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1. 发明授权

US5502315A Electrically programmable interconnect structure having a PECVD amorphous silicon element 失效
标题翻译：具有PECVD非晶硅元件的电可编程互连结构
公开(公告)号：US5502315A
公开(公告)日：1996-03-26
申请号：US161504
申请日：1993-12-02
申请人： Hua-Thye Chua , Andrew K. Chan , John M. Birkner , Ralph G. Whitten , Richard L. Bechtel , Mammen Thomas
发明人： Hua-Thye Chua , Andrew K. Chan , John M. Birkner , Ralph G. Whitten , Richard L. Bechtel , Mammen Thomas
IPC分类号： H01L23/525 , H02L27/02
CPC分类号： H01L23/5252 , H01L2924/0002
摘要： In one method for forming amorphous silicon antifuses with significantly reduced leakage current, a film of amorphous silicon is formed in a antifuse via between two electrodes. The amorphous silicon film is deposited using plasma enhanced chemical vapor deposition, preferably in an silane-argon environment and at a temperature between 200 and 500 degrees C., or reactively sputtered in a variety of reactive gases. In another method, an oxide layer is placed between two amorphous silicon film layers. In yet another method, one of the amorphous silicon film layers about the oxide layer is doped. In another embodiment, a layer of conductive, highly diffusible material is formed either on or under the amorphous silicon film. The feature size and thickness of the amorphous silicon film are selected to minimize further the leakage current while providing the desired programming voltage. A method also is described for for forming a field programmable gate array with antifuses.
摘要翻译：在形成具有显着降低的漏电流的非晶硅反熔丝的一种方法中，在两个电极之间的反熔丝通孔中形成非晶硅膜。非晶硅膜使用等离子体增强化学气相沉积，优选在硅烷 - 氩气环境中并在200-500℃的温度下沉积，或者以各种反应性气体反应溅射。在另一种方法中，将氧化物层放置在两个非晶硅膜层之间。在另一种方法中，围绕氧化物层的非晶硅膜之一被掺杂。在另一个实施例中，在非晶硅膜上或下形成导电的，高度可扩散的材料层。选择非晶硅膜的特征尺寸和厚度，以在提供期望的编程电压的同时进一步最小化漏电流。还描述了用于形成具有反熔丝的现场可编程门阵列的方法。

2. 发明授权

US5989943A Method for fabrication of programmable interconnect structure 失效
公开(公告)号：US5989943A
公开(公告)日：1999-11-23
申请号：US447969
申请日：1989-12-08
申请人： Ralph G. Whitten , Richard L. Bechtel , Mammen Thomas , Hua-Thye Chua , Andrew K. Chan , John M. Birkner
发明人： Ralph G. Whitten , Richard L. Bechtel , Mammen Thomas , Hua-Thye Chua , Andrew K. Chan , John M. Birkner
IPC分类号： H01L21/82 , H01L23/525 , H01L27/10 , H01L21/28
CPC分类号： H01L23/5252 , H01L2924/0002
摘要： In one method for forming amorphous silicon antifuses with significantly reduced leakage current, a film of amorphous silicon is formed in a antifuse via between two electrodes. The amorphous silicon film is deposited using plasma enhanced chemical vapor deposition, preferably in an silane-argon environment and at a temperature between 200 and 500 degrees C., or reactively sputtered in a variety of reactive gases. In another method, an oxide layer is placed between two amorphous silicon film layers. In yet another method, one of the amorphous silicon film layers about the oxide layer is doped. In another embodiment, a layer of conductive, highly diffusible material is formed either on or under the amorphous silicon film. The feature size and thickness of the amorphous silicon film are selected to minimize further the leakage current while providing the desired programming voltage. A method also is described for for forming a field programmable gate array with antifuses.

3. 发明授权

US6150199A Method for fabrication of programmable interconnect structure 有权
标题翻译：可编程互连结构的制造方法
公开(公告)号：US6150199A
公开(公告)日：2000-11-21
申请号：US405979
申请日：1999-09-27
申请人： Ralph G. Whitten , Richard L. Bechtel , Mammen Thomas , Hua-Thye Chua , Andrew K. Chan , John M. Birkner
发明人： Ralph G. Whitten , Richard L. Bechtel , Mammen Thomas , Hua-Thye Chua , Andrew K. Chan , John M. Birkner
IPC分类号： H01L21/82 , H01L23/525 , H01L27/10
CPC分类号： H01L23/5252 , H01L2924/0002
摘要： In one method for forming amorphous silicon antifuses with significantly reduced leakage current, a film of amorphous silicon is formed in a antifuse via between two electrodes. The amorphous silicon film is deposited using plasma enhanced chemical vapor deposition, preferably in an silane-argon environment and at a temperature between 200 and 500 degrees C., or reactively sputtered in a variety of reactive gases. In another method, an oxide layer is placed between two amorphous silicon film layers. In yet another method, one of the amorphous silicon film layers about the oxide layer is doped. In another embodiment, a layer of conductive, highly diffusible material is formed either on or under the amorphous silicon film. The feature size and thickness of the amorphous silicon film are selected to minimize further the leakage current while providing the desired programming voltage. A method also is described for for forming a field programmable gate array with antifuses.
摘要翻译：在形成具有显着降低的漏电流的非晶硅反熔丝的一种方法中，在两个电极之间的反熔丝通孔中形成非晶硅膜。非晶硅膜使用等离子体增强化学气相沉积，优选在硅烷 - 氩气环境中并在200-500℃的温度下沉积，或者以各种反应性气体反应溅射。在另一种方法中，将氧化物层放置在两个非晶硅膜层之间。在另一种方法中，围绕氧化物层的非晶硅膜之一被掺杂。在另一个实施例中，在非晶硅膜上或下形成导电的，高度可扩散的材料层。选择非晶硅膜的特征尺寸和厚度，以在提供期望的编程电压的同时进一步最小化漏电流。还描述了用于形成具有反熔丝的现场可编程门阵列的方法。

4. 发明授权

US5780919A Electrically programmable interconnect structure having a PECVD amorphous silicon element 失效
标题翻译：具有PECVD非晶硅元件的电可编程互连结构
公开(公告)号：US5780919A
公开(公告)日：1998-07-14
申请号：US646823
申请日：1996-05-21
申请人： Hua-Thye Chua , Andrew K. Chan , John M. Birkner , Ralph G. Whitten , Richard L. Bechtel , Mammen Thomas
发明人： Hua-Thye Chua , Andrew K. Chan , John M. Birkner , Ralph G. Whitten , Richard L. Bechtel , Mammen Thomas
IPC分类号： H01L21/82 , H01L23/525 , H01L27/10 , H01L29/00
CPC分类号： H01L23/5252 , H01L2924/0002
摘要： In one method for forming amorphous silicon antifuses with significantly reduced leakage current, a film of amorphous silicon is formed in a antifuse via between two electrodes. The amorphous silicon film is deposited using plasma enhanced chemical vapor deposition, preferably in an silane-argon environment and at a temperature between 200 and 500 degrees C., or reactively sputtered in a variety of reactive gases. In another method, an oxide layer is placed between two amorphous silicon film layers. In yet another method, one of the amorphous silicon film layers about the oxide layer is doped. In another embodiment, a layer of conductive, highly diffusible material is formed either on or under the amorphous silicon film. The feature size and thickness of the amorphous silicon film are selected to minimize further the leakage current while providing the desired programming voltage. A method also is described for forming a field programmable gate array with antifuses.
摘要翻译：在形成具有显着降低的漏电流的非晶硅反熔丝的一种方法中，在两个电极之间的反熔丝通孔中形成非晶硅膜。非晶硅膜使用等离子体增强化学气相沉积，优选在硅烷 - 氩气环境中并在200-500℃的温度下沉积，或者以各种反应性气体反应溅射。在另一种方法中，将氧化物层放置在两个非晶硅膜层之间。在另一种方法中，围绕氧化物层的非晶硅膜之一被掺杂。在另一个实施例中，在非晶硅膜上或下形成导电的，高度可扩散的材料层。选择非晶硅膜的特征尺寸和厚度，以在提供期望的编程电压的同时进一步最小化漏电流。描述了用反熔丝形成现场可编程门阵列的方法。

5. 发明授权

US5717230A Field programmable gate array having reproducible metal-to-metal amorphous silicon antifuses 失效
标题翻译：现场可编程门阵列具有可再现的金属至金属非晶硅反熔丝
公开(公告)号：US5717230A
公开(公告)日：1998-02-10
申请号：US323168
申请日：1994-10-13
申请人： Hua-Thye Chua , Andrew K. Chan , John M. Birkner , Ralph G. Whitten , Richard L. Bechtel , Mammen Thomas
发明人： Hua-Thye Chua , Andrew K. Chan , John M. Birkner , Ralph G. Whitten , Richard L. Bechtel , Mammen Thomas
IPC分类号： H01L23/525 , H01L27/02
CPC分类号： H01L23/5252 , H01L2924/0002
摘要： A field programmable gate array has a programmable interconnect structure comprising metal signal conductors and metal-to-metal PECVD amorphous silicon antifuses. The metal-to-metal PECVD amorphous silicon antifuses have an unprogrammed resistance of at least 550 megaohms and a programmed resistance of under 200 ohms.
摘要翻译：现场可编程门阵列具有包括金属信号导体和金属对金属PECVD非晶硅反熔丝的可编程互连结构。金属对金属PECVD非晶硅反熔丝具有至少550兆欧姆的未编程电阻和低于200欧姆的编程电阻。

6. 发明授权

US5726586A Programmable application specific integrated circuit and logic cell therefor 失效
公开(公告)号：US5726586A
公开(公告)日：1998-03-10
申请号：US744225
申请日：1996-11-05
申请人： Andrew K. Chan , John M. Birkner , Hua-Thye Chua
发明人： Andrew K. Chan , John M. Birkner , Hua-Thye Chua
IPC分类号： H03K3/356 , H03K17/00 , H03K19/173 , H03K19/177
CPC分类号： H03K19/17736 , H03K19/1737 , H03K19/17704 , H03K19/17728 , H03K19/1774 , H03K19/1778 , H03K19/17792
摘要： A field programmable gate array includes a programmable routing network, a programmable configuration network integrated with the programmable routing network; and a logic cell integrated with the programmable configuration network. The logic cell includes four two-input AND gates, two six-input AND gates, three multiplexers, and a delay flipflop. The logic cell is a powerful general purpose universal logic building block suitable for implementing most TTL and gate array macrolibrary functions. A considerable variety of functions are realizable with one cell delay, including combinational logic functions as wide as thirteen inputs, all boolean transfer functions for up to three inputs, and sequential flipflop functions such as T, JK and count with carry-in.

7. 发明授权

US5986468A Programmable application specific integrated circuit and logic cell therefor 失效
公开(公告)号：US5986468A
公开(公告)日：1999-11-16
申请号：US988432
申请日：1997-12-11
申请人： Andrew K. Chan , John M. Birkner , Hua-Thye Chua
发明人： Andrew K. Chan , John M. Birkner , Hua-Thye Chua
IPC分类号： H03K3/356 , H03K17/00 , H03K19/173 , H03K19/177
CPC分类号： H03K19/17736 , H03K19/1737 , H03K19/17704 , H03K19/17728 , H03K19/1774 , H03K19/1778 , H03K19/17792
摘要： A field programmable gate array includes a programmable routing network, a programmable configuration network integrated with the programmable routing network; and a logic cell integrated with the programmable configuration network. The logic cell includes four two-input AND gates, two six-input AND gates, three multiplexers, and a delay flipflop. The logic cell is a powerful general purpose universal logic building block suitable for implementing most TTL and gate array macrolibrary functions. A considerable variety of functions are realizable with one cell delay, including combinational logic functions as wide as thirteen inputs, all boolean transfer functions for up to three inputs, and sequential flipflop functions such as T, JK and count with carry-in.

8. 发明授权

US5430390A Programmable application specific integrated circuit and logic cell therefor 失效
公开(公告)号：US5430390A
公开(公告)日：1995-07-04
申请号：US245309
申请日：1994-05-17
申请人： Andrew K. Chan , John M. Birkner , Hua-Thye Chua
发明人： Andrew K. Chan , John M. Birkner , Hua-Thye Chua
IPC分类号： H03K3/356 , H03K17/00 , H03K19/173 , H03K19/177
CPC分类号： H03K19/17736 , H03K19/1737 , H03K19/17704 , H03K19/17728 , H03K19/1774 , H03K19/1778 , H03K19/17792
摘要： A field programmable gate array includes a programmable routing network, a programmable configuration network integrated with the programmable routing network; and a logic cell integrated with the programmable configuration network. The logic cell includes four two-input AND gates, two six-input AND gates, three multiplexers, and a delay flipflop. The logic cell is a powerful general purpose universal logic building block suitable for implementing most TTL and gate array macrolibrary functions. A considerable variety of functions are realizable with one cell delay, including combinational logic functions as wide as thirteen inputs, all boolean transfer functions for up to three inputs, and sequential flipflop functions such as T, JK and count with carry-in.

9. 发明授权

US6078191A Programmable application specific integrated circuit and logic cell 失效
标题翻译：可编程专用集成电路和逻辑单元
公开(公告)号：US6078191A
公开(公告)日：2000-06-20
申请号：US38728
申请日：1998-03-10
申请人： Andrew K. Chan , John M. Birkner , Hua-Thye Chua
发明人： Andrew K. Chan , John M. Birkner , Hua-Thye Chua
IPC分类号： H03K3/356 , H03K17/00 , H03K19/173 , H03K19/177
CPC分类号： H03K19/17736 , H03K19/1737 , H03K19/17704 , H03K19/17728 , H03K19/1774 , H03K19/1778 , H03K19/17792
摘要： A field programmable gate array includes a programmable routing network, a programmable configuration network integrated with the programmable routing network; and a logic cell integrated with the programmable configuration network. The logic cell includes four two-input AND gates, two six-input AND gates, three multiplexers, and a delay flipflop. The logic cell is a powerful general purpose universal logic building block suitable for implementing most TTL and gate array macrolibrary functions. A considerable variety of functions are realizable with one cell delay, including combinational logic functions as wide as thirteen inputs, all boolean transfer functions for up to three inputs, and sequential flipflop functions such as T, JK and count with carry-in.
摘要翻译：现场可编程门阵列包括可编程路由网络，与可编程路由网络集成的可编程配置网络; 以及与可编程配置网络集成的逻辑单元。逻辑单元包括四个双输入与门，两个六输入与门，三个多路复用器和延迟触发器。逻辑单元是一种强大的通用逻辑构建块，适用于实现大多数TTL和门阵列宏图程序功能。相当多种功能可以通过一个单元延迟来实现，包括宽达十三个输入的组合逻辑功能，最多三个输入的所有布尔传递函数，以及顺序触发器功能，如T，JK和带进位的计数。

10. 发明授权

US5122685A Programmable application specific integrated circuit and logic cell therefor 失效
标题翻译：可编程专用集成电路和逻辑单元
公开(公告)号：US5122685A
公开(公告)日：1992-06-16
申请号：US665103
申请日：1991-03-06
申请人： Andrew K. Chan , John M. Birkner , Hua-Thye Chua
发明人： Andrew K. Chan , John M. Birkner , Hua-Thye Chua
IPC分类号： H03K3/356 , H03K17/00 , H03K19/173 , H03K19/177
CPC分类号： H03K19/17736 , H03K19/1737 , H03K19/17704 , H03K19/17728 , H03K19/1774 , H03K19/1778 , H03K19/17792
摘要： A field programmable gate array includes a programmable routing network, a programmable configuration network integrated with the programmable routing network; and a logic cell integrated with the programmable configuration network. The logic cell includes four two-input AND gates, two six-input AND gates, three multiplexers, and a delay flipflop. The logic cell is a powerful general purpose universal logic building block suitable for implementing most TTL and gate array macrolibrary functions. A considerable variety of functions are realizable with one cell delay, including combinational logic functions as wide as thirteen inputs, all boolean transfer functions for up to three inputs, and sequential flipflop functions such as T, JK and count with carry-in.
摘要翻译：现场可编程门阵列包括可编程路由网络，与可编程路由网络集成的可编程配置网络; 以及与可编程配置网络集成的逻辑单元。逻辑单元包括四个双输入与门，两个六输入与门，三个多路复用器和延迟触发器。逻辑单元是一种强大的通用逻辑构建块，适用于实现大多数TTL和门阵列宏图程序功能。相当多种功能可以通过一个单元延迟来实现，包括宽达十三个输入的组合逻辑功能，最多三个输入的所有布尔传递函数，以及顺序触发器功能，如T，JK和带进位的计数。

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