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    • 6. 发明授权
    • Bias scheme to reduce burn-in test time for semiconductor memory while
preventing junction breakdown
    • 减少半导体存储器的老化测试时间,同时防止结点故障的偏置方案
    • US5949726A
    • 1999-09-07
    • US120360
    • 1998-07-22
    • Jiunn-Chin TsengHon Shing Lau
    • Jiunn-Chin TsengHon Shing Lau
    • G11C29/50G11C7/00
    • G11C29/50
    • This invention describes a biasing scheme that reduces burn-in testing time as well as the number of cycles through the burn-in test for a semiconductor memory. The magnitude of a substrate back bias is reduced when a semiconductor memory device is taken into burn-in at a first value of an external applied voltage. When the memory device is brought out of burn-in, the substrate back bias is returned to the original operating level at a second value of the external applied voltage. The reduction of the substrate back bias allows for a higher external voltage to stress the semiconductor memory without forcing breakdown and results in a shorter test time. The burn-in test is entered at a higher magnitude of the external applied voltage than the voltage at which burn-in testing is exited. This helps to reduce the number of cycles through the burn-in test by providing a stronger external bias.
    • 本发明描述了通过半导体存储器的老化测试来减少老化测试时间以及循环次数的偏置方案。 当以外部施加电压的第一值将半导体存储器件置于老化状态时,衬底反向偏压的幅度减小。 当存储器件脱离老化时,衬底反向偏压以外部施加电压的第二值返回到初始工作电平。 衬底反向偏置的减小允许更高的外部电压对半导体存储器施加压力,而不会强制击穿并导致较短的测试时间。 老化测试在外部施加电压的大幅度下进入,而不是进行老化测试的电压。 这有助于通过提供更强的外部偏压来减少老化测试的周期数。