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1. 发明授权

US4659650A Production of a lift-off mask and its application 失效
标题翻译：生产脱膜面膜及其应用
公开(公告)号：US4659650A
公开(公告)日：1987-04-21
申请号：US840344
申请日：1986-03-17
申请人： Holger Moritz , Gerd Pfeiffer
发明人： Holger Moritz , Gerd Pfeiffer
IPC分类号： H01L21/027 , G03F1/00 , G03F1/08 , G03F7/023 , G03F7/039 , G03F7/20 , G03F7/40 , H01L21/306 , B05D5/12 , H01L21/312
CPC分类号： G03F7/0233 , G03F7/2022
摘要： A positive resist containing a weak base and polyvinyl phenol as a film forming component is deposited on a substrate, subsequently exposed imagewise, cured, blanket exposed and developed in a KOH solution at temperatures of less than 10.degree. C. The resist pattern thus obtained is exposed to light having a wavelength ranging from 300 to 320 nm and finally heat-treated at temperatures ranging from 150.degree. to 280.degree. C. The finished lift-off mask is dimensionally stable at temperatures of .ltoreq.280.degree. C. and does not emit liquid or volatile components when heated.During application of the lift-off mask, a material is blanket vapor deposited at a substrate temperature ranging from about 160.degree. to 250.degree. C. on the resist pattern having openings with overhanging walls. Subsequently, the resist pattern is dissolved in a sodium metasilicate solution, causing the material vapor deposited thereon to be lifted off, with the material deposited on the substrate directly remaining.The lift-off mask is particularly suitable for generating conductor patterns on semiconductor substrates if low and uniform contact resistances between the conductor and the semiconductor material and a high degree of pattern accuracy and packing density are required.
摘要翻译：将含有弱碱和聚乙烯基苯酚作为成膜组分的正性抗蚀剂沉积在基材上，随后在小于10℃的温度下在KOH溶液中成像曝光，固化，覆盖曝光和显影。所得到的抗蚀剂图案为暴露于波长范围为300至320nm的光，最后在150至280℃的温度下进行热处理。成品剥离掩模在280℃的温度下尺寸稳定，不会在加热时放出液体或挥发性成分。在施加剥离掩模的过程中，在具有具有突出壁的开口的抗蚀剂图案上，在大约160℃至250℃的衬底温度下，将材料进行毯式气相沉积。随后，将抗蚀剂图案溶解在偏硅酸钠溶液中，使沉积在其上的材料被剥离，直接保留沉积在基板上的材料。如果需要导体和半导体材料之间的低且均匀的接触电阻并且需要高度的图案精度和封装密度，则剥离掩模特别适用于在半导体基板上产生导体图案。

2. 发明授权

US08637958B2 Structure and method for forming isolation and buried plate for trench capacitor 有权
标题翻译：用于形成沟槽电容器的隔离和掩埋板的结构和方法
公开(公告)号：US08637958B2
公开(公告)日：2014-01-28
申请号：US13617576
申请日：2012-09-14
申请人： Abhishek Dube , Subramanian S. Iyer , Babar Ali Khan , Oh-jung Kwon , Junedong Lee , Paul C. Parries , Chengwen Pei , Gerd Pfeiffer , Ravi Todi , Geng Wang
发明人： Abhishek Dube , Subramanian S. Iyer , Babar Ali Khan , Oh-jung Kwon , Junedong Lee , Paul C. Parries , Chengwen Pei , Gerd Pfeiffer , Ravi Todi , Geng Wang
IPC分类号： H01L21/02
CPC分类号： H01L29/945 , H01L21/76229 , H01L21/84 , H01L29/66181
摘要： A structure and method for forming isolation and a buried plate for a trench capacitor is disclosed. Embodiments of the structure comprise an epitaxial layer serving as the buried plate, and a bounded deep trench isolation area serving to isolate one or more deep trench structures. Embodiments of the method comprise angular implanting of the deep trench isolation area to form a P region at the base of the deep trench isolation area that serves as an anti-punch through implant.
摘要翻译：公开了用于形成隔离的结构和方法以及用于沟槽电容器的掩埋板。该结构的实施例包括用作掩埋板的外延层和用于隔离一个或多个深沟槽结构的有界深沟槽隔离区。该方法的实施例包括深沟槽隔离区域的角度注入，以在用作抗穿孔植入物的深沟槽隔离区域的底部形成P区。

3. 发明授权

US08486751B2 Method of manufacturing a photovoltaic cell 有权
标题翻译：光伏电池的制造方法
公开(公告)号：US08486751B2
公开(公告)日：2013-07-16
申请号：US12952465
申请日：2010-11-23
申请人： Lawrence A. Clevenger , Harold J. Hovel , Rainer Klaus Krause , Kevin S. Petrarca , Gerd Pfeiffer , Kevin M. Prettyman , Brian C. Sapp
发明人： Lawrence A. Clevenger , Harold J. Hovel , Rainer Klaus Krause , Kevin S. Petrarca , Gerd Pfeiffer , Kevin M. Prettyman , Brian C. Sapp
IPC分类号： H01L21/00 , H01L21/66
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a photovoltaic cell using a semiconductor wafer having a front side and a rear side, wherein the photovoltaic cell produces electricity when the front side of the semiconductor wafer is illuminated.
摘要翻译：使用具有前侧和后侧的半导体晶片制造光伏电池的方法，其中当半导体晶片的前侧被照亮时，光伏电池产生电力。

4. 发明申请

US20120160295A1 SOLAR CELL CLASSIFICATION METHOD 审中-公开
标题翻译：太阳能电池分类方法
公开(公告)号：US20120160295A1
公开(公告)日：2012-06-28
申请号：US13167792
申请日：2011-06-24
申请人： Lawrence A. Clevenger , Harold J. Hovel , Rainer Klaus Krause , Kevin S. Petrarca , Gerd Pfeiffer , Kevin Prettyman , Brian C. Sapp
发明人： Lawrence A. Clevenger , Harold J. Hovel , Rainer Klaus Krause , Kevin S. Petrarca , Gerd Pfeiffer , Kevin Prettyman , Brian C. Sapp
IPC分类号： H01L31/042 , H01L31/18 , G01R31/10
CPC分类号： H02S50/10
摘要： A method for characterizing the electronic properties of a solar cell to be used in a photovoltaic module comprises the steps of performing a room temperature IV curve measurement of the solar cell and classifying the solar cell based on this IV curve measurement. In order to take stress-related effects into account, the solar cells are reclassified depending on the result of an additional measurement conducted on the solar cells under stress. This stress-related measurement may be gained from light induced thermography (LIT) yielding information on diode shunt areas within the solar cell.
摘要翻译：用于表征在光伏模块中使用的太阳能电池的电子特性的方法包括以下步骤：基于该IV曲线测量，执行太阳能电池的室温IV曲线测量并对太阳能电池进行分类。为了考虑应力相关的影响，太阳能电池根据在应力下对太阳能电池进行的额外测量的结果重新分类。该应力相关测量可以从光诱导热成像（LIT）获得，产生关于太阳能电池内的二极管分流区域的信息。

5. 发明申请

US20110120519A1 Method of Manufacturing a Photovoltaic Cell 有权
标题翻译：制造光伏电池的方法
公开(公告)号：US20110120519A1
公开(公告)日：2011-05-26
申请号：US12952465
申请日：2010-11-23
申请人： Lawrence A. Clevenger , Harlod J. Hovel , Rainer Klaus Krause , Kevin S. Petrarca , Gerd Pfeiffer , Kevin M. Prettyman , Brian C. Sapp
发明人： Lawrence A. Clevenger , Harlod J. Hovel , Rainer Klaus Krause , Kevin S. Petrarca , Gerd Pfeiffer , Kevin M. Prettyman , Brian C. Sapp
IPC分类号： H01L31/042 , H01L21/66 , H01L31/02
CPC分类号： H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a photovoltaic cell using a semiconductor wafer having a front side and a rear side, wherein the photovoltaic cell produces electricity when the front side of the semiconductor wafer is illuminated., the method comprising the steps of:
摘要翻译：一种使用具有前侧和后侧的半导体晶片制造光伏电池的方法，其中当半导体晶片的前侧被照亮时，该光伏电池产生电力，该方法包括以下步骤：

6. 发明授权

US06531411B1 Surface roughness improvement of SIMOX substrates by controlling orientation of angle of starting material 失效
标题翻译：通过控制起始材料的角度取向，SIMOX基板的表面粗糙度提高
公开(公告)号：US06531411B1
公开(公告)日：2003-03-11
申请号：US10007845
申请日：2001-11-05
申请人： Anthony G. Domenicucci , Neena Garg , Kenneth J. Giewont , Richard J. Murphy , Gerd Pfeiffer , Gregory D. Pomarico , Frank J. Schmidt, Jr. , Terrance M. Tornatore
发明人： Anthony G. Domenicucci , Neena Garg , Kenneth J. Giewont , Richard J. Murphy , Gerd Pfeiffer , Gregory D. Pomarico , Frank J. Schmidt, Jr. , Terrance M. Tornatore
IPC分类号： H01L21461
CPC分类号： H01L21/76243 , Y10S977/721 , Y10S977/779 , Y10S977/856 , Y10S977/863 , Y10S977/881 , Y10S977/888 , Y10S977/90
摘要： A method of improving surface morphology of a semiconductor substrate when using an SOI technique comprises providing a silicon ingot positioned on a support member, orientating the silicon ingot in relation to the support member, and a cutting device, and cutting the silicon ingot along about a (100) crystal plane of the silicon ingot, preferably using a wire saw. This then provides a silicon substrate having an initial surface defining a miscut angle which is less than about 0.15 degrees from the (100) crystal plane. The method then comprises processing the silicon substrate using SIMOX processing, which includes implanting oxygen atoms in the silicon substrate to form a buried oxide layer and annealing the silicon substrate to provide a final substrate surface. Finally, the method includes accepting the final substrate surface for further processing when the final substrate surface measures between 2-20 Å RMS using an atomic force microscopy technique.
摘要翻译：当使用SOI技术时，改进半导体衬底的表面形态的方法包括提供位于支撑构件上的硅锭，使硅锭相对于支撑构件定向，以及切割装置，并且沿着约（100）晶锭的晶面，优选使用线锯。这样就提供了具有限定与（100）晶面小于约0.15度的误差角的初始表面的硅衬底。该方法然后包括使用SIMOX处理来处理硅衬底，其包括在硅衬底中注入氧原子以形成掩埋氧化物层并退火硅衬底以提供最终衬底表面。最后，该方法包括当最终的基底表面使用原子力显微镜技术测量2-20ÅRMS时，接受最终的基底表面进行进一步的处理。

7. 发明授权

US08772079B2 Backside contacting on thin layer photovoltaic cells 失效
标题翻译：在薄层光伏电池背面接触
公开(公告)号：US08772079B2
公开(公告)日：2014-07-08
申请号：US12594146
申请日：2008-04-08
申请人： Rainer Krause , Gerd Pfeiffer , Thorsten Muehge , Hans-Juergen Eickelmann , Michael Haag , Markus Schmidt
发明人： Rainer Krause , Gerd Pfeiffer , Thorsten Muehge , Hans-Juergen Eickelmann , Michael Haag , Markus Schmidt
IPC分类号： H01L31/18 , H01L31/0224
CPC分类号： H01L31/022441 , H01L31/02008 , H01L31/022425 , H01L31/0504 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method of backside contacting of thin layer photovoltaic cells having Si elements as well as thin film cells, like CIGS, is provided, including the following steps: providing a p-n-junction including a thin n-doped Si layer and a thin p-doped Si layer bonded on top of said n-doped Si layer; bonding said p-n-junction to a glass substrate; preparing contact points on said structured thin p-doped Si layer and said thin n-doped Si layer; and creating contact pins on said structured thin p-doped Si layer and said thin n-doped Si layer.
摘要翻译：提供了具有Si元素的薄层光伏电池以及诸如CIGS的薄膜电池的背面接触的方法，包括以下步骤：提供包括薄的n掺杂Si层和薄p掺杂的pn结 Si层结合在所述n掺杂Si层的顶部; 将所述p-n结键合到玻璃基板上; 在所述结构化的薄p掺杂Si层和所述薄n掺杂Si层上制备接触点; 以及在所述结构化的薄p掺杂Si层和所述薄n掺杂Si层上产生接触引脚。

8. 发明授权

US08735212B2 Silicon solar cell manufacture 有权
标题翻译：硅太阳能电池制造
公开(公告)号：US08735212B2
公开(公告)日：2014-05-27
申请号：US12866737
申请日：2009-01-13
申请人： Rainer Klaus Krause , Gerd Pfeiffer , Hans-Juergen Eickelmann , Thorsten Muehge
发明人： Rainer Klaus Krause , Gerd Pfeiffer , Hans-Juergen Eickelmann , Thorsten Muehge
IPC分类号： H01L31/0224
CPC分类号： H01L31/022433 , H01L31/0475 , H01L31/0508 , Y02E10/50
摘要： A silicon solar cell is manufactured by providing a carrier plate, and by applying a first contact pattern to the carrier plate. The first contact pattern includes a set of first laminar contacts. The silicon solar cell is further manufactured by applying a multitude of silicon slices to the first contact pattern, and by applying a second contact pattern to the multitude of silicon slices. Each first laminar contact of the set of first laminar contacts is in spatial laminar contact with maximally two silicon slices. The second contact pattern includes a set of second laminar contacts. Each second laminar contact of the set of second laminar contacts is in spatial laminar contact with maximally two silicon slices.
摘要翻译：硅太阳能电池通过提供载体板并且通过向载体板施加第一接触图案来制造。第一接触图案包括一组第一层状接触。硅太阳能电池进一步通过将多个硅片施加到第一接触图案并且通过向多个硅片施加第二接触图案而制造。该组第一层状接触件的每个第一层状接触件与最多两个硅片片层叠接触。第二接触图案包括一组第二层状接触。该组第二层状接触件的每个第二层状接触件与最多两个硅片片层叠接触。

9. 发明授权

US08665575B2 Solar module with overheat protection 有权
标题翻译：太阳能组件具有过热保护功能
公开(公告)号：US08665575B2
公开(公告)日：2014-03-04
申请号：US13166842
申请日：2011-06-23
申请人： Lawrence A. Clevenger , Harold J. Hovel , Rainer Krause , Zhengwen Li , Kevin S. Petrarca , Gerd Pfeiffer , Kevin Prettyman , Carl J. Radens , Brian C. Sapp
发明人： Lawrence A. Clevenger , Harold J. Hovel , Rainer Krause , Zhengwen Li , Kevin S. Petrarca , Gerd Pfeiffer , Kevin Prettyman , Carl J. Radens , Brian C. Sapp
IPC分类号： H02H5/04
CPC分类号： H02H7/20 , H01L31/02021 , H02H5/047 , Y02E10/50
摘要： A photovoltaic module (10) with a plurality of solar cells (20) interconnected in serial and/or parallel arrangement within the module (10) is equipped with an overheat protection system (30) for suppressing damages of the photovoltaic module (10) due to defects of the solar cells (20). The overheat protection system (30) comprises a heat sensor (32) which is thermally coupled to a solar cell (20). The heat sensor (32) is physically integrated into an electrical switch (34, 36, 38) which is electrically connected to said solar cell (20).
摘要翻译：具有在模块（10）内以串联和/或并联布置互连的多个太阳能电池（20）的光伏模块（10）装备有过热保护系统（30），用于抑制光伏模块（10）的损坏涉及太阳能电池的缺陷（20）。过热保护系统（30）包括热耦合到太阳能电池（20）的热传感器（32）。热传感器（32）物理地集成在电连接到所述太阳能电池（20）的电开关（34,36,38）中。

10. 发明授权

US08536035B2 Silicon-on-insulator substrate and method of forming 失效
标题翻译：绝缘体上硅衬底及其成型方法
公开(公告)号：US08536035B2
公开(公告)日：2013-09-17
申请号：US13363603
申请日：2012-02-01
申请人： Alan B. Botula , Mark D. Jaffe , Alvin J. Joseph , Kenneth F. McAvey , Gerd Pfeiffer , Richard A. Phelps
发明人： Alan B. Botula , Mark D. Jaffe , Alvin J. Joseph , Kenneth F. McAvey , Gerd Pfeiffer , Richard A. Phelps
IPC分类号： H01L21/425
CPC分类号： H01L21/76254
摘要： Silicon-on-insulator (SOI) structures and related methods of forming such structures. In one case, a method includes providing a silicon-on-insulator (SOI) handle substrate having: a substantially uniform resistivity profile along a depth of the handle substrate; and an interstitial oxygen (Oi) concentration of less than approximately 10 parts per million atoms (ppma). The method further includes counter-doping a surface region of the handle, causing the surface region to have a resistivity greater than approximately 3 kOhm-cm, and joining the surface region of the handle substrate with a donor wafer.
摘要翻译：绝缘体上硅（SOI）结构和形成这种结构的相关方法。在一种情况下，一种方法包括提供绝缘体上硅（SOI）手柄衬底，其具有：沿着手柄衬底的深度的基本均匀的电阻率分布; 和间隙氧（Oi）浓度小于约10ppm（ppma）。所述方法还包括对所述手柄的表面区域进行反掺杂，使所述表面区域具有大于约3kOhm-cm的电阻率，并且将所述手柄衬底的表面区域与施主晶片接合。

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