂直于第一表面的倾斜角度的反射层。

4. 发明申请

US20120256164A1 OPTOELECTRONIC DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：光电器件及其制造方法
公开(公告)号：US20120256164A1
公开(公告)日：2012-10-11
申请号：US13528059
申请日：2012-06-20
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
IPC分类号： H01L33/06
CPC分类号： H01L33/46 , H01L33/22 , H01L33/42 , H01L33/44
摘要： An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.
摘要翻译：光电器件具有衬底和衬底上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度。第二窗口层具有第二薄层电阻，第二厚度和第二杂质浓度。半导体系统在第一窗口层和第二窗口层之间。第二窗口层具有与半导体系统不同的半导体材料，第二薄层电阻大于第一薄层电阻。提供一种制造方法，其具有以下步骤：提供衬底，在衬底上形成半导体系统，并在半导体系统上形成窗口层。窗口层具有与半导体系统不同的半导体材料。选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。

5. 发明授权

US08207550B2 Optoelectronic device and the manufacturing method thereof 有权
标题翻译：光电子器件及其制造方法
公开(公告)号：US08207550B2
公开(公告)日：2012-06-26
申请号：US13021307
申请日：2011-02-04
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
IPC分类号： H01L33/58 , H01L33/60
CPC分类号： H01L33/46 , H01L33/22 , H01L33/42 , H01L33/44
摘要： One aspect of the present disclosure provides an optoelectronic device comprising a substrate; a first window layer on the substrate, having a first sheet resistance, a first thickness, and a first impurity concentration; a second window layer having a second sheet resistance, a second thickness, and a second impurity concentration; and a semiconductor system between the first window layer and the second window layer; wherein the second window layer comprises a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance.One aspect of the present disclosure provides a method for manufacturing an optoelectronic device in accordance with the present disclosure. The method comprises the steps of providing a substrate; forming a semiconductor system on the substrate; forming a window layer on the semiconductor system, wherein the window layer comprises a semiconductor material different from the semiconductor system; selectively removing the window layer thereby forming a width difference between the window layer and the semiconductor system, and the width difference is greater than 1 micron.
摘要翻译：本公开的一个方面提供了一种包括衬底的光电器件; 在所述基板上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度; 具有第二薄层电阻，第二厚度和第二杂质浓度的第二窗口层; 以及在所述第一窗口层和所述第二窗口层之间的半导体系统; 其中所述第二窗口层包括不同于所述半导体系统的半导体材料，并且所述第二薄层电阻大于所述第一薄层电阻。本公开的一个方面提供了根据本公开的用于制造光电子器件的方法。该方法包括提供基板的步骤; 在所述基板上形成半导体系统; 在所述半导体系统上形成窗口层，其中所述窗口层包括不同于所述半导体系统的半导体材料; 选择性地去除窗口层，从而形成窗口层和半导体系统之间的宽度差，并且宽度差异大于1微米。

6. 发明授权

US09012948B2 Light-emitting element having a plurality of contact parts 有权
标题翻译：具有多个接触部的发光元件
公开(公告)号：US09012948B2
公开(公告)日：2015-04-21
申请号：US13175698
申请日：2011-07-01
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
IPC分类号： H01L33/46 , H01L33/08 , H01L33/42 , H01L33/32 , H01L33/38 , H01L33/40
CPC分类号： H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.
摘要翻译：发光元件包括支撑基板; 形成在所述支撑基板上的反射层; 形成在反射层上的透明层; 形成在透明层上的发光层叠层; 形成在所述透明层和所述反射层之间的蚀刻停止层; 以及形成在发光层叠层和透明层之间的多个接触部。

7. 发明授权

US08765504B2 Semiconductor device structures and the separating methods thereof 有权
标题翻译：半导体器件结构及其分离方法
公开(公告)号：US08765504B2
公开(公告)日：2014-07-01
申请号：US13490992
申请日：2012-06-07
申请人： Shih-I Chen , Ching-Pei Lin , Tzu-Chieh Hsu , Chia-Liang Hsu
发明人： Shih-I Chen , Ching-Pei Lin , Tzu-Chieh Hsu , Chia-Liang Hsu
IPC分类号： H01L21/00 , H01L29/18 , H01L33/00 , H01L29/205
CPC分类号： H01L33/0095 , H01L21/78 , H01L2224/16225 , H01L2924/181 , H01L2924/00012
摘要： A method of separating semiconductor device structures comprises steps of providing a substrate having a first surface and a second surface opposite to the first surface; forming a plurality of semiconductor epitaxial stacks on the first surface; forming a patterned resist layer covering the semiconductor epitaxial stacks and exposing part of the first surface, or covering the second surface corresponding to the semiconductor epitaxial stacks; performing a physical etching process to directly server the substrate apart from an area of the first surface or the second surface not covered by the patterned resist layer; and separating the semiconductor epitaxial stacks to form a plurality of semiconductor device structures.
摘要翻译：分离半导体器件结构的方法包括提供具有第一表面和与第一表面相对的第二表面的衬底的步骤; 在所述第一表面上形成多个半导体外延堆叠; 形成覆盖所述半导体外延叠层并暴露所述第一表面的一部分或覆盖对应于所述半导体外延叠层的所述第二表面的图案化抗蚀剂层; 进行物理蚀刻处理以直接地将所述基板服务于所述第一表面或未被所述图案化抗蚀剂层覆盖的第二表面的区域; 以及分离半导体外延叠层以形成多个半导体器件结构。

8. 发明授权

US08474233B2 Optoelectronic device and the manufacturing method thereof 有权
标题翻译：光电子器件及其制造方法
公开(公告)号：US08474233B2
公开(公告)日：2013-07-02
申请号：US13528059
申请日：2012-06-20
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Chun-Yi Wu , Chien-Fu Huang
IPC分类号： H01L33/06
CPC分类号： H01L33/46 , H01L33/22 , H01L33/42 , H01L33/44
摘要： An optoelectronic device has a substrate and a first window layer on the substrate with a first sheet resistance, a first thickness, and a first impurity concentration. A second window layer has a second sheet resistance, a second thickness, and a second impurity concentration. A semiconductor system is between the first window layer and the second window layer. The second window layer has a semiconductor material different from the semiconductor system, and the second sheet resistance is greater than the first sheet resistance. A method for manufacturing is provided, having the steps of providing a substrate, forming a semiconductor system on the substrate, and forming a window layer on the semiconductor system. The window layer has a semiconductor material different from the semiconductor system. Selectively removing the window layer forms a width difference greater than 1 micron between the window layer and semiconductor system.
摘要翻译：光电器件具有衬底和衬底上的第一窗口层，具有第一薄层电阻，第一厚度和第一杂质浓度。第二窗口层具有第二薄层电阻，第二厚度和第二杂质浓度。半导体系统在第一窗口层和第二窗口层之间。第二窗口层具有与半导体系统不同的半导体材料，第二薄层电阻大于第一薄层电阻。提供一种制造方法，其具有以下步骤：提供衬底，在衬底上形成半导体系统，并在半导体系统上形成窗口层。窗口层具有与半导体系统不同的半导体材料。选择性地去除窗口层在窗口层和半导体系统之间形成大于1微米的宽度差。

9. 发明申请

US20120080697A1 LIGHT-EMITTING ELEMENT HAVING A PLURALITY OF CONTACT PARTS 有权
标题翻译：具有多个接触部件的发光元件
公开(公告)号：US20120080697A1
公开(公告)日：2012-04-05
申请号：US13175698
申请日：2011-07-01
申请人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
发明人： Shih-I Chen , Chia-Liang Hsu , Tzu-Chieh Hsu , Han-Min Wu , Ye-Ming Hsu , Chien-Fu Huang , Chao-Hsing Chen , Chiu-Lin Yao , Hsin-Mao Liu , Chien-Kai Chun
IPC分类号： H01L33/46 , H01L33/08
CPC分类号： H01L33/62 , H01L25/0753 , H01L27/15 , H01L33/08 , H01L33/10 , H01L33/145 , H01L33/32 , H01L33/382 , H01L33/385 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/60 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element includes a supportive substrate; a reflective layer formed on the supportive substrate; a transparent layer formed on the reflective layer; a light-emitting stacked layer formed on the transparent layer; an etching-stop layer formed between the transparent layer and the reflective layer; and a plurality of contact parts formed between the light-emitting stacked layer and the transparent layer.
摘要翻译：发光元件包括支撑基板; 形成在所述支撑基板上的反射层; 形成在反射层上的透明层; 形成在透明层上的发光层叠层; 形成在所述透明层和所述反射层之间的蚀刻停止层; 以及形成在发光层叠层和透明层之间的多个接触部。

10. 发明申请

US20110241057A1 HIGH-EFFICIENCY LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：高效发光装置及其制造方法
公开(公告)号：US20110241057A1
公开(公告)日：2011-10-06
申请号：US13161835
申请日：2011-06-16
申请人： Chien-Fu SHEN , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
发明人： Chien-Fu SHEN , Chao-Hsing Chen , Chien-Fu Huang , Shih-I Chen , Chiu-Lin Yao , Chia-Liang Hsu , Chen Ou
IPC分类号： H01L33/58 , H01L33/00
CPC分类号： H01L33/10 , H01L33/22
摘要： A light-emitting device includes a substrate; a first semiconductor layer formed on the substrate; an active layer formed on the first semiconductor layer; a second semiconductor layer formed on the active layer; and a first pad formed on the second semiconductor layer, wherein the second semiconductor layer includes a plurality of voids between the active layer and the first pad.
摘要翻译：发光装置包括：基板; 形成在所述基板上的第一半导体层; 形成在所述第一半导体层上的有源层; 形成在所述有源层上的第二半导体层; 以及形成在所述第二半导体层上的第一焊盘，其中所述第二半导体层在所述有源层和所述第一焊盘之间包括多个空隙。

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