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    • 3. 发明授权
    • IMD scheme by post-plasma treatment of FSG and TEOS oxide capping layer
    • 通过后处理FSG和TEOS氧化物覆盖层的IMD方案
    • US06284644B1
    • 2001-09-04
    • US09684518
    • 2000-10-10
    • Arthur Khoon Siah AugFeng ChenQiong Li
    • Arthur Khoon Siah AugFeng ChenQiong Li
    • H01L214763
    • H01L21/76829G01V3/15H01L21/76801H01L21/76814H01L21/76826H01L21/76831
    • A method of forming a metal interconnect within a fluorinated silica glass dielectric layer while preventing outgassing from the FSG dielectric layer, comprising the following steps. A semiconductor structure having a metal structure, with an overlying liner layer, formed thereover is provided. A FSG dielectric layer is formed over the liner layer. The FSG dielectric layer having an exposed upper surface. The FSG dielectric layer is treated with a first nitrogen gas/plasma treatment to form a fluorine depleted upper capping layer from the exposed surface of the FSG dielectric layer. A TEOS oxide layer is formed over the upper capping layer. The TEOS oxide layer is planarized to form a planarized TEOS oxide layer. The planarized TEOS oxide layer, the upper capping layer, the treated FSG dielectric layer, and the liner layer are patterned to form a via hole therethrough, exposing a portion of the metal structure and exposing sidewalls of the patterned treated FSG dielectric layer within the via opening. At least the exposed sidewalls of the patterned treated fluorinated silicon glass dielectric layer within the via opening is treated with a second nitrogen gas/plasma treatment to form a fluorine depleted sidewall capping layer from the exposed sidewalls of the patterned treated fluorinated silicon glass dielectric layer, wherein the upper and sidewall capping layers prevent the outgassing from the patterned FSG dielectric layer. A metal interconnect is formed within the via opening.
    • 一种在氟化石英玻璃介电层内形成金属互连的方法,同时防止从FSG介电层脱气,包括以下步骤。 提供具有金属结构的半导体结构,其上形成有覆盖衬垫层。 FSG电介质层形成在衬层上。 FSG电介质层具有暴露的上表面。 用第一氮气/等离子体处理处理FSG电介质层,以从FSG电介质层的暴露表面形成耗尽氟的上覆盖层。 在上盖层上形成TEOS氧化物层。 将TEOS氧化物层平坦化以形成平坦化的TEOS氧化物层。 对平坦化的TEOS氧化物层,上覆盖层,经处理的FSG电介质层和衬里层进行图案化以形成穿过其中的通孔,暴露金属结构的一部分并暴露图案化处理的FSG介电层的侧壁在通孔内 开放 通过第二氮气/等离子体处理处理至少通孔开口内图案化处理的氟化硅玻璃介电层的暴露的侧壁,以从图案化处理的氟化硅玻璃介电层的暴露的侧壁形成氟耗尽的侧壁封盖层, 其中上侧壁封盖层和侧壁封盖层防止从图案化的FSG电介质层脱气。 在通孔开口内形成金属互连。
    • 6. 发明申请
    • Multi-track hinting for receiver-driven streaming system
    • 接收机驱动流系统的多轨提示
    • US20060251167A1
    • 2006-11-09
    • US10539698
    • 2003-12-16
    • Mihaela Van Der SchaarQiong Li
    • Mihaela Van Der SchaarQiong Li
    • H04N7/12
    • H04L65/4084H04L29/06H04L29/06027H04L65/80H04N21/23439H04N21/44029H04N21/44209H04N21/4621H04N21/6125H04N21/6581
    • A receiver-driven streaming method is provided. The method includes receiving an original coded video stream from a transmitter 102 at a receiver 104. An available bit rate is measured at the receiver 104. A request for a different coded video stream and a switching stream is sent from the receiver 104 to the transmitter 102 based on the available bit rate. The requested switching stream is received from the transmitter 102 at the receiver 104. The requested coded video stream is received from the transmitter 102 at the receiver 104. According to one embodiment, switching streams 132a-132f are stored separately from coded video streams 130a-130c, and each switching stream 132a-132f and coded video stream 130a-130c is stored in a separate track from each other. In this way, switching streams 132a-132f maybe generated offline. Also, the receiver 104 controls the streams provided by the transmitter 102 by requesting specific switching streams 132a-132f and coded video streams 130a-103c.
    • 提供了一种接收机驱动的流传输方法。 该方法包括在接收机104处从发射机102接收原始编码视频流。在接收机104处测量可用比特率。对于不同编码视频流和切换流的请求从接收机104发送到发射机 102基于可用比特率。 所请求的切换流在接收机104处从发射机102接收。所请求的编码视频流在接收机104处从发射机102接收。根据一个实施例,切换流132a-132f与编码视频流 130a-130c,并且每个切换流132a-132f和编码视频流130a-130c彼此存储在单独的轨道中。 以这种方式,切换流132a-132f可以离线生成。 而且,接收机104通过请求特定的切换流132a-132f和编码的视频流130a-103c来控制由发射机102提供的流。