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1. 发明申请

US20060284113A1 Off-axis projection optical system and extreme ultraviolet lithography apparatus using the same 有权
标题翻译：离轴投影光学系统和使用其的极紫外光刻设备
公开(公告)号：US20060284113A1
公开(公告)日：2006-12-21
申请号：US11453775
申请日：2006-06-16
申请人： Seung-Hyuk Chang , I-Hun Song , Young-Soo Park , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Young-Soo Park , Suk-Pil Kim , Hoon Kim
IPC分类号： G21G5/00 , A61N5/00
CPC分类号： G03F7/70241 , G03F7/70941
摘要： An off-axis projection optical system including first and second mirrors that are off-axially arranged is provided. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation. R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2
摘要翻译：提供了一种离轴投影光学系统，其包括非轴向布置的第一和第二反射镜。第一反射镜的切向和矢状曲率半径可以分别为R 1t 1和R 1s 1。第二反射镜的切向和矢状曲率半径可以分别为R 2t 2和R 2s 3。从物点到第一反射镜10的光束的入射角度可以为1＆lt; 1＆gt;，从第一反射镜10反射到第二反射镜30的光束的入射角为 2 。 R 1，R 1，R 2，R 2，R 2，R 1，R 2， SUB＆gt;和i＆lt; 2＆gt;可以满足以下等式。 <？in-line-formula description =“In-line Formulas”end =“lead”？> R＆lt; 1t＆gt; cos＆lt; 1＆lt; 1＆lt; 2＆lt; > cos i <2> <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = “引线”→R 1> = R 1t＆lt; 2＆gt;＆lt; 2＆lt;＆lt; =“在线公式”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> R <2> 2t 2 “in-line-formula description =”In-line Formulas“end =”tail“？>

2. 发明申请

US20060134531A1 Mask for electromagnetic radiation and method of fabricating the same 审中-公开
标题翻译：电磁辐射掩模及其制造方法
公开(公告)号：US20060134531A1
公开(公告)日：2006-06-22
申请号：US11274474
申请日：2005-11-16
申请人： I-Hun Song , Won-Il Ryu , Suk-Pil Kim , Hoon Kim , Seung-Hyuk Chang , Won-Joo Kim , Young-Soo Park
发明人： I-Hun Song , Won-Il Ryu , Suk-Pil Kim , Hoon Kim , Seung-Hyuk Chang , Won-Joo Kim , Young-Soo Park
IPC分类号： G03C5/00 , G21K5/00 , G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A mask for lithography and a method of manufacturing the same. The mask may include a substrate, a reflection layer formed of a material capable of reflecting electromagnetic rays on the substrate and an absorption pattern formed in a desired pattern such that absorbing regions with respect to electromagnetic rays and windows through which electromagnetic rays pass are formed, wherein the absorption pattern includes at least one side surface that is adjacent to the window and is inclined with respect to the reflection layer. The method may include forming a reflection layer which is formed of a material capable of reflecting electromagnetic rays on a substrate, forming an absorption layer which is formed of a material capable of absorbing electromagnetic rays on the refection layer, and patterning the absorption layer to form an absorption pattern with at least one side surface adjacent to a window that has an inclined side surface with respect to the reflection layer.
摘要翻译：光刻用掩模及其制造方法。掩模可以包括基板，由能够在基板上反射电磁射线的材料形成的反射层和形成为期望图案的吸收图案，使得形成相对于电磁射线通过的电磁射线和窗口的吸收区域，其中所述吸收图案包括与所述窗口相邻并且相对于所述反射层倾斜的至少一个侧表面。该方法可以包括形成由能够在基板上反射电磁射线的材料形成的反射层，形成由能够在反射层上吸收电磁射线的材料形成的吸收层，以及图案化吸收层以形成具有与窗口相邻的至少一个侧表面的吸收图案，该窗口具有相对于反射层的倾斜侧表面。

3. 发明申请

US20070031741A1 EUVL reflection device, method of fabricating the same, and mask, projection optics system and EUVL apparatus using the EUVL reflection device 审中-公开
标题翻译： EUVL反射装置及其制造方法，掩模，投影光学系统和使用EUVL反射装置的EUVL装置
公开(公告)号：US20070031741A1
公开(公告)日：2007-02-08
申请号：US11498020
申请日：2006-08-03
申请人： Hoon Kim , Suk-pil Kim , I-hun Song , Young-soo Park , Seung-hyuk Chang
发明人： Hoon Kim , Suk-pil Kim , I-hun Song , Young-soo Park , Seung-hyuk Chang
IPC分类号： G02B5/20 , F21V9/06 , F21V9/04 , G21K5/00 , G03F1/00 , G02B5/08
CPC分类号： G03F1/24 , B82Y10/00 , B82Y40/00 , G03F7/70316 , G03F7/70958 , G21K1/062
摘要： A reflection device that may include a substrate and a multi-reflection layer formed on the substrate. The multi-reflection layer may be formed of a material capable of reflecting EUV rays. The multi-reflection layer may be formed by stacking a plurality of layer groups, each including a first material layer, a surface-treated layer obtained by surface-treating the first material layer, and a second material layer formed on the surface-treated layer. A method of fabricating the reflection device that may include preparing a substrate and forming a multi-reflection layer on the substrate from a material capable of reflecting EUV rays. The forming of the multi-reflection layer may be performed by repeatedly forming a layer group. The forming of the layer group may include forming a first material layer, surface-treating the first material layer, and forming a second material layer on the surface-treated first material layer.
摘要翻译：可以包括形成在基板上的基板和多反射层的反射装置。多反射层可以由能够反射EUV射线的材料形成。多反射层可以通过层叠多个层组而形成，每个层组包括第一材料层，通过表面处理第一材料层获得的表面处理层和形成在表面处理层上的第二材料层。一种制造反射装置的方法，其可以包括准备基板并且在能够反射EUV射线的材料的基板上形成多反射层。多反射层的形成可以通过重复形成层组来进行。层组的形成可以包括形成第一材料层，对第一材料层进行表面处理，以及在表面处理的第一材料层上形成第二材料层。

4. 发明授权

US07301694B2 Off-axis projection optical system and extreme ultraviolet lithography apparatus using the same 有权
标题翻译：离轴投影光学系统和使用其的极紫外光刻设备
公开(公告)号：US07301694B2
公开(公告)日：2007-11-27
申请号：US11453775
申请日：2006-06-16
申请人： Seung-Hyuk Chang , I-Hun Song , Young-Soo Park , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Young-Soo Park , Suk-Pil Kim , Hoon Kim
IPC分类号： G02B5/08
CPC分类号： G03F7/70241 , G03F7/70941
摘要： Example embodiments are directed to an off-axis projection optical system including first and second mirrors that are off-axially arranged. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2.
摘要翻译：示例性实施例涉及一种离轴投影光学系统，其包括非轴向布置的第一和第二反射镜。第一反射镜的切向和矢状曲率半径可以分别为R 1t 1和R 1s 1。第二反射镜的切向和矢状曲率半径可以分别为R 2t 2和R 2s 3。从物点到第一反射镜10的光束的入射角度可以为1＆lt; 1＆gt;，从第一反射镜10反射到第二反射镜30的光束的入射角为 2 。 R 1，R 1，R 2，R 2，R 2，R 1，R 2， SUB>和i <2>可以满足以下等式<？in-line-formula description =“In-line Formulas”end =“lead”？> R 1t cos α-in-line-formula description =“In-line Formulas”end =“tail”？> R＆lt; 1s＆lt; 1＆lt; 1＆lt; 1＆lt; i <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead “？”R 2s 2 = R 2t 2＆lt; 2＆lt; 2＆lt; 2＆lt;＆lt;行内公式描述= “直线公式”end =“tail”？>

5. 发明申请

US20060281017A1 Reflection mask for EUV photolithography and method of fabricating the reflection mask 有权
标题翻译：用于EUV光刻的反射掩模和制造反射掩模的方法
公开(公告)号：US20060281017A1
公开(公告)日：2006-12-14
申请号：US11441835
申请日：2006-05-26
申请人： Suk-pil Kim , I-hun Song , Young-Soo Park , Seung-hyuk Chang , Hoon Kim
发明人： Suk-pil Kim , I-hun Song , Young-Soo Park , Seung-hyuk Chang , Hoon Kim
IPC分类号： G21K5/00 , G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A reflection mask for extreme ultraviolet (EUV) photolithography and a method of fabricating the same, in which the reflection mask includes a substrate, a lower reflection layer formed in a multi-layer structure on the substrate and including a material reflecting EUV light, an upper reflection layer formed in a multi-layer structure on the lower reflection layer and reflecting EUV light, and a phase reversing layer formed between the lower reflection layer and the upper reflection layer in a certain pattern and causing destructive interference between reflection light from the upper reflection layer and reflection light from the lower reflection layer. An incidence of a shadow effect can be reduced and unnecessary EUV light can be eliminated, so that a pattern on the reflection mask can be projected precisely on a silicon wafer. Since the phase reversing layer includes the same material as the reflection layer and an absorption layer, mask fabrication processes can be handled easily.
摘要翻译：一种用于极紫外（EUV）光刻的反射掩模及其制造方法，其中反射掩模包括基板，在基板上形成为多层结构的下反射层，并且包括反射EUV光的材料，在下反射层上形成多层结构并反射EUV光的上反射层和以一定图案形成在下反射层和上反射层之间的相位反转层，并且产生来自上层的反射光之间的相消干涉反射层和来自下反射层的反射光。可以减少阴影效应的入射，并且可以消除不必要的EUV光，使得反射掩模上的图案可以精确地投影在硅晶片上。由于相位反转层包括与反射层和吸收层相同的材料，因此可以容易地处理掩模制造工艺。

6. 发明授权

US07682758B2 Reflection mask for EUV photolithography and method of fabricating the reflection mask 有权
标题翻译：用于EUV光刻的反射掩模和制造反射掩模的方法
公开(公告)号：US07682758B2
公开(公告)日：2010-03-23
申请号：US11441835
申请日：2006-05-26
申请人： Suk-pil Kim , I-hun Song , Young-soo Park , Seung-hyuk Chang , Hoon Kim
发明人： Suk-pil Kim , I-hun Song , Young-soo Park , Seung-hyuk Chang , Hoon Kim
IPC分类号： G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A reflection mask for extreme ultraviolet (EUV) photolithography and a method of fabricating the same, in which the reflection mask includes a substrate, a lower reflection layer formed in a multi-layer structure on the substrate and including a material reflecting EUV light, an upper reflection layer formed in a multi-layer structure on the lower reflection layer and reflecting EUV light, and a phase reversing layer formed between the lower reflection layer and the upper reflection layer in a certain pattern and causing destructive interference between reflection light from the upper reflection layer and reflection light from the lower reflection layer. An incidence of a shadow effect can be reduced and unnecessary EUV light can be eliminated, so that a pattern on the reflection mask can be projected precisely on a silicon wafer. Since the phase reversing layer includes the same material as the reflection layer and an absorption layer, mask fabrication processes can be handled easily.
摘要翻译：一种用于极紫外（EUV）光刻的反射掩模及其制造方法，其中反射掩模包括基板，在基板上形成为多层结构的下反射层，并且包括反射EUV光的材料，在下反射层上形成多层结构并反射EUV光的上反射层和以一定图案形成在下反射层和上反射层之间的相位反转层，并且产生来自上层的反射光之间的相消干涉反射层和来自下反射层的反射光。可以减少阴影效应的入射，并且可以消除不必要的EUV光，使得反射掩模上的图案可以精确地投影在硅晶片上。由于相位反转层包括与反射层和吸收层相同的材料，因此可以容易地处理掩模制造工艺。

7. 发明授权

US07274513B2 Off-axis projection optics and extreme ultraviolet lithography apparatus employing the same 有权
公开(公告)号：US07274513B2
公开(公告)日：2007-09-25
申请号：US11358074
申请日：2006-02-22
申请人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
IPC分类号： G02B9/00
CPC分类号： G03F7/70233
摘要： Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 ⁢ tan ⁢ ⁢ i 1 = l 2 ′ + l 2 l 2 ⁢ tan ⁢ ⁢ i 2 .

8. 发明授权

US07474468B2 Off-axis projection optics and extreme ultraviolet lithography apparatus employing the same 有权
公开(公告)号：US07474468B2
公开(公告)日：2009-01-06
申请号：US11889511
申请日：2007-08-14
申请人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
IPC分类号： G02B9/00
CPC分类号： G03F7/70233
摘要： Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 ⁢ tan ⁢ ⁢ i 1 = l 2 ′ + l 2 l 2 ⁢ tan ⁢ ⁢ i 2 .

9. 发明申请

US20060188822A1 Off-axis projection optics and extreme ultraviolet lithography apparatus employing the same 有权
公开(公告)号：US20060188822A1
公开(公告)日：2006-08-24
申请号：US11358074
申请日：2006-02-22
申请人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Won-Joo Kim , Suk-Pil Kim , Hoon Kim
IPC分类号： G03C5/00
CPC分类号： G03F7/70233
摘要： Off-axis projection optics that includes first and second mirrors positioned off-axis and sharing a confocal point that are arranged to reduce linear astigmatism. If a distance between an object plane and the first mirror is l1, an incident angle of light coming from the object plane to the first mirror is i1, a distance between the first mirror and the confocal point is l1′, a distance between the confocal point and the second mirror is l2, an incident angle of light coming from the first mirror to the second mirror is i2, and a distance between the second mirror and an image plane is l2′, the off-axis projection optics may satisfy the following equation: l 1 ′ + l 1 l 1 ⁢ tan ⁢ ⁢ i 1 = l 2 ′ + l 2 l 2 ⁢ tan ⁢ ⁢ i 2 .

10. 发明申请

US20060141370A1 Photomasks and methods of manufacturing the same 审中-公开
标题翻译：光掩模及其制造方法
公开(公告)号：US20060141370A1
公开(公告)日：2006-06-29
申请号：US11319725
申请日：2005-12-29
申请人： Suk-Pil Kim , I-Hun Song , Won-Joo Kim , Seung-Hyuk Chang , Hoon Kim
发明人： Suk-Pil Kim , I-Hun Song , Won-Joo Kim , Seung-Hyuk Chang , Hoon Kim
IPC分类号： G21G5/00 , A61N5/00 , G21K5/00 , G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/22 , G03F1/24 , G21K2201/067
摘要： A photomask may include a reflection layer including a material capable of reflecting electromagnetic radiation, and at least one ion region. The ion region may be formed by implanting ions of an absorbent capable of absorbing electromagnetic radiation. The reflection layer may have a stack structure including a plurality of layers. The ions of the dopant may be implanted into at least one of the plurality of layers.
摘要翻译：光掩模可以包括包括能够反射电磁辐射的材料的反射层和至少一个离子区域。可以通过注入能够吸收电磁辐射的吸收剂的离子形成离子区域。反射层可以具有包括多个层的堆叠结构。掺杂剂的离子可以注入到多个层中的至少一个层中。

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