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1. 发明授权

US07566435B2 Nanowires and method for making the same 有权
标题翻译：纳米线和制作方法
公开(公告)号：US07566435B2
公开(公告)日：2009-07-28
申请号：US11507448
申请日：2006-08-22
申请人： Hsueh-Shih Chen , Shu-Ru Chung , Gwo-Yang Chang , Shih-Jung Tsai
发明人： Hsueh-Shih Chen , Shu-Ru Chung , Gwo-Yang Chang , Shih-Jung Tsai
IPC分类号： C01B19/00 , C01B19/04 , C01B17/00 , H01M4/58 , C01G9/08 , C01B17/42 , H01L21/36
CPC分类号： C30B29/60 , C30B7/00 , C30B29/46 , Y10S977/773 , Y10S977/775 , Y10S977/813 , Y10S977/824
摘要： A method for preparing nanowires is disclosed, which comprises the following steps: (a) providing a first precursor solution containing IIB group elements, and a second precursor solution containing VIA group elements; (b) mixing and heating the first precursor solution and the second precursor solution to form a mixed solution; and (c) cooling the mixed solution and filtering the mixed solution to obtain nanowires. The first precursor solution includes compounds of IIB group elements and a surfactant. The second precursor solution includes compounds of VIA group elements. Besides, the surfactant is an organic acid having an aromatic group or a salt thereof.
摘要翻译：公开了制备纳米线的方法，其包括以下步骤：（a）提供含有IIB族元素的第一前体溶液和含有VIA族元素的第二前体溶液; （b）混合和加热第一前体溶液和第二前体溶液以形成混合溶液; 和（c）冷却混合溶液并过滤混合溶液以获得纳米线。第一前体溶液包括IIB族元素和表面活性剂的化合物。第二前体溶液包括VIA族元素的化合物。此外，表面活性剂是具有芳香族基团的有机酸或其盐。

2. 发明授权

US07342260B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US07342260B2
公开(公告)日：2008-03-11
申请号：US11020764
申请日：2004-12-23
申请人： Hsueh-Shih Chen , Gwo-Yang Chang , Chien-Ming Chen , Jun-Ren Lo , Shyh-Yang Lee
发明人： Hsueh-Shih Chen , Gwo-Yang Chang , Chien-Ming Chen , Jun-Ren Lo , Shyh-Yang Lee
IPC分类号： H01L29/22
CPC分类号： H01L33/502 , B82Y10/00 , Y10S428/917
摘要： A light emitting diode. The light emitting diode comprises a lead frame and an LED chip therein. Packaging material in the lead frame is covers the LED chip. A plurality of ZnX quantum dots dispersed in the packaging material, wherein X is S, Se, Te or a combination thereof. A plurality of organic molecules covers each ZnX quantum dot.
摘要翻译：发光二极管。发光二极管在其中包括引线框架和LED芯片。引线框架中的封装材料覆盖了LED芯片。分散在包装材料中的多个ZnX量子点，其中X是S，Se，Te或它们的组合。多个有机分子覆盖每个ZnX量子点。

3. 发明授权

US07192850B2 Method for doping quantum dots 有权
标题翻译：掺杂量子点的方法
公开(公告)号：US07192850B2
公开(公告)日：2007-03-20
申请号：US11024801
申请日：2004-12-30
申请人： Hsueh-Shih Chen , Dai-Luon Lo , Chien-Ming Chen , Gwo-Yang Chang
发明人： Hsueh-Shih Chen , Dai-Luon Lo , Chien-Ming Chen , Gwo-Yang Chang
IPC分类号： H01L21/00
CPC分类号： B82Y30/00 , B82Y10/00 , C23C18/08 , H01L21/02409 , H01L21/02439 , H01L21/0256 , H01L21/02581 , H01L21/02601 , H01L21/02628 , Y10S977/774
摘要： A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second precursor solution for forming a plurality of II–VI compound cores of the quantum dots dispersing in a melting mixed solution; and injecting a third precursor solution for a group VI element and a forth precursor solution with at least one dopant to the mixed solution in turn at a fixed time interval in order to form quantum dots with multi-shell dopant; wherein the dopant described here is selected from a group consisting of transitional metal and halogen elements. This method of the invention can dope the dopants in the inner quantum dot and enhance the emission intensity efficiently.
摘要翻译：公开了一种用于形成量子点的掺杂方法，其包括以下步骤：为第Ⅵ族元素提供第一前体溶液和为Ⅵ族元素提供第二前体溶液; 加热和混合第一前体溶液和第二前体溶液，以形成分散在熔融混合溶液中的量子点的多个II-VI化合物核心; 并且以固定的时间间隔依次向所述混合溶液中注入具有至少一种掺杂剂的第Ⅵ族元素和第四前体溶液的第三前体溶液，以形成具有多壳掺杂剂的量子点; 其中这里描述的掺杂剂选自由过渡金属和卤素元素组成的组。本发明的这种方法可以掺杂在内量子点中并有效地提高发射强度。

4. 发明申请

US20050287691A1 Method for doping quantum dots 有权
标题翻译：掺杂量子点的方法
公开(公告)号：US20050287691A1
公开(公告)日：2005-12-29
申请号：US11024801
申请日：2004-12-30
申请人： Hsueh-Shih Chen , Dai-Luon Lo , Chien-Ming Chen , Gwo-Yang Chang
发明人： Hsueh-Shih Chen , Dai-Luon Lo , Chien-Ming Chen , Gwo-Yang Chang
IPC分类号： C23C18/08 , H01L21/00 , H01L21/22 , H01L21/368
CPC分类号： B82Y30/00 , B82Y10/00 , C23C18/08 , H01L21/02409 , H01L21/02439 , H01L21/0256 , H01L21/02581 , H01L21/02601 , H01L21/02628 , Y10S977/774
摘要： A doping method for forming quantum dots is disclosed, which includes following steps: providing a first precursor solution for a group II element and a second precursor solution for a group VI element; heating and mixing the first precursor solution and the second precursor solution for forming a plurality of II-VI compound cores of the quantum dots dispersing in a melting mixed solution; and injecting a third precursor solution for a group VI element and a forth precursor solution with at least one dopant to the mixed solution in turn at a fixed time interval in order to form quantum dots with multi-shell dopant; wherein the dopant described here is selected from a group consisting of transitional metal and halogen elements. This method of the invention can dope the dopants in the inner quantum dot and enhance the emission intensity efficiently.
摘要翻译：公开了一种用于形成量子点的掺杂方法，其包括以下步骤：为第Ⅵ族元素提供第一前体溶液和为Ⅵ族元素提供第二前体溶液; 加热和混合第一前体溶液和第二前体溶液，以形成分散在熔融混合溶液中的量子点的多个II-VI化合物核心; 并且以固定的时间间隔依次向所述混合溶液中注入具有至少一种掺杂剂的第Ⅵ族元素和第四前体溶液的第三前体溶液，以形成具有多壳掺杂剂的量子点; 其中这里描述的掺杂剂选自由过渡金属和卤素元素组成的组。本发明的这种方法可以掺杂在内量子点中并有效地提高发射强度。

5. 发明授权

US06838508B2 Polyolefin-based nanocomposite and preparation thereof 有权
标题翻译：聚烯烃基纳米复合材料及其制备
公开(公告)号：US06838508B2
公开(公告)日：2005-01-04
申请号：US10138480
申请日：2002-05-06
申请人： Ming-Siao Hsiao , Gwo-Yang Chang , Shyh-Yang Lee , Sung-Jeng Jong
发明人： Ming-Siao Hsiao , Gwo-Yang Chang , Shyh-Yang Lee , Sung-Jeng Jong
IPC分类号： C08K5/19 , C08K9/04 , C08K3/34
CPC分类号： C08K5/19 , C08K9/04 , C08L23/02
摘要： A polyolefin-based nanocomposite and a method of preparing the same are disclosed. The polyolefin-based nanocomposite is prepared by melt kneading a mixture including (A) 40-99.8% by weight of a matrix polymer of polyolefin; (B) 0.1-30% by weight of a polyolefin compatilizer containing polar reactive groups; and (C) 0.1-30% by weight of a layered clay material having a quaternary ammonium ion bonded to the surface thereof. The quaternary ammonium ion contains (I) at least one alkyl group having at least 15 carbon atoms; and (ii) a substitutent having —Si—O—Si—linkage and at least one terminal reactive group.

6. 发明授权

US07935388B2 Process for forming a quantum-dot particle layer on a substrate 有权
标题翻译：在基板上形成量子点粒子层的工艺
公开(公告)号：US07935388B2
公开(公告)日：2011-05-03
申请号：US12494706
申请日：2009-06-30
申请人： Hsueh-Shih Chen , Dai-Luon Lo , Gwo-Yang Chang , Chien-Ming Chen
发明人： Hsueh-Shih Chen , Dai-Luon Lo , Gwo-Yang Chang , Chien-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L33/08
摘要： A method for manufacturing a quantum-dot element utilizes a reaction chamber for evaporating or sputtering at least one electrode layer or at least one buffer layer on a substrate. A substrate-supporting base is located inside the reaction chamber for fixing the substrate. An atomizer has a gas inlet and a sample inlet. More specifically, the gas inlet and the sample inlet feed the atomizer respectively with a gas and a precursor solution having a plurality of functionalized quantum dots, and thereby form a quantum-dot layer on the substrate. The method for manufacturing a quantum-dot element forms a quantum dot layer with uniformly distributed quantum dots and integrates the processes for forming the quantum-dot layer, the buffer layer, and the electrode layer together in the same chamber.
摘要翻译：用于制造量子点元件的方法利用反应室来蒸发或溅射基板上的至少一个电极层或至少一个缓冲层。基板支撑基座位于反应室内部，用于固定基板。雾化器具有气体入口和样品入口。更具体地，气体入口和样品入口分别向雾化器供给具有多个官能化量子点的气体和前体溶液，从而在衬底上形成量子点层。量子点元件的制造方法形成了具有均匀分布的量子点的量子点层，并且将同时形成量子点层，缓冲层和电极层的工序集成在一起。

7. 发明授权

US07303937B2 Method of manufacturing a quantum-dot element 有权
标题翻译：量子点元件的制造方法
公开(公告)号：US07303937B2
公开(公告)日：2007-12-04
申请号：US11187829
申请日：2005-07-25
申请人： Hsueh-Shih Chen , Dai-Luon Lo , Gwo-Yang Chang , Chien-Ming Chen
发明人： Hsueh-Shih Chen , Dai-Luon Lo , Gwo-Yang Chang , Chien-Ming Chen
IPC分类号： H01L21/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/0673 , H01L33/08
摘要： A method for manufacturing a quantum-dot element is disclosed. The method includes the following steps. First, a deposition chamber having at least one atomizer and a substrate-supporting base is provided. The atomizer is connected to a gas inlet and a sample inlet. Afterwards, a sample solution is prepared composed of a plurality of functionalized quantum dots dispersed in a solvent. Simultaneously, a substrate is placed on the substrate-supporting base in the deposition chamber. Finally, the sample solution and a gas are transferred into the atomizer through the sample inlet and the gas inlet respectively for generating quantum-dot droplets, which subsequently deposit on the substrate in the deposition chamber. The quantum-dot element manufactured by the present invention has a uniform distribution of quantum dots that have a small size and, therefore, the quality of the quantum-dot element can be substantially improved.
摘要翻译：公开了一种制造量子点元件的方法。该方法包括以下步骤。首先，提供具有至少一个雾化器和基板支撑基底的沉积室。雾化器连接到气体入口和样品入口。然后，制备由分散在溶剂中的多个官能化量子点构成的样品溶液。同时，将基板放置在沉积室中的基板支撑基底上。最后，样品溶液和气体分别通过样品入口和气体入口转移到雾化器中，用于产生量子点液滴，其随后沉积在沉积室中的基底上。由本发明制造的量子点元件具有尺寸小的量子点的均匀分布，因此量子点元件的质量可以显着提高。

8. 发明授权

US5298594A Preparation of nylon 6 with alkali metal hypophosphite catalyst and organic phosphite catalyst 失效
标题翻译：用碱金属次磷酸盐催化剂和有机亚磷酸盐催化剂制备尼龙6
公开(公告)号：US5298594A
公开(公告)日：1994-03-29
申请号：US948128
申请日：1992-09-18
申请人： Wu-Bin Yuo , Gwo-Yang Chang , Jeng-Yue Wu , Mao-Song Lee
发明人： Wu-Bin Yuo , Gwo-Yang Chang , Jeng-Yue Wu , Mao-Song Lee
IPC分类号： C08G69/20
CPC分类号： C08G69/20
摘要： A method for the polymerization of Nylon 6 from caprolactam and water using a catalyst composition comprising a primary catalyst, which can be an alkali metal hypophosphite or an alkali-earth metal hypophosphite, and an organic phosphite as cocatalyst. The catalyst composition used in this invention is most useful when used in conjunction with the reactive extrusion technology which requires a very fast polymerization rate to take full advantage of this evolving technology.
摘要翻译：使用包含可以是碱金属次磷酸盐或碱土金属次磷酸盐的主催化剂和有机亚磷酸盐作为助催化剂的催化剂组合物从己内酰胺和水聚合尼龙6的方法。当与反应挤出技术结合使用时，本发明中使用的催化剂组合物是最有用的，其需要非常快的聚合速率以充分利用这种演进技术。

9. 发明授权

US07507599B1 ZnX (X=S, Se, Te) quantum dot preparation method 有权
标题翻译： ZnX（X = S，Se，Te）量子点制备方法
公开(公告)号：US07507599B1
公开(公告)日：2009-03-24
申请号：US11007882
申请日：2004-12-09
申请人： Hsueh-Shih Chen , Gwo-Yang Chang , Chien-Ming Chen
发明人： Hsueh-Shih Chen , Gwo-Yang Chang , Chien-Ming Chen
IPC分类号： H01L21/02 , H01L33/00
CPC分类号： C01B19/007 , B82Y10/00 , B82Y30/00 , C01G9/08 , C01P2002/72 , C01P2002/84 , C01P2002/85 , C01P2004/04 , C01P2004/64 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/883 , H01L21/02554 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02601 , H01L21/02628 , H01L29/127 , H01L29/22 , Y10S977/774 , Y10S977/811 , Y10S977/896
摘要： A ZnX, X is S, Se, Te or a combination thereof, quantum dot preparation method. This method comprises the following steps: dissolving S powder, Se powder, Te powder or a combination thereof into an organic alkali to form a first complex solution; dissolving ZnO into an organic acid and a co-solvent to form a second complex solution; and mixing the first complex solution and the second complex solution to obtain the ZnX quantum dot.
摘要翻译： ZnX，X是S，Se，Te或其组合，量子点制备方法。该方法包括以下步骤：将S粉末，Se粉末，Te粉末或其组合溶解在有机碱中形成第一络合物溶液; 将ZnO溶解在有机酸和共溶剂中以形成第二配合物溶液; 并混合第一配合物溶液和第二配合物溶液以获得ZnX量子点。

10. 发明申请

US20090074653A1 ZNX (X=S, SE, TE) QUANTUM DOT PREPARATION METHOD 有权
标题翻译： ZNX（X = S，SE，TE）量子制备方法
公开(公告)号：US20090074653A1
公开(公告)日：2009-03-19
申请号：US11007882
申请日：2004-12-09
申请人： Hsueh-Shih Chen , Gwo-Yang Chang , Chien-Ming Chen
发明人： Hsueh-Shih Chen , Gwo-Yang Chang , Chien-Ming Chen
IPC分类号： C01B19/04 , C01G9/08
CPC分类号： C01B19/007 , B82Y10/00 , B82Y30/00 , C01G9/08 , C01P2002/72 , C01P2002/84 , C01P2002/85 , C01P2004/04 , C01P2004/64 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/883 , H01L21/02554 , H01L21/02557 , H01L21/0256 , H01L21/02562 , H01L21/02601 , H01L21/02628 , H01L29/127 , H01L29/22 , Y10S977/774 , Y10S977/811 , Y10S977/896
摘要： A ZnX, X is S, Se, Te or a combination thereof, quantum dot preparation method. This method comprises the following steps: dissolving S powder, Se powder, Te powder or a combination thereof into an organic alkali to form a first complex solution; dissolving ZnO into an organic acid and a co-solvent to form a second complex solution; and mixing the first complex solution and the second complex solution to obtain the ZnX quantum dot.
摘要翻译： ZnX，X是S，Se，Te或其组合，量子点制备方法。该方法包括以下步骤：将S粉末，Se粉末，Te粉末或其组合溶解在有机碱中形成第一络合物溶液; 将ZnO溶解在有机酸和共溶剂中以形成第二配合物溶液; 并混合第一配合物溶液和第二配合物溶液以获得ZnX量子点。

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