会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • pHEMT with barrier optimized for low temperature operation
    • pHEMT具有针对低温操作优化的阻挡层
    • US20060220062A1
    • 2006-10-05
    • US11100095
    • 2005-04-05
    • Bruce GreenOlin HartinEllen LanPhilip LiMonte MillerMatthias PasslackMarcus RayCharles Weitzel
    • Bruce GreenOlin HartinEllen LanPhilip LiMonte MillerMatthias PasslackMarcus RayCharles Weitzel
    • H01L29/739
    • H01L29/7785
    • In one embodiment, a semiconductor device (500) includes a buffer layer (504) formed over a substrate (502). An AlxGa1-xAs layer (506) is formed over the buffer layer (504) and has a first doped region (508) formed therein. An InxGa1-xAs channel layer (512) is formed over the AlxGa1-xAs layer (506). An AlxGa1-xAs layer (518) is formed over the InxGa1-xAs channel layer (512), and the AlxGa1-xAs layer (518) has a second doped region formed therein. A GaAs layer (520) having a first recess is formed over the AlxGa1-xAs layer (518). A control electrode (526) is formed over the AlxGa1-xAs layer (518). A doped GaAs layer (524) is formed over the undoped GaAs layer (520) and on opposite sides of the control electrode (526) and provides first and second current electrodes. When used to amplify a digital modulation signal, the semiconductor device (500) maintains linear operation over a wide temperature range.
    • 在一个实施例中,半导体器件(500)包括形成在衬底(502)上的缓冲层(504)。 在缓冲层(504)之上形成Al x Ga 1-x As层(506),并且在其中形成有第一掺杂区域(508)。 在Al x Ga 1-x 上形成一个In 1 / x Ga 1-x As As沟道层(512) >作为层(506)。 在In 1 x 1 Ga 1-x N上形成Al x Ga 1-x As层(518) 作为沟道层(512)和Al x Ga 1-x As层(518)具有形成在其中的第二掺杂区域。 具有第一凹陷的GaAs层(520)形成在Al 1 Ga 1-x As层(518)上。 控制电极(526)形成在Al 1 Ga 1-x As As层(518)上。 在未掺杂的GaAs层(520)上和控制电极(526)的相对侧上形成掺杂GaAs层(524),并提供第一和第二电流电极。 当用于放大数字调制信号时,半导体器件(500)在宽的温度范围内保持线性操作。
    • 3. 发明申请
    • InGaP pHEMT device for power amplifier operation over wide temperature range
    • InGaP pHEMT器件用于宽温度范围内的功率放大器工作
    • US20050104087A1
    • 2005-05-19
    • US10881162
    • 2004-06-30
    • Ellen LanMonica De BacaBruce GreenMonte MillerCharles Weitzel
    • Ellen LanMonica De BacaBruce GreenMonte MillerCharles Weitzel
    • H01L29/778H03F1/30H01L31/0328H01L29/739
    • H03F1/301H01L29/7785
    • In one embodiment, a semiconductor device (500) includes a buffer layer (504) formed over a substrate (502). An AlxGa1-xAs layer (506) is formed over the buffer layer (504) and has a first doped region (508) formed therein. An InxGa1-xAs channel layer (512) is formed over the AlxGa1-xAs layer (506). An InxGa1-xP barrier layer (518) is formed over the InxGa1-xAs channel layer (512), the InxGa1-xP layer (518) has a second doped region formed therein. A control electrode (526) is formed over the InxGa1-xP layer (518). An undoped GaAs layer (520) is formed over the InxGa1-xP layer (518) adjacent to the control electrode (526). A doped GaAs layer (524) is formed over the undoped GaAs layer (520) and on opposite sides of the control electrode (526) and provides first and second current electrodes. When used to amplify a digital modulation signal, the semiconductor device (500) maintains linear operation over a wide temperature range.
    • 在一个实施例中,半导体器件(500)包括形成在衬底(502)上的缓冲层(504)。 在缓冲层(504)之上形成Al x Ga 1-x As层(506),并且在其中形成有第一掺杂区域(508)。 在Al x Ga 1-x 上形成一个In 1 / x Ga 1-x As As沟道层(512) >作为层(506)。 在In 1 / x Ga 1-x 作为沟道层(512),In 1 / x Ga 1-x P层(518)具有形成在其中的第二掺杂区域。 控制电极(526)形成在In 1 x 1 Ga 1-x P层(518)上。 在与控制电极(526)相邻的In 1 x 1 Ga 1-x P P层(518)上形成未掺杂的GaAs层(520)。 在未掺杂的GaAs层(520)上和控制电极(526)的相对侧上形成掺杂GaAs层(524),并提供第一和第二电流电极。 当用于放大数字调制信号时,半导体器件(500)在宽的温度范围内保持线性操作。