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1. 发明申请

US20050133919A1 Semiconductor structure with metal migration semiconductor barrier layers and method of forming the same 有权
标题翻译：具有金属迁移半导体阻挡层的半导体结构及其形成方法
公开(公告)号：US20050133919A1
公开(公告)日：2005-06-23
申请号：US10739755
申请日：2003-12-17
申请人： Hojun Yoon , Richard King , Jerry Kukulka , James Ermer , Maggy Lau
发明人： Hojun Yoon , Richard King , Jerry Kukulka , James Ermer , Maggy Lau
IPC分类号： H01L23/48
CPC分类号： H01L31/022425 , H01L31/0304 , H01L31/068 , Y02E10/544 , Y02E10/547
摘要： A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures. By providing a robust contact structure that may be used in semiconductor structures, for example in solar cells that power spacecraft or terrestrial solar cells used under concentrated sunlight, the high temperature reliability of the semiconductor structure will be improved and the operation time will be prolonged.
摘要翻译：半导体结构包括半导体衬底，半导体有源区，半导体接触层，至少一个金属迁移半导体阻挡层和金属接触。金属迁移半导体阻挡层可以嵌入在半导体接触层内。此外，金属迁移半导体阻挡层可以位于下方或上方并且与半导体接触层紧密接触。金属迁移半导体势垒层和半导体接触层形成接触结构，该接触结构在长时间暴露于高温期间防止金属从金属接触迁移到半导体有源层中。通过提供可用于半导体结构中的坚固的接触结构，例如在集中的太阳光下使用的太空电池或太阳能电池的太阳能电池中，将提高半导体结构的高温可靠性并且延长操作时间。

2. 发明申请

US20070138636A1 METHOD OF FORMING A SEMICONDUCTOR STRUCTURE HAVING METAL MIGRATION SEMICONDUCTOR BARRIER LAYERS 有权
标题翻译：形成具有金属迁移半导体阻挡层的半导体结构的方法
公开(公告)号：US20070138636A1
公开(公告)日：2007-06-21
申请号：US11676953
申请日：2007-02-20
申请人： Hojun Yoon , Richard King , Jerry Kukulka , James Ermer , Maggy Lau
发明人： Hojun Yoon , Richard King , Jerry Kukulka , James Ermer , Maggy Lau
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L31/022425 , H01L31/0304 , H01L31/068 , Y02E10/544 , Y02E10/547
摘要： A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures. By providing a robust contact structure that may be used in semiconductor structures, for example in solar cells that power spacecraft or terrestrial solar cells used under concentrated sunlight, the high temperature reliability of the semiconductor structure will be improved and the operation time will be prolonged.
摘要翻译：半导体结构包括半导体衬底，半导体有源区，半导体接触层，至少一个金属迁移半导体阻挡层和金属接触。金属迁移半导体阻挡层可以嵌入在半导体接触层内。此外，金属迁移半导体阻挡层可以位于下方或上方并且与半导体接触层紧密接触。金属迁移半导体势垒层和半导体接触层形成接触结构，该接触结构在长时间暴露于高温期间防止金属从金属接触迁移到半导体有源层中。通过提供可用于半导体结构中的坚固的接触结构，例如在集中的太阳光下使用的太空电池或太阳能电池的太阳能电池中，将提高半导体结构的高温可靠性并且延长操作时间。

3. 发明授权

US07202542B2 Semiconductor structure with metal migration semiconductor barrier layers and method of forming the same 有权
标题翻译：具有金属迁移半导体阻挡层的半导体结构及其形成方法
公开(公告)号：US07202542B2
公开(公告)日：2007-04-10
申请号：US10739755
申请日：2003-12-17
申请人： Hojun Yoon , Richard King , Jerry R. Kukulka , James H. Ermer , Maggy L. Lau
发明人： Hojun Yoon , Richard King , Jerry R. Kukulka , James H. Ermer , Maggy L. Lau
IPC分类号： H01L27/14
CPC分类号： H01L31/022425 , H01L31/0304 , H01L31/068 , Y02E10/544 , Y02E10/547
摘要： A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures. By providing a robust contact structure that may be used in semiconductor structures, for example in solar cells that power spacecraft or terrestrial solar cells used under concentrated sunlight, the high temperature reliability of the semiconductor structure will be improved and the operation time will be prolonged.
摘要翻译：半导体结构包括半导体衬底，半导体有源区，半导体接触层，至少一个金属迁移半导体阻挡层和金属接触。金属迁移半导体阻挡层可以嵌入在半导体接触层内。此外，金属迁移半导体阻挡层可以位于下方或上方并且与半导体接触层紧密接触。金属迁移半导体势垒层和半导体接触层形成接触结构，该接触结构在长时间暴露于高温期间防止金属从金属接触迁移到半导体有源层中。通过提供可用于半导体结构中的坚固的接触结构，例如在集中的太阳光下使用的太空电池或太阳能电池的太阳能电池中，将提高半导体结构的高温可靠性并且延长操作时间。

4. 发明授权

US07687386B2 Method of forming a semiconductor structure having metal migration semiconductor barrier layers 有权
标题翻译：形成具有金属迁移半导体势垒层的半导体结构的方法
公开(公告)号：US07687386B2
公开(公告)日：2010-03-30
申请号：US11676953
申请日：2007-02-20
申请人： Hojun Yoon , Richard King , Jerry R. Kukulka , James H. Ermer , Maggy L. Lau
发明人： Hojun Yoon , Richard King , Jerry R. Kukulka , James H. Ermer , Maggy L. Lau
IPC分类号： H01L21/28
CPC分类号： H01L31/022425 , H01L31/0304 , H01L31/068 , Y02E10/544 , Y02E10/547
摘要： A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures. By providing a robust contact structure that may be used in semiconductor structures, for example in solar cells that power spacecraft or terrestrial solar cells used under concentrated sunlight, the high temperature reliability of the semiconductor structure will be improved and the operation time will be prolonged.
摘要翻译：半导体结构包括半导体衬底，半导体有源区，半导体接触层，至少一个金属迁移半导体阻挡层和金属接触。金属迁移半导体阻挡层可以嵌入在半导体接触层内。此外，金属迁移半导体阻挡层可以位于下方或上方并且与半导体接触层紧密接触。金属迁移半导体势垒层和半导体接触层形成接触结构，该接触结构在长时间暴露于高温期间防止金属从金属接触迁移到半导体有源层中。通过提供可用于半导体结构中的坚固的接触结构，例如在集中的太阳光下使用的太空电池或太阳能电池的太阳能电池中，将提高半导体结构的高温可靠性并且延长操作时间。

5. 发明申请

US20070131275A1 Multijunction solar cell with bonded transparent conductive interlayer 审中-公开
标题翻译：具有粘结透明导电中间层的多结太阳能电池
公开(公告)号：US20070131275A1
公开(公告)日：2007-06-14
申请号：US11301529
申请日：2005-12-13
申请人： Geoffrey Kinsey , Richard King , Hojun Yoon , Denton McAlister
发明人： Geoffrey Kinsey , Richard King , Hojun Yoon , Denton McAlister
IPC分类号： H01L31/00
CPC分类号： H01L31/0725 , H01L31/022466 , H01L31/0687 , H01L31/076 , H01L31/1884 , Y02E10/544 , Y02E10/548
摘要： Methods and apparatuses for creating solar cell assemblies with bonded interlayers are disclosed. In summary, the present invention describes an apparatus and method for making a solar cell assembly with transparent conductive bonding interlayers. An apparatus in accordance with the present invention comprises a substrate, a first solar cell, coupled to a first side of the substrate, wherein the first solar cell comprises a first Transparent Conductive Coating (TCC) layer coupled to a first polarity electrode of the first solar cell, and a second solar cell, the second solar cell being bonded to the first solar cell by bonding the first TCC layer to the second solar cell.
摘要翻译：公开了用于制造具有键合夹层的太阳能电池组件的方法和装置。总之，本发明描述了一种用于制造具有透明导电键合中间层的太阳能电池组件的装置和方法。根据本发明的装置包括耦合到衬底的第一侧的衬底，第一太阳能电池，其中第一太阳能电池包括第一透明导电涂层（TCC）层，其耦合到第一极性电极太阳能电池和第二太阳能电池，第二太阳能电池通过将第一TCC层结合到第二太阳能电池而与第一太阳能电池接合。

6. 发明申请

US20070068572A1 Isoelectronic surfactant induced sublattice disordering in optoelectronic devices 有权
标题翻译：等电子表面活性剂诱导光电器件中的亚晶格紊乱
公开(公告)号：US20070068572A1
公开(公告)日：2007-03-29
申请号：US11517156
申请日：2006-09-07
申请人： Christopher Fetzer , James Ermer , Richard King , Peter Colter
发明人： Christopher Fetzer , James Ermer , Richard King , Peter Colter
IPC分类号： H01L31/00
CPC分类号： C30B25/186 , C30B29/40 , H01L21/02381 , H01L21/0245 , H01L21/02458 , H01L21/02463 , H01L21/02502 , H01L21/02521 , H01L21/02543 , H01L21/02658 , H01L31/0687 , H01L31/184 , Y02E10/544 , Y02P70/521
摘要： A method of disordering a layer of an optoelectronic device including; growing a plurality of lower layers; introducing an isoelectronic surfactant; growing a layer; allowing the surfactant to desorb; and growing subsequent layers all performed at a low pressure of 25 torr.
摘要翻译：一种使光电子器件层失调的方法，包括：生长多个下层; 引入等电子表面活性剂; 生长一层; 使表面活性剂解吸; 并且生长的后续层都在25托的低压下进行。

7. 发明申请

US20120260411A1 COMMODE VENTILATOR 审中-公开
标题翻译：商用通风机
公开(公告)号：US20120260411A1
公开(公告)日：2012-10-18
申请号：US13089156
申请日：2011-04-18
申请人： Richard King
发明人： Richard King
IPC分类号： E03D9/04
CPC分类号： E03D9/05
摘要： Apparatus for collecting and disposing of air from the vicinity of a commode, utilizing a room exhaust fan. The apparatus may comprise an air intake member mountable to the commode, a conduit extending to the inlet grille of the exhaust fan, and an adapter housing which fits over the intake of the fan and constrains the exhaust fan to draw exclusively or almost exclusively from the conduit. The conduit may comprise flat sided plural sections, with connecting sleeves and right angled elbow connectors. The adapter housing may bear closable louvers. The air intake member may be mounted to the commode using an adhesive bearing anchor, occupying the space between the bowl and the toilet seat. The apparatus may include clips for securing the conduit to a wall surface. The air intake member may be rigid or flaccid.
摘要翻译：利用室内排气风扇收集和处理从厨房附近的空气的设备。该装置可以包括可安装到通风口的进气构件，延伸到排气扇的入口格栅的导管以及适配器壳体，该适配器壳体装配在风扇的进气口上并且限制排气扇以专门或几乎完全从导管。导管可以包括平坦的多个部分，连接套筒和直角弯头连接器。适配器外壳可以承载可关闭的百叶窗。吸气构件可以使用粘合剂支承锚固件安装到粪便池，占据碗和马桶座圈之间的空间。该装置可以包括用于将导管固定到壁表面的夹子。进气件可能是刚性或松弛的。

8. 发明申请

US20110039014A1 COMPOSITE PROSTHETIC BEARING HAVING A CROSSLINKED ARTICULATING SURFACE AND METHOD FOR MAKING THE SAME 审中-公开
标题翻译：具有交联表面的复合预制轴承及其制造方法
公开(公告)号：US20110039014A1
公开(公告)日：2011-02-17
申请号：US12911053
申请日：2010-10-25
申请人： Richard King , Donald E. McNulty , Todd S. Smith
发明人： Richard King , Donald E. McNulty , Todd S. Smith
IPC分类号： B05D3/06
CPC分类号： B29C43/003 , A61F2/3094 , A61F2/34 , A61F2/389 , A61F2/4081 , A61F2002/30133 , A61F2002/30367 , A61F2002/30403 , A61F2002/30822 , A61F2002/30827 , A61F2002/30878 , A61F2002/30892 , A61F2002/30971 , A61F2002/3412 , A61F2002/4631 , A61F2220/0025 , A61F2220/0033 , A61F2230/0015 , A61F2310/00011 , A61L27/16 , A61L27/48 , B29C35/08 , B29C43/52 , B29K2023/0683 , B29K2105/24 , B29K2105/243 , B29K2623/0683 , B29K2995/0083 , B29K2995/0087 , B29K2995/0089 , B29L2009/00 , B29L2031/7532 , B32B27/16 , C08J3/245 , C08J3/28 , C08L23/06
摘要： An implantable prosthetic bearing is constructed of a composite material having a first layer and second layer. The first layer has an articulating surface defined therein, whereas the second layer has a engaging surface defined therein for engaging either another prosthetic component or the bone itself. The first layer of the implantable prosthetic bearing is constructed of crosslinked polymer such as Ultra-High Molecular Weight Polyethylene, whereas the second layer of the implantable prosthetic bearing is constructed of polymer such as Ultra-High Molecular Weight Polyethylene that is either non-crosslinked or crosslinked to a lesser degree than the first layer. In such a manner, the first layer possesses mechanical properties which are advantageous in regard to the articulating surface (e.g., enhanced wear and oxidation resistance), whereas the second layer possesses mechanical properties which are advantageous in regard to the engaging surface (e.g., high ductility, toughness, and creep resistance). A method of making a prosthetic bearing is also disclosed.
摘要翻译：可植入假体轴承由具有第一层和第二层的复合材料构成。第一层具有限定在其中的铰接表面，而第二层具有限定在其中的接合表面，用于接合另一个假体部件或骨骼本身。可植入假体轴承的第一层由诸如超高分子量聚乙烯的交联聚合物构成，而可植入假体轴承的第二层由诸如超高分子量聚乙烯的聚合物构成，其是非交联的或非交联的交联到比第一层更小的程度。以这种方式，第一层具有关于铰接表面有利的机械性质（例如，增强的耐磨性和抗氧化性），而第二层具有在接合表面方面有利的机械性能（例如，高延展性，韧性和抗蠕变性）。还公开了制造假体轴承的方法。

9. 发明授权

US07879275B2 Orthopaedic bearing and method for making the same 有权
标题翻译：制造可植入矫形轴承的方法
公开(公告)号：US07879275B2
公开(公告)日：2011-02-01
申请号：US11027662
申请日：2004-12-30
申请人： Todd S. Smith , Mark D. Hanes , Richard King
发明人： Todd S. Smith , Mark D. Hanes , Richard King
IPC分类号： B29C43/20
CPC分类号： A61F2/4081 , A61F2/30767 , A61F2/3094 , A61F2/32 , A61F2/38 , A61F2/42 , A61F2002/30004 , A61F2002/30878 , A61F2002/30902 , A61F2002/30971 , A61F2250/0014 , A61F2310/00017 , A61F2310/00023 , A61F2310/00029
摘要： An orthopaedic bearing includes a ceramic component having a polymer composite secured thereto. A method of making an orthopaedic bearing is also disclosed.
摘要翻译：矫形轴承包括固定有聚合物复合物的陶瓷部件。还公开了一种制造矫形轴承的方法。

10. 发明申请

US20090223957A1 Welded full contact floating roof and method 审中-公开
标题翻译：焊接全接触浮顶和方法
公开(公告)号：US20090223957A1
公开(公告)日：2009-09-10
申请号：US12075229
申请日：2008-03-06
申请人： Michael J. Doxey , Richard King
发明人： Michael J. Doxey , Richard King
IPC分类号： B65D88/34
CPC分类号： B65D88/34 , B23K31/02 , B23K2101/12 , Y10T29/49616 , Y10T29/49629 , Y10T29/49936 , Y10T29/49968 , Y10T29/49993
摘要： A sealed floating roof for a storage tank, comprising a frame and roof panels, in which the frame provides a guide for directing an automatic welder along said structure to allow for automated welding of the roof panels to the frame, and a method of forming such a roof.
摘要翻译：一种用于储罐的密封浮顶，包括框架和屋顶板，框架提供用于沿着所述结构引导自动焊机的引导件，以允许将屋顶板自动焊接到框架，以及形成这样的方法屋顶。

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