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1. 发明授权

US06773969B2 Method of forming a thin film transistor 有权
标题翻译：形成薄膜晶体管的方法
公开(公告)号：US06773969B2
公开(公告)日：2004-08-10
申请号：US10249218
申请日：2003-03-24
申请人： Hsin-Hung Lee , I-Chang Tsao , Chih-Hung Su
发明人： Hsin-Hung Lee , I-Chang Tsao , Chih-Hung Su
IPC分类号： H01L2100
CPC分类号： H01L29/78696 , H01L29/6675 , H01L29/78645 , H01L29/78663 , H01L29/78672
摘要： A gate of a thin film transistor (TM is formed on a surface of a substrate. A gate insulating (GI) layer and an amorphous silicon layer are then sequentially formed on the gate. A dehydrogen treatment is performed thereafter, and a re-crystallizing process is performed to transform the amorphous silicon layer into a crystalline silicon layer. Then, a doped n+ layer is formed on the gate, and portions of the doped n+ layer and the crystalline silicon layer are removed thereafter. Finally, a source and a gate of the thin film transistor are formed on the gate, and a passivation layer Is formed to cover the source and the gate.
摘要翻译：薄膜晶体管的栅极（TM形成在基板的表面上，然后在栅极上依次形成栅极绝缘层（GI）层和非晶硅层，然后进行脱氢处理，再次结晶进行处理以将非晶硅层转化为晶体硅层，然后在栅极上形成掺杂的n +层，之后去除掺杂的n +层和晶体硅层的部分，最后在栅极上形成薄膜晶体管的源极和栅极，形成钝化层以覆盖源极和栅极。

2. 发明申请

US20050199597A1 [LASER ANNEALING APPARATUS AND LASER ANNEALING PROCESS] 审中-公开
标题翻译： [激光退火装置和激光退火工艺]
公开(公告)号：US20050199597A1
公开(公告)日：2005-09-15
申请号：US10709036
申请日：2004-04-08
申请人： I-Chang Tsao , Huan-Chao Wu , Wu-Hsiung Lin , Wen-Cheng Lin
发明人： I-Chang Tsao , Huan-Chao Wu , Wu-Hsiung Lin , Wen-Cheng Lin
IPC分类号： B23K26/00 , H01L21/324
CPC分类号： B23K26/03 , B23K37/00 , B23K37/047 , B23K2101/40 , H01L21/02532 , H01L21/02675
摘要： A laser annealing apparatus is disclosed, which is adapted for a laser annealing process. The laser annealing apparatus comprises a laser-generating module, a resistance-measuring module, and a host circuit module, wherein the laser-generating module provides a laser beam to recrystallize an amorphous silicon thin film to form a polysilicon thin film. The resistance-measuring module is adapted for measuring the sheet resistance of the polysilicon thin film. Besides, the host circuit module is electrically coupled to and between the laser-generating module and the resistance-measuring module. The host circuit module outputs a feedback signal to the laser-generating module in accordance with the sheet resistance value. Then, the energy density of the laser beam is optimized. The laser annealing apparatus can improve the quality of the thin film, and increase the yield rate of the laser annealing process.
摘要翻译：公开了一种适用于激光退火工艺的激光退火装置。激光退火装置包括激光发生模块，电阻测量模块和主电路模块，其中激光产生模块提供激光束以重结晶非晶硅薄膜以形成多晶硅薄膜。电阻测量模块适于测量多晶硅薄膜的薄层电阻。此外，主电路模块电耦合到激光发生模块和电阻测量模块之间。主机电路模块根据薄层电阻值向激光发生模块输出反馈信号。然后，激光束的能量密度被优化。激光退火装置可以提高薄膜的质量，并提高激光退火工艺的成品率。

3. 发明申请

US20050189328A1 Laser annealing apparatus and method 审中-公开
标题翻译：激光退火装置及方法
公开(公告)号：US20050189328A1
公开(公告)日：2005-09-01
申请号：US10709055
申请日：2004-04-09
申请人： I-Chang Tsao , Chih-Hsiung Chang
发明人： I-Chang Tsao , Chih-Hsiung Chang
IPC分类号： B23K26/06 , B23K26/067 , C03B25/00 , H01L21/20
CPC分类号： H01L21/0268 , B23K26/0613 , B23K26/066 , B23K26/067 , H01L21/02686 , H01L21/2026
摘要： An apparatus for laser annealing an amorphous silicon film is provided. The amorphous silicon film includes a first region and a second region not overlapped with the first region. The apparatus comprises: a laser beam source module providing a laser beam; a beam splitter, disposed on a path of the laser beam, splitting the laser beam into a first laser beam and a second laser beam; a first photomask disposed on an optical path of the first laser beam and in front of the amorphous silicon film; and a second photomask disposed an optical path of the second laser beam and in front of the amorphous silicon film; wherein the first laser beam is emitted to the first region, and the second laser beam is emitted to the amorphous silicon film in the second region after the amorphous silicon film in the first region is re-crystallized.
摘要翻译：提供了一种用于非晶硅膜激光退火的装置。非晶硅膜包括不与第一区域重叠的第一区域和第二区域。该装置包括：提供激光束的激光束源模块; 分束器，设置在激光束的路径上，将激光束分成第一激光束和第二激光束; 设置在所述第一激光束的光路上并位于所述非晶硅膜前面的第一光掩模; 以及第二光掩模，其设置所述第二激光束的光路并且在所述非晶硅膜的前方; 其中所述第一激光束被发射到所述第一区域，并且在所述第一区域中的所述非晶硅膜被再结晶之后，所述第二激光束被发射到所述第二区域中的所述非晶硅膜。

4. 发明授权

US08530771B2 Surface mount process, surface mount system, and feeding apparatus thereof 有权
标题翻译：表面贴装工艺，表面贴装系统及其馈送装置
公开(公告)号：US08530771B2
公开(公告)日：2013-09-10
申请号：US13010505
申请日：2011-01-20
申请人： Ji-Huei Chen , Ming-Hua Tsai , I-Chang Tsao , Jhih-Han Lin
发明人： Ji-Huei Chen , Ming-Hua Tsai , I-Chang Tsao , Jhih-Han Lin
IPC分类号： B07C5/00
CPC分类号： H05K13/028
摘要： A surface mount process, a surface mount system, and a feeding apparatus thereof are provided. The surface mount system includes a feeding apparatus and a surface mount apparatus. The feeding apparatus includes a vibrating tray feeder module, a vibrating linear feeder module, and a component recycling module. The vibrating tray feeder module has a circular vibrating conveyer belt with a vibrating tray output end. The vibrating linear feeder module has a linear vibrating conveyer belt connected to the vibrating tray output end and has a linear vibrating output end opposite the vibrating tray feeder module. The component recycling module is disposed under the vibrating tray feeder module to recycle the rejected components. The surface mount apparatus has a component receiving unit corresponding to the linear vibrating output end of the vibrating linear feeder module.
摘要翻译：提供表面贴装工艺，表面贴装系统及其馈送装置。表面安装系统包括进给装置和表面安装装置。进给装置包括振动盘供给模块，振动线性进给模块和部件回收模块。振动盘供料器模块具有振动盘输出端的圆形振动输送带。振动线性馈线模块具有连接到振动盘输出端的线性振动输送带，并且具有与振动盘馈送模块相对的线性振动输出端。组件回收模块设置在振动盘供料器模块下方，以回收废弃的组件。表面安装装置具有对应于振动线性馈送模块的线性振动输出端的部件接收单元。

5. 发明申请

US20110315608A1 SURFACE MOUNT PROCESS, SURFACE MOUNT SYSTEM, AND FEEDING APPARATUS THEREOF 有权
标题翻译：表面安装工艺，表面安装系统及其送料装置
公开(公告)号：US20110315608A1
公开(公告)日：2011-12-29
申请号：US13010505
申请日：2011-01-20
申请人： Ji-Huei CHEN , Ming-Hua Tsai , I-Chang Tsao , Jhih-Han Lin
发明人： Ji-Huei CHEN , Ming-Hua Tsai , I-Chang Tsao , Jhih-Han Lin
IPC分类号： B07C5/00
CPC分类号： H05K13/028
摘要： A surface mount process, a surface mount system, and a feeding apparatus thereof are provided. The surface mount system includes a feeding apparatus and a surface mount apparatus. The feeding apparatus includes a vibrating tray feeder module, a vibrating linear feeder module, and a component recycling module. The vibrating tray feeder module has a circular vibrating conveyer belt with a vibrating tray output end. The vibrating linear feeder module has a linear vibrating conveyer belt connected to the vibrating tray output end and has a linear vibrating output end opposite the vibrating tray feeder module. The component recycling module is disposed under the vibrating tray feeder module to recycle the rejected components. The surface mount apparatus has a component receiving unit corresponding to the linear vibrating output end of the vibrating linear feeder module.
摘要翻译：提供表面贴装工艺，表面贴装系统及其馈送装置。表面安装系统包括进给装置和表面安装装置。进给装置包括振动盘供给模块，振动线性进给模块和部件回收模块。振动盘供料器模块具有振动盘输出端的圆形振动输送带。振动线性馈线模块具有连接到振动盘输出端的线性振动输送带，并且具有与振动盘馈送模块相对的线性振动输出端。组件回收模块设置在振动盘供料器模块下方，以回收废弃的组件。表面安装装置具有对应于振动线性馈送模块的线性振动输出端的部件接收单元。

6. 发明授权

US07184132B2 Inspection method and apparatus of laser crystallized silicons 有权
标题翻译：激光结晶硅的检测方法和装置
公开(公告)号：US07184132B2
公开(公告)日：2007-02-27
申请号：US10792833
申请日：2004-03-05
申请人： I-Chang Tsao
发明人： I-Chang Tsao
IPC分类号： G01N21/00
CPC分类号： H01L21/02686 , G01N21/95 , H01L21/02691 , H01L21/2026 , H01L21/268
摘要： An inspection method and apparatus of laser crystallized silicons in the low-temperature poly Si (LTPS) process. The crystalline quality is inspected by using a visible light source to irradiate the surface of the poly Si and examining the variations of the reflected light caused by the protrusion arrangement at the surface of the poly Si. This method can be adopted on the poly Si samples prepared by the line scanning of the excimer laser annealing (ELA) technology.
摘要翻译：在低温多晶硅（LTPS）工艺中的激光结晶硅的检查方法和装置。通过使用可见光源照射多晶硅的表面并检查由多晶硅的表面处的突起布置引起的反射光的变化来检查晶体质量。该方法可用于通过准分子激光退火（ELA）技术的线扫描制备的多晶Si样品。

7. 发明申请

US20070054478A1 METHOD OF FORMING POLYSILICON FILM USING A LASER ANNEALING APPARATUS 审中-公开
标题翻译：使用激光退火装置形成多晶硅膜的方法
公开(公告)号：US20070054478A1
公开(公告)日：2007-03-08
申请号：US11554045
申请日：2006-10-30
申请人： I-Chang Tsao
发明人： I-Chang Tsao
IPC分类号： H01L21/20
CPC分类号： C23C16/56 , H01L21/223 , H01L21/268
摘要： An excimer laser annealing apparatus and the application of the same for stabilizing the atmosphere surrounding an area irradiated by an excimer laser. The apparatus includes a chamber, a gas diversion nozzle, an excimer laser and a gas supply device. The gas diversion nozzle is positioned inside the chamber. The laser beam produced by the excimer laser passes through the gas diversion nozzle. The gas supply device connects with the gas diversion nozzle for providing a jet of gas to the laser-irradiated area and carrying away any pollutants from the irradiated area.
摘要翻译：一种准分子激光退火装置及其应用，用于稳定由准分子激光器照射的区域周围的气氛。该装置包括腔室，气体分配喷嘴，准分子激光器和气体供应装置。气体分配喷嘴位于室内。由准分子激光器产生的激光束通过气体导流喷嘴。气体供给装置与气体分配喷嘴连接，用于向激光照射区域提供气体射流，并且从照射区域中携带任何污染物。

8. 发明申请

US20070052004A1 Method of manufacturing nano crystals and application of the same 审中-公开
标题翻译：制造纳米晶体的方法及其应用
公开(公告)号：US20070052004A1
公开(公告)日：2007-03-08
申请号：US11320061
申请日：2005-12-28
申请人： Chih-Wei Chao , Mao-Yi Chang , I-Chang Tsao
发明人： Chih-Wei Chao , Mao-Yi Chang , I-Chang Tsao
IPC分类号： H01L29/788
CPC分类号： H01L29/42332 , B82Y10/00 , H01L29/40114 , H01L31/0352 , H01L31/068 , Y02E10/547
摘要： A method of manufacturing nano crystals disclosed herein is applicable to the fabrications of memory device and solar cell. The method of manufacturing nano crystals at least comprises steps of: providing a substrate with a thin film formed thereon, and transforming the thin film into the nano crystals by laser annealing, wherein a thickness of the thin film is equal to or less than about 50 Å, and a wavelength of the laser selected for laser annealing is equal to or less than about 500 nm.
摘要翻译：本文公开的制造纳米晶体的方法适用于存储器件和太阳能电池的制造。制造纳米晶体的方法至少包括以下步骤：为基板提供形成在其上的薄膜，并通过激光退火将薄膜转变成纳米晶体，其中薄膜的厚度等于或小于约50 并且激光退火选择的激光的波长等于或小于约500nm。

9. 发明授权

US06867074B2 Method of fabricating a polysilicon layer 有权
标题翻译：制造多晶硅层的方法
公开(公告)号：US06867074B2
公开(公告)日：2005-03-15
申请号：US10248372
申请日：2003-01-15
申请人： I-Chang Tsao
发明人： I-Chang Tsao
IPC分类号： H01L21/20 , H01L21/00
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02595 , H01L21/2026
摘要： A method of fabrication a polysilicon layer is provided. A substrate is provided and then a buffer layer having a plurality of trenches thereon is formed over the substrate. Thereafter, an amorphous silicon layer is formed over the buffer layer. Finally, a laser annealing process is conducted so that the amorphous silicon layer melts and crystallizes into a polysilicon layer starting from the upper reach of the trenches. This invention can be applied to fabricate the polysilicon layer of a low temperature polysilicon thin film transistor liquid crystal display such that the crystals inside the polysilicon layer are uniformly distributed and have a larger average size.
摘要翻译：提供一种制造多晶硅层的方法。提供衬底，然后在衬底上形成其上具有多个沟槽的缓冲层。此后，在缓冲层上形成非晶硅层。最后，进行激光退火处理，使得非晶硅层从沟槽的上部开始熔化并结晶成多晶硅层。本发明可以用于制造低温多晶硅薄膜晶体管液晶显示器的多晶硅层，使得多晶硅层内部的晶体均匀分布并具有较大的平均尺寸。

10. 发明申请

US20050002016A1 Inspection method and apparatus of laser crystallized silicons 有权
标题翻译：激光结晶硅的检测方法和装置
公开(公告)号：US20050002016A1
公开(公告)日：2005-01-06
申请号：US10792833
申请日：2004-03-05
申请人： I-Chang Tsao
发明人： I-Chang Tsao
IPC分类号： G02F1/13 , G01N21/95 , H01L21/20 , H01L21/268 , H01L21/26
CPC分类号： H01L21/02686 , G01N21/95 , H01L21/02691 , H01L21/2026 , H01L21/268
摘要： An inspection method and apparatus of laser crystallized silicons in the low-temperature poly Si (LTPS) process. The crystalline quality is inspected by using a visible light source to irradiate the surface of the poly Si and examining the variations of the reflected light caused by the protrusion arrangement at the surface of the poly Si. This method can be adopted on the poly Si samples prepared by the line scanning of the excimer laser annealing (ELA) technology.
摘要翻译：在低温多晶硅（LTPS）工艺中的激光结晶硅的检查方法和装置。通过使用可见光源照射多晶硅的表面并检查由多晶硅的表面处的突起布置引起的反射光的变化来检查晶体质量。该方法可用于通过准分子激光退火（ELA）技术的线扫描制备的多晶Si样品。

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