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1. 发明授权

US5790584A Highly repetitive laser employing a rotating wedge 失效
标题翻译：使用旋转楔的高度重复的激光
公开(公告)号：US5790584A
公开(公告)日：1998-08-04
申请号：US673679
申请日：1996-06-25
申请人： Hong-Jin Kong , Hyun-Su Kim , Yun-Sup Shin
发明人： Hong-Jin Kong , Hyun-Su Kim , Yun-Sup Shin
IPC分类号： H01S3/00 , H01S3/04 , H01S3/10 , H01S3/08
CPC分类号： H01S3/10076 , H01S3/005 , H01S3/0401
摘要： The present invention relates to a highly repetitive laser employing a rotating wedge, and more specifically, a laser employing a rotating wedge which can provide a laser beam having a uniform spatial intensity profile with a high repetition rate. The highly repetitive laser of the invention is characterized by positioning a rotating wedge between a main resonator and a focusing lens to change the point in which a laser beam emitted from the main resonator is focused, in a laser which comprises a main resonator consisting of a laser medium, a passive Q-switching material and partially reflective mirrors and an auxiliary resonator consisting of a focusing lens and a cell. The present invention can improve the efficiency of high-power conventional lasers; and, therefore, it can be applied in advanced experiments such as second harmonic generation and amorphous silicon annealing and in the precision industry which requires a highly repetitive laser, since it can provide a laser beam having a uniform pattern and high directional properties.
摘要翻译：本发明涉及一种使用旋转楔的高度重复的激光，更具体地，涉及一种采用旋转楔的激光，其可以提供具有高重复率的均匀空间强度分布的激光束。本发明的高度重复的激光器的特征在于，在主谐振器和聚焦透镜之间定位旋转楔，以改变从主谐振器发射的激光束聚焦的点，激光器包括主谐振器，该主谐振器由激光介质，无源Q开关材料和部分反射镜以及由聚焦透镜和单元组成的辅助谐振器。本发明可以提高大功率常规激光器的效率; 因此，可以应用于二次谐波生成和非晶硅退火等高精度工业以及需要高度重复激光的精密工业中，因为能够提供具有均匀图案和高方向性的激光束。

2. 发明授权

US08135345B2 Method and apparatus for identifying JAVA PUSH request equipments using bluetooth in a mobile communication terminal 有权
标题翻译：用于在移动通信终端中使用蓝牙识别JAVA PUSH请求设备的方法和装置
公开(公告)号：US08135345B2
公开(公告)日：2012-03-13
申请号：US12276789
申请日：2008-11-24
申请人： Sung-Chan Lee , Jae-Min Lee , Hyun-Su Kim , Young-Soo Yun , Soo-Hyeon Lee , Ji-Hyun Kim
发明人： Sung-Chan Lee , Jae-Min Lee , Hyun-Su Kim , Young-Soo Yun , Soo-Hyeon Lee , Ji-Hyun Kim
IPC分类号： H04B7/00
CPC分类号： H04L67/16 , H04L67/04 , H04L67/26
摘要： Provided are an identifying method and an apparatus for identifying a plurality of JAVA™ PUSH request terminals using Bluetooth® communication in a mobile communication terminal. According to the method, acquiring information records for performing JAVA™ PUSH about a plurality of terminals by requesting a service search through a Logical Link Control and Adaption Protocol (L2CAP) connection between the mobile communication terminal and the plurality of JAVA™ PUSH request terminals and displaying unique identification information of the plurality of JAVA™ PUSH request terminals by checking the information records of the plurality of JAVA™ PUSH request terminals.
摘要翻译：提供了一种用于在移动通信终端中使用蓝牙通信识别多个JAVA TM PUSH请求终端的识别方法和装置。根据该方法，通过在移动通信终端与多个JAVA TM PUSH请求终端之间的逻辑链路控制和适应协议（L2CAP）连接请求服务搜索来获取关于多个终端的用于执行JAVA TM PUSH的信息记录，以及通过检查多个JAVA TM PUSH请求终端的信息记录来显示多个JAVA TM PUSH请求终端的唯一标识信息。

3. 发明申请

US20080211038A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080211038A1
公开(公告)日：2008-09-04
申请号：US11965420
申请日：2007-12-27
申请人： Jong-Ho Yun , Gil-Heyun Choi , Byung-Hee Kim , Hyun-Su Kim , Eun-Ok Lee
发明人： Jong-Ho Yun , Gil-Heyun Choi , Byung-Hee Kim , Hyun-Su Kim , Eun-Ok Lee
IPC分类号： H01L29/78 , H01L21/3205
CPC分类号： H01L21/28097 , H01L29/4975 , H01L29/66545
摘要： A method of fabricating a semiconductor device includes forming a preliminary gate pattern on a semiconductor substrate. The preliminary gate pattern includes a gate oxide pattern, a conductive pattern, and a sacrificial insulating pattern. The method further includes forming spacers on opposite sidewalls of the preliminary gate pattern, forming an interlayer dielectric pattern to expose the sacrificial insulating pattern, removing the sacrificial insulating pattern to form an opening to expose the conductive pattern, transforming the conductive pattern into a metal silicide layer and forming a metal barrier pattern along an inner profile of the opening and a metal conductive pattern to fill the opening including the metal barrier pattern. The metal silicide layer and the metal conductive pattern constitute a gate electrode.
摘要翻译：制造半导体器件的方法包括在半导体衬底上形成初步栅极图案。初步栅极图案包括栅极氧化物图案，导电图案和牺牲绝缘图案。该方法还包括在初步栅极图案的相对侧壁上形成间隔物，形成层间电介质图案以暴露牺牲绝缘图案，去除牺牲绝缘图案以形成露出导电图案的开口，将导电图案转变为金属硅化物并且沿着开口的内部轮廓形成金属阻挡图案和金属导电图案以填充包括金属阻挡图案的开口。金属硅化物层和金属导电图案构成栅电极。

4. 发明授权

US07416968B2 Methods of forming field effect transistors having metal silicide gate electrodes 有权
标题翻译：形成具有金属硅化物栅电极的场效应晶体管的方法
公开(公告)号：US07416968B2
公开(公告)日：2008-08-26
申请号：US11230586
申请日：2005-09-20
申请人： Hyun-Su Kim , Jong-Ho Yun , Byung-Hak Lee , Eun-Ji Jung , Gil-Heyun Choi
发明人： Hyun-Su Kim , Jong-Ho Yun , Byung-Hak Lee , Eun-Ji Jung , Gil-Heyun Choi
IPC分类号： H01L21/336 , H01L21/3205
CPC分类号： H01L21/28097 , H01L21/823835 , H01L29/4975 , H01L29/665 , H01L29/66545
摘要： Methods of forming field effect transistors according to embodiments of the invention include forming a conductive gate electrode (e.g., polysilicon gate electrode) on a semiconductor substrate and forming a first metal layer on the conductive gate electrode. This first metal layer may include a material selected from a group consisting of nickel, cobalt, titanium, tantalum and tungsten. The first metal layer and the conductive gate electrode are thermally treated for a sufficient duration to convert a first portion of the conductive gate electrode into a first metal silicide region. The first metal layer and the first metal silicide region are then removed to expose a second portion of the conductive gate electrode. A second metal layer is then formed on the second portion of the conductive gate electrode. This second metal layer may include a material selected from a group consisting of nickel, cobalt, titanium, tantalum and tungsten. The second metal layer and the second portion of the conductive gate electrode are thermally treated for a sufficient duration to thereby convert the second portion of the conductive gate electrode into a second metal silicide region.
摘要翻译：根据本发明的实施例的形成场效应晶体管的方法包括在半导体衬底上形成导电栅电极（例如，多晶硅栅电极），并在导电栅电极上形成第一金属层。该第一金属层可以包括选自镍，钴，钛，钽和钨的材料。对第一金属层和导电栅电极进行热处理足够的时间以将导电栅电极的第一部分转换成第一金属硅化物区域。然后去除第一金属层和第一金属硅化物区域以暴露导电栅电极的第二部分。然后在导电栅电极的第二部分上形成第二金属层。该第二金属层可以包括选自镍，钴，钛，钽和钨的材料。第二金属层和导电栅电极的第二部分被热处理足够的持续时间，从而将导电栅电极的第二部分转换成第二金属硅化物区域。

5. 发明申请

US20080199991A1 STACKED SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION 有权
标题翻译：堆叠半导体器件和制造方法
公开(公告)号：US20080199991A1
公开(公告)日：2008-08-21
申请号：US12108591
申请日：2008-04-24
申请人： Hyun-Su Kim , Gil-Heyun Choi , Jong-Ho Yun , Sug-Woo Jung , Eun-Ji Jung
发明人： Hyun-Su Kim , Gil-Heyun Choi , Jong-Ho Yun , Sug-Woo Jung , Eun-Ji Jung
IPC分类号： H01L21/84
CPC分类号： H01L27/0688 , H01L21/8221
摘要： A stacked semiconductor device comprises a lower transistor formed on a semiconductor substrate, a lower interlevel insulation film formed on the semiconductor substrate over the lower transistor, an upper transistor formed on the lower interlayer insulation film over the lower transistor, and an upper interlevel insulation film formed on the lower interlevel insulation film over the upper transistor. The stacked semiconductor device further comprises a contact plug connected between a drain or source region of the lower transistor and a source or drain region of the upper transistor, and an extension layer connected to a lateral face of the source or drain region of the upper transistor to enlarge an area of contact between the source or drain region of the upper transistor and a side of the contact plug.
摘要翻译：叠层半导体器件包括形成在半导体衬底上的下晶体管，形成在半导体衬底上的下层晶体管上的下层间绝缘膜，形成在下晶体管上的下层间绝缘膜上的上晶体管，以及上层间绝缘膜形成在上层晶体管上的较低层间绝缘膜上。叠层半导体器件还包括连接在下晶体管的漏极或源极区域与上部晶体管的源极或漏极区域之间的接触插塞以及连接到上部晶体管的源极或漏极区域的侧面的延伸层以扩大上部晶体管的源极或漏极区域与接触插塞的一侧之间的接触面积。

6. 发明申请

US20080124921A1 METHOD FORMING OHMIC CONTACT LAYER AND METAL WIRING IN SEMICONDUCTOR DEVICE 有权
标题翻译：在半导体器件中形成OHMIC接触层和金属接线的方法
公开(公告)号：US20080124921A1
公开(公告)日：2008-05-29
申请号：US11772953
申请日：2007-07-03
申请人： Dae-Yong Kim , Jong-Ho Yun , Hyun-Su Kim , Eun-Ji Jung , Eun-Ok Lee
发明人： Dae-Yong Kim , Jong-Ho Yun , Hyun-Su Kim , Eun-Ji Jung , Eun-Ok Lee
IPC分类号： H01L21/768
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76855
摘要： A method of forming an ohmic contact layer including forming an insulation layer pattern on a substrate, the insulation pattern layer having an opening selectively exposing a silicon bearing layer, forming a metal layer on the exposed silicon bearing layer using an electrode-less plating process, and forming a metal silicide layer from the silicon bearing layer and the metal layer using a silicidation process. Also, a method of forming metal wiring in a semiconductor device using the foregoing method of forming an ohmic contact layer.
摘要翻译：一种形成欧姆接触层的方法，包括在基板上形成绝缘层图案，所述绝缘图案层具有选择性地暴露含硅层的开口，使用无电极电镀工艺在暴露的硅轴承层上形成金属层，以及使用硅化法从所述硅轴承层和所述金属层形成金属硅化物层。另外，使用上述形成欧姆接触层的方法在半导体器件中形成金属布线的方法。

7. 发明授权

US07285493B2 Methods of forming a metal layer using transition metal precursors 有权
标题翻译：使用过渡金属前体形成金属层的方法
公开(公告)号：US07285493B2
公开(公告)日：2007-10-23
申请号：US10818718
申请日：2004-04-06
申请人： Sang-Bom Kang , Gil-Heyun Choi , Kwang-Jin Moon , Hyun-Su Kim , Seung-Gil Yang
发明人： Sang-Bom Kang , Gil-Heyun Choi , Kwang-Jin Moon , Hyun-Su Kim , Seung-Gil Yang
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76855
摘要： Methods for depositing a metal layer on an integrated circuit device comprising providing a transition metal precursor, carrier gas and hydrogen gas to a deposition chamber such that the partial pressure of the precursor and carrier gas exceeds about 0.25 Torr and the partial pressure of hydrogen gas exceeds about 2.5 Torr are disclosed. Methods of forming a cobalt layer on an integrated circuit device are also disclosed.
摘要翻译：一种用于在集成电路器件上沉积金属层的方法，其包括向沉积室提供过渡金属前体，载气和氢气，使得前体和载气的分压超过约0.25Torr，氢气的分压超过公开了大约2.5托。还公开了在集成电路器件上形成钴层的方法。

8. 发明授权

US07867898B2 Method forming ohmic contact layer and metal wiring in semiconductor device 有权
标题翻译：在半导体器件中形成欧姆接触层和金属布线的方法
公开(公告)号：US07867898B2
公开(公告)日：2011-01-11
申请号：US11772953
申请日：2007-07-03
申请人： Dae-Yong Kim , Jong-Ho Yun , Hyun-Su Kim , Eun-Ji Jung , Eun-Ok Lee
发明人： Dae-Yong Kim , Jong-Ho Yun , Hyun-Su Kim , Eun-Ji Jung , Eun-Ok Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/76843 , H01L21/76855
摘要： A method of forming an ohmic contact layer including forming an insulation layer pattern on a substrate, the insulation pattern layer having an opening selectively exposing a silicon bearing layer, forming a metal layer on the exposed silicon bearing layer using an electrode-less plating process, and forming a metal silicide layer from the silicon bearing layer and the metal layer using a silicidation process. Also, a method of forming metal wiring in a semiconductor device using the foregoing method of forming an ohmic contact layer.
摘要翻译：一种形成欧姆接触层的方法，包括在基板上形成绝缘层图案，所述绝缘图案层具有选择性地暴露含硅层的开口，使用无电极电镀工艺在暴露的硅轴承层上形成金属层，以及使用硅化法从所述硅轴承层和所述金属层形成金属硅化物层。另外，使用上述形成欧姆接触层的方法在半导体器件中形成金属布线的方法。

9. 发明授权

US07846796B2 Semiconductor devices including buried bit lines 有权
标题翻译：半导体器件包括埋地位线
公开(公告)号：US07846796B2
公开(公告)日：2010-12-07
申请号：US12791692
申请日：2010-06-01
申请人： Jong-Ho Yun , Byung-Hee Kim , Dae-Yong Kim , Hyun-Su Kim , Eun-Ji Jung , Eun-Ok Lee
发明人： Jong-Ho Yun , Byung-Hee Kim , Dae-Yong Kim , Hyun-Su Kim , Eun-Ji Jung , Eun-Ok Lee
IPC分类号： H01L21/336 , H01L21/425 , H01L21/44
CPC分类号： H01L27/10885 , H01L27/10876
摘要： A semiconductor device includes a plurality of channel structures on a semiconductor substrate. A bit line groove having opposing sidewalls is defined between sidewalls of adjacent ones of the plurality of channel structures. A plurality of bit lines are formed on corresponding ones of the opposing sidewalls, and the plurality of bit lines are electrically isolated from each other
摘要翻译：半导体器件包括半导体衬底上的多个沟道结构。具有相对侧壁的位线槽限定在多个通道结构中的相邻侧壁之间。多个位线形成在对置的相对的侧壁的相应的一个上，多个位线彼此电隔离

10. 发明授权

US07833847B2 Method of forming semiconductor device having stacked transistors 有权
标题翻译：形成具有堆叠晶体管的半导体器件的方法
公开(公告)号：US07833847B2
公开(公告)日：2010-11-16
申请号：US12503556
申请日：2009-07-15
申请人： Hyun-Su Kim , Gil-Heyun Choi , Jong-Ho Yun , Sug-Woo Jung , Eun-Ji Jung
发明人： Hyun-Su Kim , Gil-Heyun Choi , Jong-Ho Yun , Sug-Woo Jung , Eun-Ji Jung
IPC分类号： H01L21/84 , H01L21/00 , H01L21/44 , H01L21/4763 , H01L21/762
CPC分类号： H01L21/28518 , H01L21/76898 , H01L21/8221 , H01L27/0688 , H01L27/11 , H01L27/1108
摘要： There is provided a method of forming a semiconductor device having stacked transistors. When forming a contact hole for connecting the stacked transistors to each other, ohmic layers on the bottom and the sidewall of the common contact hole are separately formed. As a result, the respective ohmic layers are optimally formed to meet requirements or conditions. Accordingly, the contact resistance of the common contact may be minimized so that it is possible to enhance the speed of the semiconductor device.
摘要翻译：提供了一种形成具有堆叠晶体管的半导体器件的方法。当形成用于将堆叠的晶体管彼此连接的接触孔时，共同接触孔的底部和侧壁上的欧姆层分开形成。结果，各个欧姆层被最佳地形成以满足要求或条件。因此，公共接点的接触电阻可以最小化，从而可以提高半导体器件的速度。

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