专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06756657B1 Method of preparing a semiconductor having controlled crystal orientation 失效
标题翻译：制备具有受控晶体取向的半导体的方法
公开(公告)号：US06756657B1
公开(公告)日：2004-06-29
申请号：US09238579
申请日：1999-01-28
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
IPC分类号： H01L31036
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02609 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.
摘要翻译：公开了一种半导体器件。半导体器件具有作为有源层区域的晶体硅膜。结晶硅膜具有平行于衬底并具有（111）轴的晶体生长方向的针状或柱状晶体。制备半导体器件的方法包括以下步骤：向非晶硅膜添加催化元素; 并在低温下加热含有催化元素的非晶硅膜以使硅膜结晶。

2. 发明授权

US06730549B1 Semiconductor device and method for its preparation 失效
标题翻译：半导体器件及其制备方法
公开(公告)号：US06730549B1
公开(公告)日：2004-05-04
申请号：US09222185
申请日：1998-12-29
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
IPC分类号： H01L21336
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02609 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.
摘要翻译：公开了一种半导体器件。半导体器件具有作为有源层区域的晶体硅膜。结晶硅膜具有平行于衬底并具有（111）轴的晶体生长方向的针状或柱状晶体。制备半导体器件的方法包括以下步骤：向非晶硅膜添加催化元素; 并在低温下加热含有催化元素的非晶硅膜以使硅膜结晶。

3. 发明授权

US07148094B2 Semiconductor device and method for its preparation 失效
标题翻译：半导体器件及其制备方法
公开(公告)号：US07148094B2
公开(公告)日：2006-12-12
申请号：US10808353
申请日：2004-03-25
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
IPC分类号： H01L21/336 , H01L21/84
CPC分类号： H01L21/02672 , H01L21/02532 , H01L21/02609 , H01L21/02675 , H01L21/2026 , H01L29/78675
摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.
摘要翻译：公开了一种半导体器件。半导体器件具有作为有源层区域的晶体硅膜。结晶硅膜具有平行于衬底并具有（111）轴的晶体生长方向的针状或柱状晶体。制备半导体器件的方法包括以下步骤：向非晶硅膜添加催化元素; 并在低温下加热含有催化元素的非晶硅膜以使硅膜结晶。

4. 发明授权

US5895933A Semiconductor device and method for its preparation 失效
公开(公告)号：US5895933A
公开(公告)日：1999-04-20
申请号：US868050
申请日：1997-06-03
申请人： Hongyong Zhang , Yasuhiko Takemura , Toru Takayama , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
发明人： Hongyong Zhang , Yasuhiko Takemura , Toru Takayama , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
IPC分类号： H01L21/20 , H01L29/786 , H01L21/283
CPC分类号： H01L29/78675 , H01L21/2022 , H01L21/2026
摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.

5. 发明授权

US5882960A Method of preparing a semiconductor having a controlled crystal orientation 失效
标题翻译：制备具有受控晶体取向的半导体的方法
公开(公告)号：US5882960A
公开(公告)日：1999-03-16
申请号：US911912
申请日：1997-08-15
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani , Junichi Takeyama
IPC分类号： H01L21/20 , H01L29/786 , H01L21/324
CPC分类号： H01L21/2026 , H01L29/78675
摘要： A semiconductor device is disclosed. The semiconductor device has a crystalline silicon film as an active layer region. The crystalline silicon film has needle-like or columnar crystals oriented parallel to the substrate and having a crystal growth direction of (111) axis. A method for preparing the semiconductor device comprises steps of adding a catalytic element to an amorphous silicon film; and heating the amorphous silicon film containing the catalytic element at a low temperature to crystallize the silicon film.
摘要翻译：公开了一种半导体器件。半导体器件具有作为有源层区域的晶体硅膜。结晶硅膜具有平行于衬底并具有（111）轴的晶体生长方向的针状或柱状晶体。制备半导体器件的方法包括以下步骤：向非晶硅膜添加催化元素; 并在低温下加热含有催化元素的非晶硅膜以使硅膜结晶。

6. 发明授权

US07943930B2 Semiconductor device forming method 失效
标题翻译：半导体器件形成方法
公开(公告)号：US07943930B2
公开(公告)日：2011-05-17
申请号：US12143035
申请日：2008-06-20
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L29/04
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
摘要翻译：在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。该膜在低于玻璃基板的应变点的温度下结晶。此外，形成栅极绝缘膜和栅电极。杂质通过自对准过程引入。然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。首先，将该催化元件与非晶硅膜的表面接触。将膜在450至650℃加热以产生晶核。将膜进一步在较高温度下加热以生长晶粒。以这种方式，形成具有改善的结晶度的晶体硅膜。

7. 发明授权

US07391051B2 Semiconductor device forming method 失效
标题翻译：半导体器件形成方法
公开(公告)号：US07391051B2
公开(公告)日：2008-06-24
申请号：US11321640
申请日：2005-12-30
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L31/00
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
摘要翻译：在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。该膜在低于玻璃基板的应变点的温度下结晶。此外，形成栅极绝缘膜和栅电极。杂质通过自对准过程引入。然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。首先，将该催化元件与非晶硅膜的表面接触。将膜在450至650℃加热以产生晶核。将膜进一步在较高温度下加热以生长晶粒。以这种方式，形成具有改善的结晶度的晶体硅膜。

8. 发明申请

US20060192202A1 Semiconductor device forming method 失效
公开(公告)号：US20060192202A1
公开(公告)日：2006-08-31
申请号：US11321640
申请日：2005-12-30
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L29/786
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTS) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.

9. 发明授权

US6037610A Transistor and semiconductor device having columnar crystals 失效
公开(公告)号：US6037610A
公开(公告)日：2000-03-14
申请号：US41516
申请日：1998-03-13
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L21/20 , H01L29/786 , H01L29/04
CPC分类号： H01L21/2022 , H01L29/78675
摘要： A semiconductor device having high carrier mobility, which comprises a substrate provided thereon a base film and further thereon a crystalline non-single crystal silicon film by crystal growth, wherein, the crystals are grown along the crystallographic [110] axis, and source/drain regions are provided approximately along the direction of carrier movement which coincides to the direction of crystal growth. Moreover, the electric conductivity along this direction of crystal growth is higher than any in other directions.

10. 发明授权

US06987283B2 Semiconductor device structure 失效
标题翻译：半导体器件结构
公开(公告)号：US06987283B2
公开(公告)日：2006-01-17
申请号：US10180015
申请日：2002-06-27
申请人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
发明人： Hongyong Zhang , Toru Takayama , Yasuhiko Takemura , Akiharu Miyanaga , Hisashi Ohtani
IPC分类号： H01L29/76
CPC分类号： H01L29/045 , G09G2300/0408 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1296 , H01L29/66757
摘要： In thin film transistors (TFTs) having an active layer of crystalline silicon adapted for mass production, a catalytic element is introduced into doped regions of an amorphous silicon film by ion implantation or other means. This film is crystallized at a temperature below the strain point of the glass substrate. Further, a gate insulating film and a gate electrode are formed. Impurities are introduced by a self-aligning process. Then, the laminate is annealed below the strain point of the substrate to activate the dopant impurities. On the other hand, Neckel or other element is also used as a catalytic element for promoting crystallization of an amorphous silicon film. First, this catalytic element is applied in contact with the surface of the amorphous silicon film. The film is heated at 450 to 650° C. to create crystal nuclei. The film is further heated at a higher temperature to grow the crystal grains. In this way, a crystalline silicon film having improved crystallinity is formed.
摘要翻译：在具有适于批量生产的结晶硅有源层的薄膜晶体管（TFT）中，通过离子注入或其它方式将催化元素引入到非晶硅膜的掺杂区域中。该膜在低于玻璃基板的应变点的温度下结晶。此外，形成栅极绝缘膜和栅电极。杂质通过自对准过程引入。然后，层压体在基板的应变点以下退火以活化掺杂剂杂质。另一方面，Neckel或其它元素也用作促进非晶硅膜结晶的催化元素。首先，将该催化元件与非晶硅膜的表面接触。将膜在450至650℃加热以产生晶核。将膜进一步在较高温度下加热以生长晶粒。以这种方式，形成具有改善的结晶度的晶体硅膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式