会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • METHOD FOR MANUFACTURING SOLAR CELL
    • 制造太阳能电池的方法
    • US20130029450A1
    • 2013-01-31
    • US13641190
    • 2011-04-19
    • Chae Hwan JeongJong Ho LeeHo Sung KimJin Hyeok KimSuk Ho Lee
    • Chae Hwan JeongJong Ho LeeHo Sung KimJin Hyeok KimSuk Ho Lee
    • H01L31/18
    • H01L31/0326H01L31/022425H01L31/0322H01L31/03923H01L31/0749H01L31/1872Y02E10/541Y02P70/521
    • The present invention provides a method for manufacturing a solar cell capable of suppressing volatilization of selenium and deformation of a substrate during a manufacturing process. According to the present invention, the method for manufacturing the solar cell comprises the steps of: providing a substrate; forming a rear electrode on the substrate; forming a precursor film for a light absorption film on the rear electrode; forming a light absorption film by progressing a crystallization process for the precursor film for the light absorption film; forming a buffer film on the light absorption film; forming a window film on the buffer film, and forming an anti-reflection film on the window film; and partially patterning the anti-reflection film, and forming a grid electrode in a patterned area. Said precursor film for the light absorption film includes Cu—Zn—Sn—S (Cu2ZnSnS4), CuInSe2, CuInS2, Cu(InGa)Se2, or Cu(InGa)S2. Further, a Cu—Zn—Sn—S (Cu2ZnSnS4) precursor film, a CuInSe2 precursor film, a CuInS2 precursor film, and a Cu (InGa)Se2 precursor film or a Cu(InGa)S2 precursor film can have a multi-layer structure of each component or a single-layer structure having compounds of the components. Said crystallization step for the precursor film is progressed through an electron-beam irradiation process.
    • 本发明提供一种制造太阳能电池的方法,所述太阳能电池能够在制造过程中抑制硒的挥发和基板的变形。 根据本发明,太阳能电池的制造方法包括以下步骤:提供基板; 在所述基板上形成后电极; 在后电极上形成用于光吸收膜的前体膜; 通过对用于光吸收膜的前体膜进行结晶化处理来形成光吸收膜; 在光吸收膜上形成缓冲膜; 在缓冲膜上形成窗膜,在窗膜上形成防反射膜; 并且部分地构图防反射膜,并且在图案化区域中形成栅格电极。 所述光吸收膜前体膜包括Cu-Zn-Sn-S(Cu2ZnSnS4),CuInSe2,CuInS2,Cu(InGa)Se2或Cu(InGa)S2。 此外,Cu-Zn-Sn-S(Cu2ZnSnS4)前体膜,CuInSe2前体膜,CuInS2前体膜和Cu(InGa)Se2前体膜或Cu(InGa)S2前体膜可以具有多层 每个组分的结构或具有组分化合物的单层结构。 前体膜的所述结晶步骤通过电子束照射工艺进行。