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1. 发明申请

US20070052004A1 Method of manufacturing nano crystals and application of the same 审中-公开
标题翻译：制造纳米晶体的方法及其应用
公开(公告)号：US20070052004A1
公开(公告)日：2007-03-08
申请号：US11320061
申请日：2005-12-28
申请人： Chih-Wei Chao , Mao-Yi Chang , I-Chang Tsao
发明人： Chih-Wei Chao , Mao-Yi Chang , I-Chang Tsao
IPC分类号： H01L29/788
CPC分类号： H01L29/42332 , B82Y10/00 , H01L29/40114 , H01L31/0352 , H01L31/068 , Y02E10/547
摘要： A method of manufacturing nano crystals disclosed herein is applicable to the fabrications of memory device and solar cell. The method of manufacturing nano crystals at least comprises steps of: providing a substrate with a thin film formed thereon, and transforming the thin film into the nano crystals by laser annealing, wherein a thickness of the thin film is equal to or less than about 50 Å, and a wavelength of the laser selected for laser annealing is equal to or less than about 500 nm.
摘要翻译：本文公开的制造纳米晶体的方法适用于存储器件和太阳能电池的制造。制造纳米晶体的方法至少包括以下步骤：为基板提供形成在其上的薄膜，并通过激光退火将薄膜转变成纳米晶体，其中薄膜的厚度等于或小于约50 并且激光退火选择的激光的波长等于或小于约500nm。

2. 发明申请

US20090127554A1 Semiconductor structure having multilayer of polysilicon and display panel applied with the same 有权
标题翻译：具有多晶硅和显示面板的多层结构的半导体结构
公开(公告)号：US20090127554A1
公开(公告)日：2009-05-21
申请号：US12314355
申请日：2008-12-09
申请人： Chih-Wei Chao , Mao-Yi Chang
发明人： Chih-Wei Chao , Mao-Yi Chang
IPC分类号： H01L29/04
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/1281 , H01L27/1296 , H01L29/04
摘要： A semiconductor structure includes a substrate, a first polysilicon (polysilicon) region, a second polysilicon region, an insulating layer and a third polysilicon region. The first and second polysilicon regions are formed on the substrate and spaced apart by a gap. The insulating layer formed on the substrate covers the first and second polysilicon regions. The third polysilicon region is formed on the insulating layer and disposed above the gap. When the semiconductor structure is applied to a display panel, a grain boundary of the third polysilicon region in a displaying region and a channel of an active layer intersect at an angle, and the grain boundary of the third polysilicon region in a circuit driving region is substantially parallel to the channel of the active layer.
摘要翻译：半导体结构包括基板，第一多晶硅（多晶硅）区域，第二多晶硅区域，绝缘层和第三多晶硅区域。第一和第二多晶硅区域形成在基板上并且间隔开间隙。形成在基板上的绝缘层覆盖第一和第二多晶硅区域。第三多晶硅区域形成在绝缘层上并设置在间隙之上。当将半导体结构施加到显示面板时，显示区域中的第三多晶硅区域的晶界和有源层的沟道以一定角度相交，并且电路驱动区域中的第三多晶硅区域的晶界为基本上平行于有源层的沟道。

3. 发明授权

US08314898B2 Display device having heating layer and method of making the same 有权
标题翻译：具有加热层的显示装置及其制造方法
公开(公告)号：US08314898B2
公开(公告)日：2012-11-20
申请号：US13050950
申请日：2011-03-18
申请人： Mao-Yi Chang , Chia-Tien Peng , Chih-Wei Chao , Chien-Sen Weng , Chao-Shun Liao
发明人： Mao-Yi Chang , Chia-Tien Peng , Chih-Wei Chao , Chien-Sen Weng , Chao-Shun Liao
IPC分类号： G02F1/137
CPC分类号： G02F1/13452 , G02F1/133382
摘要： A display device includes a first substrate, a heating layer formed on the first substrate, an insulating layer having a first opening formed on the heating layer, at least one switching device, two contact pads formed on the insulating layer, and respectively electrically connected to the scan line and the data line, a capacitor, a passivation layer covering the switching device and the capacitor, and a pixel electrode formed on the passivation layer and electrically connected to the drain of the switching device. The source of the switching device is connected to the data line. The passivation layer has a plurality of second openings exposing the contact pads.
摘要翻译：显示装置包括第一基板，形成在第一基板上的加热层，形成在加热层上的第一开口的绝缘层，至少一个开关装置，形成在绝缘层上的两个接触焊盘，分别电连接到扫描线和数据线，电容器，覆盖开关器件和电容器的钝化层，以及形成在钝化层上并电连接到开关器件的漏极的像素电极。开关器件的源极连接到数据线。钝化层具有暴露接触焊盘的多个第二开口。

4. 发明授权

US07994511B2 Semiconductor structure having multilayer of polysilicon and display panel applied with the same 有权
标题翻译：具有多晶硅和显示面板的多层结构的半导体结构
公开(公告)号：US07994511B2
公开(公告)日：2011-08-09
申请号：US12314355
申请日：2008-12-09
申请人： Chih-Wei Chao , Mao-Yi Chang
发明人： Chih-Wei Chao , Mao-Yi Chang
IPC分类号： H01L27/10 , H01L29/16
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/1281 , H01L27/1296 , H01L29/04
摘要： A semiconductor structure includes a substrate, a first polysilicon (polysilicon) region, a second polysilicon region, an insulating layer and a third polysilicon region. The first and second polysilicon regions are formed on the substrate and spaced apart by a gap. The insulating layer formed on the substrate covers the first and second polysilicon regions. The third polysilicon region is formed on the insulating layer and disposed above the gap. When the semiconductor structure is applied to a display panel, a grain boundary of the third polysilicon region in a displaying region and a channel of an active layer intersect at an angle, and the grain boundary of the third polysilicon region in a circuit driving region is substantially parallel to the channel of the active layer.
摘要翻译：半导体结构包括基板，第一多晶硅（多晶硅）区域，第二多晶硅区域，绝缘层和第三多晶硅区域。第一和第二多晶硅区域形成在基板上并且间隔开间隙。形成在基板上的绝缘层覆盖第一和第二多晶硅区域。第三多晶硅区域形成在绝缘层上并设置在间隙之上。当将半导体结构施加到显示面板时，显示区域中的第三多晶硅区域的晶界和有源层的沟道以一定角度相交，并且电路驱动区域中的第三多晶硅区域的晶界为基本上平行于有源层的沟道。

5. 发明授权

US07932987B2 Liquid crystal display having heating layer and method of making the same 有权
标题翻译：具有加热层的液晶显示器及其制造方法
公开(公告)号：US07932987B2
公开(公告)日：2011-04-26
申请号：US12748471
申请日：2010-03-29
申请人： Mao-Yi Chang , Chia-Tien Peng , Chih-Wei Chao , Chien-Sen Weng , Chao-Shun Liao
发明人： Mao-Yi Chang , Chia-Tien Peng , Chih-Wei Chao , Chien-Sen Weng , Chao-Shun Liao
IPC分类号： G02F1/1333 , G02F1/1345 , G02F1/1343
CPC分类号： G02F1/13452 , G02F1/133382
摘要： An LCD includes a first substrate, a heating layer formed on the first substrate, an insulating layer having a first opening formed on the heating layer, at least one switching device, two contact pads formed on the insulating layer, and respectively electrically connected to the scan line and the data line, a capacitor, a bridge electrode formed in the first opening, a passivation layer covering the switching device and the capacitor, a pixel electrode formed on the passivation layer and electrically connected to the drain of the switching device, a second substrate having a common electrode disposed on the first substrate, and a liquid crystal layer. The source of the switching device is connected to the data line. The passivation layer has a plurality of second openings respectively exposing the contact pads and the bridge electrode, wherein the bridge electrode is electrically disconnected from the contact pads.
摘要翻译： LCD包括第一基板，形成在第一基板上的加热层，形成在加热层上的第一开口的绝缘层，至少一个开关装置，形成在绝缘层上的两个接触焊盘，并分别电连接到扫描线和数据线，电容器，形成在第一开口中的桥电极，覆盖开关器件和电容器的钝化层，形成在钝化层上并电连接到开关器件的漏极的像素电极，具有设置在第一基板上的公共电极的第二基板和液晶层。开关器件的源极连接到数据线。钝化层具有分别暴露接触焊盘和桥接电极的多个第二开口，其中桥接电极与接触焊盘电断开。

6. 发明授权

US07476601B2 Semiconductor structure having multilayer of polysilicon and display panel applied with the same 有权
公开(公告)号：US07476601B2
公开(公告)日：2009-01-13
申请号：US11202178
申请日：2005-08-12
申请人： Chih-Wei Chao , Mao-Yi Chang
发明人： Chih-Wei Chao , Mao-Yi Chang
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/1281 , H01L27/1296 , H01L29/04
摘要： A semiconductor structure includes a substrate, a first polysilicon (polysilicon) region, a second polysilicon region, an insulating layer and a third polysilicon region. The first and second polysilicon regions are formed on the substrate and spaced apart by a gap. The insulating layer formed on the substrate covers the first and second polysilicon regions. The third polysilicon region is formed on the insulating layer and disposed above the gap. When the semiconductor structure is applied to a display panel, a grain boundary of the third polysilicon region in a displaying region and a channel of an active layer intersect at an angle, and the grain boundary of the third polysilicon region in a circuit driving region is substantially parallel to the channel of the active layer.

7. 发明授权

US07755738B2 Liquid crystal display having heating layer 有权
标题翻译：具有加热层的液晶显示器
公开(公告)号：US07755738B2
公开(公告)日：2010-07-13
申请号：US11840219
申请日：2007-08-17
申请人： Mao-Yi Chang , Chia-Tien Peng , Chih-Wei Chao , Chien-Sen Weng , Chao-Shun Liao
发明人： Mao-Yi Chang , Chia-Tien Peng , Chih-Wei Chao , Chien-Sen Weng , Chao-Shun Liao
IPC分类号： G02F1/1333 , G02F1/1345
CPC分类号： G02F1/13452 , G02F1/133382
摘要： An LCD device has an LCD panel having a peripheral region, a heating layer disposed on the LCD panel, and two first flexible printed circuits (FPCs) electrically connected to the heating layer, and adapted to transmit voltage to the heating layer so that the heating layer can generate heat. At least one of the FPCs has a wide portion and a narrow portion being fixed in the peripheral region of the LCD panel and being connected to the heating layer.
摘要翻译： LCD装置具有具有周边区域的LCD面板，设置在LCD面板上的加热层，以及电连接到加热层的两个第一柔性印刷电路（FPC），并且适于将电压传递到加热层，使得加热层可以产生热量。 FPC中的至少一个具有宽的部分，并且窄的部分固定在LCD面板的周边区域中并连接到加热层。

8. 发明申请

US20100182559A1 LIQUID CRYSTAL DISPLAY HAVING HEATING LAYER AND METHOD OF MAKING THE SAME 有权
标题翻译：具有加热层的液晶显示器及其制造方法
公开(公告)号：US20100182559A1
公开(公告)日：2010-07-22
申请号：US12748471
申请日：2010-03-29
申请人： Mao-Yi Chang , Chia-Tien Peng , Chih-Wei Chao , Chien-Sen Weng , Chao-Shun Liao
发明人： Mao-Yi Chang , Chia-Tien Peng , Chih-Wei Chao , Chien-Sen Weng , Chao-Shun Liao
IPC分类号： G02F1/1343 , G02F1/13 , G02F1/1333
CPC分类号： G02F1/13452 , G02F1/133382
摘要： An LCD includes a first substrate, a heating layer formed on the first substrate, an insulating layer having a first opening formed on the heating layer, at least one switching device, two contact pads formed on the insulating layer, and respectively electrically connected to the scan line and the data line, a capacitor, a bridge electrode formed in the first opening, a passivation layer covering the switching device and the capacitor, a pixel electrode formed on the passivation layer and electrically connected to the drain of the switching device, a second substrate having a common electrode disposed on the first substrate, and a liquid crystal layer. The source of the switching device is connected to the data line. The passivation layer has a plurality of second openings respectively exposing the contact pads and the bridge electrode, wherein the bridge electrode is electrically disconnected from the contact pads.
摘要翻译： LCD包括第一基板，形成在第一基板上的加热层，形成在加热层上的第一开口的绝缘层，至少一个开关装置，形成在绝缘层上的两个接触焊盘，并分别电连接到扫描线和数据线，电容器，形成在第一开口中的桥电极，覆盖开关器件和电容器的钝化层，形成在钝化层上并电连接到开关器件的漏极的像素电极，具有设置在第一基板上的公共电极的第二基板和液晶层。开关器件的源极连接到数据线。钝化层具有分别暴露接触焊盘和桥接电极的多个第二开口，其中桥接电极与接触焊盘电断开。

9. 发明申请

US20080316416A1 LIQUID CRYSTAL DISPLAY AND METHOD FOR MAKING THE SAME 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US20080316416A1
公开(公告)日：2008-12-25
申请号：US11840219
申请日：2007-08-17
申请人： Mao-Yi Chang , Chia-Tien Peng , Chih-Wei Chao , Chien-Sen Weng , Chao-Shun Liao
发明人： Mao-Yi Chang , Chia-Tien Peng , Chih-Wei Chao , Chien-Sen Weng , Chao-Shun Liao
IPC分类号： G02F1/1333 , G02F1/13 , G02F1/1343
CPC分类号： G02F1/13452 , G02F1/133382
摘要： An LCD device has an LCD panel having a peripheral region, a heating layer disposed on the LCD panel, and two first flexible printed circuits (FPCs) electrically connected to the heating layer, and adapted to transmit voltage to the heating layer so that the heating layer can generate heat. At least one of the FPCs has a wide portion and a narrow portion being fixed in the peripheral region of the LCD panel and being connected to the heating layer.
摘要翻译：液晶显示装置具有具有周边区域的LCD面板，配置在LCD面板上的加热层，以及电连接到加热层的两个第一柔性印刷电路（FPC），并且适于将电压传递到加热层，使得加热层可以产生热量。 FPC中的至少一个具有宽的部分，并且窄的部分固定在LCD面板的周边区域中并连接到加热层。

10. 发明申请

US20060163733A1 Semiconductor structure having multilayer of polysilicon and display panel applied with the same 有权
公开(公告)号：US20060163733A1
公开(公告)日：2006-07-27
申请号：US11202178
申请日：2005-08-12
申请人： Chih-Wei Chao , Mao-Yi Chang
发明人： Chih-Wei Chao , Mao-Yi Chang
IPC分类号： H01L23/48
CPC分类号： H01L21/02667 , H01L21/02532 , H01L21/02595 , H01L21/2026 , H01L27/1281 , H01L27/1296 , H01L29/04
摘要： A semiconductor structure includes a substrate, a first polysilicon (polysilicon) region, a second polysilicon region, an insulating layer and a third polysilicon region. The first and second polysilicon regions are formed on the substrate and spaced apart by a gap. The insulating layer formed on the substrate covers the first and second polysilicon regions. The third polysilicon region is formed on the insulating layer and disposed above the gap. When the semiconductor structure is applied to a display panel, a grain boundary of the third polysilicon region in a displaying region and a channel of an active layer intersect at an angle, and the grain boundary of the third polysilicon region in a circuit driving region is substantially parallel to the channel of the active layer.

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