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1. 发明授权

US08253125B2 Semiconductor light emitting device and method of manufacturing the same 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US08253125B2
公开(公告)日：2012-08-28
申请号：US12275536
申请日：2008-11-21
申请人： Ho Sun Paek , Sung Nam Lee , Ten Sakong , Youn Joon Sung , In Hoe Hur
发明人： Ho Sun Paek , Sung Nam Lee , Ten Sakong , Youn Joon Sung , In Hoe Hur
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/12 , H01L33/16
摘要： There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法。根据本发明的一个方面的制造氮化物半导体发光器件的方法可以包括：氮化m面蓝宝石衬底的表面; 在m面蓝宝石衬底上形成高温缓冲层; 在高温缓冲层上沉积半极（11-22）面氮化物薄膜; 以及在所述半极性（11-22）面氮化物薄膜上形成包括第一氮化物半导体层，有源层和第二氮化物半导体层的发光结构。

2. 发明申请

US20090134410A1 SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US20090134410A1
公开(公告)日：2009-05-28
申请号：US12275536
申请日：2008-11-21
申请人： Ho Sun Paek , Sung Nam Lee , Tan Sakong , Youn Joon Sung , In Hoe Hur
发明人： Ho Sun Paek , Sung Nam Lee , Tan Sakong , Youn Joon Sung , In Hoe Hur
IPC分类号： H01L33/00 , H01L21/363
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/02516 , H01L21/0254 , H01L21/0262 , H01L21/02658 , H01L33/12 , H01L33/16
摘要： There is provided a method of manufacturing a nitride semiconductor light emitting device. A method of manufacturing a nitride semiconductor light emitting device according to an aspect of the invention may include: nitriding a surface of an m-plane sapphire substrate; forming a high-temperature buffer layer on the m-plane sapphire substrate; depositing a semi-polar (11-22) plane nitride thin film on the high-temperature buffer layer; and forming a light emitting structure including a first nitride semiconductor layer, an active layer, and a second nitride semiconductor layer on the semi-polar (11-22) plane nitride thin film.
摘要翻译：提供了一种制造氮化物半导体发光器件的方法。根据本发明的一个方面的制造氮化物半导体发光器件的方法可以包括：氮化m面蓝宝石衬底的表面; 在m面蓝宝石衬底上形成高温缓冲层; 在高温缓冲层上沉积半极（11-22）面氮化物薄膜; 以及在所述半极性（11-22）面氮化物薄膜上形成包括第一氮化物半导体层，有源层和第二氮化物半导体层的发光结构。

3. 发明申请

US20090298214A1 METHOD OF GROWING NITRIDE SINGLE CRYSTAL AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
标题翻译：生长氮化物单晶的方法及制造氮化物半导体发光装置的方法
公开(公告)号：US20090298214A1
公开(公告)日：2009-12-03
申请号：US12263873
申请日：2008-11-03
申请人： Ho Sun Paek , Sung Nam Lee , Jeong Wook Lee , Il Hyung Jung , Youn Joon Sung
发明人： Ho Sun Paek , Sung Nam Lee , Jeong Wook Lee , Il Hyung Jung , Youn Joon Sung
IPC分类号： H01L33/00 , H01L21/205
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L33/08 , H01L33/12
摘要： There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single crystal layer on a substrate; forming a dielectric pattern having an open area on the first nitride single crystal layer, the open area exposing a part of an upper surface of the first nitride single crystal layer; and growing a second nitride single crystal layer on the first nitride single crystal layer through the open area while the second nitride single crystal layer grows to be equal to or larger than a height of the dielectric pattern, wherein the height of the dielectric pattern is greater than a width of the open area so that dislocations in the second nitride single crystal layer move laterally, collide with side walls of the dielectric pattern, and are terminated.
摘要翻译：提供了生长氮化物单晶的方法。根据本发明的一个方面的生长氮化物单晶的方法可以包括：在衬底上生长第一氮化物单晶层; 在所述第一氮化物单晶层上形成具有开放区域的电介质图案，所述开放区域露出所述第一氮化物单晶层的上表面的一部分; 以及通过所述开放区域在所述第一氮化物单晶层上生长第二氮化物单晶层，而所述第二氮化物单晶层生长至等于或大于所述电介质图案的高度，其中所述电介质图案的高度较大比第二氮化物单晶层的位错横向移动，与介质图案的侧壁碰撞而终止。

4. 发明授权

US08148178B2 Method of growing nitride single crystal and method of manufacturing nitride semiconductor light emitting device 有权
标题翻译：氮化物单晶的生长方法及氮化物半导体发光元件的制造方法
公开(公告)号：US08148178B2
公开(公告)日：2012-04-03
申请号：US12263873
申请日：2008-11-03
申请人： Ho Sun Paek , Sung Nam Lee , Jeong Wook Lee , Il Hyung Jung , Youn Joon Sung
发明人： Ho Sun Paek , Sung Nam Lee , Jeong Wook Lee , Il Hyung Jung , Youn Joon Sung
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/02639 , H01L33/08 , H01L33/12
摘要： There is provided a method of growing a nitride single crystal. A method of growing a nitride single crystal according to an aspect of the invention may include: growing a first nitride single crystal layer on a substrate; forming a dielectric pattern having an open area on the first nitride single crystal layer, the open area exposing a part of an upper surface of the first nitride single crystal layer; and growing a second nitride single crystal layer on the first nitride single crystal layer through the open area while the second nitride single crystal layer grows to be equal to or larger than a height of the dielectric pattern, wherein the height of the dielectric pattern is greater than a width of the open area so that dislocations in the second nitride single crystal layer move laterally, collide with side walls of the dielectric pattern, and are terminated.
摘要翻译：提供了生长氮化物单晶的方法。根据本发明的一个方面的生长氮化物单晶的方法可以包括：在衬底上生长第一氮化物单晶层; 在所述第一氮化物单晶层上形成具有开放区域的电介质图案，所述开放区域露出所述第一氮化物单晶层的上表面的一部分; 以及通过所述开放区域在所述第一氮化物单晶层上生长第二氮化物单晶层，而所述第二氮化物单晶层生长至等于或大于所述电介质图案的高度，其中所述电介质图案的高度较大比第二氮化物单晶层的位错横向移动，与介质图案的侧壁碰撞而终止。

5. 发明授权

US07790584B2 Method of growing semi-polar nitride single crystal thin film and method of manufacturing nitride semiconductor light emitting diode using the same 有权
标题翻译：生长半极性氮化物单晶薄膜的方法和使用其制造氮化物半导体发光二极管的方法
公开(公告)号：US07790584B2
公开(公告)日：2010-09-07
申请号：US12246594
申请日：2008-10-07
申请人： Ho Sun Paek , Jeong Wook Lee , Youn Joon Sung
发明人： Ho Sun Paek , Jeong Wook Lee , Youn Joon Sung
IPC分类号： H01L21/36
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007 , H01L33/16
摘要： A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single crystal base layer, and growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction. The growing of the semi-polar nitride single crystal thin film in a lateral direction includes primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane, and secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (11 22) plane.
摘要翻译：生长半极性氮化物单晶薄膜的方法。该方法包括在m面六方晶系单晶衬底上形成半极化氮化物单晶基底层，在半极化氮化物单晶基底层上形成电介质图案层，并生长半极化氮化物单晶薄膜在具有横向方向上具有电介质图案层的半极性氮化物单晶基底层上的膜。半极性氮化物单晶薄膜在横向上的生长包括主要在横向上生长半极性氮化物单晶薄膜，使得半极性氮化物单晶基底层上的生长面的一部分具有 a平面，并且在横向上二次生长半极性氮化物单晶薄膜，使得主要生长的半极性氮化物单晶薄膜的侧壁被组合成具有（1122）面。

6. 发明申请

US20090155947A1 METHOD OF GROWING SEMI-POLAR NITRIDE SINGLE CRYSTAL THIN FILM AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE USING THE SAME 有权
标题翻译：使用半阳极氮化物单晶薄膜的方法和使用其制造氮化物半导体发光二极管的方法
公开(公告)号：US20090155947A1
公开(公告)日：2009-06-18
申请号：US12246594
申请日：2008-10-07
申请人： Ho Sun Paek , Jeong Wook Lee , Youn Joon Sung
发明人： Ho Sun Paek , Jeong Wook Lee , Youn Joon Sung
IPC分类号： H01L33/00 , H01L21/205
CPC分类号： H01L21/0254 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/02609 , H01L21/0262 , H01L21/02639 , H01L21/02647 , H01L21/0265 , H01L33/007 , H01L33/16
摘要： A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single crystal base layer, and growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction. The growing of the semi-polar nitride single crystal thin film in a lateral direction includes primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane, and secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (11 22) plane.
摘要翻译：生长半极性氮化物单晶薄膜的方法。该方法包括在m面六方晶系单晶衬底上形成半极化氮化物单晶基底层，在半极化氮化物单晶基底层上形成电介质图案层，并生长半极化氮化物单晶薄膜在具有横向方向上具有电介质图案层的半极性氮化物单晶基底层上的膜。半极性氮化物单晶薄膜在横向上的生长包括主要在横向上生长半极性氮化物单晶薄膜，使得半极性氮化物单晶基底层上的生长面的一部分具有 a平面，并且在横向上二次生长半极性氮化物单晶薄膜，使得主要生长的半极性氮化物单晶薄膜的侧壁被组合成具有（11 22）飞机。

7. 发明授权

US08163579B2 Method of manufacturing substrate for forming device, and method of manufacturing nitride-based semiconductor laser diode 有权
标题翻译：用于形成装置的基板的制造方法以及制造氮化物基半导体激光二极管的方法
公开(公告)号：US08163579B2
公开(公告)日：2012-04-24
申请号：US12073293
申请日：2008-03-04
申请人： Youn Joon Sung , Ho Sun Paek
发明人： Youn Joon Sung , Ho Sun Paek
IPC分类号： H01L33/00
CPC分类号： H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/3202
摘要： Provided is a method of manufacturing a semiconductor laser diode. The method includes the steps of: preparing a GaN substrate having an a-plane or m-plane GaN layer formed thereon; forming a plurality of laser diode structures on the GaN layer; etching the GaN substrate such that a cutting reference line is formed in a groove shape along the crystal surface of the a-plane or m-plane, not a main plane; and cutting the GaN substrate along the cutting reference line so as to form a mirror surface of the semiconductor laser diode, the mirror surface coinciding with the crystal surface of the a-plane or m-plane, not the main plane.
摘要翻译：提供一种制造半导体激光二极管的方法。该方法包括以下步骤：制备其上形成有a面或m面GaN层的GaN衬底; 在所述GaN层上形成多个激光二极管结构; 蚀刻GaN衬底，使得切割参考线沿着a面或m面的晶体表面而不是主平面形成为沟槽形状; 并且沿着切割参考线切割GaN衬底以形成半导体激光二极管的镜面，镜面与a面或m面的晶体表面重合，而不是主平面。

8. 发明申请

US20090155945A1 Method of manufacturing substrate for forming device, and method of manufacturing nitride-based semiconductor laser diode 有权
标题翻译：用于形成装置的基板的制造方法以及制造氮化物基半导体激光二极管的方法
公开(公告)号：US20090155945A1
公开(公告)日：2009-06-18
申请号：US12073293
申请日：2008-03-04
申请人： Youn Joon Sung , Ho Sun Paek
发明人： Youn Joon Sung , Ho Sun Paek
IPC分类号： H01L21/00
CPC分类号： H01S5/0201 , H01S5/0202 , H01S5/0213 , H01S5/3202
摘要： Provided is a method of manufacturing a semiconductor laser diode. The method includes the steps of: preparing a GaN substrate having an a-plane or m-plane GaN layer formed thereon; forming a plurality of laser diode structures on the GaN layer; etching the GaN substrate such that a cutting reference line is formed in a groove shape along the crystal surface of the a-plane or m-plane, not a main plane; and cutting the GaN substrate along the cutting reference line so as to form a mirror surface of the semiconductor laser diode, the mirror surface coinciding with the crystal surface of the a-plane or m-plane, not the main plane.
摘要翻译：提供一种制造半导体激光二极管的方法。该方法包括以下步骤：制备其上形成有a面或m面GaN层的GaN衬底; 在所述GaN层上形成多个激光二极管结构; 蚀刻GaN衬底，使得切割参考线沿着a面或m面的晶体表面而不是主平面形成为沟槽形状; 并且沿着切割参考线切割GaN衬底以形成半导体激光二极管的镜面，镜面与a面或m面的晶体表面重合，而不是主平面。

9. 发明申请

US20120211780A1 LED PACKAGE MODULE 有权
标题翻译： LED封装模块
公开(公告)号：US20120211780A1
公开(公告)日：2012-08-23
申请号：US13404924
申请日：2012-02-24
申请人： Suk Ho Jung , Hyung Kun Kim , Hak Hwan Kim , Young Jin Lee , Ho Sun Paek
发明人： Suk Ho Jung , Hyung Kun Kim , Hak Hwan Kim , Young Jin Lee , Ho Sun Paek
IPC分类号： H01L33/50
CPC分类号： H01L25/0753 , H01L33/486 , H01L33/504 , H01L33/508 , H01L2224/48091 , H01L2224/48235 , H01L2924/00014
摘要： An LED package module according to an aspect of the invention may include: a substrate having predetermined electrodes thereon; a plurality of LED chips mounted onto the substrate, separated from each other at predetermined intervals, and electrically connected to the electrodes; a first color resin portion molded around at least one of the plurality of LED chips; a second color resin portion molded around all of the LED chips except for the LED chip around which the first color resin portion is molded, and having a different color from the first color resin portion; and a third color resin portion encompassing both the first color resin portion and the second color resin portion and having a different color from the first color resin portion and the second color resin portion.
摘要翻译：根据本发明的一个方面的LED封装模块可以包括：其上具有预定电极的基板; 安装在基板上的多个LED芯片，以预定间隔彼此分开，并与电极电连接; 围绕所述多个LED芯片中的至少一个模制的第一颜色树脂部分; 围绕除了第一着色树脂部分成型的LED芯片之外的所有LED芯片的第二颜色树脂部分模制，并且具有与第一着色树脂部分不同的颜色; 以及第三颜色树脂部分，其包围第一着色树脂部分和第二颜色树脂部分，并且具有与第一着色树脂部分和第二着色树脂部分不同的颜色。

10. 发明申请

US20130092962A1 LIGHT EMITTING DEVICE (LED), MANUFACTURING METHOD THEREOF, AND LED MODULE USING THE SAME 审中-公开
标题翻译：发光装置（LED）及其制造方法及其使用的LED模块
公开(公告)号：US20130092962A1
公开(公告)日：2013-04-18
申请号：US13655100
申请日：2012-10-18
申请人： Ho Sun Paek , Hak Hwan Kim , Ill Heung Choi , Kyung Mi Moon
发明人： Ho Sun Paek , Hak Hwan Kim , Ill Heung Choi , Kyung Mi Moon
IPC分类号： H01L33/08 , H01L33/62
CPC分类号： H01L33/62 , H01L33/44 , H01L2224/16225
摘要： A light emitting device (LED), a manufacturing method thereof, and an LED module using the same. The LED may include a first semiconductor layer, an active layer, and a second semiconductor layer formed sequentially on a light-transmitting substrate, a first electrode formed in a region exposed by removing a part of the first semiconductor layer, a second electrode formed on the second semiconductor layer, a passivation layer formed on the first electrode and the second electrode to expose a region of the first electrode and a region of the second electrode, a first bump formed in a first region including the first electrode exposed through the passivation layer, and extended to another region of the second electrode on which the passivation layer is formed, and a second bump formed in a second region including the second electrode exposed through the passivation layer.
摘要翻译：发光装置（LED）及其制造方法以及使用其的LED模块。 LED可以包括在透光性基板上依次形成的第一半导体层，有源层和第二半导体层，形成在通过去除第一半导体层的一部分而露出的区域中的第一电极，形成在所述第二半导体层，形成在所述第一电极和所述第二电极上以钝化所述第一电极的区域和所述第二电极的区域的钝化层，形成在包括通过所述钝化层暴露的所述第一电极的第一区域中的第一凸起并且延伸到其上形成有钝化层的第二电极的另一区域，以及形成在包括通过钝化层暴露的第二电极的第二区域中的第二凸块。

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