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1. 发明申请

US20070155173A1 Nanowires and method for making the same 有权
标题翻译：纳米线和制作方法
公开(公告)号：US20070155173A1
公开(公告)日：2007-07-05
申请号：US11507448
申请日：2006-08-22
申请人： Hsueh-Shih Chen , Shu-Ru Chung , Gwo-Yang Chang , Shih-Jung Tsai
发明人： Hsueh-Shih Chen , Shu-Ru Chung , Gwo-Yang Chang , Shih-Jung Tsai
IPC分类号： H01L21/44
CPC分类号： C30B29/60 , C30B7/00 , C30B29/46 , Y10S977/773 , Y10S977/775 , Y10S977/813 , Y10S977/824
摘要： A method for preparing nanowires is disclosed, which comprises the following steps: (a) providing a first precursor solution containing IIB group elements, and a second precursor solution containing VIA group elements; (b) mixing and heating the first precursor solution and the second precursor solution to form a mixed solution; and (c) cooling the mixed solution and filtering the mixed solution to obtain nanowires. The first precursor solution includes compounds of IIB group elements and a surfactant. The second precursor solution includes compounds of VIA group elements. Besides, the surfactant is an organic acid having an aromatic group or a salt thereof.
摘要翻译：公开了制备纳米线的方法，其包括以下步骤：（a）提供含有IIB族元素的第一前体溶液和含有VIA族元素的第二前体溶液; （b）混合和加热第一前体溶液和第二前体溶液以形成混合溶液; 和（c）冷却混合溶液并过滤混合溶液以获得纳米线。第一前体溶液包括IIB族元素和表面活性剂的化合物。第二前体溶液包括VIA族元素的化合物。此外，表面活性剂是具有芳香族基团的有机酸或其盐。

2. 发明申请

US20070151597A1 Nanocrystal and photovoltaic device comprising the same 审中-公开
标题翻译：纳米晶体和包含其的光电器件
公开(公告)号：US20070151597A1
公开(公告)日：2007-07-05
申请号：US11515031
申请日：2006-09-05
申请人： Hsueh-Shih Chen , Shu-Ru Chung , Gwo-Yang Chang , Shih-Jung Tsai
发明人： Hsueh-Shih Chen , Shu-Ru Chung , Gwo-Yang Chang , Shih-Jung Tsai
IPC分类号： H01L31/00
CPC分类号： H01L31/0352 , B82Y30/00 , H01L31/1828 , H01L51/0035 , H01L51/0036 , H01L51/005 , H01L51/422 , H01L51/426 , Y02E10/543 , Y02E10/549 , Y02P70/521
摘要： A nanocrystal with high light absorption efficiency and a broad absorption spectrum, and a photovoltaic device comprising the nanocrystal are disclosed. The nanocrystal of the present invention comprises a core, a first shell grown and formed on the surface of the core, and a second shell grown and formed on the surface of the core or the surface of the first shell. Besides, the core, the first shell, and the second shell are a low energy gap material, a middle energy gap material, and a high energy gap material, respectively. Therefore, the nanocrystal has a great absorption in the ultraviolet range, the visible light range, and the infrared range; and the solar spectrum can be converted effectively to improve the light conversion efficiency thereof.
摘要翻译：公开了具有高光吸收效率和宽吸收光谱的纳米晶体，以及包含纳米晶体的光电器件。本发明的纳米晶体包括芯，在芯的表面上生长并形成的第一壳，以及在芯的表面或第一壳的表面上生长和形成的第二壳。此外，芯，第一壳和第二壳分别是低能隙材料，中间能隙材料和高能隙材料。因此，纳米晶体在紫外线范围，可见光范围和红外范围内具有很大的吸收; 并且可以有效地转换太阳光谱以提高其光转换效率。

3. 发明授权

US07566435B2 Nanowires and method for making the same 有权
标题翻译：纳米线和制作方法
公开(公告)号：US07566435B2
公开(公告)日：2009-07-28
申请号：US11507448
申请日：2006-08-22
申请人： Hsueh-Shih Chen , Shu-Ru Chung , Gwo-Yang Chang , Shih-Jung Tsai
发明人： Hsueh-Shih Chen , Shu-Ru Chung , Gwo-Yang Chang , Shih-Jung Tsai
IPC分类号： C01B19/00 , C01B19/04 , C01B17/00 , H01M4/58 , C01G9/08 , C01B17/42 , H01L21/36
CPC分类号： C30B29/60 , C30B7/00 , C30B29/46 , Y10S977/773 , Y10S977/775 , Y10S977/813 , Y10S977/824
摘要： A method for preparing nanowires is disclosed, which comprises the following steps: (a) providing a first precursor solution containing IIB group elements, and a second precursor solution containing VIA group elements; (b) mixing and heating the first precursor solution and the second precursor solution to form a mixed solution; and (c) cooling the mixed solution and filtering the mixed solution to obtain nanowires. The first precursor solution includes compounds of IIB group elements and a surfactant. The second precursor solution includes compounds of VIA group elements. Besides, the surfactant is an organic acid having an aromatic group or a salt thereof.
摘要翻译：公开了制备纳米线的方法，其包括以下步骤：（a）提供含有IIB族元素的第一前体溶液和含有VIA族元素的第二前体溶液; （b）混合和加热第一前体溶液和第二前体溶液以形成混合溶液; 和（c）冷却混合溶液并过滤混合溶液以获得纳米线。第一前体溶液包括IIB族元素和表面活性剂的化合物。第二前体溶液包括VIA族元素的化合物。此外，表面活性剂是具有芳香族基团的有机酸或其盐。

4. 发明授权

US07935388B2 Process for forming a quantum-dot particle layer on a substrate 有权
标题翻译：在基板上形成量子点粒子层的工艺
公开(公告)号：US07935388B2
公开(公告)日：2011-05-03
申请号：US12494706
申请日：2009-06-30
申请人： Hsueh-Shih Chen , Dai-Luon Lo , Gwo-Yang Chang , Chien-Ming Chen
发明人： Hsueh-Shih Chen , Dai-Luon Lo , Gwo-Yang Chang , Chien-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L33/08
摘要： A method for manufacturing a quantum-dot element utilizes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on a substrate. A substrate-supporting base is located inside the reaction chamber for fixing the substrate. An atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The method for manufacturing a quantum-dot element forms a quantum dot layer with uniformly distributed quantum dots and integrates the processes for forming the quantum-dot layer, the buffer layer, and the electrode layer together in the same chamber.
摘要翻译：用于制造量子点元件的方法利用反应室来蒸发或溅射基板上的至少一个电极层或至少一个缓冲层。基板支撑基座位于反应室内部，用于固定基板。雾化器具有气体入口和样品入口。更具体地，气体入口和样品入口分别向雾化器供给具有多个官能化量子点的气体和前体溶液，从而在衬底上形成量子点层。量子点元件的制造方法形成了具有均匀分布的量子点的量子点层，并且将同时形成量子点层，缓冲层和电极层的工序集成在一起。

5. 发明授权

US07303937B2 Method of manufacturing a quantum-dot element 有权
标题翻译：量子点元件的制造方法
公开(公告)号：US07303937B2
公开(公告)日：2007-12-04
申请号：US11187829
申请日：2005-07-25
申请人： Hsueh-Shih Chen , Dai-Luon Lo , Gwo-Yang Chang , Chien-Ming Chen
发明人： Hsueh-Shih Chen , Dai-Luon Lo , Gwo-Yang Chang , Chien-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L33/08
摘要： A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of a plurality of functionalized quantum dots dispersed in a solvent. Simultaneously, a substrate is placed on the substrate-supporting base in the deposition chamber. Finally, the sample solution and a gas are transferred into the atomizer through the sample inlet and the gas inlet respectively for generating quantum-dot droplets, which subsequently deposit on the substrate in the deposition chamber. The quantum-dot element manufactured by the present invention has a uniform distribution of quantum dots that have a small size and, therefore, the quality of the quantum-dot element can be substantially improved.
摘要翻译：公开了一种制造量子点元件的方法。该方法包括以下步骤。首先，提供具有至少一个雾化器和基板支撑基底的沉积室。雾化器连接到气体入口和样品入口。然后，制备由分散在溶剂中的多个官能化量子点构成的样品溶液。同时，将基板放置在沉积室中的基板支撑基底上。最后，样品溶液和气体分别通过样品入口和气体入口转移到雾化器中，用于产生量子点液滴，其随后沉积在沉积室中的基底上。由本发明制造的量子点元件具有尺寸小的量子点的均匀分布，因此量子点元件的质量可以显着提高。

6. 发明申请

US20090263580A1 APPARATUS FOR MANUFACTURING A QUANTUM-DOT ELEMENT 有权
标题翻译：用于制造量子元件的装置
公开(公告)号：US20090263580A1
公开(公告)日：2009-10-22
申请号：US12494706
申请日：2009-06-30
申请人： Hsueh-Shih CHEN , Dai-Luon Lo , Gwo-Yang Chang , Chien-Ming Chen
发明人： Hsueh-Shih CHEN , Dai-Luon Lo , Gwo-Yang Chang , Chien-Ming Chen
IPC分类号： C23C16/44 , B82B1/00 , B82B3/00 , H01L21/20
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L33/08
摘要： An apparatus for manufacturing a quantum-dot element is disclosed. The apparatus includes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on the substrate. The substrate-supporting base is located inside the reaction chamber for fixing the substrate. The atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The apparatus of the present invention can form a quantum dot layer with uniformly distributed quantum dots and integrate the processes for forming a quantum-dot layer, a buffer layer, and an electrode layer together at the same chamber. Therefore, the quality of produced element can be substantially improved.
摘要翻译：公开了一种用于制造量子点元件的装置。该装置包括用于在衬底上蒸发或溅射至少一个电极层或至少一个缓冲层的反应室。基板支撑基座位于反应室内部，用于固定基板。雾化器具有气体入口和样品入口。更具体地，气体入口和样品入口分别向雾化器供给具有多个官能化量子点的气体和前体溶液，从而在衬底上形成量子点层。本发明的装置可以形成具有均匀分布的量子点的量子点层，并将在量子点层，缓冲层和电极层的形成过程集成在一起。因此，可以显着提高生产元件的质量。

7. 发明申请

US20060046330A1 Method for manufacturing a quantum-dot element 有权
标题翻译：量子点元件制造方法
公开(公告)号：US20060046330A1
公开(公告)日：2006-03-02
申请号：US11187829
申请日：2005-07-25
申请人： Hsueh-Shih Chen , Dai-Luon Lo , Gwo-Yang Chang , Chien-Ming Chen
发明人： Hsueh-Shih Chen , Dai-Luon Lo , Gwo-Yang Chang , Chien-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L33/08
摘要： A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of a plurality of functionalized quantum dots dispersed in a solvent. Simultaneously, a substrate is placed on the substrate-supporting base in the deposition chamber. Finally, the sample solution and a gas are transferred into the atomizer through the sample inlet and the gas inlet respectively for generating quantum-dot droplets, which subsequently deposit on the substrate in the deposition chamber. The quantum-dot element manufactured by the present invention has a uniform distribution of quantum dots that have a small size and, therefore, the quality of the quantum-dot element can be substantially improved.
摘要翻译：公开了一种制造量子点元件的方法。该方法包括以下步骤。首先，提供具有至少一个雾化器和基板支撑基底的沉积室。雾化器连接到气体入口和样品入口。然后，制备由分散在溶剂中的多个官能化量子点构成的样品溶液。同时，将基板放置在沉积室中的基板支撑基底上。最后，样品溶液和气体分别通过样品入口和气体入口转移到雾化器中，用于产生量子点液滴，随后沉积在沉积室中的基底上。由本发明制造的量子点元件具有尺寸小的量子点的均匀分布，因此量子点元件的质量可以显着提高。

8. 发明申请

US20050139852A1 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US20050139852A1
公开(公告)日：2005-06-30
申请号：US11020764
申请日：2004-12-23
申请人： Hsueh-Shih Chen , Gwo-Yang Chang , Chien-Ming Chen , Jun-Ren Lo , Shyh-Yang Lee
发明人： Hsueh-Shih Chen , Gwo-Yang Chang , Chien-Ming Chen , Jun-Ren Lo , Shyh-Yang Lee
IPC分类号： H01L31/0256 , H01L33/50 , H01L33/00
CPC分类号： H01L33/502 , B82Y10/00 , Y10S428/917
摘要： A light emitting diode. The light emitting diode comprises a lead frame and an LED chip therein. Packaging material in the lead frame is covers the LED chip. A plurality of ZnX quantum dots dispersed in the packaging material, wherein X is S, Se, Te or a combination thereof. A plurality of organic molecules covers each ZnX quantum dot.
摘要翻译：发光二极管。发光二极管在其中包括引线框架和LED芯片。引线框架中的封装材料覆盖LED芯片。分散在包装材料中的多个ZnX量子点，其中X是S，Se，Te或它们的组合。多个有机分子覆盖每个ZnX量子点。

9. 发明授权

US07507599B1 ZnX (X=S, Se, Te) quantum dot preparation method 有权
标题翻译： ZnX（X = S，Se，Te）量子点制备方法
公开(公告)号：US07507599B1
公开(公告)日：2009-03-24
申请号：US11007882
申请日：2004-12-09
申请人： Hsueh-Shih Chen , Gwo-Yang Chang , Chien-Ming Chen
发明人： Hsueh-Shih Chen , Gwo-Yang Chang , Chien-Ming Chen
IPC分类号： H01L21/02 , H01L33/00
CPC分类号： C01B19/007 , B82Y10/00 , B82Y30/00 , C01G9/08 , C01P2002/72 , C01P2002/84 , C01P2002/85 , C01P2004/04 , C01P2004/64 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/883 , H01L21/02554 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02601 , H01L21/02628 , H01L29/127 , H01L29/22 , Y10S977/774 , Y10S977/811 , Y10S977/896
摘要： A ZnX, X is S, Se, Te or a combination thereof, quantum dot preparation method. This method comprises the following steps: dissolving S powder, Se powder, Te powder or a combination thereof into an organic alkali to form a first complex solution; dissolving ZnO into an organic acid and a co-solvent to form a second complex solution; and mixing the first complex solution and the second complex solution to obtain the ZnX quantum dot.
摘要翻译： ZnX，X是S，Se，Te或其组合，量子点制备方法。该方法包括以下步骤：将S粉末，Se粉末，Te粉末或其组合溶解在有机碱中形成第一络合物溶液; 将ZnO溶解在有机酸和共溶剂中以形成第二配合物溶液; 并混合第一配合物溶液和第二配合物溶液以获得ZnX量子点。

10. 发明申请

US20090074653A1 ZNX (X=S, SE, TE) QUANTUM DOT PREPARATION METHOD 有权
标题翻译： ZNX（X = S，SE，TE）量子制备方法
公开(公告)号：US20090074653A1
公开(公告)日：2009-03-19
申请号：US11007882
申请日：2004-12-09
申请人： Hsueh-Shih Chen , Gwo-Yang Chang , Chien-Ming Chen
发明人： Hsueh-Shih Chen , Gwo-Yang Chang , Chien-Ming Chen
IPC分类号： C01B19/04 , C01G9/08
CPC分类号： C01B19/007 , B82Y10/00 , B82Y30/00 , C01G9/08 , C01P2002/72 , C01P2002/84 , C01P2002/85 , C01P2004/04 , C01P2004/64 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/883 , H01L21/02554 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02601 , H01L21/02628 , H01L29/127 , H01L29/22 , Y10S977/774 , Y10S977/811 , Y10S977/896
摘要： A ZnX, X is S, Se, Te or a combination thereof, quantum dot preparation method. This method comprises the following steps: dissolving S powder, Se powder, Te powder or a combination thereof into an organic alkali to form a first complex solution; dissolving ZnO into an organic acid and a co-solvent to form a second complex solution; and mixing the first complex solution and the second complex solution to obtain the ZnX quantum dot.
摘要翻译： ZnX，X是S，Se，Te或其组合，量子点制备方法。该方法包括以下步骤：将S粉末，Se粉末，Te粉末或其组合溶解在有机碱中形成第一络合物溶液; 将ZnO溶解在有机酸和共溶剂中以形成第二配合物溶液; 并混合第一配合物溶液和第二配合物溶液以获得ZnX量子点。

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