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1. 发明申请

US20120153287A1 ETCHANT, DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE SAME 有权
标题翻译：蚀刻剂，显示装置和使用其制造显示装置的方法
公开(公告)号：US20120153287A1
公开(公告)日：2012-06-21
申请号：US13168408
申请日：2011-06-24
申请人： Hong-Sick PARK , Wang-Woo LEE , Sang-Tae KIM , Joon-Woo LEE , Young-Chul PARK , Young-Jun JIN , Kyong-Min KANG , Young-Jin YOON , Suck-Jun LEE , O-Byoung KWON , In-Ho YU , Sang-Hoon JANG , Min-Ki LIM , Dong-Ki KIM
发明人： Hong-Sick PARK , Wang-Woo LEE , Sang-Tae KIM , Joon-Woo LEE , Young-Chul PARK , Young-Jun JIN , Kyong-Min KANG , Young-Jin YOON , Suck-Jun LEE , O-Byoung KWON , In-Ho YU , Sang-Hoon JANG , Min-Ki LIM , Dong-Ki KIM
IPC分类号： H01L33/16 , C09K13/08 , C09K13/06
CPC分类号： H01L27/127 , H01L21/32134 , H01L27/124 , H01L27/1259 , H01L29/41733
摘要： An etchant includes: 5 to 20 wt % of persulfate, 1 to 10 wt % of at least one compound of an inorganic acid, an inorganic acid salt, or a mixture thereof, 0.3 to 5 wt % of a cyclic amine compound, 1 to 10 wt % of at least one compound of an organic acid, an organic acid salt, or a mixture thereof, 0.1 to 5 wt % of p-toluenesulfonic acid, and water, based on the total weight of the etchant. A copper-titanium etchant further includes 0.01 to 2 wt % of a fluoride-containing compound. A method of forming a display device using the etchant, and a display device, are also disclosed.
摘要翻译：蚀刻剂包括：5〜20重量％的过硫酸盐，1〜10重量％的至少一种无机酸化合物，无机酸盐或其混合物，0.3〜5重量％的环状胺化合物，1〜 10重量％的至少一种有机酸，有机酸盐或其混合物的化合物，0.1至5重量％的对甲苯磺酸和水，基于蚀刻剂的总重量。另外，铜 - 钛蚀刻剂还含有0.01〜2重量％的含氟化合物。还公开了使用蚀刻剂形成显示装置的方法和显示装置。

2. 发明申请

US20110226727A1 ETCHANT FOR METAL WIRING AND METHOD FOR MANUFACTURING METAL WIRING USING THE SAME 有权
标题翻译：金属接线用金属接头及其制造金属接线方法
公开(公告)号：US20110226727A1
公开(公告)日：2011-09-22
申请号：US13032563
申请日：2011-02-22
申请人： Nam-Seok SUH , Sun-Young HONG , Jong-Hyun CHOUNG , Bong-Kyun KIM , Hong-Sick PARK , Jean-Ho SONG , Wang-Woo LEE , Do-Won KIM , Sang-Woo KIM , Won-Guk SEO , Hyun-Cheol SHIN , Ki-Beom LEE , Sam-Young CHO
发明人： Nam-Seok SUH , Sun-Young HONG , Jong-Hyun CHOUNG , Bong-Kyun KIM , Hong-Sick PARK , Jean-Ho SONG , Wang-Woo LEE , Do-Won KIM , Sang-Woo KIM , Won-Guk SEO , Hyun-Cheol SHIN , Ki-Beom LEE , Sam-Young CHO
IPC分类号： C23F1/18 , H05K3/06 , C23F1/30 , C09K13/00
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/28088 , H01L21/32134 , H01L27/1214 , H01L27/124 , H05K3/067
摘要： Exemplary embodiments of the present invention provide a metal wiring etchant. A metal wiring etchant according to an exemplary embodiment of the present invention includes ammonium persulfate, an organic acid, an ammonium salt, a fluorine-containing compound, a glycol-based compound, and an azole-based compound.
摘要翻译：本发明的示例性实施方案提供金属线路蚀刻剂。根据本发明的示例性实施方式的金属线蚀刻剂包括过硫酸铵，有机酸，铵盐，含氟化合物，二醇类化合物和唑类化合物。

3. 发明申请

US20130015471A1 ETCHANT FOR METAL LAYER INCLUDING COPPER OR A COPPER ALLOY, METHOD OF MANUFACTURING A DISPLAY SUBSTRATE USING THE SAME AND DISPLAY SUBSTRATE 有权
标题翻译：用于包括铜或铜合金的金属层的蚀刻剂，使用其的显示基板的制造方法和显示基板
公开(公告)号：US20130015471A1
公开(公告)日：2013-01-17
申请号：US13438405
申请日：2012-04-03
申请人： Hong-Sick PARK , Wang-Woo Lee
发明人： Hong-Sick PARK , Wang-Woo Lee
IPC分类号： H01L27/15 , C09K13/08 , H01L33/08 , C09K13/06
CPC分类号： C09K13/08 , C23F1/02 , C23F1/18 , H01L21/32134 , H01L27/124
摘要： An etchant includes about 50% by weight to about 70% by weight of phosphoric acid, about 1% by weight to about 5% by weight of nitric acid, about 10% by weight to about 20% by weight of acetic acid, about 0.1% by weight to about 2% by weight of a corrosion inhibition agent including an azole-based compound and a remainder of water.
摘要翻译：蚀刻剂包括约50重量％至约70重量％的磷酸，约1重量％至约5重量％的硝酸，约10重量％至约20重量％的乙酸，约0.1 约2重量％的包含唑类化合物和其余水的腐蚀抑制剂。

4. 发明申请

US20130017636A1 COMPOSITION FOR REMOVING A PHOTORESIST AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE USING THE COMPOSITION 有权
标题翻译：用于去除光电元件的组合物和使用组合物制造薄膜晶体管基板的方法
公开(公告)号：US20130017636A1
公开(公告)日：2013-01-17
申请号：US13439418
申请日：2012-04-04
申请人： Bong-Kyun KIM , Shin-Il CHOI , Hong-Sick PARK , Wang-Woo LEE , Seok-Jun JANG , Byung-Uk KIM , Sun-Joo PARK , Suk-Il YOON , Jong-Hyun JEONG , Soon-Beom HUR
发明人： Bong-Kyun KIM , Shin-Il CHOI , Hong-Sick PARK , Wang-Woo LEE , Seok-Jun JANG , Byung-Uk KIM , Sun-Joo PARK , Suk-Il YOON , Jong-Hyun JEONG , Soon-Beom HUR
IPC分类号： H01L33/08 , G03F7/42
CPC分类号： G03F7/425 , H01L21/31133 , H01L27/1288 , H01L29/66765
摘要： A composition for removing a photoresist, the composition including about 1% by weight to about 10% by weight of tetramethyl ammonium hydroxide (“TMAH”), about 1% by weight to about 10% by weight of an alkanol amine, about 50% by weight to about 70% by weight of a glycol ether compound, about 0.01% by weight to about 1% by weight of a triazole compound, about 20% by weight to about 40% by weight of a polar solvent, and water, each based on a total weight of the composition.
摘要翻译：用于除去光致抗蚀剂的组合物，该组合物包含约1重量％至约10重量％的四甲基氢氧化铵（TMAH），约1重量％至约10重量％的烷醇胺，约50重量％至约70重量％的二醇醚化合物，约0.01重量％至约1重量％的三唑化合物，约20重量％至约40重量％的极性溶剂，以及基于组合物的总重量。

5. 发明申请

US20100144076A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20100144076A1
公开(公告)日：2010-06-10
申请号：US12699764
申请日：2010-02-03
申请人： Hong-Sick PARK
发明人： Hong-Sick PARK
IPC分类号： H01L21/336
CPC分类号： H01L27/12 , H01L27/124 , H01L51/5228
摘要： The present invention provides a thin film transistor array panel including an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer formed on the gate line, a drain electrode and a data line having a source electrode formed on the gate insulating layer wherein the drain electrode faces the source electrode with a gap therebetween, and a pixel electrode connected to the drain electrode. At least one of the gate line, the data line, and the drain electrode includes a first conductive layer made of a conductive oxide and a second conductive layer of Ag that is deposited adjacent to the first conductive layer.
摘要翻译：本发明提供一种薄膜晶体管阵列面板，其包括绝缘基板，形成在绝缘基板上的栅极线，形成在栅极线上的栅极绝缘层，漏极电极和数据线，该栅极绝缘层上形成有栅极绝缘层，其中漏电极面对源电极，其间具有间隙，以及连接到漏电极的像素电极。栅极线，数据线和漏电极中的至少一个包括由导电氧化物制成的第一导电层和与第一导电层相邻沉积的Ag的第二导电层。

6. 发明申请

US20100120209A1 ETCHANT COMPOSITION, AND METHOD OF FABRICATING METAL PATTERN AND THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME 有权
标题翻译：蚀刻组合物，以及使用其制造金属图案和薄膜晶体管阵列板的方法
公开(公告)号：US20100120209A1
公开(公告)日：2010-05-13
申请号：US12432437
申请日：2009-04-29
申请人： Young-Joo CHOI , Bong-Kyun KIM , Byeong-Jin LEE , Jong-Hyun CHOUNG , Sun-Young HONG , Nam-Seok SUH , Hong-Sick PARK , Ky-Sub KIM , Seung-Yong LEE , Joon-Woo LEE , Young-Chul PARK , Young-Jun JIN , Seung-Jae YANG , Hyun-Kyu LEE , Sang-Hoon JANG , Min-Ki LIM
发明人： Young-Joo CHOI , Bong-Kyun KIM , Byeong-Jin LEE , Jong-Hyun CHOUNG , Sun-Young HONG , Nam-Seok SUH , Hong-Sick PARK , Ky-Sub KIM , Seung-Yong LEE , Joon-Woo LEE , Young-Chul PARK , Young-Jun JIN , Seung-Jae YANG , Hyun-Kyu LEE , Sang-Hoon JANG , Min-Ki LIM
IPC分类号： H01L21/336 , C09K13/06 , G03F7/20
CPC分类号： H01L21/32134 , C09K13/06 , C23F1/18 , H01L27/124 , H01L27/1288 , H01L29/66765
摘要： An etchant composition is provided. The etchant composition includes about 40 to about 65 wt % of phosphoric acid, about 2 to about 5 wt % of nitric acid, about 2 to about 20 wt % of acetic acid, about 0.1 to about 2 wt % of a compound containing phosphate, about 0.1 to about 2 wt % of a compound simultaneously containing an amino group and a carboxyl group, and a remaining weight percent of water for the total weight of the composition.
摘要翻译：提供蚀刻剂组合物。蚀刻剂组合物包括约40至约65重量％的磷酸，约2至约5重量％的硝酸，约2至约20重量％的乙酸，约0.1至约2重量％的含磷酸盐的化合物，约0.1至约2重量％的同时含有氨基和羧基的化合物，以及组合物总重量的剩余重量百分数。

7. 发明申请

US20130146902A1 DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US20130146902A1
公开(公告)日：2013-06-13
申请号：US13530743
申请日：2012-06-22
申请人： Yong-Hwan RYU , Shin-Il CHOI , Hong-Sick PARK
发明人： Yong-Hwan RYU , Shin-Il CHOI , Hong-Sick PARK
IPC分类号： H01L33/08
CPC分类号： G02F1/1333 , G02F1/133528 , G02F2001/133545 , G02F2001/133548
摘要： A display substrate includes a metal pattern, a first insulation layer pattern and a second insulation layer pattern. The metal pattern is on a base substrate. The first insulation pattern is on the metal pattern and includes one of a silicon nitride (SiNx) and a silicon oxide (SiOx). The second insulation pattern is on the first insulation pattern and includes a remaining one of the silicon nitride (SiNx) and the silicon oxide (SiOx).
摘要翻译：显示基板包括金属图案，第一绝缘层图案和第二绝缘层图案。金属图案在基底上。第一绝缘图案在金属图案上，并且包括氮化硅（SiNx）和氧化硅（SiO x）之一。第二绝缘图案在第一绝缘图案上，并且包括氮化硅（SiNx）和氧化硅（SiOx）中的剩余部分。

8. 发明申请

US20100151610A1 COMPOSITION FOR PHOTORESIST STRIPPER AND METHOD OF FABRICATING THIN FILM TRANSISTOR ARRAY SUBSTRATE 有权
标题翻译：光电子剥离器的组合物和制造薄膜晶体管阵列基板的方法
公开(公告)号：US20100151610A1
公开(公告)日：2010-06-17
申请号：US12564019
申请日：2009-09-21
申请人： Jong-Hyun CHOUNG , Bong-Kyun KIM , Hong-Sick PARK , Sun-Young HONG , Young-Joo CHOI , Byeong-Jin LEE , Nam-Seok SUH , Byung-Uk KIM , Suk-Il YOON , Jong-Hyun JEONG , Sung-Gun SHIN , Soon-Beom HUH , Se-Hwan JUNG , Doo-Young JANG , Sun-Joo PARK , Oh-Hwan KWEON
发明人： Jong-Hyun CHOUNG , Bong-Kyun KIM , Hong-Sick PARK , Sun-Young HONG , Young-Joo CHOI , Byeong-Jin LEE , Nam-Seok SUH , Byung-Uk KIM , Suk-Il YOON , Jong-Hyun JEONG , Sung-Gun SHIN , Soon-Beom HUH , Se-Hwan JUNG , Doo-Young JANG , Sun-Joo PARK , Oh-Hwan KWEON
IPC分类号： H01L21/30 , G03F7/42
CPC分类号： G03F7/425 , H01L27/124 , H01L27/1288
摘要： A composition for a photoresist stripper and a method of fabricating a thin film transistor array substrate are provided according to one or more embodiments. In one or more embodiments, the composition includes about 5-30 weight % of a chain amine compound, about 0.5-10 weight % of a cyclic amine compound, about 10-80 weight % of a glycol ether compound, about 5-30 weight % of distilled water, and about 0.1-5 weight % of a corrosion inhibitor.
摘要翻译：根据一个或多个实施方案提供了用于光致抗蚀剂剥离剂的组合物和制造薄膜晶体管阵列基板的方法。在一个或多个实施方案中，组合物包含约5-30重量％的链胺化合物，约0.5-10重量％的环胺化合物，约10-80重量％的二醇醚化合物，约5-30重量％％的蒸馏水和约0.1-5重量％的腐蚀抑制剂。

9. 发明申请

US20080188042A1 METHOD OF MANUFACTURING THIN FILM TRANSISTOR PANEL 审中-公开
标题翻译：制造薄膜晶体管面板的方法
公开(公告)号：US20080188042A1
公开(公告)日：2008-08-07
申请号：US11777769
申请日：2007-07-13
申请人： Byeong-Jin LEE , Sang-Gab KIM , Hong-Sick PARK
发明人： Byeong-Jin LEE , Sang-Gab KIM , Hong-Sick PARK
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L27/124 , H01L29/458 , H01L29/4908
摘要： Provided is a method of manufacturing a thin film transistor panel that may reduce manufacturing costs. The method includes forming gate wires including a gate line and a gate electrode on an insulating substrate and forming data wires including source and drain electrodes, the data wires being insulated from the gate wires. The method further includes forming a passivation layer covering the gate and data wires, forming contact holes exposing the drain electrodes by etching the passivation layer, and forming a pixel electrode by depositing an indium-free transparent conductive film on the exposed drain electrode and the passivation layer and then dry etching the transparent conductive film.
摘要翻译：提供了可以降低制造成本的薄膜晶体管面板的制造方法。该方法包括在绝缘衬底上形成包括栅极线和栅电极的栅极线，并形成包括源极和漏极的数据线，数据线与栅极线绝缘。该方法还包括形成覆盖栅极和数据线的钝化层，形成通过蚀刻钝化层而暴露出漏电极的接触孔，以及通过在暴露的漏电极和钝化层上沉积无铟透明导电膜来形成像素电极然后干燥蚀刻透明导电膜。

10. 发明申请

US20080096333A1 METHOD OF MANUFACTURING A THIN FILM TRANSISTOR SUBSTRATE AND STRIPPING COMPOSITION 有权
标题翻译：制造薄膜晶体管基板和剥离组合物的方法
公开(公告)号：US20080096333A1
公开(公告)日：2008-04-24
申请号：US11875028
申请日：2007-10-19
申请人： Hong-Sick PARK , Shi-Yul KIM , Jong-Hyun CHOUNG , Won-Suk SHIN
发明人： Hong-Sick PARK , Shi-Yul KIM , Jong-Hyun CHOUNG , Won-Suk SHIN
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , G02F1/134336 , G02F1/1362 , G02F1/1368 , G03F7/425 , H01L27/1214 , H01L27/124
摘要： A method of manufacturing a thin film transistor substrate includes forming a transistor thin layer pattern, forming a protecting layer, forming a photoresist film, forming a pixel electrode and a conductive layer that are separated from each other, stripping a photoresist pattern to remove the conductive layer using a stripping composition and dissolving the conductive layer. The method of manufacturing a thin film transistor substrate is capable of improving an efficiency of manufacturing process of the thin film transistor substrate. In addition, the stripping composition is recycled.
摘要翻译：制造薄膜晶体管基板的方法包括形成晶体管薄层图案，形成保护层，形成光致抗蚀剂膜，形成彼此分离的像素电极和导电层，剥离光致抗蚀剂图案以除去导电使用剥离组合物并溶解导电层。制造薄膜晶体管基板的方法能够提高薄膜晶体管基板的制造工艺的效率。此外，汽提组合物被再循环。

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