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1. 发明申请

US20120326050A1 Film Bulk Acoustic Wave Resonator-Based High Energy Radiation Detectors and Methods Using the Same 有权
标题翻译：基于薄膜体声波谐振器的高能辐射探测器及其使用方法
公开(公告)号：US20120326050A1
公开(公告)日：2012-12-27
申请号：US13513287
申请日：2011-01-20
申请人： Hongyu Yu , Jonathon Keith Oiler , Hugh James Barnaby
发明人： Hongyu Yu , Jonathon Keith Oiler , Hugh James Barnaby
IPC分类号： G01T1/16
CPC分类号： G01T1/16 , A61N5/1048 , G01N29/036 , G01T1/1606 , G01T1/161 , H01L41/1132 , H03H3/04 , H03H9/174 , H03H2003/023
摘要： The present invention relates generally to the detection of high energy radiation. The present invention relates more particularly to the film bulk acoustic wave resonator-based devices, and their use in the detection of high energy radiation. One aspect of the invention is a method for detecting high energy radiation, the method comprising providing a film bulk acoustic wave resonator having a zinc oxide piezoelectric layer in substantial contact with a dielectric layer; exposing the film bulk acoustic wave resonator to the high energy radiation; determining the resonant frequency of the film bulk acoustic wave resonator; and determining the dose of high energy radiation using the resonant frequency of the film bulk acoustic wave resonator.
摘要翻译：本发明一般涉及高能辐射的检测。本发明更具体地涉及基于薄膜体声波谐振器的装置，以及它们在高能辐射检测中的应用。本发明的一个方面是用于检测高能量辐射的方法，所述方法包括提供具有与电介质层基本接触的氧化锌压电层的薄膜体声波谐振器; 将薄膜体声波谐振器暴露于高能辐射; 确定薄膜体声波谐振器的谐振频率; 以及使用薄膜体声波谐振器的谐振频率来确定高能辐射的剂量。

2. 发明授权

US08704191B2 Film bulk acoustic wave resonator-based high energy radiation detectors and methods using the same 有权
标题翻译：基于薄膜体声波谐振器的高能辐射探测器及其使用方法
公开(公告)号：US08704191B2
公开(公告)日：2014-04-22
申请号：US13513287
申请日：2011-01-20
申请人： Hongyu Yu , Jonathon Keith Oiler , Hugh James Barnaby
发明人： Hongyu Yu , Jonathon Keith Oiler , Hugh James Barnaby
IPC分类号： G01T1/16 , G01N29/036 , G01T1/161
CPC分类号： G01T1/16 , A61N5/1048 , G01N29/036 , G01T1/1606 , G01T1/161 , H01L41/1132 , H03H3/04 , H03H9/174 , H03H2003/023
摘要： The present invention relates generally to the detection of high energy radiation. The present invention relates more particularly to the film bulk acoustic wave resonator-based devices, and their use in the detection of high energy radiation. One aspect of the invention is a method for detecting high energy radiation, the method comprising providing a film bulk acoustic wave resonator having a zinc oxide piezoelectric layer in substantial contact with a dielectric layer; exposing the film bulk acoustic wave resonator to the high energy radiation; determining the resonant frequency of the film bulk acoustic wave resonator; and determining the dose of high energy radiation using the resonant frequency of the film bulk acoustic wave resonator.
摘要翻译：本发明一般涉及高能辐射的检测。本发明更具体地涉及基于薄膜体声波谐振器的装置，以及它们在高能辐射检测中的应用。本发明的一个方面是用于检测高能量辐射的方法，所述方法包括提供具有与电介质层基本接触的氧化锌压电层的薄膜体声波谐振器; 将薄膜体声波谐振器暴露于高能辐射; 确定薄膜体声波谐振器的谐振频率; 以及使用薄膜体声波谐振器的谐振频率来确定高能辐射的剂量。

3. 发明申请

US20210354298A1 Remotely Operated Pneumatic Manipulator Based On Kinect 有权
公开(公告)号：US20210354298A1
公开(公告)日：2021-11-18
申请号：US16874704
申请日：2020-05-15
申请人： Yuefeng Li , Wenyu Feng , Hongyu Yu
发明人： Yuefeng Li , Wenyu Feng , Hongyu Yu
IPC分类号： B25J9/16 , B25J9/14 , B25J15/10
摘要： The invention disclosure a remotely operated pneumatic manipulator based on Kinect, comprising Kinect sensor, computer, D/A embedded board, PWM piezoelectric pneumatic ratio valve, pneumatic triad, air compressor, artificial muscle, spring and finger joint, wherein the Kinect sensor is provided on one side of the finger joint, a camera module of the Kinect sensor is faced to the finger joint. The pneumatic humanoid manipulator of the invention has basically the same dimensions as human hands, can achieve human-computer interaction and remotely operation, the transmission structure thereof is novel, simple and compact, the fingers thereon are convenient to control and flexible to move, the finger movement range is large for wide application, moreover, the PWM piezoelectric pneumatic ratio valve is with advantages of fast dynamic response, low cost, strong resistance to noise, and high detection accuracy of Kinect sensor.

4. 发明申请

US20060081064A1 MEMS vascular sensor 有权
标题翻译： MEMS血管传感器
公开(公告)号：US20060081064A1
公开(公告)日：2006-04-20
申请号：US11196849
申请日：2005-08-04
申请人： Tzung Hsiai , Gopikrishnan Soundararajan , E. Kim , Hongyu Yu , Mahsa Rouhanizadeh , Tiantian Lin
发明人： Tzung Hsiai , Gopikrishnan Soundararajan , E. Kim , Hongyu Yu , Mahsa Rouhanizadeh , Tiantian Lin
IPC分类号： G01N3/24
CPC分类号： B81C1/00246 , G01N3/24
摘要： A micromachined sensor for measuring vascular parameters, such as fluid shear stress, includes a substrate having a front-side surface, and a backside surface opposite the front-side surface. The sensor includes a diaphragm overlying a cavity etched within the substrate, and a heat sensing element disposed on the front-side surface of the substrate and on top of the cavity and the diaphragm. The heat sensing element is electrically couplable to electrode leads formed on the backside surface of the substrate. The sensor includes an electronic system connected to the backside surface and configured to measure a change in heat convection from the sensing element to surrounding fluid when the sensing element is heated by applying an electric current thereto, and further configured to derive from the change in heat convection vascular parameters such as the shear stress of fluid flowing past the sensing element.
摘要翻译：用于测量诸如流体剪切应力的血管参数的微加工传感器包括具有前侧表面的基底和与前侧表面相对的背侧表面。传感器包括覆盖在衬底内蚀刻的空腔的膜片，以及设置在衬底的前侧表面上并且在空腔和隔膜顶部上的感热元件。热敏元件可电连接到形成在基板的背面上的电极引线。所述传感器包括连接到所述背面的电子系统，并且被配置为当通过向其施加电流来加热所述感测元件时，测量从所述感测元件到周围流体的热对流变化，并进一步被配置为从热变化对流血管参数，例如流过感测元件的流体的剪切应力。

5. 发明申请

US20050285208A1 Metal gate electrode for semiconductor devices 审中-公开
标题翻译：用于半导体器件的金属栅电极
公开(公告)号：US20050285208A1
公开(公告)日：2005-12-29
申请号：US11149975
申请日：2005-06-10
申请人： Chi Ren , Hongyu Yu , Siu Hung Daniel Chan , Ming-Fu Li , Dim-Lee Kwong
发明人： Chi Ren , Hongyu Yu , Siu Hung Daniel Chan , Ming-Fu Li , Dim-Lee Kwong
IPC分类号： H01L21/28 , H01L21/8238 , H01L29/49 , H01L29/76
CPC分类号： H01L29/4966 , H01L21/28088 , H01L21/823842
摘要： A gate electrode for semiconductor devices, the gate electrode comprising a mixture of a metal having a work function of about 4 eV or less and a metal nitride.
摘要翻译：一种用于半导体器件的栅电极，所述栅电极包括功函数为约4eV或更小的金属和金属氮化物的混合物。

6. 发明授权

US10082391B2 Rotational sensors including ionic liquids and methods of making and using the same 有权
公开(公告)号：US10082391B2
公开(公告)日：2018-09-25
申请号：US15292869
申请日：2016-10-13
申请人： Hongyu Yu , Mengbing Liang
发明人： Hongyu Yu , Mengbing Liang
IPC分类号： G01C9/18 , G01B13/18
CPC分类号： G01C9/18 , G01B13/18 , G01C2009/182 , G01D5/16
摘要： Sensors for measuring rotation about an axis are disclosed, along with methods of making and using the same. The sensors can utilize ionic liquids and electrodes that provide a unique electrical signal at each angle of rotation about an axis. The sensors can include a solid structure with a channel that circumnavigates the axis, electrodes disposed within the channel, and an ionic liquid positioned within the channel.

7. 发明申请

US20160291176A1 MICROFABRICATION TECHNOLOGY FOR PRODUCING SENSING CELLS FOR MOLECULAR ELECTRONIC TRANSDUCER BASED SEISMOMETER 审中-公开
标题翻译：用于生产用于分子式电子传感器的地震仪的感应电池的微生物技术
公开(公告)号：US20160291176A1
公开(公告)日：2016-10-06
申请号：US15037449
申请日：2014-11-20
申请人： Hongyu Yu , Hai Huang
发明人： Hongyu Yu , Hai Huang
IPC分类号： G01V1/18 , G01H11/06 , G01P13/00
CPC分类号： G01V1/18 , G01H11/06 , G01P13/00
摘要： The invention relates to microfabrication technology for producing sensing cells, for use, for example, in molecular electronic transducer (MET) based seismometers devices. In some aspects, a method for fabricating a sensing element is provided. The method includes providing a first wafer including a first substrate, a second substrate, and a first insulating layer between therebetween, etching a first fluid throughhole through the first substrate, the first insulating layer, and the second substrate, and coating the first substrate and second substrate with a first and second conductive coating, respectively. The method also includes providing a second wafer including a third substrate, a fourth substrate, and a second insulating layer therebetween, etching a second fluid throughhole through the third substrate, the second insulating layer, and the fourth substrate, and coating the third substrate with a third conductive coating from top and the fourth substrate with a fourth conductive coating from back.
摘要翻译：本发明涉及用于生产感测单元的微细加工技术，其用于例如基于分子电子换能器（MET）的地震仪装置中。在一些方面，提供了一种用于制造感测元件的方法。该方法包括提供包括第一衬底，第二衬底和第二衬底之间的第一绝缘层的第一晶片，通过第一衬底，第一绝缘层和第二衬底蚀刻第一流体通孔，以及涂覆第一衬底和第二基板分别具有第一和第二导电涂层。该方法还包括提供包括第三衬底，第四衬底和第二绝缘层的第二晶片，通过第三衬底，第二绝缘层和第四衬底蚀刻第二流体通孔，并且用第来自顶部和第四基底的第三导电涂层，其后面具有第四导电涂层。

8. 发明申请

US20120215121A1 MEMS VASCULAR SENSOR 审中-公开
标题翻译： MEMS血管传感器
公开(公告)号：US20120215121A1
公开(公告)日：2012-08-23
申请号：US13461716
申请日：2012-05-01
申请人： Tzung K. Hsiai , Gopikrishnan Soundararajan , Eun Sok Kim , Hongyu Yu , Mahsa Rouhanizadeh , Christina Tiantian Lin
发明人： Tzung K. Hsiai , Gopikrishnan Soundararajan , Eun Sok Kim , Hongyu Yu , Mahsa Rouhanizadeh , Christina Tiantian Lin
IPC分类号： A61B5/027
CPC分类号： B81C1/00246 , G01N3/24
摘要： A micromachined sensor for measuring vascular parameters, such as fluid shear stress, includes a substrate having a front-side surface, and a backside surface opposite the front-side surface. The sensor includes a diaphragm overlying a cavity etched within the substrate, and a heat sensing element disposed on the front-side surface of the substrate and on top of the cavity and the diaphragm. The heat sensing element is electrically couplable to electrode leads formed on the backside surface of the substrate. The sensor includes an electronic system connected to the backside surface and configured to measure a change in heat convection from the sensing element to surrounding fluid when the sensing element is heated by applying an electric current thereto, and further configured to derive from the change in heat convection vascular parameters such as the shear stress of fluid flowing past the sensing element.
摘要翻译：用于测量诸如流体剪切应力的血管参数的微加工传感器包括具有前侧表面的基底和与前侧表面相对的背侧表面。传感器包括覆盖在衬底内蚀刻的空腔的膜片，以及设置在衬底的前侧表面上并且在空腔和隔膜顶部上的感热元件。热敏元件可电连接到形成在基板的背面上的电极引线。所述传感器包括连接到所述背面的电子系统，并且被配置为当通过向其施加电流来加热所述感测元件时，测量从所述感测元件到周围流体的热对流变化，并进一步被配置为从热变化对流血管参数，例如流过感测元件的流体的剪切应力。

9. 发明申请

US20110256682A1 Multiple Deposition, Multiple Treatment Dielectric Layer For A Semiconductor Device 审中-公开
标题翻译：用于半导体器件的多沉积，多处理电介质层
公开(公告)号：US20110256682A1
公开(公告)日：2011-10-20
申请号：US12761159
申请日：2010-04-15
申请人： Xiong-Fei Yu , Wei-Yang Lee , Da-Yuan Lee , Kuang-Yuan Hsu , Yuan-Hung Chiu , Hun-Jan Tao , Hongyu Yu , Wu Ling
发明人： Xiong-Fei Yu , Wei-Yang Lee , Da-Yuan Lee , Kuang-Yuan Hsu , Yuan-Hung Chiu , Hun-Jan Tao , Hongyu Yu , Wu Ling
IPC分类号： H01L21/336 , H01L21/28
CPC分类号： H01L29/517 , H01L21/02181 , H01L21/0228 , H01L21/02337 , H01L21/02348 , H01L21/823857 , H01L29/513 , H01L29/66545
摘要： A method is provided for fabricating a semiconductor device. A semiconductor substrate is provided. A first high-k dielectric layer is formed on the semiconductor substrate. A first treatment is performed on the high-k dielectric layer. In an embodiment, the treatment includes a UV radiation in the presence of O2 and/or O3. A second high-k dielectric layer is formed on the treated first high-k dielectric layer. A second treatment is performed on the second high-k dielectric layer. In an embodiment, the high-k dielectric layer forms a gate dielectric layer of a field effect transistor.
摘要翻译：提供了制造半导体器件的方法。提供半导体衬底。在半导体衬底上形成第一高k电介质层。在高k电介质层上进行第一处理。在一个实施方案中，该处理包括在存在O 2和/或O 3的情况下的UV辐射。在被处理的第一高k电介质层上形成第二高k电介质层。对第二高k电介质层进行第二处理。在一个实施例中，高k电介质层形成场效应晶体管的栅介质层。

10. 发明申请

US20080210543A1 MEMS Vascular Sensor 有权
标题翻译： MEMS血管传感器
公开(公告)号：US20080210543A1
公开(公告)日：2008-09-04
申请号：US12041577
申请日：2008-03-03
申请人： Tzung K. Hsiai , Gopkrishnani Soundararajan , E.S. Kim , Hongyu Yu , Mahsa Rouhanizadeh , Tiantian Lin
发明人： Tzung K. Hsiai , Gopkrishnani Soundararajan , E.S. Kim , Hongyu Yu , Mahsa Rouhanizadeh , Tiantian Lin
IPC分类号： C23C14/34
CPC分类号： B81C1/00246 , G01N3/24
摘要： A micromachined sensor for measuring vascular parameters, such as fluid shear stress, includes a substrate having a front-side surface, and a backside surface opposite the front-side surface. The sensor includes a diaphragm overlying a cavity etched within the substrate, and a heat sensing element disposed on the front-side surface of the substrate and on top of the cavity and the diaphragm. The heat sensing element is electrically couplable to electrode leads formed on the backside surface of the substrate. The sensor includes an electronic system connected to the backside surface and configured to measure a change in heat convection from the sensing element to surrounding fluid when the sensing element is heated by applying an electric current thereto, and further configured to derive from the change in heat convection vascular parameters such as the shear stress of fluid flowing past the sensing element.
摘要翻译：用于测量诸如流体剪切应力的血管参数的微加工传感器包括具有前侧表面的基底和与前侧表面相对的背侧表面。传感器包括覆盖在衬底内蚀刻的空腔的膜片，以及设置在衬底的前侧表面上并且在空腔和隔膜顶部上的感热元件。热敏元件可电连接到形成在基板的背面上的电极引线。所述传感器包括连接到所述背面的电子系统，并且被配置为当通过向其施加电流来加热所述感测元件时，测量从所述感测元件到周围流体的热对流变化，并进一步被配置为从热变化对流血管参数，例如流过感测元件的流体的剪切应力。

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