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    • 2. 发明申请
    • COMMODE VENTILATOR
    • 商用通风机
    • US20120260411A1
    • 2012-10-18
    • US13089156
    • 2011-04-18
    • Richard King
    • Richard King
    • E03D9/04
    • E03D9/05
    • Apparatus for collecting and disposing of air from the vicinity of a commode, utilizing a room exhaust fan. The apparatus may comprise an air intake member mountable to the commode, a conduit extending to the inlet grille of the exhaust fan, and an adapter housing which fits over the intake of the fan and constrains the exhaust fan to draw exclusively or almost exclusively from the conduit. The conduit may comprise flat sided plural sections, with connecting sleeves and right angled elbow connectors. The adapter housing may bear closable louvers. The air intake member may be mounted to the commode using an adhesive bearing anchor, occupying the space between the bowl and the toilet seat. The apparatus may include clips for securing the conduit to a wall surface. The air intake member may be rigid or flaccid.
    • 利用室内排气风扇收集和处理从厨房附近的空气的设备。 该装置可以包括可安装到通风口的进气构件,延伸到排气扇的入口格栅的导管以及适配器壳体,该适配器壳体装配在风扇的进气口上并且限制排气扇以专门或几乎完全从 导管。 导管可以包括平坦的多个部分,连接套筒和直角弯头连接器。 适配器外壳可以承载可关闭的百叶窗。 吸气构件可以使用粘合剂支承锚固件安装到粪便池,占据碗和马桶座圈之间的空间。 该装置可以包括用于将导管固定到壁表面的夹子。 进气件可能是刚性或松弛的。
    • 8. 发明授权
    • Semiconductor structure with metal migration semiconductor barrier layers and method of forming the same
    • 具有金属迁移半导体阻挡层的半导体结构及其形成方法
    • US07202542B2
    • 2007-04-10
    • US10739755
    • 2003-12-17
    • Hojun YoonRichard KingJerry R. KukulkaJames H. ErmerMaggy L. Lau
    • Hojun YoonRichard KingJerry R. KukulkaJames H. ErmerMaggy L. Lau
    • H01L27/14
    • H01L31/022425H01L31/0304H01L31/068Y02E10/544Y02E10/547
    • A semiconductor structure includes a semiconductor substrate, a semiconductor active region, a semiconductor contact layer, at least one metal migration semiconductor barrier layer, and a metal contact. The metal migration semiconductor barrier layer may be embedded within the semiconductor contact layer. Furthermore, the metal migration semiconductor barrier layer may be located underneath or above and in intimate contact with the semiconductor contact layer. The metal migration semiconductor barrier layer and the semiconductor contact layer form a contact structure that prevents metals from migrating from the metal contact into the semiconductor active layer during long-term exposure to high temperatures. By providing a robust contact structure that may be used in semiconductor structures, for example in solar cells that power spacecraft or terrestrial solar cells used under concentrated sunlight, the high temperature reliability of the semiconductor structure will be improved and the operation time will be prolonged.
    • 半导体结构包括半导体衬底,半导体有源区,半导体接触层,至少一个金属迁移半导体阻挡层和金属接触。 金属迁移半导体阻挡层可以嵌入在半导体接触层内。 此外,金属迁移半导体阻挡层可以位于下方或上方并且与半导体接触层紧密接触。 金属迁移半导体势垒层和半导体接触层形成接触结构,该接触结构在长时间暴露于高温期间防止金属从金属接触迁移到半导体有源层中。 通过提供可用于半导体结构中的坚固的接触结构,例如在集中的太阳光下使用的太空电池或太阳能电池的太阳能电池中,将提高半导体结构的高温可靠性并且延长操作时间。
    • 10. 发明申请
    • Solar cells having a transparent composition-graded buffer layer
    • 具有透明组成梯度缓冲层的太阳能电池
    • US20050274411A1
    • 2005-12-15
    • US10868080
    • 2004-06-15
    • Richard KingChristopher FetzerPeter Colter
    • Richard KingChristopher FetzerPeter Colter
    • H01L31/00
    • H01L31/0687H01L31/0735H01L31/1852Y02E10/544Y02P70/521
    • A solar cell includes a first layer having a first-layer lattice parameter, a second layer having a second-layer lattice parameter different from the first-layer lattice parameter, wherein the second layer includes a photoactive second-layer material; and a third layer having a third-layer lattice parameter different from the second-layer lattice parameter, wherein the third layer includes a photoactive third-layer material. A transparent buffer layer extends between and contacts the second layer and the third layer and has a buffer-layer lattice parameter that varies with increasing distance from the second layer toward the third layer, so as to lattice match to the second layer and to the third layer. There may be additional subcell layers and buffer layers in the solar cell.
    • 太阳能电池包括具有第一层晶格参数的第一层,具有不同于第一层晶格参数的第二层晶格参数的第二层,其中第二层包括光活性第二层材料; 以及具有不同于所述第二层晶格参数的第三层晶格参数的第三层,其中所述第三层包括光活性第三层材料。 透明缓冲层在第二层和第三层之间延伸并接触第二层和第三层,并且具有随着从第二层朝向第三层的距离的增加而变化的缓冲层晶格参数,以便与第二层和第三层的晶格匹配 层。 在太阳能电池中可能存在附加的子电池层和缓冲层。