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1. 发明申请

US20080034346A1 Preparation for Software on Demand System 失效
标题翻译：软件点播系统的准备
公开(公告)号：US20080034346A1
公开(公告)日：2008-02-07
申请号：US11757929
申请日：2007-06-04
申请人： Hon Chan , Andrew Edwards , David Gillies , Carlos Gomes , Jiyang Liu , Patrick McDonald , Mark Roberts , Hoi Vo
发明人： Hon Chan , Andrew Edwards , David Gillies , Carlos Gomes , Jiyang Liu , Patrick McDonald , Mark Roberts , Hoi Vo
IPC分类号： G06F9/44
CPC分类号： G06F9/445
摘要： A method prepares a computer program for operation in a computer supply system that supplies portions, or program units, of program code or program data of the computer program as the program needs the portions. The method includes defining a program unit of the program and removing the program unit from the program, thereby producing a program skeleton that is missing the program unit. The method further includes inserting instructions in place of the program unit in the program skeleton. The instructions are operative to request the program unit when the program skeleton encounters the instructions. An information structure includes a program skeleton of a program. The program skeleton is missing a funclet of the program, but includes a placeholder in place of the funclet. The program skeleton additionally includes instructions in place of the funclet. The instructions are operative to request the funclet when the program skeleton encounters the instructions.
摘要翻译：一种方法准备用于在计算机供应系统中操作的计算机程序，该计算机供应系统在程序需要该部分时提供计算机程序的程序代码或程序数据的部分或程序单元。该方法包括定义程序的程序单元并从程序中移除程序单元，从而产生缺少程序单元的程序框架。该方法还包括在程序框架中插入代替程序单元的指令。当程序框架遇到指令时，指令可以用来请求程序单元。信息结构包括程序的程序框架。程序框架缺少该程序的功能，但包含一个占位符代替了funclet。程序框架还包括代替乐句的指令。当程序框架遇到指令时，指令可用于请求乐句。

2. 发明申请

US20050010891A1 Translation and transformation of heterogeneous programs 有权
标题翻译：异构程序的翻译和转换
公开(公告)号：US20050010891A1
公开(公告)日：2005-01-13
申请号：US10911901
申请日：2004-08-04
申请人： Ronnie Chaiken , Hon Keat Chan , Andrew Edwards , Gregory Eigsti , David Gillies , Bruce Kuramoto , John Lefor , Ken Pierce , Amitabh Srivastava , Hoi Vo , Gideon Yuval
发明人： Ronnie Chaiken , Hon Keat Chan , Andrew Edwards , Gregory Eigsti , David Gillies , Bruce Kuramoto , John Lefor , Ken Pierce , Amitabh Srivastava , Hoi Vo , Gideon Yuval
IPC分类号： G06F9/44 , G06F9/45
CPC分类号： G06F8/52
摘要： Each component binary in a heterogeneous program is translated from a platform-specific instruction set into a set of intermediate representation (IR) instructions that are platform-neutral. The IR instructions are grouped into IR code blocks, the IR code blocks into IR procedures, and the IR procedures into IR components to create an intermediate representation hierarchy for the program. An application program interface is provided that permits user access to the IR hierarchy for instrumentation, optimization, navigation, and manipulation of the IR hierarchy. The transformed IR hierarchy is then translated into platform-specific instructions and output as a modified binary. The user can designate a different platform for the output translation of a code block than the platform for which the code block was originally written. Prologue and epilog code is added to contiguous blocks that are translated into different architectures. The modified binary can be iterated through the translation and transformation process to produce multiple versions of the heterogeneous program.
摘要翻译：异构程序中的每个组件二进制文件从平台特定的指令集转换为平台中立的一组中间表示（IR）指令。 IR指令分为IR代码块，IR代码块转换为IR程序，IR程序分为IR组件，以创建程序的中间表示层次结构。提供了一个应用程序接口，允许用户访问IR层次结构，以进行IR层次结构的检测，优化，导航和操作。转换的IR层次结构然后被转换为平台特定的指令并作为修改的二进制输出。用户可以为代码块的输出转换指定与代码块最初写入的平台不同的平台。序言和epilog代码被添加到被转换成不同架构的连续块。修改的二进制文件可以通过翻译和转换过程进行迭代，以生成异构程序的多个版本。

3. 发明申请

US20180016082A1 User-Configurable Flavoring System 审中-公开
公开(公告)号：US20180016082A1
公开(公告)日：2018-01-18
申请号：US15265076
申请日：2016-09-14
申请人： Raza Bashir , Craig Wissent , Gustavo Galaz , Andrew Edwards
发明人： Raza Bashir , Craig Wissent , Gustavo Galaz , Andrew Edwards
IPC分类号： B65D81/32 , B65D43/02 , B65D25/04 , B65D43/16
CPC分类号： B65D81/3294 , A23L5/00 , A23L27/00 , A23V2002/00 , A47J47/04 , B65D25/04 , B65D43/0225 , B65D43/16
摘要： A user-configurable flavoring module is provided. The multi-flavoring module supplies multiple individual flavor compositions that may be used to flavor foodstuffs, particularly nutritional supplements. The multi-flavoring module may be provided separately or together with the foodstuff to be flavored and provides for individual or combinations of flavorings to flavor the foodstuff variably, on a per serving basis, readily changing the flavor and flavor intensity.

4. 发明申请

US20130164893A1 FABRICATION OF FLOATING GUARD RINGS USING SELECTIVE REGROWTH 失效
标题翻译：使用选择性重制的浮动护环的制造
公开(公告)号：US20130164893A1
公开(公告)日：2013-06-27
申请号：US13335355
申请日：2011-12-22
申请人： Linda Romano , David P. Bour , Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , Thomas R. Prunty
发明人： Linda Romano , David P. Bour , Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , Thomas R. Prunty
IPC分类号： H01L21/337 , H01L21/20
CPC分类号： H01L29/0619 , H01L29/0692 , H01L29/2003 , H01L29/404 , H01L29/8083 , H01L29/868 , H01L29/872
摘要： A method for fabricating edge termination structures in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface, forming an n-type GaN epitaxial layer coupled to the first surface of the n-type GaN substrate, and forming a growth mask coupled to the n-type GaN epitaxial layer. The method further includes patterning the growth mask to expose at least a portion of the n-type GaN epitaxial layer, and forming at least one p-type GaN epitaxial structure coupled to the at least a portion of the n-type GaN epitaxial layer. The at least one p-type GaN epitaxial structure comprises at least one portion of an edge termination structure. The method additionally includes forming a first metal structure electrically coupled to the second surface of the n-type GaN substrate.
摘要翻译：一种用于制造氮化镓（GaN）材料中的边缘端接结构的方法包括提供具有第一表面和第二表面的n型GaN衬底，形成耦合到n型GaN的第一表面的n型GaN外延层并且形成耦合到n型GaN外延层的生长掩模。该方法进一步包括图案化生长掩模以暴露n型GaN外延层的至少一部分，以及形成耦合到n型GaN外延层的至少一部分的至少一个p型GaN外延结构。所述至少一个p型GaN外延结构包括边缘端接结构的至少一部分。该方法还包括形成电耦合到n型GaN衬底的第二表面的第一金属结构。

5. 发明申请

US20130153917A1 INGAN OHMIC SOURCE CONTACTS FOR VERTICAL POWER DEVICES 有权
公开(公告)号：US20130153917A1
公开(公告)日：2013-06-20
申请号：US13326192
申请日：2011-12-14
申请人： Linda Romano , Andrew Edwards , Dave P. Bour , Isik C. Kizilyalli
发明人： Linda Romano , Andrew Edwards , Dave P. Bour , Isik C. Kizilyalli
IPC分类号： H01L29/20 , H01L21/332 , H01L21/20
CPC分类号： H01L29/66916 , H01L29/1066 , H01L29/2003 , H01L29/201 , H01L29/205 , H01L29/452 , H01L29/66924 , H01L29/8083
摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drift region, a gate region at least partially surrounding the channel region, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region. The source includes a GaN-layer coupled to an InGaN layer. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction.

6. 发明申请

US20130087835A1 METHOD AND SYSTEM FOR FLOATING GUARD RINGS IN GAN MATERIALS 有权
标题翻译：用于在燃料材料中浮动护环的方法和系统
公开(公告)号：US20130087835A1
公开(公告)日：2013-04-11
申请号：US13270606
申请日：2011-10-11
申请人： Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , David P. Bour , Linda Romano , Thomas R. Prunty
发明人： Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , David P. Bour , Linda Romano , Thomas R. Prunty
IPC分类号： H01L29/808 , H01L21/20 , H01L21/337
CPC分类号： H01L29/66143 , H01L21/26546 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/08 , H01L29/2003 , H01L29/404 , H01L29/66083 , H01L29/66204 , H01L29/66212 , H01L29/66416 , H01L29/66924 , H01L29/8083 , H01L29/868 , H01L29/872
摘要： A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure further includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, a first metallic structure electrically coupled to the second surface of the III-nitride substrate, and a III-nitride epitaxial structure of a second conductivity type coupled to the III-nitride epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure.
摘要翻译：半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。半导体结构还包括耦合到III族氮化物衬底的第一表面的第一导电类型的III族氮化物外延层，电耦合到III族氮化物衬底的第二表面的第一金属结构和III族氮化物耦合到III族氮化物外延层的第二导电类型的外延结构。 III族氮化物外延结构包括至少一个边缘端接结构。

7. 发明授权

US08026596B2 Thermal designs of packaged gallium nitride material devices and methods of packaging 有权
标题翻译：包装氮化镓材料装置的热设计和包装方法
公开(公告)号：US08026596B2
公开(公告)日：2011-09-27
申请号：US11839030
申请日：2007-08-15
申请人： Sameer Singhal , Andrew Edwards , Chul H. Park , Quinn Martin , Isik C. Kizilyalli
发明人： Sameer Singhal , Andrew Edwards , Chul H. Park , Quinn Martin , Isik C. Kizilyalli
IPC分类号： H01L23/373 , H01L21/58
CPC分类号： H01L27/0605 , H01L23/4824 , H01L29/0657 , H01L29/2003 , H01L29/7786 , H01L29/78681 , H01L2924/0002 , H01L2924/01322 , H01L2924/10158 , H01L2924/30105 , H01L2924/3011 , H01L2924/00
摘要： Gallium nitride material devices and methods associated with the devices are described. The devices may be designed to provide enhanced thermal conduction and reduced thermal resistance. The increased thermal conduction through and out of the gallium nitride devices enhances operability of the devices, including providing excellent RF operation, reliability, and lifetime.
摘要翻译：描述了与装置相关的氮化镓材料装置和方法。这些器件可以设计成提供增强的热传导和降低的热阻。通过和移出氮化镓器件的增加的热传导增强了器件的可操作性，包括提供优异的RF操作，可靠性和寿命。

8. 发明申请

US20070063143A1 Method for detecting an element 失效
标题翻译：检测元素的方法
公开(公告)号：US20070063143A1
公开(公告)日：2007-03-22
申请号：US11231141
申请日：2005-09-19
申请人： Larry Blackwood , Andrew Edwards , James Jewell , Edward Reber , Edward Seabury
发明人： Larry Blackwood , Andrew Edwards , James Jewell , Edward Reber , Edward Seabury
IPC分类号： G01N23/222
CPC分类号： G01N23/222
摘要： A method for detecting an element is described and which includes the steps of providing a gamma-ray spectrum which has a region of interest which corresponds with a small amount of an element to be detected; providing nonparametric assumptions about a shape of the gamma-ray spectrum in the region of interest, and which would indicate the presence of the element to be detected; and applying a statistical test to the shape of the gamma-ray spectrum based upon the nonparametric assumptions to detect the small amount of the element to be detected.
摘要翻译：描述了用于检测元件的方法，其包括以下步骤：提供具有与少量待检测元件对应的感兴趣区域的伽马射线谱; 提供关于感兴趣区域中的伽马射线谱的形状的非参数假设，并且其将指示待检测的元素的存在; 并且基于非参数假设对伽马射线谱的形状进行统计测试以检测待检测的元素的少量。

9. 发明申请

US20060106810A1 Publishing documents in a publish/subscribe data processing system 有权
标题翻译：在发布/订阅数据处理系统中发布文档
公开(公告)号：US20060106810A1
公开(公告)日：2006-05-18
申请号：US11282047
申请日：2005-11-17
申请人： Andrew Edwards , Andrew Hickson , Martin Holder , Trevor Lobban
发明人： Andrew Edwards , Andrew Hickson , Martin Holder , Trevor Lobban
IPC分类号： G06F17/30
CPC分类号： G06F17/30011
摘要： Documents are published in a publish subscribe data processing system. A first document to be published may have an associated topic. The first document is retained as a retained document. A second document to be published is retained as the retained document in response to receiving the second document before a predetermined time interval has passed. A copy of the second document is sent to a subscriber of the topic. A copy of the retained document is sent to the subscriber of the topic in response to a determination that the predetermined time interval has passed.
摘要翻译：文件发布在发布订阅数据处理系统中。要发布的第一个文档可能有一个相关的主题。第一份文件保留为保留文件。在预定的时间间隔过去之前，将要发布的第二个文档作为保留的文档被保留以响应于接收第二个文档。将第二份文件的副本发送给该主题的订阅者。响应于已经经过预定时间间隔的确定，保留的文档的副本被发送到主题的订户。

10. 发明授权

US09224828B2 Method and system for floating guard rings in gallium nitride materials 有权
标题翻译：氮化镓材料中浮动保护环的方法和系统
公开(公告)号：US09224828B2
公开(公告)日：2015-12-29
申请号：US13270606
申请日：2011-10-11
申请人： Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , David P. Bour , Linda Romano , Thomas R. Prunty
发明人： Andrew Edwards , Hui Nie , Isik C. Kizilyalli , Richard J. Brown , David P. Bour , Linda Romano , Thomas R. Prunty
IPC分类号： H01L29/76 , H01L29/66 , H01L29/808 , H01L29/868 , H01L29/872 , H01L29/06 , H01L29/20
CPC分类号： H01L29/66143 , H01L21/26546 , H01L29/0615 , H01L29/0619 , H01L29/0692 , H01L29/08 , H01L29/2003 , H01L29/404 , H01L29/66083 , H01L29/66204 , H01L29/66212 , H01L29/66416 , H01L29/66924 , H01L29/8083 , H01L29/868 , H01L29/872
摘要： A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure further includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, a first metallic structure electrically coupled to the second surface of the III-nitride substrate, and a III-nitride epitaxial structure of a second conductivity type coupled to the III-nitride epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure.
摘要翻译：半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。半导体结构还包括耦合到III族氮化物衬底的第一表面的第一导电类型的III族氮化物外延层，电耦合到III族氮化物衬底的第二表面的第一金属结构和III族氮化物耦合到III族氮化物外延层的第二导电类型的外延结构。 III族氮化物外延结构包括至少一个边缘端接结构。

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