会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • Liquid crystal display
    • 液晶显示器
    • US20050225689A1
    • 2005-10-13
    • US11146116
    • 2005-06-07
    • Jeong ParkJae Park
    • Jeong ParkJae Park
    • G02F1/1345G02F1/13G02F1/133G02F1/1333G02F1/1362G09G3/36H01L29/786
    • G02F1/13452G02F1/1345G02F1/136204
    • An LCD provided with an electrostatic protecting circuit includes a plurality of signal lines formed at constant intervals, a common electrode arranged in a vertical direction to the signal lines, a plurality of first electrostatic protecting circuits respectively arranged at one side of the common electrode between adjacent first and second signal lines in pairs to be connected with the first signal lines of the respective pairs and the common electrode, and a plurality of second electrostatic protecting circuits arranged a the other side of the common electrode to be connected with the second signal lines of the respective pairs and the common electrode. Thus, a narrow space of the signal lines can efficiently be used and the LCD of high resolution can be obtained.
    • 设置有静电保护电路的LCD包括以恒定间隔形成的多条信号线,沿着与信号线垂直的方向配置的公共电极,多个第一静电保护电路,分别配置在公共电极的相邻侧 成对地与各对的第一信号线和公共电极连接的第一和第二信号线,以及多个第二静电保护电路,其布置在与第二信号线的第二信号线连接的公共电极的另一侧 各对和公共电极。 因此,可以有效地使用信号线的狭窄空间,并且可以获得高分辨率的LCD。
    • 5. 发明申请
    • Liquid crystal display
    • 液晶显示器
    • US20050225688A1
    • 2005-10-13
    • US11146003
    • 2005-06-07
    • Jeong ParkJae Park
    • Jeong ParkJae Park
    • G02F1/1345G02F1/13G02F1/133G02F1/1333G02F1/1362G09G3/36H01L29/786
    • G02F1/13452G02F1/1345G02F1/136204
    • An LCD provided with an electrostatic protecting circuit includes a plurality of signal lines formed at constant intervals, a common electrode arranged in a vertical direction to the signal lines, a plurality of first electrostatic protecting circuits respectively arranged at one side of the common electrode between adjacent first and second signal lines in pairs to be connected with the first signal lines of the respective pairs and the common electrode, and a plurality of second electrostatic protecting circuits arranged at the other side of the common electrode to be connected with the second signal lines of the respective pairs and the common electrode. Thus, a narrow space of the signal lines can efficiently be used and the LCD of high resolution can be obtained.
    • 设置有静电保护电路的LCD包括以恒定间隔形成的多条信号线,沿着与信号线垂直的方向配置的公共电极,多个第一静电保护电路,分别配置在公共电极的相邻侧 成对地与各对的第一信号线和公共电极连接的第一和第二信号线,以及布置在公共电极的另一侧的多个第二静电保护电路,以与第二信号线的第二信号线 各对和公共电极。 因此,可以有效地使用信号线的狭窄空间,并且可以获得高分辨率的LCD。
    • 8. 发明申请
    • Vascular stent which is specially designed for the multiple drug loading and better drug elution
    • 血管支架特别设计用于多种药物装载和更好的药物洗脱
    • US20070123974A1
    • 2007-05-31
    • US11585028
    • 2006-10-23
    • Jeong ParkRichard Rhee
    • Jeong ParkRichard Rhee
    • A61F2/06
    • A61F2/856A61F2/91A61F2/915A61F2002/91525A61F2002/91533A61F2002/91558A61F2250/0035A61F2250/0068A61L31/16A61L2300/608
    • Provided is a vascular stent used in percutaneous coronary intervention (PCI) which is specially designed for multiple drug loading and improved drug elution, including: a plurality of ring structures extending in the longitudinal direction of the vascular stent, including a plurality of struts disposed in a zigzag formation and connected to each other to form a cylindrical loop; and a plurality of link structures disposed between the ring structures and connecting the ring structures in the longitudinal direction of the vascular stent, wherein each of the struts in a ring structure is connected to adjacent struts in the same ring structure through one of a plurality of linking ends, a slot loaded with drugs is formed in the strut in the longitudinal direction of the strut, and a multi-layer structure comprising a plurality of layers of drugs is loaded in the slot. The vascular stent effectively inhibits restenosis by loading a large amount of a drug or various types of drugs in multiple layers in slots of struts in the vascular stent and controlling elution of the drugs, and can be easily installed in a serpentine coronary artery with excellent flexibility. In addition, the link structure of the vascular stent is disposed in a symmetric formation, and thus, side branch accessibility is excellent and an additional coronary intervention can be performed easily in a branched artery.
    • 提供了一种用于经皮冠状动脉介入术(PCI)的血管支架,其特别设计用于多种药物装载和改进的药物洗脱,包括:在血管支架的纵向方向上延伸的多个环结构,包括多个支架, 一个Z字形并相互连接形成一个圆柱形环; 以及多个连接结构,其设置在所述环形结构之间并且在所述血管支架的纵向方向上连接所述环形结构,其中环形结构中的每个支柱通过多个 在支柱的长度方向上在支柱上形成装载有药物的狭缝,并且包含多层药物的多层结构被装载在狭槽中。 血管支架通过在血管支架的支柱狭槽中多层加载大量药物或多种药物,控制药物的洗脱,有效地抑制再狭窄,并且可以容易地安装在具有优异柔性的蛇形冠状动脉 。 此外,血管支架的连接结构以对称形式设置,因此侧支辅助性优异,并且在分支动脉中可以容易地进行额外的冠状动脉介入治疗。
    • 10. 发明申请
    • Semiconductor device having a structure to improve contact processing margin, and method of fabricating the same
    • 具有改善接触处理余量的结构的半导体器件及其制造方法
    • US20070037354A1
    • 2007-02-15
    • US11502060
    • 2006-08-09
    • Dae KimJeong Park
    • Dae KimJeong Park
    • H01L21/336
    • H01L27/11H01L21/76897
    • A method for fabricating a semiconductor device includes forming a first insulating pattern, a first conductive pattern, and a second conductive pattern on a semiconductor substrate; forming a spacer on sidewalls of the first insulating pattern, the first conductive pattern, and the second conductive pattern; forming a second insulating pattern over the substrate; forming a first salicide on an exposed portion of the substrate and a second salicide on an entire upper surface of the second conductive pattern; depositing a third insulating layer over the substrate, and etching selectively the third insulating layer to forming first and second contact holes exposing the first and second salicides. The method provides processing margin and prevents excessive etching of a conductive layer under the salicide, even if misalignment of an overlying contact hole happens.
    • 一种制造半导体器件的方法包括在半导体衬底上形成第一绝缘图案,第一导电图案和第二导电图案; 在第一绝缘图案,第一导电图案和第二导电图案的侧壁上形成间隔物; 在所述衬底上形成第二绝缘图案; 在所述基板的暴露部分上形成第一自对准硅化物,在所述第二导电图案的整个上表面上形成第二硅化物; 在衬底上沉积第三绝缘层,并且选择性地蚀刻第三绝缘层以形成暴露第一和第二杀液剂的第一和第二接触孔。 该方法即使发生上覆接触孔的未对准,也提供了处理余量,并且防止了自对准硅衬底下的导电层的过度蚀刻。