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1. 发明申请

US20090046436A1 MICRO-ELECTRO-MECHANICAL-SYSTEM PACKAGE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：微电子机械系统包装及其制造方法
公开(公告)号：US20090046436A1
公开(公告)日：2009-02-19
申请号：US12126043
申请日：2008-05-23
申请人： Hsueh An YANG , Meng Jen WANG , Wei Chung WANG , Ming Chiang LEE , Wei Pin HUANG , Feng Chen CHENG
发明人： Hsueh An YANG , Meng Jen WANG , Wei Chung WANG , Ming Chiang LEE , Wei Pin HUANG , Feng Chen CHENG
IPC分类号： H05K1/00 , H05K3/10
CPC分类号： B81C1/0023 , B81B2201/0257 , H01L2224/48091 , H01L2224/48227 , H01L2924/1461 , H01L2924/3025 , Y10T29/49162 , H01L2924/00014 , H01L2924/00
摘要： A MEMS package includes a first board, a second board and a laminate material. The first board includes a lower metallic trace, a metallic diaphragm and a through opening. The lower metallic trace is located on the lower surface of the first board, and the metallic diaphragm is disposed on the lower metallic trace. The second board includes an upper metallic trace and a metallic electrode. The upper metallic trace is located on the upper surface of the second board, the metallic electrode is disposed on the upper metallic trace, and the metallic electrode is corresponding to the metallic diaphragm. The laminate material is disposed between the lower and upper metallic traces, and includes a hollow portion for accommodating the metallic electrode and metallic diaphragm, wherein a sensing unit is formed by the metallic electrode, the hollow portion and the metallic diaphragm, and is corresponding to the through opening.
摘要翻译： MEMS封装包括第一板，第二板和层压材料。第一板包括下金属痕迹，金属隔膜和通孔。下部金属轨迹位于第一板的下表面上，并且金属隔膜设置在下部金属轨迹上。第二板包括上金属痕迹和金属电极。上金属轨迹位于第二板的上表面上，金属电极设置在上金属轨迹上，金属电极对应于金属隔膜。层压材料设置在下金属轨迹和上金属迹线之间，并且包括用于容纳金属电极和金属隔膜的中空部分，其中感测单元由金属电极，中空部分和金属隔膜形成，并且对应于通过开口。

2. 发明申请

US20080303167A1 DEVICE HAVING HIGH ASPECT-RATIO VIA STRUCTURE IN LOW-DIELECTRIC MATERIAL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：具有通过低介电材料中的结构的高比例的器件及其制造方法
公开(公告)号：US20080303167A1
公开(公告)日：2008-12-11
申请号：US12050601
申请日：2008-03-18
申请人： Wei Chung WANG , Po Jen CHENG , Hsueh An YANG , Pei Chun CHEN
发明人： Wei Chung WANG , Po Jen CHENG , Hsueh An YANG , Pei Chun CHEN
IPC分类号： H01L23/522 , H01L21/768
CPC分类号： H01L23/5226 , H01L21/02118 , H01L21/312 , H01L23/525 , H01L24/03 , H01L24/05 , H01L2225/06572 , H01L2924/01014 , H01L2924/01019 , H01L2924/01078 , H01L2924/14 , H01L2924/19041
摘要： A method for manufacturing a device having a via structure includes the following steps. A seed metallic layer is formed on a substrate. A patterned metallic-trace layer is formed on the seed metallic layer. A positive-type photoresist layer is formed on the patterned metallic-trace layer and seed metallic layer. The photoresist layer is patterned for defining a through hole which exposes a part of the patterned metallic-trace layer, wherein the through hole has a high aspect ratio. A metallic material is electroplated in the through hole so as to form a metallic pillar. The photoresist layer is removed. A part of the seed metallic layer is etched, whereby traces of the patterned metallic-trace layer are electrically isolated from each other. A dielectric material layer is formed on the substrate for sealing the patterned metallic-trace layer and a part of the metallic pillar and exposing a top surface of the metallic pillar.
摘要翻译：用于制造具有通孔结构的器件的方法包括以下步骤。种子金属层形成在基片上。在种子金属层上形成图案化的金属痕迹层。在图案化的金属痕迹层和种子金属层上形成正型光致抗蚀剂层。图案化光致抗蚀剂层以限定暴露图案化的金属 - 迹线层的一部分的通孔，其中通孔具有高纵横比。在通孔中电镀金属材料，形成金属柱。去除光致抗蚀剂层。蚀刻种子金属层的一部分，由此图案化的金属迹线层的迹线彼此电隔离。在基板上形成电介质材料层，用于密封图案化的金属迹线层和金属柱的一部分并暴露金属柱的顶表面。

3. 发明申请

US20090047782A1 METHOD FOR MANUFACTURING A DEVICE HAVING A HIGH ASPECT RATIO VIA 有权
标题翻译：用于制造具有高比例比例的器件的方法
公开(公告)号：US20090047782A1
公开(公告)日：2009-02-19
申请号：US12170138
申请日：2008-07-09
申请人： Hsueh An YANG , Po Jen CHENG
发明人： Hsueh An YANG , Po Jen CHENG
IPC分类号： H01L21/44
CPC分类号： H01L21/0272 , H01L21/31144 , H01L21/32115 , H01L24/11 , H01L2224/05001 , H01L2224/05023 , H01L2224/05026 , H01L2224/051 , H01L2224/056 , H01L2924/14 , H01L2924/19041 , H01L2924/00014
摘要： Method for manufacturing a device having a conductive via includes the following steps. A dielectric material layer including a through hole is formed on a substrate. A seed metallic layer is formed on the dielectric material layer and in the through hole. A metallic layer is formed on the seed metallic layer, and is filled in the through hole. The metallic layer located over the seed metallic layer and outside the through hole is etched by a spin etching process, whereby the metallic layer located in the through hole is formed to a lower portion. An upper portion is formed on the lower portion, and a metallic trace is formed on the seed metallic layer, wherein the upper and lower portions is formed to a conductive via, and the conductive via and the metallic trace expose a part of the seed metallic layer. The exposed seed metallic layer is etched.
摘要翻译：具有导电通孔的装置的制造方法包括以下步骤。在基板上形成包括通孔的电介质材料层。在电介质材料层和通孔中形成种子金属层。在种子金属层上形成金属层，并填充在通孔中。通过旋转蚀刻工艺蚀刻位于种子金属层上方的金属层和通孔外部，由此将位于通孔中的金属层形成为下部。在下部形成上部，在种子金属层上形成金属线，其中上部和下部形成为导电通孔，并且导电通孔和金属迹线暴露出种子金属的一部分层。暴露的种子金属层被蚀刻。

4. 发明申请

US20090215228A1 WAFER LEVER FIXTURE AND METHOD FOR PACKAGING MICRO-ELECTRO-MECHANICAL-SYSTEM DEVICES 有权
标题翻译：用于包装微电子机械系统装置的滤波器装置和方法
公开(公告)号：US20090215228A1
公开(公告)日：2009-08-27
申请号：US12057949
申请日：2008-03-28
申请人： Hsueh An YANG
发明人： Hsueh An YANG
IPC分类号： H01L21/98 , H05K1/16 , G03F7/20
CPC分类号： B81C1/00269 , B81C2203/0127
摘要： A fixture for packaging MEMS devices includes a base, a first material layer, an insulating layer and a second material layer. The base defines units, each including a notch. The first material layer is disposed on the base and the notches. The insulating layer is disposed on a part of the first material layer and exposes the other part of the first material layer located on the notches. The second material layer is disposed on the other part of the first material layer and formed with caps, whereby the caps are physically connected to the MEMS devices, and the MEMS devices are corresponding to the units of the base, wherein there is a first connecting force between the first and second material layers, there is a second connecting force between the caps and the MEMS devices, and the second connecting force is greater than the first connecting force.
摘要翻译：用于封装MEMS器件的夹具包括基底，第一材料层，绝缘层和第二材料层。基座定义单元，每个单元包括一个凹口。第一材料层设置在基部和凹口上。绝缘层设置在第一材料层的一部分上并暴露位于凹口上的第一材料层的另一部分。第二材料层设置在第一材料层的另一部分上并形成有盖，由此盖物理连接到MEMS器件，并且MEMS器件对应于基座的单元，其中存在第一连接在第一和第二材料层之间的力，帽和MEMS器件之间存在第二连接力，并且第二连接力大于第一连接力。

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