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1. 发明授权

US08437192B2 3D two bit-per-cell NAND flash memory 有权
标题翻译： 3D双比特单元NAND闪存
公开(公告)号：US08437192B2
公开(公告)日：2013-05-07
申请号：US12785291
申请日：2010-05-21
申请人： Hsiang-Lan Lung , Hang-Ting Lue , Yen-Hao Shih , Erh-Kun Lai , Ming-Hsiu Lee , Tien-Yen Wang
发明人： Hsiang-Lan Lung , Hang-Ting Lue , Yen-Hao Shih , Erh-Kun Lai , Ming-Hsiu Lee , Tien-Yen Wang
IPC分类号： G11C16/00 , G11C16/02 , G11C16/04 , G11C5/02 , G11C5/06
CPC分类号： H01L27/11578 , G11C16/0483 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： A 3D memory device includes bottom and top memory cubes having respective arrays of vertical NAND string structures. A common source plane comprising a layer of conductive material is between the top and bottom memory cubes. The source plane is supplied a bias voltage such as ground, and is selectively coupled to an end of the vertical NAND string structures of the bottom and top memory cubes. Memory cells in a particular memory cube are read using current through the particular vertical NAND string between the source plane and a corresponding bit line coupled to another end of the particular vertical NAND string.
摘要翻译： 3D存储器件包括具有垂直NAND串结构的相应阵列的底部和顶部存储立方体。包括导电材料层的共同源平面位于顶部和底部存储立方体之间。源平面被提供诸如地的偏置电压，并且选择性地耦合到底部和顶部存储立方体的垂直NAND串结构的一端。通过源平面与耦合到特定垂直NAND串的另一端的对应位线之间的特定垂直NAND串的电流来读取特定存储器立方体中的存储单元。

2. 发明申请

US20110286283A1 3D TWO-BIT-PER-CELL NAND FLASH MEMORY 有权
标题翻译： 3D双比特单片NAND闪存
公开(公告)号：US20110286283A1
公开(公告)日：2011-11-24
申请号：US12785291
申请日：2010-05-21
申请人： HSIANG-LAN LUNG , Hang-Ting Lue , Yen-Hao Shih , Erh-Kun Lai , Ming Hsiu Lee , Tien-Yen Wang
发明人： HSIANG-LAN LUNG , Hang-Ting Lue , Yen-Hao Shih , Erh-Kun Lai , Ming Hsiu Lee , Tien-Yen Wang
IPC分类号： G11C16/04 , H01L21/336
CPC分类号： H01L27/11578 , G11C16/0483 , H01L27/11582 , H01L29/66833 , H01L29/7926
摘要： A 3D memory device is described which includes bottom and top memory cubes having respective arrays of vertical NAND string structures. A common source plane comprising a layer of conductive material is between the top and bottom memory cubes. The source plane is supplied a bias voltage such as ground, and is selectively coupled to an end of the vertical NAND string structures of the bottom and top memory cubes. Memory cells in a particular memory cube are read using current through the particular vertical NAND string between the source plane and a corresponding bit line coupled to another end of the particular vertical NAND string.
摘要翻译：描述了一种3D存储器件，其包括具有垂直NAND串结构的相应阵列的底部和顶部存储器立方体。包括导电材料层的共同源平面位于顶部和底部存储立方体之间。源平面被提供诸如地的偏置电压，并且选择性地耦合到底部和顶部存储立方体的垂直NAND串结构的一端。通过源平面与耦合到特定垂直NAND串的另一端的对应位线之间的特定垂直NAND串的电流来读取特定存储器立方体中的存储单元。

3. 发明授权

US08426294B2 3D memory array arranged for FN tunneling program and erase 有权
标题翻译： 3D存储阵列用于FN隧道编程和擦除
公开(公告)号：US08426294B2
公开(公告)日：2013-04-23
申请号：US13476964
申请日：2012-05-21
申请人： Hsiang-Lan Lung , Yen-Hao Shih , Erh-Kun Lai , Ming-Hsiu Lee , Hang-Ting Lue
发明人： Hsiang-Lan Lung , Yen-Hao Shih , Erh-Kun Lai , Ming-Hsiu Lee , Hang-Ting Lue
IPC分类号： H01L29/76
CPC分类号： G11C16/0458 , H01L27/0688 , H01L27/10 , H01L27/11578 , H01L27/11582
摘要： A 3D memory device includes an array of semiconductor body pillars and bit line pillars, dielectric charge trapping structures, and a plurality of levels of word line structures arranged orthogonally to the array of semiconductor body pillars and bit line pillars. The semiconductor body pillars have corresponding bit line pillars on opposing first and second sides, providing source and drain terminals. The semiconductor body pillars have first and second channel surfaces on opposing third and fourth sides. Dielectric charge trapping structures overlie the first and second channel surfaces, providing data storage sites on two sides of each semiconductor body pillar in each level of the 3D array. The device can be operated as a 3D AND-decoded flash memory.
摘要翻译： 3D存储器件包括半导体主体柱和位线柱的阵列，介电电荷俘获结构以及与半导体主体柱和位线柱阵列垂直布置的多个字线结构。半导体主体柱在相对的第一和第二侧上具有对应的位线柱，提供源极和漏极端子。半导体主体支柱在相对的第三和第四侧上具有第一和第二通道表面。电介质电荷捕获结构覆盖在第一和第二通道表面上，在3D阵列的每个级别中的每个半导体主体支柱的两侧提供数据存储位置。该设备可以作为3D和解码的闪存操作。

4. 发明授权

US08203187B2 3D memory array arranged for FN tunneling program and erase 有权
标题翻译： 3D存储阵列用于FN隧道编程和擦除
公开(公告)号：US08203187B2
公开(公告)日：2012-06-19
申请号：US12705158
申请日：2010-02-12
申请人： Hsiang-Lan Lung , Yen-Hao Shih , Erh-Kun Lai , Ming Hsiu Lee , Hang-Ting Lue
发明人： Hsiang-Lan Lung , Yen-Hao Shih , Erh-Kun Lai , Ming Hsiu Lee , Hang-Ting Lue
IPC分类号： H01L29/76
CPC分类号： G11C16/0458 , H01L27/0688 , H01L27/10 , H01L27/11578 , H01L27/11582
摘要： A 3D memory device includes an array of semiconductor body pillars and bit line pillars, dielectric charge trapping structures, and a plurality of levels of word line structures arranged orthogonally to the array of semiconductor body pillars and bit line pillars. The semiconductor body pillars have corresponding bit line pillars on opposing first and second sides, providing source and drain terminals. The semiconductor body pillars have first and second channel surfaces on opposing third and fourth sides. Dielectric charge trapping structures overlie the first and second channel surfaces, providing data storage sites on two sides of each semiconductor body pillar in each level of the 3D array. The device can be operated as a 3D AND-decoded flash memory.
摘要翻译： 3D存储器件包括半导体主体柱和位线柱的阵列，介电电荷俘获结构以及与半导体主体柱和位线柱阵列垂直布置的多个字线结构。半导体主体柱在相对的第一和第二侧上具有对应的位线柱，提供源极和漏极端子。半导体主体支柱在相对的第三和第四侧上具有第一和第二通道表面。电介质电荷捕获结构覆盖在第一和第二通道表面上，在3D阵列的每个级别中的每个半导体主体支柱的两侧提供数据存储位置。该设备可以作为3D和解码的闪存操作。

5. 发明申请

US20100265773A1 3D MEMORY ARRAY ARRANGED FOR FN TUNNELING PROGRAM AND ERASE 有权
标题翻译： 3D内存阵列安排FN隧道程序和删除
公开(公告)号：US20100265773A1
公开(公告)日：2010-10-21
申请号：US12705158
申请日：2010-02-12
申请人： HSIANG-LAN LUNG , Yen-Hao Shih , Erh-Kun Lai , Ming Hsiu Lee , Hang-Ting Lue
发明人： HSIANG-LAN LUNG , Yen-Hao Shih , Erh-Kun Lai , Ming Hsiu Lee , Hang-Ting Lue
IPC分类号： G11C16/04 , H01L21/76
CPC分类号： G11C16/0458 , H01L27/0688 , H01L27/10 , H01L27/11578 , H01L27/11582
摘要： A 3D memory device includes an array of semiconductor body pillars and bit line pillars, dielectric charge trapping structures, and a plurality of levels of word line structures arranged orthogonally to the array of semiconductor body pillars and bit line pillars. The semiconductor body pillars have corresponding bit line pillars on opposing first and second sides, providing source and drain terminals. The semiconductor body pillars have first and second channel surfaces on opposing third and fourth sides. Dielectric charge trapping structures overlie the first and second channel surfaces, providing data storage sites on two sides of each semiconductor body pillar in each level of the 3D array. The device can be operated as a 3D AND-decoded flash memory.
摘要翻译： 3D存储器件包括半导体主体柱和位线柱的阵列，介电电荷俘获结构以及与半导体主体柱和位线柱阵列垂直布置的多个字线结构。半导体主体柱在相对的第一和第二侧上具有对应的位线柱，提供源极和漏极端子。半导体主体支柱在相对的第三和第四侧上具有第一和第二通道表面。电介质电荷捕获结构覆盖在第一和第二通道表面上，在3D阵列的每个级别中的每个半导体主体支柱的两侧提供数据存储位置。该设备可以作为3D和解码的闪存操作。

6. 发明申请

US20070037328A1 Method of manufacturing a non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US20070037328A1
公开(公告)日：2007-02-15
申请号：US11203087
申请日：2005-08-15
申请人： Chiahua Ho , Yen-Hao Shih , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
发明人： Chiahua Ho , Yen-Hao Shih , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L27/115 , H01L27/11568
摘要： A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.
摘要翻译：一种制造非易失性半导体存储器件的方法包括在没有附加掩模的情况下形成子栅极。低字线电阻由存储器件的主栅上的金属硅化物层形成。在操作中，向子栅极施加电压形成用作位线的瞬态状态反转层，从而不需要植入来形成位线。

7. 发明申请

US20060205157A1 Non-volatile memory and method for fabricating the same 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US20060205157A1
公开(公告)日：2006-09-14
申请号：US11429070
申请日：2006-05-05
申请人： Erh-Kun Lai , Hang-Ting Lue , Yen-Hao Shih , Chia-Hua Ho
发明人： Erh-Kun Lai , Hang-Ting Lue , Yen-Hao Shih , Chia-Hua Ho
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/42348 , H01L29/66833 , H01L29/7923
摘要： A non-volatile memory is provided. The memory comprises a substrate, a dielectric layer, a conductive layer, an isolation layer, a buried bit line, a tunneling dielectric layer, a charge trapping layer, a barrier dielectric layer and a word line. Wherein, the dielectric layer is disposed on the substrate. The conductive layer is disposed on the dielectric layer. The isolation layer is disposed on the substrate and adjacent to the dielectric layer and the conductive layer. The buried bit line is disposed in the substrate and underneath the isolation layer. The tunneling dielectric layer is disposed on both the substrate and the sidewalls of the conductive layer and the isolation layer. The charge trapping layer is disposed on the tunneling dielectric layer and the barrier dielectric layer is disposed on the charge trapping layer. The word line is disposed on the substrate, crisscrossing with the buried bit line.
摘要翻译：提供非易失性存储器。存储器包括衬底，电介质层，导电层，隔离层，掩埋位线，隧道电介质层，电荷俘获层，势垒介电层和字线。其中介电层设置在基板上。导电层设置在电介质层上。隔离层设置在基板上并且邻近电介质层和导电层。掩埋位线设置在衬底中并在隔离层下方。隧道电介质层设置在导电层和隔离层的基板和侧壁上。电荷捕获层设置在隧道介电层上，势垒介电层设置在电荷俘获层上。字线设置在基板上，与埋入位线交叉。

8. 发明授权

US07067375B1 Non-volatile memory and method for fabricating the same 有权
公开(公告)号：US07067375B1
公开(公告)日：2006-06-27
申请号：US11018507
申请日：2004-12-20
申请人： Erh-Kun Lai , Hang-Ting Lue , Yen-Hao Shih , Chia-Hua Ho
发明人： Erh-Kun Lai , Hang-Ting Lue , Yen-Hao Shih , Chia-Hua Ho
IPC分类号： H01L21/8238 , H01L21/336 , H01L21/3205 , H01L21/4763
CPC分类号： H01L27/11568 , H01L27/115 , H01L29/42348 , H01L29/66833 , H01L29/7923
摘要： A non-volatile memory is provided. The memory comprises a substrate, a dielectric layer, a conductive layer, an isolation layer, a buried bit line, a tunneling dielectric layer, a charge trapping layer, a barrier dielectric layer and a word line. Wherein, the dielectric layer is disposed on the substrate. The conductive layer is disposed on the dielectric layer. The isolation layer is disposed on the substrate and adjacent to the dielectric layer and the conductive layer. The buried bit line is disposed in the substrate and underneath the isolation layer. The tunneling dielectric layer is disposed on both the substrate and the sidewalls of the conductive layer and the isolation layer. The charge trapping layer is disposed on the tunneling dielectric layer and the barrier dielectric layer is disposed on the charge trapping layer. The word line is disposed on the substrate, crisscrossing with the buried bit line.

9. 发明授权

US08846549B2 Method of forming bottom oxide for nitride flash memory 有权
标题翻译：形成氮化物闪存底部氧化物的方法
公开(公告)号：US08846549B2
公开(公告)日：2014-09-30
申请号：US11235786
申请日：2005-09-27
申请人： Yen-Hao Shih , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
发明人： Yen-Hao Shih , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
IPC分类号： H01L21/31 , G11C16/04 , H01L21/28 , H01L29/51
CPC分类号： H01L21/28282 , G11C16/0466 , H01L29/513
摘要： A non-volatile memory device on a semiconductor substrate may include a bottom oxide layer over the substrate, a middle layer of silicon nitride over the bottom oxide layer, and a top oxide layer over the middle layer. The bottom oxide layer may have a hydrogen concentration of up to 5E19 cm−3 and an interface trap density of up to 5E11 cm−2 eV−1. The three-layer structure may be a charge-trapping structure for the memory device, and the memory device may further include a gate over the structure and source and drain regions in the substrate.
摘要翻译：半导体衬底上的非易失性存储器件可以包括衬底上的底部氧化物层，底部氧化物层上的中间氮化硅层和中间层上的顶部氧化物层。底部氧化物层可以具有高达5E19cm-3的氢浓度和高达5E11cm-2eV-1的界面陷阱密度。三层结构可以是用于存储器件的电荷捕获结构，并且存储器件还可以包括在结构上的栅极和衬底中的源极和漏极区域。

10. 发明授权

US07977227B2 Method of manufacturing a non-volatile memory device 有权
标题翻译：制造非易失性存储器件的方法
公开(公告)号：US07977227B2
公开(公告)日：2011-07-12
申请号：US12216679
申请日：2008-07-09
申请人： Chiahua Ho , Yen-Hao Shih , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
发明人： Chiahua Ho , Yen-Hao Shih , Hang-Ting Lue , Erh-Kun Lai , Kuang Yeu Hsieh
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L27/11568 , H01L21/28282 , H01L27/115
摘要： A method of manufacturing a non-volatile semiconductor memory device includes forming a sub-gate without an additional mask. A low word-line resistance is formed by a metal silicide layer on a main gate of the memory device. In operation, application of a voltage to the sub-gate forms a transient state inversion layer that serves as a bit-line, so that no implantation is required to form the bit-line.
摘要翻译：一种制造非易失性半导体存储器件的方法包括在没有附加掩模的情况下形成子栅极。低字线电阻由存储器件的主栅极上的金属硅化物层形成。在操作中，向子栅极施加电压形成用作位线的瞬态状态反转层，从而不需要植入来形成位线。

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